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2N5116UA 2N5116UA Microchip Technology 124387-lds-0006.pdf Description: JFET P-CH 30V UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UA
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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MV2N5116UB/TR MV2N5116UB/TR Microchip Technology 123965-lds-0006-1.pdf Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
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DSC6011ME1A-050.0000T DSC6011ME1A-050.0000T Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VFLGA (2x1.6)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 50 MHz
Base Resonator: MEMS
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ATMEGA161L-4PI ATMEGA161L-4PI Microchip Technology doc1228.pdf Description: IC MCU 8BIT 16KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 4MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 35
DigiKey Programmable: Not Verified
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PD77728ILQ-0111-TR PD77728ILQ-0111-TR Microchip Technology PD77728-8-Port-PoE-Manager-Controller-Data-Sheet.pdf Description: 8 PORT IEEE 802.3 BT TYPE 4, FUL
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PSE)
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 44V ~ 57V
Current - Supply: 1.5mA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 56-QFN (8x8)
Auxiliary Sense: No
Number of Channels: 8
Power - Max: 90 W
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PD77728ILQ-0111-TR PD77728ILQ-0111-TR Microchip Technology PD77728-8-Port-PoE-Manager-Controller-Data-Sheet.pdf Description: 8 PORT IEEE 802.3 BT TYPE 4, FUL
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PSE)
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 44V ~ 57V
Current - Supply: 1.5mA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 56-QFN (8x8)
Auxiliary Sense: No
Number of Channels: 8
Power - Max: 90 W
на замовлення 1448 шт:
термін постачання 21-31 дні (днів)
1+572.27 грн
25+459.04 грн
100+443.37 грн
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PD-9501GO-ET/AC Microchip Technology 137444-pd-9501go-et-datasheet Description: 1-PORT AT 60W OUTDOOR ET AC INTL
Features: IP67
Packaging: Bulk
Size / Dimension: 6.69" L x 5.51" W x 2.36" H (169.9mm x 140.0mm x 59.9mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: -40°C ~ 65°C
Data Rate: 10/100/1000 Mbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3at
Number of Ports: 1
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JANTX1N6463US JANTX1N6463US Microchip Technology 11066-sd50a-datasheet Description: TVS DIODE 12VWM 22.6VC B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 125A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: B, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.6V
Voltage - Clamping (Max) @ Ipp: 22.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/551
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M1.5KE51A M1.5KE51A Microchip Technology RF01008_rE.pdf Description: TVS DIODE 43.6VWM 70.1VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
2+221.42 грн
Мінімальне замовлення: 2
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SAMA7G54D1GT-I/4UB-SL3 Microchip Technology Description: CORTEX-A7 MPU,BGA,IND TEMP,1GB D
Packaging: Tape & Reel (TR)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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SAMA7G54D1G-I/4UB-SL3 Microchip Technology Description: CORTEX-A7 MPU,BGA,IND TEMP,1GB D
Packaging: Tray
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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ATSAME53J18A-MF ATSAME53J18A-MF Microchip Technology SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf Description: IC MCU 32BIT 256KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+509.26 грн
25+448.57 грн
100+407.71 грн
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ATSAMW25H18-MR210PA ATSAMW25H18-MR210PA Microchip Technology Atmel-42395-SmartConnect-ATSAMW25-MR210PA_Datasheet.pdf Description: RF TXRX MOD WIFI TH SMD
Packaging: Bulk
Package / Case: Module
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.2V
Power - Output: 17dBm
Data Rate: 65Mbps
Protocol: 802.11b/g/n
Antenna Type: Integrated, Trace
RF Family/Standard: WiFi
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
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2304400-R 2304400-R Microchip Technology 00003375A.pdf Description: SMARTRAID 3101E-4I SINGLE
Packaging: Bulk
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 4
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+26083.62 грн
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2293800-R 2293800-R Microchip Technology 137597-microsemi-adaptec-hba-1100-product-brief Description: HBA 1100-24I2B SINGLE
Packaging: Bulk
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 24
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+55003.07 грн
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CDLL5528D CDLL5528D Microchip Technology Description: DIODE ZENER 8.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V
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CDLL5528D/TR CDLL5528D/TR Microchip Technology Description: DIODE ZENER 8.2V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V
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24CW640T-I/Q4B 24CW640T-I/Q4B Microchip Technology 24CW16X-24CW32X-24CW64X-24CW128X-Data-Sheet-20005772B.pdf Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
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24CW640T-I/Q4B 24CW640T-I/Q4B Microchip Technology 24CW16X-24CW32X-24CW64X-24CW128X-Data-Sheet-20005772B.pdf Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
на замовлення 4838 шт:
термін постачання 21-31 дні (днів)
10+35.77 грн
Мінімальне замовлення: 10
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24CW640-I/ST 24CW640-I/ST Microchip Technology 24CW16X-24CW32X-24CW64X-24CW128X-Data-Sheet-20005772B.pdf Description: IC EEPROM 64KBIT I2C 1MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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1N5233B 1N5233B Microchip Technology 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
