Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (295136) > Сторінка 4919 з 4919
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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SMAJ6.5CAe3/TR13 | MICROCHIP TECHNOLOGY |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.5kW; 7.22V; 35.7A; bidirectional; DO214AC,SMA; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.5kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22V Max. forward impulse current: 35.7A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 5000pcs. Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
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TC1223-5.0VCTTR | MICROCHIP TECHNOLOGY |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,fixed; 5V; 0.05A; SOT23A-5; SMD; TC1223 Type of integrated circuit: voltage regulator Case: SOT23A-5 Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Number of channels: 1 Integrated circuit features: shutdown mode control input Manufacturer standard package: 3000pcs. Input voltage: 2.7...6V Manufacturer series: TC1223 Output current: 50mA Voltage drop: 85mV Output voltage: 5V Tolerance: ±0.5% Kind of voltage regulator: fixed; LDO |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| M1.5KE22A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 20.9V; 49A; unidirectional; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18.8V Breakdown voltage: 20.9V Max. forward impulse current: 49A Semiconductor structure: unidirectional Mounting: THT Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |
| M1.5KE22Ae3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 20.9V; unidirectional; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18.8V Breakdown voltage: 20.9V Semiconductor structure: unidirectional Mounting: THT Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |
| MA1.5KE22A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 20.9V; 49A; unidirectional; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18.8V Breakdown voltage: 20.9V Max. forward impulse current: 49A Semiconductor structure: unidirectional Mounting: THT Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |
| MA1.5KE22Ae3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 20.9V; 1.5kW; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18.8V Breakdown voltage: 20.9V Mounting: THT Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |
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LAN9255/ZMX019 | MICROCHIP TECHNOLOGY |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet controller; full duplex,half duplex,MDI-X,SPI Type of integrated circuit: Ethernet controller Interface: full duplex; half duplex; MDI-X; SPI Case: TQFP128 Ethernet category: 100Base-TX Mounting: SMD Integrated circuit features: MAC; PHY Communictions protocol: IEEE 802.3; IEEE 802.3u Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V Manufacturer standard package: 90pcs. |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. |
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LAN9255/ZMX020 | MICROCHIP TECHNOLOGY |
Category: Ethernet interfaces -integrated circuits Description: IC: Ethernet controller; full duplex,half duplex,MDI-X,SPI Type of integrated circuit: Ethernet controller Interface: full duplex; half duplex; MDI-X; SPI Case: TQFP128 Ethernet category: 100Base-TX Mounting: SMD Integrated circuit features: MAC; PHY Communictions protocol: IEEE 802.3; IEEE 802.3u Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V Manufacturer standard package: 90pcs. |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. |
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1N5935D | MICROCHIP TECHNOLOGY |
Category: THT Zener diodes Description: Diode: Zener; 1.25W; 27V; DO41; 1uA; Ufmax: 1.2V Type of diode: Zener Mounting: THT Case: DO41 Max. forward voltage: 1.2V Leakage current: 1µA Zener voltage: 27V Tolerance: ±1% Power dissipation: 1.25W |
товару немає в наявності |
Мінімальне замовлення: 114 шт В кошику од. на суму грн. |
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1N5935DG | MICROCHIP TECHNOLOGY |
Category: THT Zener diodes Description: Diode: Zener; 1.25W; 27V; DO41; 1uA; Ufmax: 1.2V Type of diode: Zener Mounting: THT Case: DO41 Max. forward voltage: 1.2V Leakage current: 1µA Zener voltage: 27V Tolerance: ±1% Power dissipation: 1.25W |
товару немає в наявності |
Мінімальне замовлення: 114 шт В кошику од. на суму грн. |
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1N5939D | MICROCHIP TECHNOLOGY |
Category: THT Zener diodes Description: Diode: Zener; 1.25W; 39V; DO41; 1uA; Ufmax: 1.2V Case: DO41 Mounting: THT Tolerance: ±1% Leakage current: 1µA Zener voltage: 39V Type of diode: Zener Max. forward voltage: 1.2V Power dissipation: 1.25W |
товару немає в наявності |
Мінімальне замовлення: 114 шт В кошику од. на суму грн. |
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1N5939DG | MICROCHIP TECHNOLOGY |
Category: THT Zener diodes Description: Diode: Zener; 1.25W; 39V; DO41; 1uA; Ufmax: 1.2V Case: DO41 Mounting: THT Tolerance: ±1% Leakage current: 1µA Zener voltage: 39V Type of diode: Zener Max. forward voltage: 1.2V Power dissipation: 1.25W |
товару немає в наявності |
Мінімальне замовлення: 114 шт В кошику од. на суму грн. |
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ATTINY28V-1MU | MICROCHIP TECHNOLOGY |
Category: 8-bit AVR family Description: IC: AVR microcontroller; ATTINY; VQFN32; 1.8÷5.5VDC; Ext.inter: 10 Type of integrated circuit: AVR microcontroller Family: ATTINY Case: VQFN32 Clock frequency: 4MHz Number of inputs/outputs: 19/11 Number of 8bit timers: 1 Mounting: SMD Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Operating frequency: 1.2MHz Number of external interrupts: 10 Memory: 32B SRAM; 2kB FLASH Number of comparators: 1 Integrated circuit features: PoR; watchdog Kind of package: in-tray Terminal pitch: 0.5mm Manufacturer standard package: 490pcs. Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. |
