Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (296486) > Сторінка 4941 з 4942
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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TC1271ASVCTTR | MICROCHIP TECHNOLOGY |
 Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: high Supply voltage: 1...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Threshold on-voltage: 2.93V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: manual reset Manufacturer standard package: 3000pcs. |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| TC1271ASVRCTR | MICROCHIP TECHNOLOGY |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: high Supply voltage: 1...5.5V DC Case: SOT143 Operating temperature: -40...125°C Mounting: SMD Threshold on-voltage: 2.93V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: manual reset Manufacturer standard package: 3000pcs. |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
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TC1271ATVCTTR | MICROCHIP TECHNOLOGY |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: high Supply voltage: 1...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Threshold on-voltage: 4.63V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: manual reset Manufacturer standard package: 3000pcs. |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| TC1271ATVRCTR | MICROCHIP TECHNOLOGY |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: high Supply voltage: 1...5.5V DC Case: SOT143 Operating temperature: -40...125°C Mounting: SMD Threshold on-voltage: 3.08V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: manual reset Manufacturer standard package: 3000pcs. |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
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SMCJ10AE3/TR13 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 88.2A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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MASMCJ10A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 88.2A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. |
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MASMCJ10A/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. |
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MASMCJ10Ae3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 88.2A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. |
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MASMCJ10AE3/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; DO214AB,SMC; Ch: 1; reel,tape; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 121 шт В кошику од. на суму грн. |
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MSMCJ10A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 88.2A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. |
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MSMCJ10A/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 88.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. |
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MSMCJ10AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 88.2A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
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MSMCJ10AE3/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 88.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
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CDLL4716C | MICROCHIP TECHNOLOGY |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 39V; SMD; DO213AA; 10nA Mounting: SMD Case: DO213AA Max. forward voltage: 1.1V Power dissipation: 0.5W Leakage current: 10nA Zener voltage: 39V Type of diode: Zener Tolerance: ±5% |
товару немає в наявності |
Мінімальне замовлення: 143 шт В кошику од. на суму грн. |
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CDLL4716C/TR | MICROCHIP TECHNOLOGY |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 39V; SMD; DO213AA; 10nA; reel,tape Mounting: SMD Case: DO213AA Kind of package: reel; tape Max. forward voltage: 1.1V Power dissipation: 0.5W Leakage current: 10nA Zener voltage: 39V Type of diode: Zener Tolerance: ±5% |
товару немає в наявності |
Мінімальне замовлення: 139 шт В кошику од. на суму грн. |
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MSMBG20A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; unidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Max. forward impulse current: 18.5A Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
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MSMBG20A/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; unidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 18.5A Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 700 шт В кошику од. на суму грн. |
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MSMBG20Ae3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; unidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
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MSMBG20AE3/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; DO214AA,SMB; Ch: 1; reel,tape; -65÷150°C Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 700 шт В кошику од. на суму грн. |
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MSMBG20CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; bidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Max. forward impulse current: 18.5A Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
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MSMBG20CA/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; bidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 18.5A Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 700 шт В кошику од. на суму грн. |
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MSMBG20CAe3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; bidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Max. forward impulse current: 18.5A Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