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1n5997b 1n5997b Microchip Technology 1N5985B-1_1N6031B-1.pdf Description: DIODE ZENER 7.5V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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MCP42U83T-502E/ST MCP42U83T-502E/ST Microchip Technology MCP42U83-Data-Sheet-DS20006961.pdf Description: 5 K? 10B DIGITAL POTENTIOMETER
Resistance (Ohms): 5k
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer, Rheostat
Operating Temperature: -40°C ~ 125°C
Number of Taps: 1024
Voltage - Supply: 2.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Temperature Coefficient (Typ): 43ppm/°C
Number of Circuits: 2
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MCP42U83T-502E/ST MCP42U83T-502E/ST Microchip Technology MCP42U83-Data-Sheet-DS20006961.pdf Description: 5 K? 10B DIGITAL POTENTIOMETER
Resistance (Ohms): 5k
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer, Rheostat
Operating Temperature: -40°C ~ 125°C
Number of Taps: 1024
Voltage - Supply: 2.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Temperature Coefficient (Typ): 43ppm/°C
Number of Circuits: 2
на замовлення 2267 шт:
термін постачання 21-31 дні (днів)
1+430.91 грн
25+345.90 грн
100+314.25 грн
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1N5063 Microchip Technology Description: DIODE ZENER 6.8V 3W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: Axial
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 µA @ 5.2 V
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1N5063SM 1N5063SM Microchip Technology Description: DIODE ZENER 6.8V 3W SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 µA @ 5.2 V
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1N4056R Microchip Technology 1N4044-1N4056.pdf Description: DIODE STD REV 1000V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
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1N4052 Microchip Technology 1N4044-1N4056.pdf Description: DIODE STANDARD 600V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 600 V
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1N4052R Microchip Technology 1N4044-1N4056.pdf Description: DIODE STD REV 600V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 600 V
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1N4051 Microchip Technology 1N4044-1N4056.pdf Description: DIODE STANDARD 500V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 500 V
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1N4055 Microchip Technology 1N4044-1N4056.pdf Description: DIODE STANDARD 900V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 900 V
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1N4051R Microchip Technology 1N4044-1N4056.pdf Description: DIODE STD REV 500V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 500 V
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1N4053R Microchip Technology 1N4044-1N4056.pdf Description: DIODE STD REV 700V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 700 V
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1N4055R Microchip Technology 1N4044-1N4056.pdf Description: DIODE STD REV 900V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 900 V
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1N4054 Microchip Technology 1N4044-1N4056.pdf Description: DIODE STANDARD 800V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 800 V
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1N4056 Microchip Technology 1N4044-1N4056.pdf Description: DIODE STD 1000V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
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1N4050 Microchip Technology 1N4044-1N4056.pdf Description: DIODE STANDARD 400V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 400 V
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1N4054R Microchip Technology 1N4044-1N4056.pdf Description: DIODE STD REV 800V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 800 V
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1N4050R Microchip Technology 1N4044-1N4056.pdf Description: DIODE STD REV 400V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 400 V
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1N4053 Microchip Technology 1N4044-1N4056.pdf Description: DIODE STANDARD 700V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 700 V
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M5KP110A M5KP110A Microchip Technology rf01010_rb.pdf Description: TVS DIODE 110VWM 177VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M5KP110A/TR Microchip Technology Description: TVS DIODE 110VWM 177VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.2A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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M15KP110AE3/TR M15KP110AE3/TR Microchip Technology Description: TVS DIODE 110VWM 178VC DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M15KP110A/TR M15KP110A/TR Microchip Technology Description: TVS DIODE 110VWM 178VC DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP110A MAPLAD15KP110A Microchip Technology mplad15kp.pdf Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP110Ae3 MAPLAD15KP110Ae3 Microchip Technology mplad15kp.pdf Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA15KP110A MA15KP110A Microchip Technology rf01011_m15kp_rev_e.pdf Description: TVS DIODE 110VWM 178VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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EV02G02A EV02G02A Microchip Technology dsPIC33AK128MC106-General-Purpose-DIM-Info-Sheet-DS70005556.pdf Description: DSPIC33AK128MC106 GP DIM
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 16-Bit
Contents: Board(s)
Core Processor: dsPIC
Utilized IC / Part: dsPIC33AK128MC106
Platform: Curiosity
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+1350.64 грн
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M1.5KE13A Microchip Technology RF01008_rE.pdf Description: TVS DIODE 11.1VWM 18.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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2N3772 2N3772 Microchip Technology 2N3772.pdf 2N3771%2C%202N3772.pdf Description: TRANS NPN 60V 20A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 6 W