| ATTINY20-UUR | MICROCHIP TECHNOLOGY |
Category: 8-bit AVR family Description: IC: AVR microcontroller; ATTINY; WLSCP12; 1.8÷5.5VDC; Ext.inter: 8 Type of integrated circuit: AVR microcontroller Family: ATTINY Case: WLSCP12 Clock frequency: 12MHz Number of inputs/outputs: 10 Number of PWM channels: 3 Number of 8bit timers: 2 Mounting: SMD Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Operating frequency: 12MHz Number of external interrupts: 8 Interface: I2C; SPI Memory: 128B SRAM; 2kB FLASH Number of output compare channels: 4 Number of comparators: 1 Integrated circuit features: internal temperature sensor Number of 10bit A/D converters: 8 Kind of package: reel; tape Terminal pitch: 0.4mm Manufacturer standard package: 5000pcs. Kind of core: 8-bit Number of input capture channels: 1 Number of 16bit timers: 1 Number of capacitive channels: 5 |
товару немає в наявності |
В кошику од. на суму грн. | |
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ATTINY1614-SSF | MICROCHIP TECHNOLOGY |
Category: 8-bit AVR family Description: IC: AVR microcontroller; ATTINY; SOIC14; 2.7÷5.5VDC; Ext.inter: 12 Type of integrated circuit: AVR microcontroller Family: ATTINY Case: SOIC14 Clock frequency: 20MHz Number of inputs/outputs: 12 Number of PWM channels: 6 Number of 8bit timers: 1 Mounting: SMD Supply voltage: 2.7...5.5V DC Operating temperature: -40...125°C Operating frequency: 16MHz Number of external interrupts: 12 Interface: I2C; SPI; UART Memory: 256B EEPROM; 2kB SRAM; 16kB FLASH Number of comparators: 3 Integrated circuit features: CRC; picoPower mode; PTC Number of 10bit A/D converters: 10 Kind of package: tube Manufacturer standard package: 57pcs. Kind of core: 8-bit Number of input capture channels: 2 Number of 16bit timers: 3 Sampling speed: 115ksps Number of 8bit A/D converters: 1 Manufacturer series: tinyAVR 1 |
товару немає в наявності |
В кошику од. на суму грн. |
| MPLAD18KP100A | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 111V; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 111V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 0.1kV Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP100A/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 111V; automotive industry; Ch: 1; reel,tape Mounting: SMD Breakdown voltage: 111V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Application: automotive industry Max. off-state voltage: 0.1kV Kind of package: reel; tape Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP100AE3/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 111V; automotive industry; Ch: 1; reel,tape Mounting: SMD Breakdown voltage: 111V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Application: automotive industry Max. off-state voltage: 0.1kV Kind of package: reel; tape Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP100CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 111V Max. forward impulse current: 112A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 0.1kV Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP100CA/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; reel,tape Mounting: SMD Breakdown voltage: 111V Max. forward impulse current: 112A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 0.1kV Kind of package: reel; tape Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP100CAE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 111V; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 111V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 0.1kV Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP10A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 11.1V; 1.06kA; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 11.1V Max. forward impulse current: 1.06kA Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 10V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP10A/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 11.1V; automotive industry; Ch: 1; reel,tape Mounting: SMD Breakdown voltage: 11.1V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Application: automotive industry Max. off-state voltage: 10V Kind of package: reel; tape Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP10AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 11.1V; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 11.1V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 10V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP10AE3/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 11.1V; automotive industry; Ch: 1; reel,tape Mounting: SMD Breakdown voltage: 11.1V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Application: automotive industry Max. off-state voltage: 10V Kind of package: reel; tape Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP10CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 11.1V; 1.06kA; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 11.1V Max. forward impulse current: 1.06kA Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 10V Semiconductor structure: bidirectional Leakage current: 45µA Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP10CA/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 11.1V; 1.06kA; bidirectional; Ch: 1; reel,tape Mounting: SMD Breakdown voltage: 11.1V Max. forward impulse current: 1.06kA Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 10V Kind of package: reel; tape Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP10CAE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 11.1V; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 11.1V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 10V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP110A | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 