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ATA6621N-PGQW ATA6621N-PGQW Microchip Technology ATA6621N.pdf Description: IC TRANSCEIVER 1/1 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 20-QFN (5x5)
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DSC1121AI2-200.0000T DSC1121AI2-200.0000T Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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JANTXV1N990B-1 JANTXV1N990B-1 Microchip Technology Description: ZENER DIODE
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTXV1N990B-1/TR JANTXV1N990B-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Impedance (Max) (Zzt): 1.7 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
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JAN1N990B-1 JAN1N990B-1 Microchip Technology Description: ZENER DIODE
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTX1N990BUR-1 Microchip Technology Description: ZENER DIODE
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Tolerance: ±5%
Packaging: Bulk
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VXM7-1DW-20-19M2000000 Microchip Technology vxm7.pdf Description: SMT XTAL -10C TO +70C +/-15PPM
Packaging: Tape & Reel (TR)
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JAN1N6772R Microchip Technology Description: DIODE GEN PURP 400V 8A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-257
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
Qualification: MIL-PRF-19500/645
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ATSAMD51P19A-AUT-EFP ATSAMD51P19A-AUT-EFP Microchip Technology SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
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 Мінімальне замовлення: 1000 шт
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ATSAMD51P19A-AUT-EFP ATSAMD51P19A-AUT-EFP Microchip Technology SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
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JANTX1N6643U/TR JANTX1N6643U/TR Microchip Technology Description: DIODE GP 75V 300MA SQ-MELF B
Qualification: MIL-PRF-19500/578
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 100 шт
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1N6621U 1N6621U Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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 Мінімальне замовлення: 100 шт
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1N6621US/TR 1N6621US/TR Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 400V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 100 шт
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1N6621U/TR 1N6621U/TR Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 100 шт
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JAN1N6621US/TR JAN1N6621US/TR Microchip Technology Description: DIODE GEN PURP 75V 200MA D-5A
Qualification: MIL-PRF-19500/116
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 100 шт
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JAN1N6621U/TR JAN1N6621U/TR Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Qualification: MIL-PRF-19500/585
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 100 шт
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JANTX1N6621U/TR JANTX1N6621U/TR Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Voltage - DC Reverse (Vr) (Max): 440 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/585
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
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JANTXV1N6621U/TR JANTXV1N6621U/TR Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/585
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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 Мінімальне замовлення: 100 шт
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JANS1N6621US JANS1N6621US Microchip Technology Description: DIODE GP 400V 1.2A A SQ-MELF
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Qualification: MIL-PRF-19500/585
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
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JANS1N6621US/TR JANS1N6621US/TR Microchip Technology Description: DIODE GP 400V 1.2A A SQ-MELF
Qualification: MIL-PRF-19500/585
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 50 шт
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1N6164US/TR 1N6164US/TR Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
100+1498.17 грн
Мінімальне замовлення: 100 шт
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1N6164US/TR 1N6164US/TR Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+1612.63 грн
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1N6164AUS/TR 1N6164AUS/TR Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: BI-DIRECTIONAL TVS
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 112.8V
Voltage - Breakdown (Min): 77.9V
Bidirectional Channels: 1
Supplier Device Package: C, SQ-MELF
Voltage - Reverse Standoff (Typ): 62.2V
Current - Peak Pulse (10/1000µs): 13.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, C
Packaging: Tape & Reel (TR)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
100+1498.17 грн
Мінімальне замовлення: 100 шт
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1N6164AUS/TR 1N6164AUS/TR Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: BI-DIRECTIONAL TVS
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 112.8V
Voltage - Breakdown (Min): 77.9V
Bidirectional Channels: 1
Supplier Device Package: C, SQ-MELF
Voltage - Reverse Standoff (Typ): 62.2V
Current - Peak Pulse (10/1000µs): 13.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, C
Packaging: Cut Tape (CT)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+1612.63 грн
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DSC1103CL5-200.0000T DSC1103CL5-200.0000T Microchip Technology DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf Description: OSC MEMS LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±10ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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DSC1103CL5-200.0000 DSC1103CL5-200.0000 Microchip Technology Description: OSC MEMS LVDS SMD
