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1N6628US/TR 1N6628US/TR Microchip Technology 11069-sd53a-datasheet Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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1N6628U/TR 1N6628U/TR Microchip Technology Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
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JAN1N6628US/TR JAN1N6628US/TR Microchip Technology Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JAN1N6628U/TR JAN1N6628U/TR Microchip Technology Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTX1N6628US JANTX1N6628US Microchip Technology 11069-sd53a-datasheet Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTX1N6628U JANTX1N6628U Microchip Technology Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
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JANTX1N6628U/TR JANTX1N6628U/TR Microchip Technology Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
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JANTXV1N6628US/TR JANTXV1N6628US/TR Microchip Technology Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTXV1N6628U/TR JANTXV1N6628U/TR Microchip Technology Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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MIC5200-5.0BM-TR MIC5200-5.0BM-TR Microchip Technology MIC5200-100mA-Low-Dropout-Regulator-DS20005578B.pdf Description: IC REG LINEAR 5V 100MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 1.5 mA
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1N3823AUR-1/TR 1N3823AUR-1/TR Microchip Technology 1N3821AUR-1-1N3828AUR-1.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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1N3823AUR-1/TR 1N3823AUR-1/TR Microchip Technology 1N3821AUR-1-1N3828AUR-1.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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VCC1-G3D-100M000000 Microchip Technology VCC1-April-2020.pdf Description: CMOS XO +2.5 VDC 15PF -40C TO +8
Packaging: Tape & Reel (TR)
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SAFETY-PKG-G3-F Microchip Technology Description: SOFTWARE SAFETY DATA PKG G3
Packaging: Bulk
Type: License
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APT7F120S APT7F120S Microchip Technology 7262-apt7f120b-apt7f120s-datasheet Description: MOSFET N-CH 1200V 7A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 3A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+521.26 грн
100+433.06 грн
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ATV2500BQ-25PC ATV2500BQ-25PC Microchip Technology doc0249.pdf Description: IC CPLD 24MC 25NS 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Programmable Type: OTP
Number of Macrocells: 24
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 25 ns
Supplier Device Package: 40-PDIP
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 24
DigiKey Programmable: Not Verified
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ATV2500BL-20JI ATV2500BL-20JI Microchip Technology doc0249.pdf Description: IC CPLD 24MC 20NS 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Programmable Type: OTP
Number of Macrocells: 24
Operating Temperature: -40°C ~ 85°C (TA)
Delay Time tpd(1) Max: 20 ns
Supplier Device Package: 44-PLCC (16.6x16.6)
Voltage Supply - Internal: 4.5V ~ 5.5V
Number of I/O: 24
DigiKey Programmable: Not Verified
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ATSAM3S1CB-AU ATSAM3S1CB-AU Microchip Technology atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
2+315.94 грн
25+275.67 грн
100+250.02 грн
Мінімальне замовлення: 2
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ATSAM3S1BB-AU ATSAM3S1BB-AU Microchip Technology atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 564 шт:
термін постачання 21-31 дні (днів)
2+268.98 грн
25+237.84 грн
100+214.93 грн
Мінімальне замовлення: 2
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ATSAM3S1AB-MUR ATSAM3S1AB-MUR Microchip Technology atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf Description: IC MCU 32BIT 64KB FLASH 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
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ATSAM3S1BB-MUR ATSAM3S1BB-MUR Microchip Technology atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf Description: IC MCU 32BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 47
DigiKey Programmable: Not Verified
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ATSAM3S1BB-MUR ATSAM3S1BB-MUR Microchip Technology atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf Description: IC MCU 32BIT 64KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 47
DigiKey Programmable: Not Verified
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ATSAM3S1CB-CUR ATSAM3S1CB-CUR Microchip Technology atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf Description: IC MCU 32BIT 64KB FLASH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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ATSAM3S1CB-CUR ATSAM3S1CB-CUR Microchip Technology atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf Description: IC MCU 32BIT 64KB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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ATSAM3S2CA-CU ATSAM3S2CA-CU Microchip Technology SAM3S_Series.pdf Description: IC MCU 32BIT 128KB FLSH 100TFBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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ATSAM3S4CA-CU ATSAM3S4CA-CU Microchip Technology SAM3S_Series.pdf Description: IC MCU 32BIT 256KB FLSH 100TFBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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ATSAM3SD8BA-AUR ATSAM3SD8BA-AUR Microchip Technology Atmel-11075-Atmel-SMART-SAM3S_Flyer.pdf Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 47
DigiKey Programmable: Not Verified
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2N5237S 2N5237S Microchip Technology Description: TRANS NPN 120V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
