Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (339158) > Сторінка 1905 з 5653
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MASMCG64Ae3 | Microchip Technology |
 Description: TVS DIODE 64VWM 103VC SMCGPackaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 14.6A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MASMCG7.0A | Microchip Technology |
Description: TVS DIODE 7VWM 12VC DO214AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 125A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MASMCG7.0Ae3 | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMCG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 125A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MASMCG64CA | Microchip Technology |
Description: TVS DIODE 64VWM 103VC SMCG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 14.6A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-214AB (SMCG) Bidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MASMCG7.0CA | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMCG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 125A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AB (SMCG) Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JAN1N6141AUS | Microchip Technology |
Description: TVS DIODE 6.9VWM 13.4VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 111.9A Voltage - Reverse Standoff (Typ): 6.9V Supplier Device Package: C, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.65V Voltage - Clamping (Max) @ Ipp: 13.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/516 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N5647A | Microchip Technology |
Description: TVS DIODE 33.3VWM 53.9VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 28A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-13 (DO-202AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/500 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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M15KP24A | Microchip Technology |
Description: TVS DIODE 24VWM 40.7VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 369A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 40.7V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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M15KP26CA | Microchip Technology |
Description: TVS DIODE 26VWM 44VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 341A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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M15KP26CAE3 | Microchip Technology |
Description: TVS DIODE 26VWM 44VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 341A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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M15KP220A | Microchip Technology |
Description: TVS DIODE 220VWM 356VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 42A Voltage - Reverse Standoff (Typ): 220V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 245V Voltage - Clamping (Max) @ Ipp: 356V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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M15KP220Ae3 | Microchip Technology |
Description: TVS DIODE 220VWM 356VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 42A Voltage - Reverse Standoff (Typ): 220V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 245V Voltage - Clamping (Max) @ Ipp: 356V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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M15KP240Ae3 | Microchip Technology |
Description: TVS DIODE 240VWM 388VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 39A Voltage - Reverse Standoff (Typ): 240V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 267V Voltage - Clamping (Max) @ Ipp: 388V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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M15KP260A | Microchip Technology |
Description: TVS DIODE 260VWM 419VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 260V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 289V Voltage - Clamping (Max) @ Ipp: 419V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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M15KP260Ae3 | Microchip Technology |
Description: TVS DIODE 260VWM 419VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 260V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 289V Voltage - Clamping (Max) @ Ipp: 419V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PIC18F27Q10T-E/STX | Microchip Technology |
Description: 128KB FLASH, 3.6KB RAM, 256B EEP Packaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 128KB (64K x 16) RAM Size: 3.53K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: PIC Data Converters: A/D 24x10b SAR; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT Supplier Device Package: 28-VQFN (4x4) Number of I/O: 25 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| WP34C2R4NFEI-400B2 | Microchip Technology |
Description: WP3 4C2R4 400 MHZ, LF BALLS, PBF Packaging: Tray Package / Case: 896-BGA Mounting Type: Surface Mount Interface: I2C, RMII, UART Program Memory Type: SRAM Applications: Network Processor Core Processor: MIPS32® 34Kc™ Supplier Device Package: 896-B1BGA (31x31) |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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| WP32C2M6NELI-450B2 | Microchip Technology |
Description: WP3 2C2M6 450 MHZ, LF BALLS, PBF Packaging: Tray Package / Case: 896-BGA Mounting Type: Surface Mount Interface: I2C, RMII, UART Program Memory Type: SRAM Applications: Network Processor Core Processor: MIPS32® 34Kc™ Supplier Device Package: 896-B1BGA (31x31) |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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SAM9X75D2GT-I/4TB | Microchip Technology |
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS Packaging: Tape & Reel (TR) Package / Case: 243-LFBGA Mounting Type: Surface Mount Speed: 800MHz Operating Temperature: -40°C ~ 85°C (TA) Core Processor: ARM926EJ-S Voltage - I/O: 1.8V, 2.5V, 3.3V Supplier Device Package: 243-TFBGA (16x16) Ethernet: 10/100/1000Mbps (1) USB: USB (3) Number of Cores/Bus Width: 1 Core, 32-Bit RAM Controllers: DDR2, DDR3, DDR3L, SDRAM Graphics Acceleration: No Display & Interface Controllers: LCD, LVDS, MIPI/DSI Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SAM9X75D2GT-I/4TB | Microchip Technology |
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS Packaging: Cut Tape (CT) Package / Case: 243-LFBGA Mounting Type: Surface Mount Speed: 800MHz Operating Temperature: -40°C ~ 85°C (TA) Core Processor: ARM926EJ-S Voltage - I/O: 1.8V, 2.5V, 3.3V Supplier Device Package: 243-TFBGA (16x16) Ethernet: 10/100/1000Mbps (1) USB: USB (3) Number of Cores/Bus Width: 1 Core, 32-Bit RAM Controllers: DDR2, DDR3, DDR3L, SDRAM Graphics Acceleration: No Display & Interface Controllers: LCD, LVDS, MIPI/DSI Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB |