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MSMCJ48A MSMCJ48A Microchip Technology rf01001_rev_b_final-pd-000307351.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APT10050B2VFRG APT10050B2VFRG Microchip Technology 5634-apt10050b2vfr-apt10050lvfr-datasheet Description: MOSFET N-CH 1000V 21A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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APT10050JVFR APT10050JVFR Microchip Technology 5636-apt10050jvfr-datasheet Description: MOSFET N-CH 1000V 19A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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UFT3010D UFT3010D Microchip Technology Description: DIODE ARRAY GP 100V 30A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-204AA (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
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ATWILC1001A-MU-Y ATWILC1001A-MU-Y Microchip Technology Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -98dBm
Mounting Type: Surface Mount
Frequency: 2.412GHz ~ 2.484GHz
Memory Size: 128kB RAM, 128kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Power - Output: 20.6dBm
Protocol: 802.11b/g/n
Data Rate (Max): 72.2Mbps
Supplier Device Package: 40-QFN (5x5)
GPIO: 4
Modulation: CCK, DSSS, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
DigiKey Programmable: Not Verified
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DSC1001BI2-028.8000T DSC1001BI2-028.8000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 28.8000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-CDFN (5x3.2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.8 MHz
Base Resonator: MEMS
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DSC1001BI2-028.8000 DSC1001BI2-028.8000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 28.8000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-CDFN (5x3.2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.8 MHz
Base Resonator: MEMS
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1N748A 1N748A Microchip Technology 10928-sa5-7-datasheet Description: DIODE ZENER 3.9V 500MW DO7
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-7 (DO-204AA)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
3+151.58 грн
100+136.27 грн
Мінімальне замовлення: 3
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2N4211 Microchip Technology Description: TRANS PNP 80V 20A TO-63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 100 W
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SY88432LMG-TR SY88432LMG-TR Microchip Technology SY88432L.pdf Description: IC LASER DRVR 4.25GB 3.6V 24QFN
Packaging: Bulk
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Laser Diode Driver (Fiber Optic)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Data Rate: 4.25Gbps
Current - Modulation: 60mA
Supplier Device Package: 24-QFN (4x4)
Number of Channels: 1
Current - Supply: 90 mA
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термін постачання 21-31 дні (днів)
37+612.46 грн
Мінімальне замовлення: 37
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2N5116UA 124387-lds-0006.pdf
2N5116UA
Виробник: Microchip Technology
Description: JFET P-CH 30V UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UA
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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MV2N5116UB/TR 123965-lds-0006-1.pdf
MV2N5116UB/TR
Виробник: Microchip Technology
Description: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 175 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Qualification: MIL-PRF-19500
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DSC6011ME1A-050.0000T DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6011ME1A-050.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VFLGA (2x1.6)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 50 MHz
Base Resonator: MEMS
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ATMEGA161L-4PI doc1228.pdf
ATMEGA161L-4PI
Виробник: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 4MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 35
DigiKey Programmable: Not Verified
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PD77728ILQ-0111-TR PD77728-8-Port-PoE-Manager-Controller-Data-Sheet.pdf
PD77728ILQ-0111-TR
Виробник: Microchip Technology
Description: 8 PORT IEEE 802.3 BT TYPE 4, FUL
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PSE)
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 44V ~ 57V
Current - Supply: 1.5mA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 56-QFN (8x8)
Auxiliary Sense: No
Number of Channels: 8
Power - Max: 90 W
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PD77728ILQ-0111-TR PD77728-8-Port-PoE-Manager-Controller-Data-Sheet.pdf
PD77728ILQ-0111-TR
Виробник: Microchip Technology
Description: 8 PORT IEEE 802.3 BT TYPE 4, FUL
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PSE)
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V, 44V ~ 57V
Current - Supply: 1.5mA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 56-QFN (8x8)
Auxiliary Sense: No
Number of Channels: 8
Power - Max: 90 W
на замовлення 1448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+572.27 грн
25+459.04 грн
100+443.37 грн
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PD-9501GO-ET/AC 137444-pd-9501go-et-datasheet
Виробник: Microchip Technology
Description: 1-PORT AT 60W OUTDOOR ET AC INTL
Features: IP67
Packaging: Bulk
Size / Dimension: 6.69" L x 5.51" W x 2.36" H (169.9mm x 140.0mm x 59.9mm)
Voltage - Output: 54V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: -40°C ~ 65°C
Data Rate: 10/100/1000 Mbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3at
Number of Ports: 1
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JANTX1N6463US 11066-sd50a-datasheet
JANTX1N6463US
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 22.6VC B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 125A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: B, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.6V
Voltage - Clamping (Max) @ Ipp: 22.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/551