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MASMBG20CAe3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; bidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. |
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MASMBG20A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; unidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. |
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MASMBG20Ae3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; unidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: unidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. |
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MASMBG20CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 22.2V; bidirectional; DO214AA,SMB; Ch: 1 Case: DO214AA; SMB Mounting: SMD Peak pulse power dissipation: 0.6kW Operating temperature: -65...150°C Max. off-state voltage: 20V Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 Breakdown voltage: 22.2V |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. |
| AGLN020V2-QNG68 | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; in-tray Type of integrated circuit: FPGA Case: QFN68 Mounting: SMD Kind of package: in-tray Supply voltage: 1.14...1.575V Number of inputs/outputs: 49 Number of macrocells: 520 |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |
| AGLN020V2-QNG68I | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; in-tray Type of integrated circuit: FPGA Case: QFN68 Mounting: SMD Kind of package: in-tray Supply voltage: 1.14...1.575V Number of inputs/outputs: 49 Number of macrocells: 520 |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |
| A3P030-1QNG68 | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 768; I/O: 49; 272MHz Type of integrated circuit: FPGA Case: QFN68 Memory: 1kB FLASH Mounting: SMD Quiescent current: 10mA Kind of package: in-tray Frequency: 272MHz Supply voltage: 1.425...1.575V DC Number of inputs/outputs: 49 Number of gates: 30k Number of macrocells: 768 |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | |
| A3P030-2QNG68 | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 768; I/O: 49; 310MHz Type of integrated circuit: FPGA Case: QFN68 Memory: 1kB FLASH Mounting: SMD Quiescent current: 10mA Kind of package: in-tray Frequency: 310MHz Supply voltage: 1.425...1.575V DC Number of inputs/outputs: 49 Number of gates: 30k Number of macrocells: 768 |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | |
| A3P030-2QNG68I | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 768; I/O: 49; 310MHz Type of integrated circuit: FPGA Case: QFN68 Memory: 1kB FLASH Mounting: SMD Quiescent current: 15mA Kind of package: in-tray Frequency: 310MHz Supply voltage: 1.425...1.575V DC Number of inputs/outputs: 49 Operating temperature: -40...100°C Number of gates: 30k Number of macrocells: 768 |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |
| A3PN020-1QNG68 | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 272MHz Type of integrated circuit: FPGA Case: QFN68 Memory: 1kB FLASH Mounting: SMD Quiescent current: 5mA Kind of package: in-tray Frequency: 272MHz Supply voltage: 1.425...1.575V DC Number of inputs/outputs: 49 Number of gates: 20k Number of macrocells: 520 |
товару немає в наявності |
В кошику од. на суму грн. | |
| A3PN020-1QNG68I | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 272MHz Type of integrated circuit: FPGA Case: QFN68 Memory: 1kB FLASH Mounting: SMD Quiescent current: 8mA Kind of package: in-tray Frequency: 272MHz Supply voltage: 1.425...1.575V DC Number of inputs/outputs: 49 Operating temperature: -40...100°C Number of gates: 20k Number of macrocells: 520 |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | |
| A3PN020-2QNG68 | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 310MHz Type of integrated circuit: FPGA Case: QFN68 Memory: 1kB FLASH Mounting: SMD Quiescent current: 5mA Kind of package: in-tray Frequency: 310MHz Supply voltage: 1.425...1.575V DC Number of inputs/outputs: 49 Number of gates: 20k Number of macrocells: 520 |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | |
| A3PN020-2QNG68I | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 310MHz Type of integrated circuit: FPGA Case: QFN68 Memory: 1kB FLASH Mounting: SMD Quiescent current: 8mA Kind of package: in-tray Frequency: 310MHz Supply voltage: 1.425...1.575V DC Number of inputs/outputs: 49 Operating temperature: -40...100°C Number of gates: 20k Number of macrocells: 520 |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | |
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A3PN020-QNG68 | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; I/O: 49; in-tray; 1425÷1575mV Type of integrated circuit: FPGA Case: QFN68 Mounting: SMD Kind of package: in-tray Supply voltage: 1425...1575mV Number of inputs/outputs: 49 |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. |
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AGLN020V5-QNG68 | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; in-tray Type of integrated circuit: FPGA Case: QFN68 Mounting: SMD Kind of package: in-tray Supply voltage: 1425...1575mV Number of inputs/outputs: 49 Number of macrocells: 520 |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. |
| AGLN020V5-QNG68I | MICROCHIP TECHNOLOGY |
Category: Programmable circuits Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 250MHz Type of integrated circuit: FPGA Case: QFN68 Memory: 1kB FLASH Mounting: SMD Quiescent current: 6µA Kind of package: in-tray Frequency: 250MHz Supply voltage: 1.425...1.575V DC Number of inputs/outputs: 49 Operating temperature: -40...100°C Number of gates: 20k Number of macrocells: 520 |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |
