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2N1131 2N1131 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
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1N5247/TR 1N5247/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.4 V
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1N5247CE3 1N5247CE3 Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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1N5247CE3/TR 1N5247CE3/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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1011GN-125EL Microchip Technology 1011GN-125E,EL,EP.pdf Description: RF MOSFET HEMT 50V 55-QQP
Packaging: Bulk
Package / Case: 55-QQP
Mounting Type: Surface Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 150W
Gain: 18.75dB
Technology: HEMT
Supplier Device Package: 55-QQP
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 60 mA
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1011GN-30EP Microchip Technology 136814-1011gn-30e-1011gn-el-1011gn-ep-datasheet Description: RF MOSFET GAN 50V
Packaging: Bulk
Package / Case: Module
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 35W
Gain: 18.5dB
Technology: GaN
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 40 mA
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1011GN-125E Microchip Technology 1011GN-125E,EL,EP.pdf Description: RF MOSFET HEMT 50V 55-QQ
Packaging: Bulk
Package / Case: 55-QQ
Mounting Type: Surface Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 150W
Gain: 18.75dB
Technology: HEMT
Supplier Device Package: 55-QQ
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 60 mA
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1011GN-30EL Microchip Technology 136814-1011gn-30e-1011gn-el-1011gn-ep-datasheet Description: RF MOSFET GAN 50V 55-QQP
Packaging: Bulk
Package / Case: 55-QQP
Mounting Type: Surface Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 35W
Gain: 18.5dB
Technology: GaN
Supplier Device Package: 55-QQP
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 40 mA
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1011GN-125EP Microchip Technology 1011GN-125E,EL,EP.pdf Description: RF MOSFET HEMT 50V
Packaging: Bulk
Package / Case: Module
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 150W
Gain: 18.75dB
Technology: HEMT
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 60 mA
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1011GN-2200VP Microchip Technology 1011GN-2200VP_datasheet_%28R1%29.pdf Description: RF MOSFET HEMT 50V
Packaging: Bulk
Package / Case: Module
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 2200W
Gain: 19.4dB
Technology: HEMT
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 300 mA
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1011GN-250V Microchip Technology 1011GN-250V_R2.0.pdf Description: RF MOSFET GAN 50V 55-QP
Packaging: Bulk
Package / Case: 55-QP
Mounting Type: Surface Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 280W
Gain: 20.5dB
Technology: GaN
Supplier Device Package: 55-QP
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 60 mA
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ATSAME54N20A-AFT-SL3 ATSAME54N20A-AFT-SL3 Microchip Technology SAM-D5x-E5x-Family-Data-Sheet-DS60001507.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 28x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 81
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+732.88 грн
Мінімальне замовлення: 1000
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1N5921BUR-1/TR 1N5921BUR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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1N5921BUR-1/TR 1N5921BUR-1/TR Microchip Technology 1N5913BUR-1-1N5956BUR-1.pdf Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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1N5921B 1N5921B Microchip Technology 10922-sa5-57-datasheet Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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1N5921B/TR 1N5921B/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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AT24C21-10SC-2.5 AT24C21-10SC-2.5 Microchip Technology AT24C21_Rev00.pdf Description: IC EEPROM 1KBIT I2C 100KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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EV12V58A Microchip Technology MCP3004-User-Guide-DS50003604.pdf Description: MCP3004 4CH 10BIT SAR ADC EVB
Packaging: Box
Function: Analog to Digital Converter (ADC)
Type: Data Acquisition
Contents: Board(s)
Utilized IC / Part: MCP3004
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+2396.18 грн
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JAN1N6628US JAN1N6628US Microchip Technology Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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AT89LP6440-20MU AT89LP6440-20MU Microchip Technology doc3706.pdf Description: IC MCU 8BIT 64KB FLASH 44VQFN
Packaging: Tray
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: 8051
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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VXA4-1D1-25M0000000 Microchip Technology 1243749-vxa4 Description: VXA4-1D1-25M0000000
Packaging: Bag
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PIC18F24K42T-E/SSVAO PIC18F24K42T-E/SSVAO Microchip Technology Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 25