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JANTXV2N5237S JANTXV2N5237S Microchip Technology 8815-lds-0014-pdf Description: TRANS NPN 120V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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JANS2N5237S JANS2N5237S Microchip Technology Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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AT88SC0204C-PU AT88SC0204C-PU Microchip Technology Atmel-2022S-CryptoMem-AT88SC0204C-Datasheet-Summary.pdf Description: IC SECURE MEMORY 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Secure Memory
Applications: Embedded, Smart Card
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
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ATA6621N-PGQW ATA6621N-PGQW Microchip Technology ATA6621N.pdf Description: IC TRANSCEIVER 1/1 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 20-QFN (5x5)
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DSC1121AI2-200.0000T DSC1121AI2-200.0000T Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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JANTXV1N990B-1 JANTXV1N990B-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
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JANTXV1N990B-1/TR JANTXV1N990B-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1.7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
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JAN1N990B-1 JAN1N990B-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
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JANTX1N990BUR-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
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VXM7-1DW-20-19M2000000 Microchip Technology vxm7.pdf Description: SMT XTAL -10C TO +70C +/-15PPM
Packaging: Tape & Reel (TR)
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JAN1N6772R Microchip Technology Description: DIODE GEN PURP 400V 8A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-257
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
Qualification: MIL-PRF-19500/645
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ATSAMD51P19A-AUT-EFP ATSAMD51P19A-AUT-EFP Microchip Technology SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
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ATSAMD51P19A-AUT-EFP ATSAMD51P19A-AUT-EFP Microchip Technology SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
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JANTX1N6643U/TR JANTX1N6643U/TR Microchip Technology Description: DIODE GP 75V 300MA SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Qualification: MIL-PRF-19500/578
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1N6621U 1N6621U Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
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1N6621US/TR 1N6621US/TR Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 400V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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1N6621U/TR 1N6621U/TR Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
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JAN1N6621US/TR JAN1N6621US/TR Microchip Technology Description: DIODE GEN PURP 75V 200MA D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
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JAN1N6621U/TR JAN1N6621U/TR Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
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JANTX1N6621U/TR JANTX1N6621U/TR Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
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JANTXV1N6621U/TR JANTXV1N6621U/TR Microchip Technology Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
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JANS1N6621US JANS1N6621US Microchip Technology Description: DIODE GP 400V 1.2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Qualification: MIL-PRF-19500/585
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JANS1N6621US/TR JANS1N6621US/TR Microchip Technology Description: DIODE GP 400V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Qualification: MIL-PRF-19500/585
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1N6164US/TR 1N6164US/TR Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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термін постачання 21-31 дні (днів)
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Мінімальне замовлення: 100
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1N6164US/TR 1N6164US/TR Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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термін постачання 21-31 дні (днів)
1+1640.96 грн
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1N6164AUS/TR 1N6164AUS/TR Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
100+1524.49 грн
Мінімальне замовлення: 100
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1N6164AUS/TR 1N6164AUS/TR Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+1640.96 грн
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DSC1103CL5-200.0000T DSC1103CL5-200.0000T Microchip Technology DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf Description: OSC MEMS LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±10ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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DSC1103CL5-200.0000 DSC1103CL5-200.0000 Microchip Technology Description: OSC MEMS LVDS SMD
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±10ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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VXM7-1D1-16M0000000 Microchip Technology vxm7.pdf Description: SMT XTAL +/-15PPM
Packaging: Tape & Reel (TR)
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JANTXV1N5530BUR-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: MIL-PRF-19500/437
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2281600-R 2281600-R Microchip Technology 135884-microsemi-adaptec-series-8-product-brief Description: ADAPTEC RAID 81605ZQ SINGLE
Packaging: Bulk
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 16
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1N6628US/TR 11069-sd53a-datasheet
1N6628US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 2.3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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1N6628U/TR
1N6628U/TR
