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SMLJ33AE3/TR13 SMLJ33AE3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 33VWM 53.3VC DO214AB
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SMLJ36AE3/TR13 SMLJ36AE3/TR13 Microchip Technology msmlg5_j5_series_datasheet_revd.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMLJ40AE3/TR13 SMLJ40AE3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMLJ43Ae3/TR13 SMLJ43Ae3/TR13 Microchip Technology msmlg5_j5_series_datasheet_revd.pdf Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMLJ45Ae3/TR13 SMLJ45Ae3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMLJ45CAE3/TR13 SMLJ45CAE3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMLJ45e3/TR13 SMLJ45e3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 45VWM 80.3VC DO214AB
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SMLJ48AE3/TR13 SMLJ48AE3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 48VWM 77.4VC DO214AB
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SMLJ6.0CAe3/TR13 SMLJ6.0CAe3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 6VWM 10.3VC DO214AB
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SMLJ6.0Ce3/TR13 SMLJ6.0Ce3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 6VWM 11.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 263.2A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
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SMLJ6.0e3/TR13 SMLJ6.0e3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 6VWM 11.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 263.2A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
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SMLJ6.5Ae3/TR13 SMLJ6.5Ae3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 6.5V 11.2V DO214AB
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SMLJ6.5e3/TR13 SMLJ6.5e3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 6.5VWM 12.3VC DO214AB
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SMLJ78AE3/TR13 SMLJ78AE3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 78VWM 126VC DO214AB
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SMLJ78CAE3/TR13 SMLJ78CAE3/TR13 Microchip Technology 10870-sa3-47-datasheet Description: TVS DIODE 78VWM 126VC DO214AB
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UFS150Je3/TR13 UFS150Je3/TR13 Microchip Technology UFS130J-UFS150J.pdf Description: DIODE GEN PURP 500V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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UFS160JE3/TR13 UFS160JE3/TR13 Microchip Technology UFS160J-UFS180J.pdf Description: DIODE GEN PURP 600V 1A DO214BA
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UFS305G/TR13 Microchip Technology UFS305%28G%2CJ%29-UFS320%28G%2CJ%29.pdf Description: DIODE GEN PURP 50V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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UFS305Ge3/TR13 Microchip Technology UFS305%28G%2CJ%29-UFS320%28G%2CJ%29.pdf Description: DIODE GEN PURP 50V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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UFS310G/TR13 Microchip Technology UFS305(G,J)-UFS320(G,J).pdf Description: DIODE GEN PURP 100V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS310Ge3/TR13 Microchip Technology UFS305(G,J)-UFS320(G,J).pdf Description: DIODE GEN PURP 100V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS310J/TR13 UFS310J/TR13 Microchip Technology UFS305(G,J)-UFS320(G,J).pdf Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS310Je3/TR13 UFS310Je3/TR13 Microchip Technology UFS305(G,J)-UFS320(G,J).pdf Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS315J/TR13 UFS315J/TR13 Microchip Technology UFS305%28G%2CJ%29-UFS320%28G%2CJ%29.pdf Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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UFS315JE3/TR13 UFS315JE3/TR13 Microchip Technology UFS305%28G%2CJ%29-UFS320%28G%2CJ%29.pdf Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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UFS380Je3/TR13 UFS380Je3/TR13 Microchip Technology UFS360(G,J)-UFS380(G,J).pdf Description: DIODE GEN PURP 800V 3A DO214AB
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UFS510G/TR13 Microchip Technology UFS510%28G%2CJ%29-UFS520%28G%2CJ%29.pdf Description: DIODE GEN PURP 100V 5A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS510Ge3/TR13 Microchip Technology UFS510%28G%2CJ%29-UFS520%28G%2CJ%29.pdf Description: DIODE GEN PURP 100V 5A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS510J/TR13 UFS510J/TR13 Microchip Technology UFS510%28G%2CJ%29-UFS520%28G%2CJ%29.pdf Description: DIODE GEN PURP 100V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS510Je3/TR13 UFS510Je3/TR13 Microchip Technology UFS510%28G%2CJ%29-UFS520%28G%2CJ%29.pdf Description: DIODE GEN PURP 100V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS540G/TR13 Microchip Technology UFS530(G,J)-UFS550(G,J).pdf Description: DIODE GEN PURP 400V 5A DO215AB
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UFS540Ge3/TR13 Microchip Technology UFS530(G,J)-UFS550(G,J).pdf Description: DIODE GEN PURP 400V 5A DO215AB
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UFS540J/TR13 UFS540J/TR13 Microchip Technology UFS530(G,J)-UFS550(G,J).pdf Description: DIODE GEN PURP 400V 5A DO214AB
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UFS540Je3/TR13 UFS540Je3/TR13 Microchip Technology UFS530%28G%2CJ%29-UFS550%28G%2CJ%29.pdf Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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UPR10e3/TR13 UPR10e3/TR13 Microchip Technology UPR5E3, UPR10E3, UPR15E3.pdf Description: DIODE GEN PURP 100V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UPR30e3/TR13 UPR30e3/TR13 Microchip Technology UPR20-40.pdf Description: DIODE GEN PURP 300V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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UPR5/TR13 UPR5/TR13 Microchip Technology UPR5 10 15.pdf Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UPR5e3/TR13 UPR5e3/TR13 Microchip Technology UPR5 10 15.pdf Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UPR60/TR13 UPR60/TR13 Microchip Technology UPR60.pdf Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UPR60e3/TR13 UPR60e3/TR13 Microchip Technology UPR60.pdf Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UPS10100/TR13 Microchip Technology Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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UPS10100e3/TR13 Microchip Technology Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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UPS120/TR13 UPS120/TR13 Microchip Technology 11387-ups120e3-rev-e-datasheet Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120E/TR13 UPS120E/TR13 Microchip Technology 11387-ups120e3-rev-e-datasheet Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120E3/TR13 UPS120E3/TR13 Microchip Technology 11387-ups120e3-rev-e-datasheet Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120EE3/TR13 UPS120EE3/TR13 Microchip Technology UPS120Ee3.pdf Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