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5KP28AE3/TR13 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 31.1V; 110A; unidirectional; P600; Ch: 1; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Case: P600 Mounting: THT Kind of package: reel; tape Operating temperature: -55...175°C Number of channels: 1 Max. forward impulse current: 110A Manufacturer standard package: 500pcs. |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| M5KP28A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 31.1V; 110A; unidirectional; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: THT Operating temperature: -65...150°C Number of channels: 1 Max. forward impulse current: 110A |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |
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M5KP28A/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 31.1V; P600; 5KP; Ch: 1; reel,tape; -55÷175°C Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Case: P600 Mounting: THT Manufacturer series: 5KP Kind of package: reel; tape Operating temperature: -55...175°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 107 шт В кошику од. на суму грн. |
| M5KP28Ae3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 31.1V; 5kW; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Mounting: THT Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |
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M5KP28AE3/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 31.1V; P600; 5KP; Ch: 1; reel,tape; -55÷175°C Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Case: P600 Mounting: THT Manufacturer series: 5KP Kind of package: reel; tape Operating temperature: -55...175°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 107 шт В кошику од. на суму грн. |
| EV23P28A | MICROCHIP TECHNOLOGY |
Category: Microchip development kits Description: Dev.kit: Microchip; Uoper: 2.7÷5.5VDC; Usup: 2.7÷5.5VDC Operating voltage: 2.7...5.5V DC Type of development kit: Microchip Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |
| M15KP28A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: THT Operating temperature: -65...150°C Number of channels: 1 Max. forward impulse current: 316A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| M15KP28A/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; reel,tape Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: THT Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 Max. forward impulse current: 316A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| M15KP28Ae3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: THT Leakage current: 25µA Operating temperature: -65...150°C Number of channels: 1 Max. forward impulse current: 316A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| M15KP28AE3/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; reel,tape Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: THT Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 Max. forward impulse current: 316A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MA15KP28A/TR | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 15kW; 31.1V; Ch: 1; reel,tape; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Mounting: THT Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MA15KP28A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: THT Operating temperature: -65...150°C Number of channels: 1 Max. forward impulse current: 316A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| MDA3KP28A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: SMD Manufacturer series: MDA Operating temperature: -55...150°C Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| MDA3KP28Ae3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: SMD Manufacturer series: MDA Operating temperature: -55...150°C Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| MADA3KP28Ae3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.1V; Ch: 8; -55÷150°C; MDA Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Mounting: SMD Manufacturer series: MDA Operating temperature: -55...150°C Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| MADA3KP28A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: SMD Manufacturer series: MDA Operating temperature: -55...150°C Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| MXDA3KP28A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: SMD Manufacturer series: MDA Operating temperature: -55...150°C Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| MXDA3KP28Ae3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Semiconductor structure: unidirectional Mounting: SMD Manufacturer series: MDA Operating temperature: -55...150°C Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| MDA3KP26A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C Semiconductor structure: unidirectional Max. off-state voltage: 26V Peak pulse power dissipation: 3kW Operating temperature: -55...150°C Type of diode: TVS Number of channels: 8 Mounting: SMD Breakdown voltage: 28.9V Manufacturer series: MDA |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| MDA3KP26Ae3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C Semiconductor structure: unidirectional Max. off-state voltage: 26V Peak pulse power dissipation: 3kW Operating temperature: -55...150°C Type of diode: TVS Number of channels: 8 Mounting: SMD Breakdown voltage: 28.9V Manufacturer series: MDA |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| MADA3KP26A | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C Semiconductor structure: unidirectional Max. off-state voltage: 26V Peak pulse power dissipation: 3kW Operating temperature: -55...150°C Type of diode: TVS Number of channels: 8 Mounting: SMD Breakdown voltage: 28.9V Manufacturer series: MDA |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |
| MADA3KP26AE3 | MICROCHIP TECHNOLOGY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C Semiconductor structure: unidirectional Max. off-state voltage: 26V Peak pulse power dissipation: 3kW Operating temperature: -55...150°C Type of diode: TVS Number of channels: 8 Mounting: SMD Breakdown voltage: 28.9V Manufacturer series: MDA |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| TC1271ASVCTTR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset
Manufacturer standard package: 3000pcs.