122V; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 122V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 110V Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP110AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 122V; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 122V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 110V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP110CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 122V; 102A; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 122V Max. forward impulse current: 102A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 110V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP110CAE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 122V; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 122V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 110V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP11A | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 12.2V; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 12.2V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 11V Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP11A/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 12.2V; automotive industry; Ch: 1; reel,tape Mounting: SMD Breakdown voltage: 12.2V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Application: automotive industry Max. off-state voltage: 11V Kind of package: reel; tape Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP11AE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 12.2V; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 12.2V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 11V Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP11AE3/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 12.2V; automotive industry; Ch: 1; reel,tape Mounting: SMD Breakdown voltage: 12.2V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Application: automotive industry Max. off-state voltage: 11V Kind of package: reel; tape Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP11CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 12.2V; 989A; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 12.2V Max. forward impulse current: 989A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 11V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP11CAE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 12.2V; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 12.2V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 11V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP120A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 133V; 94A; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 133V Max. forward impulse current: 94A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 120V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP120A/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 133V; automotive industry; Ch: 1; reel,tape Mounting: SMD Breakdown voltage: 133V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Application: automotive industry Max. off-state voltage: 120V Kind of package: reel; tape Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP120AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 133V; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 133V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 120V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP120CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 133V; 94A; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 133V Max. forward impulse current: 94A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 120V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP120CAE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 133V; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 133V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 120V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP12A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 13.3V; 909A; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 13.3V Max. forward impulse current: 909A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 12V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP12AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 13.3V; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 13.3V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 12V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP12AE3/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 13.3V; Ch: 1; reel,tape; -55÷150°C Mounting: SMD Breakdown voltage: 13.3V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 12V Kind of package: reel; tape Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP12CAE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 13.3V; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 13.3V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 12V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP130A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 144V; 87A; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 144V Max. forward impulse current: 87A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 130V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP130AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 144V; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 144V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 130V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP130CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 144V; 87A; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 144V Max. forward impulse current: 87A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 130V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP13A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 14.4V; unidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 