на замовлення 465 шт: термін постачання 21-31 дні (днів) |
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SAMA7G54D2GT-I/4UB | Microchip Technology |
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I Packaging: Tape & Reel (TR) Package / Case: 427-TFBGA Mounting Type: Surface Mount Speed: 1GHz Operating Temperature: -40°C ~ 105°C (TJ) Core Processor: ARM® Cortex®-A7 Voltage - I/O: 1.35V Supplier Device Package: 427-TFBGA (21x18) Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1) USB: USB (3) Number of Cores/Bus Width: 1 Core, 32-Bit Co-Processors/DSP: Multimedia; NEON™ MPE RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3 Graphics Acceleration: No Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512 Additional Interfaces: EBI, I2C, SPI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SAMA7G54D2GT-I/4UB | Microchip Technology |
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I Packaging: Cut Tape (CT) Package / Case: 427-TFBGA Mounting Type: Surface Mount Speed: 1GHz Operating Temperature: -40°C ~ 105°C (TJ) Core Processor: ARM® Cortex®-A7 Voltage - I/O: 1.35V Supplier Device Package: 427-TFBGA (21x18) Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1) USB: USB (3) Number of Cores/Bus Width: 1 Core, 32-Bit Co-Processors/DSP: Multimedia; NEON™ MPE RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3 Graphics Acceleration: No Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512 Additional Interfaces: EBI, I2C, SPI |
на замовлення 744 шт: термін постачання 21-31 дні (днів) |
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M15KP90CA/TR | Microchip Technology |
Description: TVS 90V 5% 15000W BI Packaging: Tape & Reel (TR) Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 103A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MAPLAD15KP90CA | Microchip Technology |
Description: TVS DIODE 90VWM 146VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 102A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1001 | Microchip Technology |
Description: DIODE GEN PURP 50V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1001/TR | Microchip Technology |
Description: DIODE GEN PURP 50V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1002/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1002SM | Microchip Technology |
Description: DIODE GEN PURP A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Supplier Device Package: A, Axial Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1003SM-1 | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1002SM-1 | Microchip Technology |
Description: DIODE GEN PURP 100V 2A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1001SM | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| UES1003SM/TR | Microchip Technology |
Description: RECTIFIER UFR,FRR Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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UES1002SM/TR | Microchip Technology |
Description: DIODE GEN PURP A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Supplier Device Package: A, Axial Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1002SM-1/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 2A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1001SM/TR | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1003SM-1/TR | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1003 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UES1003/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MPLAD7.5KP13A/TR | Microchip Technology |
Description: 13V, 5%, 8000W, UNI, MINI-PLAD, Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 349A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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M5KP13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 232A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| M5KP13A/TR | Microchip Technology |
Description: TVS 13V 5% 5000W UNI Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 233A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
AT90USB82-16MUR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 32VQFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-VQFN (5x5) Number of I/O: 22 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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|
AT90USB82-16MUR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 32VQFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-VQFN (5x5) Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 2763 шт: термін постачання 21-31 дні (днів) |
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AT90USB82-16MU | Microchip Technology |
 Description: IC MCU 8BIT 8KB FLASH 32VQFNPackaging: Tray Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-VQFN (5x5) Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 481 шт: термін постачання 21-31 дні (днів) |
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 |
2N2988 | Microchip Technology |
Description: TRANS PNP 100V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
2N2992 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N2990 | Microchip Technology |
Description: TRANS NPN 100V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N2994 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| 2N2324 | Microchip Technology |
Description: SCR 100V 200UA TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Supplier Device Package: TO-5 Grade: Military Voltage - Off State: 100 V Qualification: MIL-PRF-19500/276 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 2N2324A | Microchip Technology |
Description: SCR 100V 20UA TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 600 mV Supplier Device Package: TO-5 Grade: Military Voltage - Off State: 100 V Qualification: MIL-PRF-19500/276 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
APT100GF60JU2 | Microchip Technology |
Description: IGBT MOD 600V 120A 416W SOT-227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 416 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
2N3749 | Microchip Technology |
Description: TRANS NPN 80V 5A TO111 Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| Jantxv2N3749 | Microchip Technology |
Description: TRANS NPN 80V 5A TO111 Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Supplier Device Package: TO-111 Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W Qualification: MIL-PRF-19500/315 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 2N2892 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 2N2877 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 2N3746 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 2N3744 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 2N3751 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 2N5326 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 2N5328 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. |