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset
Manufacturer standard package: 3000pcs.
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC1271ASVRCTR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1...5.5V DC
Case: SOT143
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset
Manufacturer standard package: 3000pcs.
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1...5.5V DC
Case: SOT143
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset
Manufacturer standard package: 3000pcs.
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC1271ATVCTTR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset
Manufacturer standard package: 3000pcs.
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset
Manufacturer standard package: 3000pcs.
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC1271ATVRCTR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1...5.5V DC
Case: SOT143
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset
Manufacturer standard package: 3000pcs.
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1...5.5V DC
Case: SOT143
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 3.08V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: manual reset
Manufacturer standard package: 3000pcs.
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMCJ10AE3/TR13 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MASMCJ10A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MASMCJ10A/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MASMCJ10Ae3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MASMCJ10AE3/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; DO214AB,SMC; Ch: 1; reel,tape; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; DO214AB,SMC; Ch: 1; reel,tape; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 121 шт
В кошику
од. на суму грн.
| MSMCJ10A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| MSMCJ10A/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| MSMCJ10AE3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| MSMCJ10AE3/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 600 шт
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од. на суму грн.
| CDLL4716C |
Виробник: MICROCHIP TECHNOLOGY
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 39V; SMD; DO213AA; 10nA
Mounting: SMD
Case: DO213AA
Max. forward voltage: 1.1V
Power dissipation: 0.5W
Leakage current: 10nA
Zener voltage: 39V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 39V; SMD; DO213AA; 10nA
Mounting: SMD
Case: DO213AA
Max. forward voltage: 1.1V
Power dissipation: 0.5W
Leakage current: 10nA
Zener voltage: 39V
Type of diode: Zener
Tolerance: ±5%
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Мінімальне замовлення: 143 шт
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| CDLL4716C/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 39V; SMD; DO213AA; 10nA; reel,tape
Mounting: SMD
Case: DO213AA
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.5W
Leakage current: 10nA
Zener voltage: 39V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 39V; SMD; DO213AA; 10nA; reel,tape
Mounting: SMD
Case: DO213AA
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.5W
Leakage current: 10nA
Zener voltage: 39V
Type of diode: Zener
Tolerance: ±5%
товару немає в наявності
Мінімальне замовлення: 139 шт
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| MSMBG20A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.
| MSMBG20A/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 700 шт
В кошику
од. на суму грн.
| MSMBG20Ae3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MSMBG20AE3/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; DO214AA,SMB; Ch: 1; reel,tape; -65÷150°C
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; DO214AA,SMB; Ch: 1; reel,tape; -65÷150°C
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 700 шт
В кошику
од. на суму грн.
| MSMBG20CA |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.
| MSMBG20CA/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 700 шт
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од. на суму грн.
| MSMBG20CAe3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; 18.5A; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Max. forward impulse current: 18.5A
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 800 шт
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| MASMBG20CAe3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 200 шт
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од. на суму грн.
| MASMBG20A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 200 шт
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од. на суму грн.
| MASMBG20Ae3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; unidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 200 шт
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од. на суму грн.
| MASMBG20CA |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2V; bidirectional; DO214AA,SMB; Ch: 1
Case: DO214AA; SMB
Mounting: SMD
Peak pulse power dissipation: 0.6kW
Operating temperature: -65...150°C
Max. off-state voltage: 20V
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 22.2V
товару немає в наявності
Мінімальне замовлення: 200 шт
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од. на суму грн.
| AGLN020V2-QNG68 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; in-tray
Type of integrated circuit: FPGA
Case: QFN68
Mounting: SMD
Kind of package: in-tray
Supply voltage: 1.14...1.575V
Number of inputs/outputs: 49
Number of macrocells: 520
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; in-tray
Type of integrated circuit: FPGA
Case: QFN68
Mounting: SMD
Kind of package: in-tray
Supply voltage: 1.14...1.575V
Number of inputs/outputs: 49
Number of macrocells: 520
товару немає в наявності
Мінімальне замовлення: 260 шт
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од. на суму грн.