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±10ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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VXM7-1D1-16M0000000 Microchip Technology vxm7.pdf Description: SMT XTAL +/-15PPM
Packaging: Tape & Reel (TR)
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JANTXV1N5530BUR-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: MIL-PRF-19500/437
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 Мінімальне замовлення: 100 шт
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2281600-R 2281600-R Microchip Technology 135884-microsemi-adaptec-series-8-product-brief Description: ADAPTEC RAID 81605ZQ SINGLE
Number of Ports: 16
Type: SAS/SATA
Interface: PCI Express
Packaging: Bulk
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1N5531D-1 1N5531D-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
товару немає в наявності
 Мінімальне замовлення: 110 шт
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1N5531D-1/TR 1N5531D-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
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JAN1N5531D-1 JAN1N5531D-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Qualification: MIL-PRF-19500/437
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JANTX1N5531D-1/TR JANTX1N5531D-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Qualification: MIL-PRF-19500/437
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JANTXV1N5531D-1 JANTXV1N5531D-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Qualification: MIL-PRF-19500/437
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JANTX1N5531D-1 JANTX1N5531D-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Qualification: MIL-PRF-19500/437
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
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DSC6331JI1BB-018.4320 Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
Base Resonator: MEMS
Frequency: 18.432 MHz
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Spread Spectrum Bandwidth: ±0.50%, Center Spread
Ratings: AEC-Q100
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-VLGA
Packaging: Tube
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DSC6331JI1BB-018.4320T Microchip Technology DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-VLGA
Packaging: Tape & Reel (TR)
Base Resonator: MEMS
Frequency: 18.432 MHz
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Spread Spectrum Bandwidth: ±0.50%, Center Spread
Ratings: AEC-Q100
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: LVCMOS
Mounting Type: Surface Mount
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DSC6011HI2B-025.0000T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
Base Resonator: MEMS
Frequency: 25 MHz
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 1.3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Tape & Reel (TR)
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DSC1001AI5-001.7000T DSC1001AI5-001.7000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC LOW POWER 1.7MHZ LVCMOS
Base Resonator: MEMS
Frequency: 1.7 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 8mA
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±10ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Strip
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DSC1001AI5-001.7000 DSC1001AI5-001.7000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 1.7000MHZ CMOS SMD
Base Resonator: MEMS
Frequency: 1.7 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 8mA
Ratings: AEC-Q100
Voltage - Supply: 1.7V ~ 3.6V
Frequency Stability: ±10ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Strip
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DSC1001AI5-001.7000 DSC1001AI5-001.7000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC LOW POWER 1.7MHZ LVCMOS
Ratings: AEC-Q100
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Tube
Base Resonator: MEMS
Frequency: 1.7 MHz
Absolute Pull Range (APR): ±10ppm
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 8mA
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MLCE6.5A Microchip Technology 00005264A.pdf Description: TVS DIODE 6.5VWM 11.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE6.5AE3 Microchip Technology 00005264A.pdf Description: TVS DIODE 6.5VWM 11.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE60A Microchip Technology 00005264A.pdf Description: TVS DIODE 60VWM 96.8VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE60Ae3 Microchip Technology 00005264A.pdf Description: TVS DIODE 60VWM 96.8VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE64A Microchip Technology 00005264A.pdf Description: TVS DIODE 64VWM 103VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE64Ae3 Microchip Technology 00005264A.pdf Description: TVS DIODE 64VWM 103VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE7.0A Microchip Technology 00005264A.pdf Description: TVS DIODE 7VWM 12VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE7.5A Microchip Technology 00005264A.pdf Description: TVS DIODE 7.5VWM 12.9VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 100A
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MLCE7.5Ae3 Microchip Technology 00005264A.pdf Description: TVS DIODE 7.5VWM 12.9VC CASE-1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 100A
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
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GC4702-115-2 Microchip Technology Description: SI LIMITER HERMETIC MICROSTRIP
Packaging: Tray
Package / Case: Module
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.3pF @ 6V, 1MHz
Resistance @ If, F: 1.2Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 20V
Power Dissipation (Max): 3 W
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GC4702-149 Microchip Technology Description: SI LIMITER HERMETIC SMT
Packaging: Bag
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.3pF @ 6V, 1MHz
Resistance @ If, F: 1.2Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 20V
Power Dissipation (Max): 3 W
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1N4109-1 1N4109-1 Microchip Technology 1N4614-1-1N4627-1e3_1N4099-1-1N4135-1e3.pdf Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
