Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (342213) > Сторінка 761 з 5704
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SMDB03e3/TR13 | Microchip Technology |
 Description: TVS DIODE 3.3VWM 9VC 8-SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 600pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 8-SO Unidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMDB05/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 11VC 8-SO |
товару немає в наявності |
В кошику од. на суму грн. |
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SMDB05C/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 11VC 8-SO |
товару немає в наявності |
В кошику од. на суму грн. |
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SMDB05Ce3/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 11VC 8-SO |
товару немає в наявності |
В кошику од. на суму грн. |
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SMDB12/TR13 | Microchip Technology |
Description: TVS DIODE 12VWM 19VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 185pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: 8-SOIC Unidirectional Channels: 4 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMDB12C/TR13 | Microchip Technology |
Description: TVS DIODE 12VWM 19VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 95pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: 8-SOIC Bidirectional Channels: 4 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMDB12CE3/TR13 | Microchip Technology |
Description: TVS DIODE 12VWM 19VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 95pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: 8-SOIC Bidirectional Channels: 4 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMDB12e3/TR13 | Microchip Technology |
Description: TVS DIODE 12VWM 19VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 185pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: 8-SOIC Unidirectional Channels: 4 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ18Ce3/TR13 | Microchip Technology |
Description: TVS DIODE 18VWM 32.2VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 93.2A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-214AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 32.2V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ18e3/TR13 | Microchip Technology |
Description: TVS DIODE 18VWM 32.2VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 93.2A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 32.2V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ20CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 20VWM 32.4VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 92.6A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
.jpg "SMLJ24AE3/TR13") |
SMLJ24AE3/TR13 | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 77.2A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ24CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 77.2A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-214AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
.jpg "SMLJ24Ce3/TR13") |
SMLJ24Ce3/TR13 | Microchip Technology |
Description: TVS DIODE 24VWM 43VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ24e3/TR13 | Microchip Technology |
Description: TVS DIODE 24VWM 43VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ26CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 26VWM 42.1VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71.2A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 300W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ30AE3/TR13 | Microchip Technology |
Description: TVS DIODE 30VWM 48.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ30e3/TR13 | Microchip Technology |
Description: TVS DIODE 30VWM 53.5VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 56A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 53.5V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ33AE3/TR13 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ36AE3/TR13 | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 51.6A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ40AE3/TR13 | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 46.4A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ45Ae3/TR13 | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ45CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ45e3/TR13 | Microchip Technology |
Description: TVS DIODE 45VWM 80.3VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ48AE3/TR13 | Microchip Technology |
Description: TVS DIODE 48VWM 77.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ6.0CAe3/TR13 | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ6.0Ce3/TR13 | Microchip Technology |
Description: TVS DIODE 6VWM 11.4VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 263.2A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 11.4V Power - Peak Pulse: 300W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ6.0e3/TR13 | Microchip Technology |
Description: TVS DIODE 6VWM 11.4VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 263.2A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 11.4V Power - Peak Pulse: 300W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ6.5Ae3/TR13 | Microchip Technology |
Description: TVS DIODE 6.5V 11.2V DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ6.5e3/TR13 | Microchip Technology |
Description: TVS DIODE 6.5VWM 12.3VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ78AE3/TR13 | Microchip Technology |
Description: TVS DIODE 78VWM 126VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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SMLJ78CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 78VWM 126VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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UFS150Je3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 500V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 500 V |
товару немає в наявності |
В кошику од. на суму грн. |
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UFS160JE3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 600V 1A DO214BA |
товару немає в наявності |
В кошику од. на суму грн. |
| UFS305G/TR13 | Microchip Technology |
Description: DIODE GEN PURP 50V 3A DO215AB Packaging: Tape & Reel (TR) Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| UFS305Ge3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 50V 3A DO215AB Packaging: Tape & Reel (TR) Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| UFS310G/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 3A DO215AB Packaging: Tape & Reel (TR) Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| UFS310Ge3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 3A DO215AB Packaging: Tape & Reel (TR) Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |
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UFS310J/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
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UFS310Je3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
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UFS315J/TR13 | Microchip Technology |
Description: DIODE GEN PURP 150V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
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UFS315JE3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 150V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
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UFS380Je3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 800V 3A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
| UFS510G/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 5A DO215AB Packaging: Tape & Reel (TR) Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| UFS510Ge3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 5A DO215AB Packaging: Tape & Reel (TR) Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |
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UFS510J/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
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UFS510Je3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
| UFS540G/TR13 | Microchip Technology |
Description: DIODE GEN PURP 400V 5A DO215AB |
товару немає в наявності |
В кошику од. на суму грн. | |
| UFS540Ge3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 400V 5A DO215AB |
товару немає в наявності |
В кошику од. на суму грн. | |
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UFS540J/TR13 | Microchip Technology |
Description: DIODE GEN PURP 400V 5A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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UFS540Je3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 400V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. |
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UPR10e3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 2.5A DO216 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
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 |
UPR30e3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 300V 2A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
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В кошику од. на суму грн. |
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UPR5/TR13 | Microchip Technology |
Description: DIODE GEN PURP 50V 2.5A DO216 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
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В кошику од. на суму грн. |
|
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UPR5e3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 50V 2.5A DO216 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
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В кошику од. на суму грн. |
|
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UPR60/TR13 | Microchip Technology |
Description: DIODE GEN PURP 600V 2A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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В кошику од. на суму грн. |
|
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UPR60e3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 600V 2A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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В кошику од. на суму грн. |
| UPS10100/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 10A 100V PWRMITE Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |
| UPS10100e3/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 10A 100V PWRMITE Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | |
|
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UPS120/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V |
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В кошику од. на суму грн. |
| SMDB03e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 600pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 9VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 600pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SO
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