| AGLN020V2-QNG68I |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; in-tray
Type of integrated circuit: FPGA
Case: QFN68
Mounting: SMD
Kind of package: in-tray
Supply voltage: 1.14...1.575V
Number of inputs/outputs: 49
Number of macrocells: 520
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; in-tray
Type of integrated circuit: FPGA
Case: QFN68
Mounting: SMD
Kind of package: in-tray
Supply voltage: 1.14...1.575V
Number of inputs/outputs: 49
Number of macrocells: 520
товару немає в наявності
Мінімальне замовлення: 260 шт
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од. на суму грн.
| A3P030-1QNG68 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 768; I/O: 49; 272MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 10mA
Kind of package: in-tray
Frequency: 272MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Number of gates: 30k
Number of macrocells: 768
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 768; I/O: 49; 272MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 10mA
Kind of package: in-tray
Frequency: 272MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Number of gates: 30k
Number of macrocells: 768
товару немає в наявності
Мінімальне замовлення: 520 шт
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од. на суму грн.
| A3P030-2QNG68 |
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 768; I/O: 49; 310MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 10mA
Kind of package: in-tray
Frequency: 310MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Number of gates: 30k
Number of macrocells: 768
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 768; I/O: 49; 310MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 10mA
Kind of package: in-tray
Frequency: 310MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Number of gates: 30k
Number of macrocells: 768
товару немає в наявності
Мінімальне замовлення: 520 шт
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од. на суму грн.
| A3P030-2QNG68I |
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 768; I/O: 49; 310MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 15mA
Kind of package: in-tray
Frequency: 310MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Operating temperature: -40...100°C
Number of gates: 30k
Number of macrocells: 768
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 768; I/O: 49; 310MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 15mA
Kind of package: in-tray
Frequency: 310MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Operating temperature: -40...100°C
Number of gates: 30k
Number of macrocells: 768
товару немає в наявності
Мінімальне замовлення: 260 шт
В кошику
од. на суму грн.
| A3PN020-1QNG68 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 272MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 5mA
Kind of package: in-tray
Frequency: 272MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Number of gates: 20k
Number of macrocells: 520
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 272MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 5mA
Kind of package: in-tray
Frequency: 272MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Number of gates: 20k
Number of macrocells: 520
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В кошику
од. на суму грн.
| A3PN020-1QNG68I |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 272MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 8mA
Kind of package: in-tray
Frequency: 272MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Operating temperature: -40...100°C
Number of gates: 20k
Number of macrocells: 520
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 272MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 8mA
Kind of package: in-tray
Frequency: 272MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Operating temperature: -40...100°C
Number of gates: 20k
Number of macrocells: 520
товару немає в наявності
Мінімальне замовлення: 520 шт
В кошику
од. на суму грн.
| A3PN020-2QNG68 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 310MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 5mA
Kind of package: in-tray
Frequency: 310MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Number of gates: 20k
Number of macrocells: 520
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 310MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 5mA
Kind of package: in-tray
Frequency: 310MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Number of gates: 20k
Number of macrocells: 520
товару немає в наявності
Мінімальне замовлення: 520 шт
В кошику
од. на суму грн.
| A3PN020-2QNG68I |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 310MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 8mA
Kind of package: in-tray
Frequency: 310MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Operating temperature: -40...100°C
Number of gates: 20k
Number of macrocells: 520
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 310MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 8mA
Kind of package: in-tray
Frequency: 310MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Operating temperature: -40...100°C
Number of gates: 20k
Number of macrocells: 520
товару немає в наявності
Мінімальне замовлення: 520 шт
В кошику
од. на суму грн.