| MASMCG64Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 64VWM 103VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MASMCG7.0A |
|
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 125A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 125A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MASMCG7.0Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 125A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 7VWM 12VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 125A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MASMCG64CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMCG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 64VWM 103VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMCG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MASMCG7.0CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 125A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB (SMCG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 7VWM 12VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 125A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB (SMCG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6141AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 6.9VWM 13.4VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 111.9A
Voltage - Reverse Standoff (Typ): 6.9V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 6.9VWM 13.4VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 111.9A
Voltage - Reverse Standoff (Typ): 6.9V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N5647A |
|
Виробник: Microchip Technology
Description: TVS DIODE 33.3VWM 53.9VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
Description: TVS DIODE 33.3VWM 53.9VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/500
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4076.60 грн |
| 100+ | 3645.55 грн |
| M15KP24A |
|
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 40.7VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 369A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 40.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 24VWM 40.7VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 369A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 40.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
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| M15KP26CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 26VWM 44VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 341A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 26VWM 44VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 341A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| M15KP26CAE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 26VWM 44VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 341A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 26VWM 44VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 341A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| M15KP220A |
|
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 220VWM 356VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| M15KP220Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 220VWM 356VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 42A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| M15KP240Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 240VWM 388VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 240V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 267V
Voltage - Clamping (Max) @ Ipp: 388V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 240VWM 388VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 240V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 267V
Voltage - Clamping (Max) @ Ipp: 388V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| M15KP260A |
|
Виробник: Microchip Technology
Description: TVS DIODE 260VWM 419VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 419V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 260VWM 419VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 419V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| M15KP260Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 260VWM 419VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 419V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 260VWM 419VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 419V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| PIC18F27Q10T-E/STX |
Виробник: Microchip Technology
Description: 128KB FLASH, 3.6KB RAM, 256B EEP
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 3.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x10b SAR; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-VQFN (4x4)
Number of I/O: 25
Description: 128KB FLASH, 3.6KB RAM, 256B EEP
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 3.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x10b SAR; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-VQFN (4x4)
Number of I/O: 25
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| WP34C2R4NFEI-400B2 |
|
Виробник: Microchip Technology
Description: WP3 4C2R4 400 MHZ, LF BALLS, PBF
Packaging: Tray
Package / Case: 896-BGA
Mounting Type: Surface Mount
Interface: I2C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-B1BGA (31x31)
Description: WP3 4C2R4 400 MHZ, LF BALLS, PBF
Packaging: Tray
Package / Case: 896-BGA
Mounting Type: Surface Mount
Interface: I2C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-B1BGA (31x31)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 14381.80 грн |
| 25+ | 11511.06 грн |
| WP32C2M6NELI-450B2 |
Виробник: Microchip Technology
Description: WP3 2C2M6 450 MHZ, LF BALLS, PBF
Packaging: Tray
Package / Case: 896-BGA
Mounting Type: Surface Mount
Interface: I2C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-B1BGA (31x31)
Description: WP3 2C2M6 450 MHZ, LF BALLS, PBF
Packaging: Tray
Package / Case: 896-BGA
Mounting Type: Surface Mount
Interface: I2C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-B1BGA (31x31)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 55371.81 грн |
| SAM9X75D2GT-I/4TB |
|
Виробник: Microchip Technology
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Packaging: Tape & Reel (TR)
Package / Case: 243-LFBGA
Mounting Type: Surface Mount
Speed: 800MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM926EJ-S
Voltage - I/O: 1.8V, 2.5V, 3.3V
Supplier Device Package: 243-TFBGA (16x16)
Ethernet: 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Graphics Acceleration: No
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Packaging: Tape & Reel (TR)
Package / Case: 243-LFBGA
Mounting Type: Surface Mount
Speed: 800MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM926EJ-S
Voltage - I/O: 1.8V, 2.5V, 3.3V
Supplier Device Package: 243-TFBGA (16x16)
Ethernet: 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Graphics Acceleration: No