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| SMDB05/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 11VC 8-SO
Description: TVS DIODE 5VWM 11VC 8-SO
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В кошику
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| SMDB05C/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 11VC 8-SO
Description: TVS DIODE 5VWM 11VC 8-SO
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В кошику
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| SMDB05Ce3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 11VC 8-SO
Description: TVS DIODE 5VWM 11VC 8-SO
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В кошику
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| SMDB12/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 19VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 185pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 12VWM 19VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 185pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMDB12C/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 19VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 95pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 12VWM 19VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 95pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMDB12CE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 19VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 95pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 12VWM 19VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 95pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Bidirectional Channels: 4
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMDB12e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 19VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 185pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 12VWM 19VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 185pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMLJ18Ce3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 32.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.2A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 18VWM 32.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.2A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMLJ18e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 32.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.2A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 18VWM 32.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.2A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.2V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMLJ20CAE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 92.6A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 92.6A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMLJ24AE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77.2A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77.2A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMLJ24CAE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77.2A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 77.2A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMLJ24Ce3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 43VC DO214AB
Description: TVS DIODE 24VWM 43VC DO214AB
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В кошику
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| SMLJ24e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 43VC DO214AB
Description: TVS DIODE 24VWM 43VC DO214AB
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В кошику
од. на суму грн.
| SMLJ26CAE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
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В кошику
од. на суму грн.
| SMLJ30AE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC DO214AB
Description: TVS DIODE 30VWM 48.4VC DO214AB
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В кошику
од. на суму грн.
| SMLJ30e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 53.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 53.5V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 30VWM 53.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 53.5V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMLJ33AE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AB
Description: TVS DIODE 33VWM 53.3VC DO214AB
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В кошику
од. на суму грн.
| SMLJ36AE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
од. на суму грн.
| SMLJ40AE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
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| SMLJ45Ae3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
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В кошику
од. на суму грн.
| SMLJ45CAE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
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В кошику
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| SMLJ45e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 80.3VC DO214AB
Description: TVS DIODE 45VWM 80.3VC DO214AB
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В кошику
од. на суму грн.
| SMLJ48AE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 77.4VC DO214AB
Description: TVS DIODE 48VWM 77.4VC DO214AB
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В кошику
од. на суму грн.
| SMLJ6.0CAe3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO214AB
Description: TVS DIODE 6VWM 10.3VC DO214AB
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В кошику
од. на суму грн.
| SMLJ6.0Ce3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 11.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 263.2A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6VWM 11.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 263.2A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
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В кошику
од. на суму грн.
| SMLJ6.0e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 11.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 263.2A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6VWM 11.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 263.2A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
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В кошику
од. на суму грн.
| SMLJ6.5Ae3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6.5V 11.2V DO214AB
Description: TVS DIODE 6.5V 11.2V DO214AB
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В кошику
од. на суму грн.
| SMLJ6.5e3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 12.3VC DO214AB
Description: TVS DIODE 6.5VWM 12.3VC DO214AB
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В кошику
од. на суму грн.
| SMLJ78AE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 126VC DO214AB
Description: TVS DIODE 78VWM 126VC DO214AB
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В кошику
од. на суму грн.
| SMLJ78CAE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 126VC DO214AB
Description: TVS DIODE 78VWM 126VC DO214AB
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В кошику
од. на суму грн.
| UFS150Je3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Description: DIODE GEN PURP 500V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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В кошику
од. на суму грн.
| UFS160JE3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 1A DO214BA
Description: DIODE GEN PURP 600V 1A DO214BA
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В кошику
од. на суму грн.
| UFS305G/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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В кошику
од. на суму грн.
| UFS305Ge3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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В кошику
од. на суму грн.
| UFS310G/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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В кошику
од. на суму грн.
| UFS310Ge3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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В кошику
од. на суму грн.
| UFS310J/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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В кошику
од. на суму грн.
| UFS310Je3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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В кошику
од. на суму грн.
| UFS315J/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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В кошику
од. на суму грн.
| UFS315JE3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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В кошику
од. на суму грн.
| UFS380Je3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A DO214AB
Description: DIODE GEN PURP 800V 3A DO214AB
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В кошику
од. на суму грн.
| UFS510G/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 5A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 5A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| UFS510Ge3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 5A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 5A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| UFS510J/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| UFS510Je3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| UFS540G/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO215AB
Description: DIODE GEN PURP 400V 5A DO215AB
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В кошику
од. на суму грн.
| UFS540Ge3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO215AB
Description: DIODE GEN PURP 400V 5A DO215AB
товару немає в наявності
В кошику
од. на суму грн.
| UFS540J/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
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| UFS540Je3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| UPR10e3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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| UPR30e3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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| UPR5/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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| UPR5e3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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| UPR60/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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| UPR60e3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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| UPS10100/TR13 |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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| UPS10100e3/TR13 |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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| UPS120/TR13 |
|
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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