| A3PN020-QNG68 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; I/O: 49; in-tray; 1425÷1575mV
Type of integrated circuit: FPGA
Case: QFN68
Mounting: SMD
Kind of package: in-tray
Supply voltage: 1425...1575mV
Number of inputs/outputs: 49
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; I/O: 49; in-tray; 1425÷1575mV
Type of integrated circuit: FPGA
Case: QFN68
Mounting: SMD
Kind of package: in-tray
Supply voltage: 1425...1575mV
Number of inputs/outputs: 49
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Мінімальне замовлення: 260 шт
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| AGLN020V5-QNG68 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; in-tray
Type of integrated circuit: FPGA
Case: QFN68
Mounting: SMD
Kind of package: in-tray
Supply voltage: 1425...1575mV
Number of inputs/outputs: 49
Number of macrocells: 520
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; in-tray
Type of integrated circuit: FPGA
Case: QFN68
Mounting: SMD
Kind of package: in-tray
Supply voltage: 1425...1575mV
Number of inputs/outputs: 49
Number of macrocells: 520
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Мінімальне замовлення: 260 шт
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| AGLN020V5-QNG68I |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 250MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 6µA
Kind of package: in-tray
Frequency: 250MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Operating temperature: -40...100°C
Number of gates: 20k
Number of macrocells: 520
Category: Programmable circuits
Description: IC: FPGA; SMD; QFN68; Number of macrocells: 520; I/O: 49; 250MHz
Type of integrated circuit: FPGA
Case: QFN68
Memory: 1kB FLASH
Mounting: SMD
Quiescent current: 6µA
Kind of package: in-tray
Frequency: 250MHz
Supply voltage: 1.425...1.575V DC
Number of inputs/outputs: 49
Operating temperature: -40...100°C
Number of gates: 20k
Number of macrocells: 520
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Мінімальне замовлення: 260 шт
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| 5KP28AE3/TR13 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 31.1V; 110A; unidirectional; P600; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Kind of package: reel; tape
Operating temperature: -55...175°C
Number of channels: 1
Max. forward impulse current: 110A
Manufacturer standard package: 500pcs.
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 31.1V; 110A; unidirectional; P600; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Kind of package: reel; tape
Operating temperature: -55...175°C
Number of channels: 1
Max. forward impulse current: 110A
Manufacturer standard package: 500pcs.
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Мінімальне замовлення: 500 шт
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| M5KP28A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 31.1V; 110A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 110A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 31.1V; 110A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 110A
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Мінімальне замовлення: 200 шт
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| M5KP28A/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 31.1V; P600; 5KP; Ch: 1; reel,tape; -55÷175°C
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Case: P600
Mounting: THT
Manufacturer series: 5KP
Kind of package: reel; tape
Operating temperature: -55...175°C
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 31.1V; P600; 5KP; Ch: 1; reel,tape; -55÷175°C
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Case: P600
Mounting: THT
Manufacturer series: 5KP
Kind of package: reel; tape
Operating temperature: -55...175°C
Number of channels: 1
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Мінімальне замовлення: 107 шт
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| M5KP28Ae3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 31.1V; 5kW; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 31.1V; 5kW; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 200 шт
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| M5KP28AE3/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 31.1V; P600; 5KP; Ch: 1; reel,tape; -55÷175°C
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Case: P600
Mounting: THT
Manufacturer series: 5KP
Kind of package: reel; tape
Operating temperature: -55...175°C
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 31.1V; P600; 5KP; Ch: 1; reel,tape; -55÷175°C
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Case: P600
Mounting: THT
Manufacturer series: 5KP
Kind of package: reel; tape
Operating temperature: -55...175°C
Number of channels: 1
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Мінімальне замовлення: 107 шт
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| EV23P28A |
Виробник: MICROCHIP TECHNOLOGY
Category: Microchip development kits
Description: Dev.kit: Microchip; Uoper: 2.7÷5.5VDC; Usup: 2.7÷5.5VDC
Operating voltage: 2.7...5.5V DC
Type of development kit: Microchip
Supply voltage: 2.7...5.5V DC
Category: Microchip development kits
Description: Dev.kit: Microchip; Uoper: 2.7÷5.5VDC; Usup: 2.7÷5.5VDC
Operating voltage: 2.7...5.5V DC
Type of development kit: Microchip
Supply voltage: 2.7...5.5V DC
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| M15KP28A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
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Мінімальне замовлення: 100 шт
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| M15KP28A/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
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Мінімальне замовлення: 100 шт
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| M15KP28Ae3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Leakage current: 25µA