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UPS140/TR13 UPS140/TR13 Microchip Technology ups140.pdf Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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UPS140E3/TR13 UPS140E3/TR13 Microchip Technology ups140.pdf Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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UPS170/TR13 Microchip Technology Description: DIODE SCHOTTKY 1A 70V POWERMITE
Packaging: Tape & Reel (TR)
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UPS170e3/TR13 Microchip Technology Description: DIODE SCHOTTKY 1A 70V POWERMITE
Packaging: Tape & Reel (TR)
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UPS315/TR13 UPS315/TR13 Microchip Technology 11392-ups315-datasheet Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
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UPS315e3/TR13 UPS315e3/TR13 Microchip Technology 11392-ups315-datasheet Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
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UPS5100/TR13 UPS5100/TR13 Microchip Technology RF01314.pdf Description: DIODE SCHOTTKY 100V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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UPS540/TR13 UPS540/TR13 Microchip Technology UPS540e3.pdf Description: DIODE SCHOTTKY 40V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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UPS560/TR13 UPS560/TR13 Microchip Technology UPS560.pdf Description: DIODE SCHOTTKY 60V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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UPS5817/TR13 UPS5817/TR13 Microchip Technology 131649-rf01129.pdf Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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UPS5817e3/TR13 UPS5817e3/TR13 Microchip Technology UPS5817e3.pdf Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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UPS5819/TR13 UPS5819/TR13 Microchip Technology UPS5817%205819.pdf Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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UPS760/TR13 UPS760/TR13 Microchip Technology Description: DIODE SCHOTTKY 60V 7A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 375pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 7 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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UPT17/TR13 UPT17/TR13 Microchip Technology UPT+RF01103_Rev_B_Final-PD-000177967+%284%29.pdf Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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SMLJ33AE3/TR13 10870-sa3-47-datasheet
SMLJ33AE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AB
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SMLJ36AE3/TR13 msmlg5_j5_series_datasheet_revd.pdf
SMLJ36AE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 51.6A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMLJ40AE3/TR13 10870-sa3-47-datasheet
SMLJ40AE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMLJ43Ae3/TR13 msmlg5_j5_series_datasheet_revd.pdf
SMLJ43Ae3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMLJ45Ae3/TR13 10870-sa3-47-datasheet
SMLJ45Ae3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMLJ45CAE3/TR13 10870-sa3-47-datasheet
SMLJ45CAE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
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SMLJ45e3/TR13 10870-sa3-47-datasheet
SMLJ45e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 80.3VC DO214AB
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SMLJ48AE3/TR13 10870-sa3-47-datasheet
SMLJ48AE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 77.4VC DO214AB
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SMLJ6.0CAe3/TR13 10870-sa3-47-datasheet
SMLJ6.0CAe3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO214AB
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SMLJ6.0Ce3/TR13 10870-sa3-47-datasheet
SMLJ6.0Ce3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 11.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 263.2A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
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SMLJ6.0e3/TR13 10870-sa3-47-datasheet
SMLJ6.0e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 11.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 263.2A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 11.4V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
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SMLJ6.5Ae3/TR13 10870-sa3-47-datasheet
SMLJ6.5Ae3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 6.5V 11.2V DO214AB
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SMLJ6.5e3/TR13 10870-sa3-47-datasheet
SMLJ6.5e3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 12.3VC DO214AB
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SMLJ78AE3/TR13 10870-sa3-47-datasheet
SMLJ78AE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 126VC DO214AB
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SMLJ78CAE3/TR13 10870-sa3-47-datasheet
SMLJ78CAE3/TR13
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 126VC DO214AB
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UFS150Je3/TR13 UFS130J-UFS150J.pdf
UFS150Je3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