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
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| SAM9X75D2GT-I/4TB |
|
Виробник: Microchip Technology
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Packaging: Cut Tape (CT)
Package / Case: 243-LFBGA
Mounting Type: Surface Mount
Speed: 800MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM926EJ-S
Voltage - I/O: 1.8V, 2.5V, 3.3V
Supplier Device Package: 243-TFBGA (16x16)
Ethernet: 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Graphics Acceleration: No
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Packaging: Cut Tape (CT)
Package / Case: 243-LFBGA
Mounting Type: Surface Mount
Speed: 800MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM926EJ-S
Voltage - I/O: 1.8V, 2.5V, 3.3V
Supplier Device Package: 243-TFBGA (16x16)
Ethernet: 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Graphics Acceleration: No
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
на замовлення 465 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1842.01 грн |
| 25+ | 1478.24 грн |
| 100+ | 1427.80 грн |
| SAMA7G54D2GT-I/4UB |
|
Виробник: Microchip Technology
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Tape & Reel (TR)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Tape & Reel (TR)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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| SAMA7G54D2GT-I/4UB |
|
Виробник: Microchip Technology
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Cut Tape (CT)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Cut Tape (CT)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
на замовлення 744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1133.48 грн |
| 25+ | 1001.00 грн |
| 100+ | 906.74 грн |
| M15KP90CA/TR |
Виробник: Microchip Technology
Description: TVS 90V 5% 15000W BI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS 90V 5% 15000W BI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MAPLAD15KP90CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| UES1001 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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| UES1001/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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| UES1002/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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| UES1002SM |
Виробник: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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| UES1003SM-1 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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| UES1002SM-1 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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| UES1001SM |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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| UES1002SM/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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| UES1002SM-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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| UES1001SM/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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| UES1003SM-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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| UES1003 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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| UES1003/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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| MPLAD7.5KP13A/TR |
Виробник: Microchip Technology
Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| M5KP13A |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| M5KP13A/TR |
Виробник: Microchip Technology
Description: TVS 13V 5% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS 13V 5% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| AT90USB82-16MUR |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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| AT90USB82-16MUR |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 2763 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 254.63 грн |
| 25+ | 225.22 грн |
| 100+ | 204.69 грн |
| AT90USB82-16MU | |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.41 грн |
| 25+ | 216.04 грн |
| 100+ | 194.07 грн |
| 2N2988 |
Виробник: Microchip Technology
Description: TRANS PNP 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: TRANS PNP 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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| 2N2992 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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| 2N2990 |
Виробник: Microchip Technology
Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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| 2N2994 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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| 2N2324 |
|
Виробник: Microchip Technology
Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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| 2N2324A |
|
Виробник: Microchip Technology
Description: SCR 100V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
Description: SCR 100V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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| APT100GF60JU2 |
|
Виробник: Microchip Technology
Description: IGBT MOD 600V 120A 416W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Description: IGBT MOD 600V 120A 416W SOT-227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
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| 2N3749 |
Виробник: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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| Jantxv2N3749 |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: MIL-PRF-19500/315
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: MIL-PRF-19500/315
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| 2N2892 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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| 2N2877 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
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| 2N3746 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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| 2N3744 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
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| 2N3751 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
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| 2N5326 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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| 2N5328 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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