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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JANTXV1N5527B-1 JANTXV1N5527B-1 Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.8 V
Qualification: MIL-PRF-19500/437
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JANTXV1N5527B-1/TR JANTXV1N5527B-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.8 V
Qualification: MIL-PRF-19500/437
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DSC1124DI1-027.0000T DSC1124DI1-027.0000T Microchip Technology DSC1104-24-Low-Jitter-Precision-HCSL-Oscillator-DS20005870B.pdf Description: MEMS OSC XO 27.0000MHZ HCSL SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 42mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 27 MHz
Base Resonator: MEMS
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JANTXV1N6627U JANTXV1N6627U Microchip Technology Description: DIODE GEN PURP 400V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: MIL-PRF-19500/590
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DSC1001CL2-133.0000T DSC1001CL2-133.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC., LOW POWER, 133MHZ, LV
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 133 MHz
Base Resonator: MEMS
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1N6336US 1N6336US Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
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JAN1N6336US/TR JAN1N6336US/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANTX1N6336US JANTX1N6336US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 33V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANTX1N6336US/TR JANTX1N6336US/TR Microchip Technology 11083-lds-0193-1-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANTXV1N6336US/TR JANTXV1N6336US/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANS1N6336US/TR JANS1N6336US/TR Microchip Technology 11083-lds-0193-1-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANS1N6336US JANS1N6336US Microchip Technology Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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PIC32MZ1024EFE100T-E/GJX PIC32MZ1024EFE100T-E/GJX Microchip Technology PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PIC32MZ1024EFE100T-E/GJX PIC32MZ1024EFE100T-E/GJX Microchip Technology PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PIC32CK1025SG01064-I/3ZB-SL3 PIC32CK1025SG01064-I/3ZB-SL3 Microchip Technology PIC32CK-SG01-SG00-GC01-GC00-Family-Data-Sheet-DS60001795.pdf Description: M33 HSM 1MB/256 64 TQFP
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SDHC, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, I2S, LVD, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 50
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
1+337.42 грн
25+295.16 грн
100+268.14 грн
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UPT12Re3/TR7 UPT12Re3/TR7 Microchip Technology 129557-upt-and-uptb-tvs-family-datasheet Description: TVS UPT 12V POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 150W
Power Line Protection: No
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1N3312RA 1N3312RA Microchip Technology 10905-sa5-21-datasheet Description: DIODE ZENER 13V 50W DO5
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1.1 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
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1N3312RB 1N3312RB Microchip Technology 10905-sa5-21-datasheet Description: DIODE ZENER 13V 50W DO5
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1.1 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
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JANTX1N757CUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7 V
Qualification: MIL-PRF-19500/127
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MLCE80A Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE80Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJLCE80A MASMCJLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJLCE80Ae3 MASMCJLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCGLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCGLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MALCE80A Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MALCE80Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLCE80A Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLCE80Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLLCE80A Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLLCE80Ae3 Microchip Technology 9498-mlce-pdf Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCGLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCGLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCGLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCGLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCJLCE80A MXSMCJLCE80A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCJLCE80Ae3 MXSMCJLCE80Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N6628U 1N6628U Microchip Technology 1N6626US%2C1N6631US.pdf Description: DIODE GP 660V 1.75A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
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2N1131
2N1131
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
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1N5247/TR
1N5247/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.4 V
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1N5247CE3
1N5247CE3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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1N5247CE3/TR