14.4V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 13V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP13A/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 14.4V; Ch: 1; reel,tape; -55÷150°C Mounting: SMD Breakdown voltage: 14.4V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 13V Kind of package: reel; tape Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP13CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 14.4V; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 14.4V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 13V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MPLAD18KP13CAE3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 14.4V; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 14.4V Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 13V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| PIC32CZ2051CA70100-V/CQB | MICROCHIP TECHNOLOGY |
Category: 32-bit PIC32 family Description: IC: PIC microcontroller; 300MHz; SMD; TFBGA129; in-tray; 2MBFLASH Mounting: SMD Number of inputs/outputs: 75 Type of integrated circuit: PIC microcontroller Operating temperature: -40...105°C Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Kind of architecture: ARM Peripherial: DMA; POR Clock frequency: 300MHz Kind of core: 32-bit Memory: 2MB FLASH Kind of package: in-tray Case: TFBGA129 Interface: EBI; EMI; Ethernet; I2C; IrDA; SPI; UART; USART; USB Supply voltage: 2.5...3.6V Manufacturer standard package: 260pcs. |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |
| PIC32CK2051GC01144-E/HQB | MICROCHIP TECHNOLOGY |
Category: 32-bit PIC32 family Description: IC: ARM microcontroller; 2MBFLASH; Features: DMA,PoR,PWM; in-tray Mounting: SMD Number of inputs/outputs: 105 Type of integrated circuit: ARM microcontroller Operating temperature: -40...125°C Integrated circuit features: DMA; PoR; PWM Kind of architecture: ARM Peripherial: DMA; POR Clock frequency: 120MHz Kind of core: 32-bit Memory: 2MB FLASH Kind of package: in-tray Interface: EBI; EMI; Ethernet; I2C; IrDA; MMC; QSPI; UART; USART; USB Supply voltage: 1.71...3.63V Manufacturer standard package: 240pcs. |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. |
| SMAJ6.5CAe3/TR13 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.5kW; 7.22V; 35.7A; bidirectional; DO214AC,SMA; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 5000pcs.
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.5kW; 7.22V; 35.7A; bidirectional; DO214AC,SMA; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 35.7A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 5000pcs.
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TC1223-5.0VCTTR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.05A; SOT23A-5; SMD; TC1223
Type of integrated circuit: voltage regulator
Case: SOT23A-5
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: shutdown mode control input
Manufacturer standard package: 3000pcs.
Input voltage: 2.7...6V
Manufacturer series: TC1223
Output current: 50mA
Voltage drop: 85mV
Output voltage: 5V
Tolerance: ±0.5%
Kind of voltage regulator: fixed; LDO
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.05A; SOT23A-5; SMD; TC1223
Type of integrated circuit: voltage regulator
Case: SOT23A-5
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: shutdown mode control input
Manufacturer standard package: 3000pcs.
Input voltage: 2.7...6V
Manufacturer series: TC1223
Output current: 50mA
Voltage drop: 85mV
Output voltage: 5V
Tolerance: ±0.5%
Kind of voltage regulator: fixed; LDO
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| M1.5KE22A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20.9V; 49A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20.9V; 49A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| M1.5KE22Ae3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20.9V; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20.9V; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| MA1.5KE22A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20.9V; 49A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20.9V; 49A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MA1.5KE22Ae3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 20.9V; 1.5kW; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 20.9V; 1.5kW; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 20.9V
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| LAN9255/ZMX019 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet controller; full duplex,half duplex,MDI-X,SPI
Type of integrated circuit: Ethernet controller
Interface: full duplex; half duplex; MDI-X; SPI
Case: TQFP128
Ethernet category: 100Base-TX
Mounting: SMD
Integrated circuit features: MAC; PHY
Communictions protocol: IEEE 802.3; IEEE 802.3u
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Manufacturer standard package: 90pcs.
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet controller; full duplex,half duplex,MDI-X,SPI
Type of integrated circuit: Ethernet controller
Interface: full duplex; half duplex; MDI-X; SPI
Case: TQFP128
Ethernet category: 100Base-TX
Mounting: SMD
Integrated circuit features: MAC; PHY
Communictions protocol: IEEE 802.3; IEEE 802.3u
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Manufacturer standard package: 90pcs.
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.
| LAN9255/ZMX020 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet controller; full duplex,half duplex,MDI-X,SPI
Type of integrated circuit: Ethernet controller
Interface: full duplex; half duplex; MDI-X; SPI
Case: TQFP128
Ethernet category: 100Base-TX
Mounting: SMD
Integrated circuit features: MAC; PHY
Communictions protocol: IEEE 802.3; IEEE 802.3u
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Manufacturer standard package: 90pcs.