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UFS160JE3/TR13 UFS160J-UFS180J.pdf
UFS160JE3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 1A DO214BA
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UFS305G/TR13 UFS305%28G%2CJ%29-UFS320%28G%2CJ%29.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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UFS305Ge3/TR13 UFS305%28G%2CJ%29-UFS320%28G%2CJ%29.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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UFS310G/TR13 UFS305(G,J)-UFS320(G,J).pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS310Ge3/TR13 UFS305(G,J)-UFS320(G,J).pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS310J/TR13 UFS305(G,J)-UFS320(G,J).pdf
UFS310J/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS310Je3/TR13 UFS305(G,J)-UFS320(G,J).pdf
UFS310Je3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS315J/TR13 UFS305%28G%2CJ%29-UFS320%28G%2CJ%29.pdf
UFS315J/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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UFS315JE3/TR13 UFS305%28G%2CJ%29-UFS320%28G%2CJ%29.pdf
UFS315JE3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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UFS380Je3/TR13 UFS360(G,J)-UFS380(G,J).pdf
UFS380Je3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A DO214AB
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UFS510G/TR13 UFS510%28G%2CJ%29-UFS520%28G%2CJ%29.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 5A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS510Ge3/TR13 UFS510%28G%2CJ%29-UFS520%28G%2CJ%29.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 5A DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS510J/TR13 UFS510%28G%2CJ%29-UFS520%28G%2CJ%29.pdf
UFS510J/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS510Je3/TR13 UFS510%28G%2CJ%29-UFS520%28G%2CJ%29.pdf
UFS510Je3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UFS540G/TR13 UFS530(G,J)-UFS550(G,J).pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO215AB
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UFS540Ge3/TR13 UFS530(G,J)-UFS550(G,J).pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO215AB
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UFS540J/TR13 UFS530(G,J)-UFS550(G,J).pdf
UFS540J/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO214AB
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UFS540Je3/TR13 UFS530%28G%2CJ%29-UFS550%28G%2CJ%29.pdf
UFS540Je3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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UPR10e3/TR13 UPR5E3, UPR10E3, UPR15E3.pdf
UPR10e3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UPR30e3/TR13 UPR20-40.pdf
UPR30e3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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UPR5/TR13 UPR5 10 15.pdf
UPR5/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UPR5e3/TR13 UPR5 10 15.pdf
UPR5e3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UPR60/TR13 UPR60.pdf
UPR60/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UPR60e3/TR13 UPR60.pdf
UPR60e3/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UPS10100/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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UPS10100e3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
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UPS120/TR13 11387-ups120e3-rev-e-datasheet
UPS120/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120E/TR13 11387-ups120e3-rev-e-datasheet
UPS120E/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120E3/TR13 11387-ups120e3-rev-e-datasheet
UPS120E3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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UPS120EE3/TR13 UPS120Ee3.pdf
UPS120EE3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
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UPS140/TR13 ups140.pdf
UPS140/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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UPS140E3/TR13 ups140.pdf
UPS140E3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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UPS170/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 1A 70V POWERMITE
Packaging: Tape & Reel (TR)
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UPS170e3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 1A 70V POWERMITE
Packaging: Tape & Reel (TR)
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UPS315/TR13 11392-ups315-datasheet
UPS315/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
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UPS315e3/TR13 11392-ups315-datasheet
UPS315e3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
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UPS5100/TR13 RF01314.pdf
UPS5100/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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UPS540/TR13 UPS540e3.pdf
UPS540/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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UPS560/TR13 UPS560.pdf
UPS560/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 60V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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UPS5817/TR13 131649-rf01129.pdf
UPS5817/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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UPS5817e3/TR13 UPS5817e3.pdf
UPS5817e3/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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UPS5819/TR13 UPS5817%205819.pdf
UPS5819/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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UPS760/TR13
UPS760/TR13
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 60V 7A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 375pF @ 4V, 1MHz
Current - Average Rectified (Io): 7A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 7 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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UPT17/TR13 UPT+RF01103_Rev_B_Final-PD-000177967+%284%29.pdf
UPT17/TR13
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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