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M1.5KE51A RF01008_rE.pdf
M1.5KE51A
Виробник: Microchip Technology
Description: TVS DIODE 43.6VWM 70.1VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+221.42 грн
Мінімальне замовлення: 2
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SAMA7G54D1GT-I/4UB-SL3
Виробник: Microchip Technology
Description: CORTEX-A7 MPU,BGA,IND TEMP,1GB D
Packaging: Tape & Reel (TR)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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SAMA7G54D1G-I/4UB-SL3
Виробник: Microchip Technology
Description: CORTEX-A7 MPU,BGA,IND TEMP,1GB D
Packaging: Tray
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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ATSAME53J18A-MF SAM_D5x_E5x_Family_Data_Sheet_DS60001507G.pdf
ATSAME53J18A-MF
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+509.26 грн
25+448.57 грн
100+407.71 грн
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ATSAMW25H18-MR210PA Atmel-42395-SmartConnect-ATSAMW25-MR210PA_Datasheet.pdf
ATSAMW25H18-MR210PA
Виробник: Microchip Technology
Description: RF TXRX MOD WIFI TH SMD
Packaging: Bulk
Package / Case: Module
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.2V
Power - Output: 17dBm
Data Rate: 65Mbps
Protocol: 802.11b/g/n
Antenna Type: Integrated, Trace
RF Family/Standard: WiFi
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
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2304400-R 00003375A.pdf
2304400-R
Виробник: Microchip Technology
Description: SMARTRAID 3101E-4I SINGLE
Packaging: Bulk
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 4
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+26083.62 грн
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2293800-R 137597-microsemi-adaptec-hba-1100-product-brief
2293800-R
Виробник: Microchip Technology
Description: HBA 1100-24I2B SINGLE
Packaging: Bulk
Interface: PCI Express
Type: SAS/SATA
Number of Ports: 24
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+55003.07 грн
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CDLL5528D
CDLL5528D
Виробник: Microchip Technology
Description: DIODE ZENER 8.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V
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CDLL5528D/TR
CDLL5528D/TR
Виробник: Microchip Technology
Description: DIODE ZENER 8.2V 500MW DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V
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24CW640T-I/Q4B 24CW16X-24CW32X-24CW64X-24CW128X-Data-Sheet-20005772B.pdf
24CW640T-I/Q4B
Виробник: Microchip Technology
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
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24CW640T-I/Q4B 24CW16X-24CW32X-24CW64X-24CW128X-Data-Sheet-20005772B.pdf
24CW640T-I/Q4B
Виробник: Microchip Technology
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
на замовлення 4838 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.77 грн
Мінімальне замовлення: 10
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24CW640-I/ST 24CW16X-24CW32X-24CW64X-24CW128X-Data-Sheet-20005772B.pdf
24CW640-I/ST
Виробник: Microchip Technology
Description: IC EEPROM 64KBIT I2C 1MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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1N5233B 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5233B
Виробник: Microchip Technology
Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
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1n5997b 1N5985B-1_1N6031B-1.pdf
1n5997b
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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MCP42U83T-502E/ST MCP42U83-Data-Sheet-DS20006961.pdf
MCP42U83T-502E/ST
Виробник: Microchip Technology
Description: 5 K? 10B DIGITAL POTENTIOMETER
Resistance (Ohms): 5k
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer, Rheostat
Operating Temperature: -40°C ~ 125°C
Number of Taps: 1024
Voltage - Supply: 2.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Temperature Coefficient (Typ): 43ppm/°C
Number of Circuits: 2
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MCP42U83T-502E/ST MCP42U83-Data-Sheet-DS20006961.pdf
MCP42U83T-502E/ST
Виробник: Microchip Technology
Description: 5 K? 10B DIGITAL POTENTIOMETER
Resistance (Ohms): 5k
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer, Rheostat
Operating Temperature: -40°C ~ 125°C
Number of Taps: 1024
Voltage - Supply: 2.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Temperature Coefficient (Typ): 43ppm/°C
Number of Circuits: 2
на замовлення 2267 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+430.91 грн
25+345.90 грн
100+314.25 грн
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1N5063
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 3W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: Axial
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 µA @ 5.2 V
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1N5063SM
1N5063SM
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 3W SQ-MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 µA @ 5.2 V
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1N4056R 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STD REV 1000V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
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1N4052 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 600 V
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1N4052R 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STD REV 600V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 600 V
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1N4051 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD 500V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 500 V
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1N4055 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD 900V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 900 V
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1N4051R 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STD REV 500V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 500 V