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Leakage current: 25µA
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
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Мінімальне замовлення: 100 шт
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| M15KP28AE3/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
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Мінімальне замовлення: 100 шт
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| MA15KP28A/TR |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; Ch: 1; reel,tape; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Mounting: THT
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; Ch: 1; reel,tape; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Mounting: THT
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 100 шт
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| MA15KP28A |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 15kW; 31.1V; 316A; unidirectional; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Max. forward impulse current: 316A
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Мінімальне замовлення: 100 шт
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| MDA3KP28A |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
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Мінімальне замовлення: 500 шт
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| MDA3KP28Ae3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
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Мінімальне замовлення: 500 шт
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| MADA3KP28Ae3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; Ch: 8; -55÷150°C; MDA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; Ch: 8; -55÷150°C; MDA
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
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Мінімальне замовлення: 500 шт
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| MADA3KP28A |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
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Мінімальне замовлення: 500 шт
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| MXDA3KP28A |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
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Мінімальне замовлення: 500 шт
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| MXDA3KP28Ae3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1V; unidirectional; Ch: 8; MDA; -55÷150°C
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Semiconductor structure: unidirectional
Mounting: SMD
Manufacturer series: MDA
Operating temperature: -55...150°C
Number of channels: 8
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Мінімальне замовлення: 500 шт
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| MDA3KP26A |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C
Semiconductor structure: unidirectional
Max. off-state voltage: 26V
Peak pulse power dissipation: 3kW
Operating temperature: -55...150°C
Type of diode: TVS
Number of channels: 8
Mounting: SMD
Breakdown voltage: 28.9V
Manufacturer series: MDA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C
Semiconductor structure: unidirectional
Max. off-state voltage: 26V
Peak pulse power dissipation: 3kW
Operating temperature: -55...150°C
Type of diode: TVS
Number of channels: 8
Mounting: SMD
Breakdown voltage: 28.9V
Manufacturer series: MDA
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Мінімальне замовлення: 500 шт
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| MDA3KP26Ae3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C
Semiconductor structure: unidirectional
Max. off-state voltage: 26V
Peak pulse power dissipation: 3kW
Operating temperature: -55...150°C
Type of diode: TVS
Number of channels: 8
Mounting: SMD
Breakdown voltage: 28.9V
Manufacturer series: MDA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C
Semiconductor structure: unidirectional
Max. off-state voltage: 26V
Peak pulse power dissipation: 3kW
Operating temperature: -55...150°C
Type of diode: TVS
Number of channels: 8
Mounting: SMD
Breakdown voltage: 28.9V
Manufacturer series: MDA
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Мінімальне замовлення: 500 шт
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| MADA3KP26A |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C
Semiconductor structure: unidirectional
Max. off-state voltage: 26V
Peak pulse power dissipation: 3kW
Operating temperature: -55...150°C
Type of diode: TVS
Number of channels: 8
Mounting: SMD
Breakdown voltage: 28.9V
Manufacturer series: MDA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C
Semiconductor structure: unidirectional
Max. off-state voltage: 26V
Peak pulse power dissipation: 3kW
Operating temperature: -55...150°C
Type of diode: TVS
Number of channels: 8
Mounting: SMD
Breakdown voltage: 28.9V
Manufacturer series: MDA
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Мінімальне замовлення: 500 шт
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| MADA3KP26AE3 |
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C
Semiconductor structure: unidirectional
Max. off-state voltage: 26V
Peak pulse power dissipation: 3kW
Operating temperature: -55...150°C
Type of diode: TVS
Number of channels: 8
Mounting: SMD
Breakdown voltage: 28.9V
Manufacturer series: MDA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 28.9V; unidirectional; Ch: 8; MDA; -55÷150°C
Semiconductor structure: unidirectional
Max. off-state voltage: 26V
Peak pulse power dissipation: 3kW
Operating temperature: -55...150°C
Type of diode: TVS
Number of channels: 8
Mounting: SMD
Breakdown voltage: 28.9V
Manufacturer series: MDA
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Мінімальне замовлення: 500 шт
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