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet controller; full duplex,half duplex,MDI-X,SPI
Type of integrated circuit: Ethernet controller
Interface: full duplex; half duplex; MDI-X; SPI
Case: TQFP128
Ethernet category: 100Base-TX
Mounting: SMD
Integrated circuit features: MAC; PHY
Communictions protocol: IEEE 802.3; IEEE 802.3u
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Manufacturer standard package: 90pcs.
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.
| 1N5935D |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT Zener diodes
Description: Diode: Zener; 1.25W; 27V; DO41; 1uA; Ufmax: 1.2V
Type of diode: Zener
Mounting: THT
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 1µA
Zener voltage: 27V
Tolerance: ±1%
Power dissipation: 1.25W
Category: THT Zener diodes
Description: Diode: Zener; 1.25W; 27V; DO41; 1uA; Ufmax: 1.2V
Type of diode: Zener
Mounting: THT
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 1µA
Zener voltage: 27V
Tolerance: ±1%
Power dissipation: 1.25W
товару немає в наявності
Мінімальне замовлення: 114 шт
В кошику
од. на суму грн.
| 1N5935DG |
Виробник: MICROCHIP TECHNOLOGY
Category: THT Zener diodes
Description: Diode: Zener; 1.25W; 27V; DO41; 1uA; Ufmax: 1.2V
Type of diode: Zener
Mounting: THT
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 1µA
Zener voltage: 27V
Tolerance: ±1%
Power dissipation: 1.25W
Category: THT Zener diodes
Description: Diode: Zener; 1.25W; 27V; DO41; 1uA; Ufmax: 1.2V
Type of diode: Zener
Mounting: THT
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 1µA
Zener voltage: 27V
Tolerance: ±1%
Power dissipation: 1.25W
товару немає в наявності
Мінімальне замовлення: 114 шт
В кошику
од. на суму грн.
| 1N5939D |
Виробник: MICROCHIP TECHNOLOGY
Category: THT Zener diodes
Description: Diode: Zener; 1.25W; 39V; DO41; 1uA; Ufmax: 1.2V
Case: DO41
Mounting: THT
Tolerance: ±1%
Leakage current: 1µA
Zener voltage: 39V
Type of diode: Zener
Max. forward voltage: 1.2V
Power dissipation: 1.25W
Category: THT Zener diodes
Description: Diode: Zener; 1.25W; 39V; DO41; 1uA; Ufmax: 1.2V
Case: DO41
Mounting: THT
Tolerance: ±1%
Leakage current: 1µA
Zener voltage: 39V
Type of diode: Zener
Max. forward voltage: 1.2V
Power dissipation: 1.25W
товару немає в наявності
Мінімальне замовлення: 114 шт
В кошику
од. на суму грн.
| 1N5939DG |
Виробник: MICROCHIP TECHNOLOGY
Category: THT Zener diodes
Description: Diode: Zener; 1.25W; 39V; DO41; 1uA; Ufmax: 1.2V
Case: DO41
Mounting: THT
Tolerance: ±1%
Leakage current: 1µA
Zener voltage: 39V
Type of diode: Zener
Max. forward voltage: 1.2V
Power dissipation: 1.25W
Category: THT Zener diodes
Description: Diode: Zener; 1.25W; 39V; DO41; 1uA; Ufmax: 1.2V
Case: DO41
Mounting: THT
Tolerance: ±1%
Leakage current: 1µA
Zener voltage: 39V
Type of diode: Zener
Max. forward voltage: 1.2V
Power dissipation: 1.25W
товару немає в наявності
Мінімальне замовлення: 114 шт
В кошику
од. на суму грн.
| ATTINY28V-1MU |
|
Виробник: MICROCHIP TECHNOLOGY
Category: 8-bit AVR family
Description: IC: AVR microcontroller; ATTINY; VQFN32; 1.8÷5.5VDC; Ext.inter: 10
Type of integrated circuit: AVR microcontroller
Family: ATTINY
Case: VQFN32
Clock frequency: 4MHz
Number of inputs/outputs: 19/11
Number of 8bit timers: 1
Mounting: SMD
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Operating frequency: 1.2MHz
Number of external interrupts: 10
Memory: 32B SRAM; 2kB FLASH
Number of comparators: 1
Integrated circuit features: PoR; watchdog
Kind of package: in-tray
Terminal pitch: 0.5mm
Manufacturer standard package: 490pcs.