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1N4109-1/TR 1N4109-1/TR Microchip Technology 129734-lds-0245-2-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
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JAN1N4109-1/TR JAN1N4109-1/TR Microchip Technology 129734-lds-0245-2-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Qualification: MIL-PRF-19500/435
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MXSMLJ14CAe3 MXSMLJ14CAe3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 129.4A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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CDLL965BE3 CDLL965BE3 Microchip Technology 1N957BUR-1-1N992BUR-1.pdf Description: DIODE ZENER 15V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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CDLL965BE3/TR CDLL965BE3/TR Microchip Technology 5917-1n962bur-pdf.pdf Description: DIODE ZENER 15V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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MIC502BN MIC502BN Microchip Technology mic502.pdf Description: IC MOTOR DRIVER 4V-13.2V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Controller - Speed
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Low Side
Voltage - Supply: 4V ~ 13.2V
Applications: Fan Controller
Technology: Bipolar
Supplier Device Package: 8-PDIP
Motor Type - AC, DC: Brushless DC (BLDC)
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MP6KE36A MP6KE36A Microchip Technology rf01007_rb.pdf Description: TVS DIODE 30.8VWM 49.9VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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ATA6621N-PGQW ATA6621N.pdf
ATA6621N-PGQW
Виробник: Microchip Technology
Description: IC TRANSCEIVER 1/1 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 20-QFN (5x5)
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DSC1121AI2-200.0000T DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AI2-200.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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JANTXV1N990B-1
JANTXV1N990B-1
Виробник: Microchip Technology
Description: ZENER DIODE
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTXV1N990B-1/TR
JANTXV1N990B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Impedance (Max) (Zzt): 1.7 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
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JAN1N990B-1
JAN1N990B-1
Виробник: Microchip Technology
Description: ZENER DIODE
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTX1N990BUR-1
Виробник: Microchip Technology
Description: ZENER DIODE
Qualification: MIL-PRF-19500/117
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Tolerance: ±5%
Packaging: Bulk
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VXM7-1DW-20-19M2000000 vxm7.pdf
Виробник: Microchip Technology
Description: SMT XTAL -10C TO +70C +/-15PPM
Packaging: Tape & Reel (TR)
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JAN1N6772R
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 8A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-257
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
Qualification: MIL-PRF-19500/645
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ATSAMD51P19A-AUT-EFP SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf
ATSAMD51P19A-AUT-EFP
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
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ATSAMD51P19A-AUT-EFP SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf
ATSAMD51P19A-AUT-EFP
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
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JANTX1N6643U/TR
JANTX1N6643U/TR
Виробник: Microchip Technology
Description: DIODE GP 75V 300MA SQ-MELF B
Qualification: MIL-PRF-19500/578
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 100 шт
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1N6621U
1N6621U
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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1N6621US/TR 11068-sd52a-datasheet
1N6621US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 100 шт
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1N6621U/TR
1N6621U/TR
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N6621US/TR
JAN1N6621US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA D-5A
Qualification: MIL-PRF-19500/116
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 100 шт
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JAN1N6621U/TR
JAN1N6621U/TR
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Qualification: MIL-PRF-19500/585
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANTX1N6621U/TR
JANTX1N6621U/TR
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Voltage - DC Reverse (Vr) (Max): 440 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/585
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANTXV1N6621U/TR
JANTXV1N6621U/TR
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/585
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
товару немає в наявності
Мінімальне замовлення: 100 шт
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JANS1N6621US
JANS1N6621US
Виробник: Microchip Technology
Description: DIODE GP 400V 1.2A A SQ-MELF
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Qualification: MIL-PRF-19500/585
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
товару немає в наявності
Мінімальне замовлення: 50 шт
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JANS1N6621US/TR
JANS1N6621US/TR
Виробник: Microchip Technology
Description: DIODE GP 400V 1.2A A SQ-MELF
Qualification: MIL-PRF-19500/585
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A, SQ-MELF
Current - Average Rectified (Io): 1.2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 50 шт
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1N6164US/TR 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6164US/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
100+1498.17 грн
Мінімальне замовлення: 100 шт
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1N6164US/TR 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6164US/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1612.63 грн
В кошику  од. на суму  грн.