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
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JAN1N6628US/TR
JAN1N6628US/TR
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A E-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JAN1N6628U/TR
JAN1N6628U/TR
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTX1N6628US 11069-sd53a-datasheet
JANTX1N6628US
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTX1N6628U
JANTX1N6628U
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
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JANTX1N6628U/TR
JANTX1N6628U/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
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JANTXV1N6628US/TR
JANTXV1N6628US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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JANTXV1N6628U/TR
JANTXV1N6628U/TR
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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MIC5200-5.0BM-TR MIC5200-100mA-Low-Dropout-Regulator-DS20005578B.pdf
MIC5200-5.0BM-TR
Виробник: Microchip Technology
Description: IC REG LINEAR 5V 100MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 1.5 mA
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1N3823AUR-1/TR 1N3821AUR-1-1N3828AUR-1.pdf
1N3823AUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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1N3823AUR-1/TR 1N3821AUR-1-1N3828AUR-1.pdf
1N3823AUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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VCC1-G3D-100M000000 VCC1-April-2020.pdf
Виробник: Microchip Technology
Description: CMOS XO +2.5 VDC 15PF -40C TO +8
Packaging: Tape & Reel (TR)
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SAFETY-PKG-G3-F
Виробник: Microchip Technology
Description: SOFTWARE SAFETY DATA PKG G3
Packaging: Bulk
Type: License
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APT7F120S 7262-apt7f120b-apt7f120s-datasheet
APT7F120S
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 7A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 3A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+521.26 грн
100+433.06 грн
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ATV2500BQ-25PC doc0249.pdf
ATV2500BQ-25PC
Виробник: Microchip Technology
Description: IC CPLD 24MC 25NS 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Programmable Type: OTP
Number of Macrocells: 24
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 25 ns
Supplier Device Package: 40-PDIP
Voltage Supply - Internal: 4.75V ~ 5.25V
Number of I/O: 24
DigiKey Programmable: Not Verified
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ATV2500BL-20JI doc0249.pdf
ATV2500BL-20JI
Виробник: Microchip Technology
Description: IC CPLD 24MC 20NS 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Programmable Type: OTP
Number of Macrocells: 24
Operating Temperature: -40°C ~ 85°C (TA)
Delay Time tpd(1) Max: 20 ns
Supplier Device Package: 44-PLCC (16.6x16.6)
Voltage Supply - Internal: 4.5V ~ 5.5V
Number of I/O: 24
DigiKey Programmable: Not Verified
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ATSAM3S1CB-AU atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf
ATSAM3S1CB-AU
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+315.94 грн
25+275.67 грн
100+250.02 грн
Мінімальне замовлення: 2
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ATSAM3S1BB-AU atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf
ATSAM3S1BB-AU
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 564 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+268.98 грн
25+237.84 грн
100+214.93 грн
Мінімальне замовлення: 2
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ATSAM3S1AB-MUR atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf
ATSAM3S1AB-MUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
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ATSAM3S1BB-MUR atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf
ATSAM3S1BB-MUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 47
DigiKey Programmable: Not Verified
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ATSAM3S1BB-MUR atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf
ATSAM3S1BB-MUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, MMC, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 47
DigiKey Programmable: Not Verified
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ATSAM3S1CB-CUR atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf
ATSAM3S1CB-CUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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ATSAM3S1CB-CUR atmel_6500s-32-bit%20cortex-m3%20microcontroller_sam3s_summary-datasheet.pdf
ATSAM3S1CB-CUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 64KB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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ATSAM3S2CA-CU SAM3S_Series.pdf
ATSAM3S2CA-CU
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLSH 100TFBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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ATSAM3S4CA-CU SAM3S_Series.pdf
ATSAM3S4CA-CU
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLSH 100TFBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 15x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (9x9)
Number of I/O: 79
DigiKey Programmable: Not Verified
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ATSAM3SD8BA-AUR Atmel-11075-Atmel-SMART-SAM3S_Flyer.pdf
ATSAM3SD8BA-AUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x10/12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 47
DigiKey Programmable: Not Verified
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2N5237S
2N5237S
Виробник: Microchip Technology
Description: TRANS NPN 120V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
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JANTXV2N5237S 8815-lds-0014-pdf
JANTXV2N5237S
Виробник: Microchip Technology
Description: TRANS NPN 120V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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JANS2N5237S
JANS2N5237S
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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AT88SC0204C-PU Atmel-2022S-CryptoMem-AT88SC0204C-Datasheet-Summary.pdf