Kind of core: 8-bit
Category: 8-bit AVR family
Description: IC: AVR microcontroller; ATTINY; VQFN32; 1.8÷5.5VDC; Ext.inter: 10
Type of integrated circuit: AVR microcontroller
Family: ATTINY
Case: VQFN32
Clock frequency: 4MHz
Number of inputs/outputs: 19/11
Number of 8bit timers: 1
Mounting: SMD
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Operating frequency: 1.2MHz
Number of external interrupts: 10
Memory: 32B SRAM; 2kB FLASH
Number of comparators: 1
Integrated circuit features: PoR; watchdog
Kind of package: in-tray
Terminal pitch: 0.5mm
Manufacturer standard package: 490pcs.
Kind of core: 8-bit
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| ATTINY20-UUR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: 8-bit AVR family
Description: IC: AVR microcontroller; ATTINY; WLSCP12; 1.8÷5.5VDC; Ext.inter: 8
Type of integrated circuit: AVR microcontroller
Family: ATTINY
Case: WLSCP12
Clock frequency: 12MHz
Number of inputs/outputs: 10
Number of PWM channels: 3
Number of 8bit timers: 2
Mounting: SMD
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Operating frequency: 12MHz
Number of external interrupts: 8
Interface: I2C; SPI
Memory: 128B SRAM; 2kB FLASH
Number of output compare channels: 4
Number of comparators: 1
Integrated circuit features: internal temperature sensor
Number of 10bit A/D converters: 8
Kind of package: reel; tape
Terminal pitch: 0.4mm
Manufacturer standard package: 5000pcs.
Kind of core: 8-bit
Number of input capture channels: 1
Number of 16bit timers: 1
Number of capacitive channels: 5
Category: 8-bit AVR family
Description: IC: AVR microcontroller; ATTINY; WLSCP12; 1.8÷5.5VDC; Ext.inter: 8
Type of integrated circuit: AVR microcontroller
Family: ATTINY
Case: WLSCP12
Clock frequency: 12MHz
Number of inputs/outputs: 10
Number of PWM channels: 3
Number of 8bit timers: 2
Mounting: SMD
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Operating frequency: 12MHz
Number of external interrupts: 8
Interface: I2C; SPI
Memory: 128B SRAM; 2kB FLASH
Number of output compare channels: 4
Number of comparators: 1
Integrated circuit features: internal temperature sensor
Number of 10bit A/D converters: 8
Kind of package: reel; tape
Terminal pitch: 0.4mm
Manufacturer standard package: 5000pcs.
Kind of core: 8-bit
Number of input capture channels: 1
Number of 16bit timers: 1
Number of capacitive channels: 5
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| ATTINY1614-SSF |
|
Виробник: MICROCHIP TECHNOLOGY
Category: 8-bit AVR family
Description: IC: AVR microcontroller; ATTINY; SOIC14; 2.7÷5.5VDC; Ext.inter: 12
Type of integrated circuit: AVR microcontroller
Family: ATTINY
Case: SOIC14
Clock frequency: 20MHz
Number of inputs/outputs: 12
Number of PWM channels: 6
Number of 8bit timers: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...125°C
Operating frequency: 16MHz
Number of external interrupts: 12
Interface: I2C; SPI; UART
Memory: 256B EEPROM; 2kB SRAM; 16kB FLASH
Number of comparators: 3
Integrated circuit features: CRC; picoPower mode; PTC
Number of 10bit A/D converters: 10
Kind of package: tube
Manufacturer standard package: 57pcs.