1N5247CE3/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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1011GN-125EL 1011GN-125E,EL,EP.pdf
Виробник: Microchip Technology
Description: RF MOSFET HEMT 50V 55-QQP
Packaging: Bulk
Package / Case: 55-QQP
Mounting Type: Surface Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 150W
Gain: 18.75dB
Technology: HEMT
Supplier Device Package: 55-QQP
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 60 mA
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1011GN-30EP 136814-1011gn-30e-1011gn-el-1011gn-ep-datasheet
Виробник: Microchip Technology
Description: RF MOSFET GAN 50V
Packaging: Bulk
Package / Case: Module
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 35W
Gain: 18.5dB
Technology: GaN
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 40 mA
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1011GN-125E 1011GN-125E,EL,EP.pdf
Виробник: Microchip Technology
Description: RF MOSFET HEMT 50V 55-QQ
Packaging: Bulk
Package / Case: 55-QQ
Mounting Type: Surface Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 150W
Gain: 18.75dB
Technology: HEMT
Supplier Device Package: 55-QQ
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 60 mA
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1011GN-30EL 136814-1011gn-30e-1011gn-el-1011gn-ep-datasheet
Виробник: Microchip Technology
Description: RF MOSFET GAN 50V 55-QQP
Packaging: Bulk
Package / Case: 55-QQP
Mounting Type: Surface Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 35W
Gain: 18.5dB
Technology: GaN
Supplier Device Package: 55-QQP
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 40 mA
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1011GN-125EP 1011GN-125E,EL,EP.pdf
Виробник: Microchip Technology
Description: RF MOSFET HEMT 50V
Packaging: Bulk
Package / Case: Module
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 150W
Gain: 18.75dB
Technology: HEMT
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 60 mA
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1011GN-2200VP 1011GN-2200VP_datasheet_%28R1%29.pdf
Виробник: Microchip Technology
Description: RF MOSFET HEMT 50V
Packaging: Bulk
Package / Case: Module
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 2200W
Gain: 19.4dB
Technology: HEMT
Voltage - Rated: 150 V
Voltage - Test: 50 V
Current - Test: 300 mA
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1011GN-250V 1011GN-250V_R2.0.pdf
Виробник: Microchip Technology
Description: RF MOSFET GAN 50V 55-QP
Packaging: Bulk
Package / Case: 55-QP
Mounting Type: Surface Mount
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 280W
Gain: 20.5dB
Technology: GaN
Supplier Device Package: 55-QP
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 60 mA
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ATSAME54N20A-AFT-SL3 SAM-D5x-E5x-Family-Data-Sheet-DS60001507.pdf
ATSAME54N20A-AFT-SL3
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 28x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 81
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+732.88 грн
Мінімальне замовлення: 1000
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1N5921BUR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5921BUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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1N5921BUR-1/TR 1N5913BUR-1-1N5956BUR-1.pdf
1N5921BUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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1N5921B 10922-sa5-57-datasheet
1N5921B
Виробник: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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1N5921B/TR
1N5921B/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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AT24C21-10SC-2.5 AT24C21_Rev00.pdf
AT24C21-10SC-2.5
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 100KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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EV12V58A MCP3004-User-Guide-DS50003604.pdf
Виробник: Microchip Technology
Description: MCP3004 4CH 10BIT SAR ADC EVB
Packaging: Box
Function: Analog to Digital Converter (ADC)
Type: Data Acquisition
Contents: Board(s)
Utilized IC / Part: MCP3004
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2396.18 грн
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JAN1N6628US
JAN1N6628US
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
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AT89LP6440-20MU doc3706.pdf
AT89LP6440-20MU
Виробник: Microchip Technology
Description: IC MCU 8BIT 64KB FLASH 44VQFN
Packaging: Tray
Package / Case: 44-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: 8051
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-VQFN (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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VXA4-1D1-25M0000000 1243749-vxa4
Виробник: Microchip Technology
Description: VXA4-1D1-25M0000000
Packaging: Bag
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PIC18F24K42T-E/SSVAO
PIC18F24K42T-E/SSVAO
Виробник: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 24x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 25
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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JANTXV1N5527B-1
JANTXV1N5527B-1
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.8 V
Qualification: MIL-PRF-19500/437
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JANTXV1N5527B-1/TR