1N6164AUS/TR 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6164AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 112.8V
Voltage - Breakdown (Min): 77.9V
Bidirectional Channels: 1
Supplier Device Package: C, SQ-MELF
Voltage - Reverse Standoff (Typ): 62.2V
Current - Peak Pulse (10/1000µs): 13.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, C
Packaging: Tape & Reel (TR)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
100+1498.17 грн
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
1N6164AUS/TR 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6164AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 112.8V
Voltage - Breakdown (Min): 77.9V
Bidirectional Channels: 1
Supplier Device Package: C, SQ-MELF
Voltage - Reverse Standoff (Typ): 62.2V
Current - Peak Pulse (10/1000µs): 13.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, C
Packaging: Cut Tape (CT)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1612.63 грн
В кошику  од. на суму  грн.
DSC1103CL5-200.0000T DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf
DSC1103CL5-200.0000T
Виробник: Microchip Technology
Description: OSC MEMS LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±10ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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DSC1103CL5-200.0000
DSC1103CL5-200.0000
Виробник: Microchip Technology
Description: OSC MEMS LVDS SMD
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±10ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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VXM7-1D1-16M0000000 vxm7.pdf
Виробник: Microchip Technology
Description: SMT XTAL +/-15PPM
Packaging: Tape & Reel (TR)
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JANTXV1N5530BUR-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: MIL-PRF-19500/437
товару немає в наявності
Мінімальне замовлення: 100 шт
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2281600-R 135884-microsemi-adaptec-series-8-product-brief
2281600-R
Виробник: Microchip Technology
Description: ADAPTEC RAID 81605ZQ SINGLE
Number of Ports: 16
Type: SAS/SATA
Interface: PCI Express
Packaging: Bulk
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1N5531D-1
1N5531D-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
товару немає в наявності
Мінімальне замовлення: 110 шт
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1N5531D-1/TR
1N5531D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
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Мінімальне замовлення: 108 шт
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JAN1N5531D-1 123956-lds-0037-1-datasheet
JAN1N5531D-1
Виробник: Microchip Technology
Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Qualification: MIL-PRF-19500/437
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Мінімальне замовлення: 100 шт
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JANTX1N5531D-1/TR
JANTX1N5531D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Qualification: MIL-PRF-19500/437
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Мінімальне замовлення: 100 шт
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JANTXV1N5531D-1 123956-lds-0037-1-datasheet
JANTXV1N5531D-1
Виробник: Microchip Technology
Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Qualification: MIL-PRF-19500/437
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JANTX1N5531D-1 123956-lds-0037-1-datasheet
JANTX1N5531D-1
Виробник: Microchip Technology
Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Qualification: MIL-PRF-19500/437
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
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DSC6331JI1BB-018.4320 DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Base Resonator: MEMS
Frequency: 18.432 MHz
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Spread Spectrum Bandwidth: ±0.50%, Center Spread
Ratings: AEC-Q100
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-VLGA
Packaging: Tube
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DSC6331JI1BB-018.4320T DSC63xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-with-Spread-Spectrum-DS20006154A.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-VLGA
Packaging: Tape & Reel (TR)
Base Resonator: MEMS
Frequency: 18.432 MHz
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 3mA (Typ)
Spread Spectrum Bandwidth: ±0.50%, Center Spread
Ratings: AEC-Q100
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: LVCMOS
Mounting Type: Surface Mount
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DSC6011HI2B-025.0000T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Base Resonator: MEMS
Frequency: 25 MHz
Height - Seated (Max): 0.035" (0.89mm)
Current - Supply (Max): 1.3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: 4-VFLGA
Packaging: Tape & Reel (TR)
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DSC1001AI5-001.7000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AI5-001.7000T
Виробник: Microchip Technology
Description: MEMS OSC LOW POWER 1.7MHZ LVCMOS
Base Resonator: MEMS
Frequency: 1.7 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 8mA