Kind of core: 8-bit
Number of input capture channels: 2
Number of 16bit timers: 3
Sampling speed: 115ksps
Number of 8bit A/D converters: 1
Manufacturer series: tinyAVR 1
Category: 8-bit AVR family
Description: IC: AVR microcontroller; ATTINY; SOIC14; 2.7÷5.5VDC; Ext.inter: 12
Type of integrated circuit: AVR microcontroller
Family: ATTINY
Case: SOIC14
Clock frequency: 20MHz
Number of inputs/outputs: 12
Number of PWM channels: 6
Number of 8bit timers: 1
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...125°C
Operating frequency: 16MHz
Number of external interrupts: 12
Interface: I2C; SPI; UART
Memory: 256B EEPROM; 2kB SRAM; 16kB FLASH
Number of comparators: 3
Integrated circuit features: CRC; picoPower mode; PTC
Number of 10bit A/D converters: 10
Kind of package: tube
Manufacturer standard package: 57pcs.
Kind of core: 8-bit
Number of input capture channels: 2
Number of 16bit timers: 3
Sampling speed: 115ksps
Number of 8bit A/D converters: 1
Manufacturer series: tinyAVR 1
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| MPLAD18KP100A |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 111V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 111V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP100A/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 111V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 111V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP100AE3/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 111V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 111V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP100CA |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 111V
Max. forward impulse current: 112A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 111V
Max. forward impulse current: 112A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP100CA/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 111V
Max. forward impulse current: 112A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 111V
Max. forward impulse current: 112A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP100CAE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 111V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 111V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP10A |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; 1.06kA; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 11.1V
Max. forward impulse current: 1.06kA
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; 1.06kA; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 11.1V
Max. forward impulse current: 1.06kA
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP10A/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 11.1V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 10V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 11.1V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 10V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP10AE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 11.1V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 11.1V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP10AE3/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 11.1V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 10V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 11.1V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 10V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP10CA |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; 1.06kA; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 11.1V
Max. forward impulse current: 1.06kA
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Leakage current: 45µA
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; 1.06kA; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 11.1V
Max. forward impulse current: 1.06kA
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Leakage current: 45µA
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP10CA/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; 1.06kA; bidirectional; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 11.1V
Max. forward impulse current: 1.06kA
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; 1.06kA; bidirectional; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 11.1V
Max. forward impulse current: 1.06kA
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP10CAE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 11.1V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 11.1V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 11.1V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 10V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP110A |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 122V; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 122V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 110V
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 122V; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 122V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 110V
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP110AE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 122V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 122V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 110V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 122V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 122V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 110V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP110CA |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 122V; 102A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 122V
Max. forward impulse current: 102A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 110V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 122V; 102A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 122V
Max. forward impulse current: 102A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 110V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP110CAE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 122V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 122V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 110V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 122V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 122V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 110V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP11A |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 11V
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 11V
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP11A/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 11V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 11V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP11AE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 11V
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 11V
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP11AE3/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 11V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 11V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP11CA |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; 989A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 12.2V
Max. forward impulse current: 989A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 11V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; 989A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 12.2V
Max. forward impulse current: 989A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 11V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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| MPLAD18KP11CAE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 11V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 12.2V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 12.2V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 11V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP120A |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; 94A; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 133V
Max. forward impulse current: 94A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 120V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; 94A; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 133V