JANTXV1N5527B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6.8 V
Qualification: MIL-PRF-19500/437
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DSC1124DI1-027.0000T DSC1104-24-Low-Jitter-Precision-HCSL-Oscillator-DS20005870B.pdf
DSC1124DI1-027.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 27.0000MHZ HCSL SMD
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 42mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 27 MHz
Base Resonator: MEMS
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JANTXV1N6627U
JANTXV1N6627U
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Qualification: MIL-PRF-19500/590
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DSC1001CL2-133.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001CL2-133.0000T
Виробник: Microchip Technology
Description: MEMS OSC., LOW POWER, 133MHZ, LV
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 133 MHz
Base Resonator: MEMS
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1N6336US
1N6336US
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
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JAN1N6336US/TR
JAN1N6336US/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANTX1N6336US 11083-lds-0193-1-datasheet
JANTX1N6336US
Виробник: Microchip Technology
Description: DIODE ZENER 33V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANTX1N6336US/TR 11083-lds-0193-1-datasheet
JANTX1N6336US/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANTXV1N6336US/TR
JANTXV1N6336US/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANS1N6336US/TR 11083-lds-0193-1-datasheet
JANS1N6336US/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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JANS1N6336US
JANS1N6336US
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
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PIC32MZ1024EFE100T-E/GJX PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf
PIC32MZ1024EFE100T-E/GJX
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PIC32MZ1024EFE100T-E/GJX PIC32MZ-Embedded-Connectivity-with-Floating-Point-Unit-Family-Data-Sheet-DS60001320H.pdf
PIC32MZ1024EFE100T-E/GJX
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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PIC32CK1025SG01064-I/3ZB-SL3 PIC32CK-SG01-SG00-GC01-GC00-Family-Data-Sheet-DS60001795.pdf
PIC32CK1025SG01064-I/3ZB-SL3
Виробник: Microchip Technology
Description: M33 HSM 1MB/256 64 TQFP
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SDHC, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, I2S, LVD, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 50
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+337.42 грн
25+295.16 грн
100+268.14 грн
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UPT12Re3/TR7 129557-upt-and-uptb-tvs-family-datasheet
UPT12Re3/TR7
Виробник: Microchip Technology
Description: TVS UPT 12V POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 150W
Power Line Protection: No
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1N3312RA 10905-sa5-21-datasheet
1N3312RA
Виробник: Microchip Technology
Description: DIODE ZENER 13V 50W DO5
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1.1 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
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1N3312RB 10905-sa5-21-datasheet
1N3312RB
Виробник: Microchip Technology
Description: DIODE ZENER 13V 50W DO5
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1.1 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.9 V
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JANTX1N757CUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7 V
Qualification: MIL-PRF-19500/127
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MLCE80A 9498-mlce-pdf
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MLCE80Ae3 9498-mlce-pdf
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJLCE80A 10562-msmclce-datasheet
MASMCJLCE80A
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCJLCE80Ae3 10562-msmclce-datasheet
MASMCJLCE80Ae3
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCGLCE80A 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCGLCE80Ae3 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MALCE80A 9498-mlce-pdf
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MALCE80Ae3 9498-mlce-pdf
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLCE80A 9498-mlce-pdf
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLCE80Ae3 9498-mlce-pdf
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLLCE80A 9498-mlce-pdf
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLLCE80Ae3 9498-mlce-pdf
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCGLCE80A 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCGLCE80Ae3 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCGLCE80A 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCGLCE80Ae3 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCJLCE80A 10562-msmclce-datasheet
MXSMCJLCE80A
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCJLCE80Ae3 10562-msmclce-datasheet
MXSMCJLCE80Ae3
Виробник: Microchip Technology
Description: TVS DIODE 80VWM 129VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.7V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N6628U 1N6626US%2C1N6631US.pdf
1N6628U
Виробник: Microchip Technology
Description: DIODE GP 660V 1.75A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
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