Voltage - Supply: 1.8V ~ 3.3V
Frequency Stability: ±10ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Strip
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DSC1001AI5-001.7000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AI5-001.7000
Виробник: Microchip Technology
Description: MEMS OSC XO 1.7000MHZ CMOS SMD
Base Resonator: MEMS
Frequency: 1.7 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 8mA
Ratings: AEC-Q100
Voltage - Supply: 1.7V ~ 3.6V
Frequency Stability: ±10ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Strip
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DSC1001AI5-001.7000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AI5-001.7000
Виробник: Microchip Technology
Description: MEMS OSC LOW POWER 1.7MHZ LVCMOS
Ratings: AEC-Q100
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Tube
Base Resonator: MEMS
Frequency: 1.7 MHz
Absolute Pull Range (APR): ±10ppm
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 8mA
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MLCE6.5A 00005264A.pdf
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE6.5AE3 00005264A.pdf
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE60A 00005264A.pdf
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE60Ae3 00005264A.pdf
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 219 шт
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MLCE64A 00005264A.pdf
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 219 шт
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MLCE64Ae3 00005264A.pdf
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 219 шт
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MLCE7.0A 00005264A.pdf
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 100A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 219 шт
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MLCE7.5A 00005264A.pdf
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 100A
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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Мінімальне замовлення: 219 шт
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MLCE7.5Ae3 00005264A.pdf
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC CASE-1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 100A
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Unidirectional Channels: 1
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Мінімальне замовлення: 219 шт
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GC4702-115-2
Виробник: Microchip Technology
Description: SI LIMITER HERMETIC MICROSTRIP
Packaging: Tray
Package / Case: Module
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.3pF @ 6V, 1MHz
Resistance @ If, F: 1.2Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 20V
Power Dissipation (Max): 3 W
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GC4702-149
Виробник: Microchip Technology
Description: SI LIMITER HERMETIC SMT
Packaging: Bag
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 0.3pF @ 6V, 1MHz
Resistance @ If, F: 1.2Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 20V
Power Dissipation (Max): 3 W
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1N4109-1 1N4614-1-1N4627-1e3_1N4099-1-1N4135-1e3.pdf
1N4109-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
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Мінімальне замовлення: 385 шт
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1N4109-1/TR 129734-lds-0245-2-datasheet
1N4109-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
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Мінімальне замовлення: 358 шт
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JAN1N4109-1/TR 129734-lds-0245-2-datasheet
JAN1N4109-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Qualification: MIL-PRF-19500/435
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Мінімальне замовлення: 183 шт
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MXSMLJ14CAe3 10563-msml-datasheet
MXSMLJ14CAe3
Виробник: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 129.4A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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CDLL965BE3 1N957BUR-1-1N992BUR-1.pdf
CDLL965BE3
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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CDLL965BE3/TR 5917-1n962bur-pdf.pdf
CDLL965BE3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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MIC502BN mic502.pdf
MIC502BN
Виробник: Microchip Technology
Description: IC MOTOR DRIVER 4V-13.2V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Controller - Speed
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Low Side
Voltage - Supply: 4V ~ 13.2V
Applications: Fan Controller
Technology: Bipolar
Supplier Device Package: 8-PDIP
Motor Type - AC, DC: Brushless DC (BLDC)
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MP6KE36A rf01007_rb.pdf
MP6KE36A
Виробник: Microchip Technology
Description: TVS DIODE 30.8VWM 49.9VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
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