Max. forward impulse current: 94A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 120V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP120A/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 133V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 120V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; automotive industry; Ch: 1; reel,tape
Mounting: SMD
Breakdown voltage: 133V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Application: automotive industry
Max. off-state voltage: 120V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP120AE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 133V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 120V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 133V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 120V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP120CA |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; 94A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 133V
Max. forward impulse current: 94A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; 94A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 133V
Max. forward impulse current: 94A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP120CAE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 133V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 133V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 133V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP12A |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 13.3V; 909A; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 13.3V
Max. forward impulse current: 909A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 13.3V; 909A; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 13.3V
Max. forward impulse current: 909A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP12AE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 13.3V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 13.3V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 13.3V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 13.3V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP12AE3/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 13.3V; Ch: 1; reel,tape; -55÷150°C
Mounting: SMD
Breakdown voltage: 13.3V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 12V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 13.3V; Ch: 1; reel,tape; -55÷150°C
Mounting: SMD
Breakdown voltage: 13.3V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 12V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP12CAE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 13.3V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 13.3V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 13.3V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 13.3V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP130A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 144V; 87A; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 144V
Max. forward impulse current: 87A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 130V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 144V; 87A; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 144V
Max. forward impulse current: 87A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 130V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP130AE3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 144V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 144V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 130V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 144V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 144V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 130V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP130CA |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 144V; 87A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 144V
Max. forward impulse current: 87A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 130V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 144V; 87A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 144V
Max. forward impulse current: 87A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 130V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP13A |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 14.4V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 14.4V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 13V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 14.4V; unidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 14.4V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 13V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP13A/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 14.4V; Ch: 1; reel,tape; -55÷150°C
Mounting: SMD
Breakdown voltage: 14.4V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 13V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 14.4V; Ch: 1; reel,tape; -55÷150°C
Mounting: SMD
Breakdown voltage: 14.4V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 13V
Kind of package: reel; tape
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP13CA |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 14.4V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 14.4V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 13V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 14.4V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 14.4V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 13V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MPLAD18KP13CAE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 14.4V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 14.4V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 13V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 14.4V; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 14.4V
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 13V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| PIC32CZ2051CA70100-V/CQB |
Виробник: MICROCHIP TECHNOLOGY
Category: 32-bit PIC32 family
Description: IC: PIC microcontroller; 300MHz; SMD; TFBGA129; in-tray; 2MBFLASH
Mounting: SMD
Number of inputs/outputs: 75
Type of integrated circuit: PIC microcontroller
Operating temperature: -40...105°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Kind of architecture: ARM
Peripherial: DMA; POR
Clock frequency: 300MHz
Kind of core: 32-bit
Memory: 2MB FLASH
Kind of package: in-tray
Case: TFBGA129
Interface: EBI; EMI; Ethernet; I2C; IrDA; SPI; UART; USART; USB
Supply voltage: 2.5...3.6V
Manufacturer standard package: 260pcs.
Category: 32-bit PIC32 family
Description: IC: PIC microcontroller; 300MHz; SMD; TFBGA129; in-tray; 2MBFLASH
Mounting: SMD
Number of inputs/outputs: 75
Type of integrated circuit: PIC microcontroller
Operating temperature: -40...105°C
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Kind of architecture: ARM
Peripherial: DMA; POR
Clock frequency: 300MHz
Kind of core: 32-bit
Memory: 2MB FLASH
Kind of package: in-tray
Case: TFBGA129
Interface: EBI; EMI; Ethernet; I2C; IrDA; SPI; UART; USART; USB
Supply voltage: 2.5...3.6V
Manufacturer standard package: 260pcs.
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Мінімальне замовлення: 260 шт
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| PIC32CK2051GC01144-E/HQB |
Виробник: MICROCHIP TECHNOLOGY
Category: 32-bit PIC32 family
Description: IC: ARM microcontroller; 2MBFLASH; Features: DMA,PoR,PWM; in-tray
Mounting: SMD
Number of inputs/outputs: 105
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...125°C
Integrated circuit features: DMA; PoR; PWM
Kind of architecture: ARM
Peripherial: DMA; POR
Clock frequency: 120MHz
Kind of core: 32-bit
Memory: 2MB FLASH
Kind of package: in-tray
Interface: EBI; EMI; Ethernet; I2C; IrDA; MMC; QSPI; UART; USART; USB
Supply voltage: 1.71...3.63V
Manufacturer standard package: 240pcs.
Category: 32-bit PIC32 family
Description: IC: ARM microcontroller; 2MBFLASH; Features: DMA,PoR,PWM; in-tray
Mounting: SMD
Number of inputs/outputs: 105
Type of integrated circuit: ARM microcontroller
Operating temperature: -40...125°C
Integrated circuit features: DMA; PoR; PWM
Kind of architecture: ARM
Peripherial: DMA; POR
Clock frequency: 120MHz
Kind of core: 32-bit
Memory: 2MB FLASH
Kind of package: in-tray
Interface: EBI; EMI; Ethernet; I2C; IrDA; MMC; QSPI; UART; USART; USB
Supply voltage: 1.71...3.63V
Manufacturer standard package: 240pcs.
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Мінімальне замовлення: 240 шт
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