AT88SC0204C-PU
Виробник: Microchip Technology
Description: IC SECURE MEMORY 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Secure Memory
Applications: Embedded, Smart Card
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
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ATA6621N-PGQW ATA6621N.pdf
ATA6621N-PGQW
Виробник: Microchip Technology
Description: IC TRANSCEIVER 1/1 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: 20-QFN (5x5)
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DSC1121AI2-200.0000T DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AI2-200.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 200.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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JANTXV1N990B-1
JANTXV1N990B-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
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JANTXV1N990B-1/TR
JANTXV1N990B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1.7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
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JAN1N990B-1
JAN1N990B-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
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JANTX1N990BUR-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Qualification: MIL-PRF-19500/117
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VXM7-1DW-20-19M2000000 vxm7.pdf
Виробник: Microchip Technology
Description: SMT XTAL -10C TO +70C +/-15PPM
Packaging: Tape & Reel (TR)
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JAN1N6772R
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 8A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-257
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
Qualification: MIL-PRF-19500/645
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ATSAMD51P19A-AUT-EFP SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf
ATSAMD51P19A-AUT-EFP
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
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ATSAMD51P19A-AUT-EFP SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf
ATSAMD51P19A-AUT-EFP
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 128TQFP
Packaging: Cut Tape (CT)
Package / Case: 128-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 128-TQFP (14x14)
Number of I/O: 99
DigiKey Programmable: Not Verified
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JANTX1N6643U/TR
JANTX1N6643U/TR
Виробник: Microchip Technology
Description: DIODE GP 75V 300MA SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Qualification: MIL-PRF-19500/578
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1N6621U
1N6621U
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
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1N6621US/TR 11068-sd52a-datasheet
1N6621US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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1N6621U/TR
1N6621U/TR
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
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JAN1N6621US/TR
JAN1N6621US/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
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JAN1N6621U/TR
JAN1N6621U/TR
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
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JANTX1N6621U/TR
JANTX1N6621U/TR
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
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JANTXV1N6621U/TR
JANTXV1N6621U/TR
Виробник: Microchip Technology
Description: DIODE GP 440V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
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JANS1N6621US
JANS1N6621US
Виробник: Microchip Technology
Description: DIODE GP 400V 1.2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Qualification: MIL-PRF-19500/585
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JANS1N6621US/TR
JANS1N6621US/TR
Виробник: Microchip Technology
Description: DIODE GP 400V 1.2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Qualification: MIL-PRF-19500/585
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1N6164US/TR 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6164US/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+1524.49 грн
Мінімальне замовлення: 100
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1N6164US/TR 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6164US/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1640.96 грн
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1N6164AUS/TR 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6164AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+1524.49 грн
Мінімальне замовлення: 100
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1N6164AUS/TR 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6164AUS/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 112.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1640.96 грн
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DSC1103CL5-200.0000T DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf
DSC1103CL5-200.0000T
Виробник: Microchip Technology
Description: OSC MEMS LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±10ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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DSC1103CL5-200.0000
DSC1103CL5-200.0000
Виробник: Microchip Technology
Description: OSC MEMS LVDS SMD
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±10ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 200 MHz
Base Resonator: MEMS
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VXM7-1D1-16M0000000 vxm7.pdf
Виробник: Microchip Technology
Description: SMT XTAL +/-15PPM
Packaging: Tape & Reel (TR)
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JANTXV1N5530BUR-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: MIL-PRF-19500/437
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2281600-R 135884-microsemi-adaptec-series-8-product-brief
2281600-R
Виробник: Microchip Technology
Description: ADAPTEC RAID 81605ZQ SINGLE
Packaging: Bulk
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 16
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