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1N4053R 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STD REV 700V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 700 V
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1N4055R 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STD REV 900V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 900 V
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1N4054 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD 800V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 800 V
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1N4056 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STD 1000V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
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1N4050 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 400 V
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1N4054R 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STD REV 800V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 800 V
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1N4050R 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STD REV 400V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 400 V
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1N4053 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE STANDARD 700V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 700 V
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M5KP110A rf01010_rb.pdf
M5KP110A
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M5KP110A/TR
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.2A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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M15KP110AE3/TR
M15KP110AE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M15KP110A/TR
M15KP110A/TR
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP110A mplad15kp.pdf
MAPLAD15KP110A
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP110Ae3 mplad15kp.pdf
MAPLAD15KP110Ae3
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA15KP110A rf01011_m15kp_rev_e.pdf
MA15KP110A
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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EV02G02A dsPIC33AK128MC106-General-Purpose-DIM-Info-Sheet-DS70005556.pdf
EV02G02A
Виробник: Microchip Technology
Description: DSPIC33AK128MC106 GP DIM
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 16-Bit
Contents: Board(s)
Core Processor: dsPIC
Utilized IC / Part: dsPIC33AK128MC106
Platform: Curiosity
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1350.64 грн
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M1.5KE13A RF01008_rE.pdf
Виробник: Microchip Technology
Description: TVS DIODE 11.1VWM 18.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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2N3772 2N3772.pdf 2N3771%2C%202N3772.pdf
2N3772
Виробник: Microchip Technology
Description: TRANS NPN 60V 20A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 6 W
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MSMCJ48A rf01001_rev_b_final-pd-000307351.pdf
MSMCJ48A
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 77.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APT10050B2VFRG 5634-apt10050b2vfr-apt10050lvfr-datasheet
APT10050B2VFRG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 21A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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APT10050JVFR 5636-apt10050jvfr-datasheet
APT10050JVFR
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 19A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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UFT3010D
UFT3010D
Виробник: Microchip Technology
Description: DIODE ARRAY GP 100V 30A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-204AA (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
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ATWILC1001A-MU-Y
ATWILC1001A-MU-Y
Виробник: Microchip Technology
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -98dBm
Mounting Type: Surface Mount
Frequency: 2.412GHz ~ 2.484GHz
Memory Size: 128kB RAM, 128kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Power - Output: 20.6dBm
Protocol: 802.11b/g/n
Data Rate (Max): 72.2Mbps
Supplier Device Package: 40-QFN (5x5)
GPIO: 4
Modulation: CCK, DSSS, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
DigiKey Programmable: Not Verified
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DSC1001BI2-028.8000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001BI2-028.8000T
Виробник: Microchip Technology
Description: MEMS OSC XO 28.8000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-CDFN (5x3.2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.8 MHz
Base Resonator: MEMS
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DSC1001BI2-028.8000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001BI2-028.8000
Виробник: Microchip Technology
Description: MEMS OSC XO 28.8000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Supplier Device Package: 4-CDFN (5x3.2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.8 MHz
Base Resonator: MEMS
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1N748A 10928-sa5-7-datasheet
1N748A
Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 500MW DO7
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-7 (DO-204AA)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.58 грн
100+136.27 грн
Мінімальне замовлення: 3
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2N4211
Виробник: Microchip Technology
Description: TRANS PNP 80V 20A TO-63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 100 W
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SY88432LMG-TR SY88432L.pdf
SY88432LMG-TR
Виробник: Microchip Technology
Description: IC LASER DRVR 4.25GB 3.6V 24QFN
Packaging: Bulk
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Laser Diode Driver (Fiber Optic)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Data Rate: 4.25Gbps
Current - Modulation: 60mA
Supplier Device Package: 24-QFN (4x4)
Number of Channels: 1
Current - Supply: 90 mA
на замовлення 233961 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+612.46 грн
Мінімальне замовлення: 37
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