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MT29F2T08EMLEEJ4-R:E MT29F2T08EMLEEJ4-R:E Micron Technology Inc. Description: IC FLASH 2TBIT VBGA
Packaging: Box
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMLEEJ4-R:E TR MT29F2T08EMLEEJ4-R:E TR Micron Technology Inc. Description: IC FLASH 2TBIT VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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M25PX16STVZM6TP TR M25PX16STVZM6TP TR Micron Technology Inc. M25PX16.pdf Description: IC FLASH 16MBIT SPI 75MHZ 24TBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 75 MHz
Memory Format: FLASH
Supplier Device Package: 24-TBGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 2M x 8
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MT46V64M8TG-5B IT:J TR MT46V64M8TG-5B IT:J TR Micron Technology Inc. MT46V128M4,_64M8,_32M16.pdf Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 64M x 8
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MT47H64M16HR-187E:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PAR 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 533 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 350 ps
Memory Organization: 64M x 16
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MTA4ATF51264HZ-2G1B1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2133
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MTA4ATF51264HZ-3G2J2 Micron Technology Inc. atf4c512x64hz.pdf Description: MODULE DDR4 SDRAM 4GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 3200
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MTA4ATF51264AZ-2G3H1 Micron Technology Inc. atf4c512x64az.pdf Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2400
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MTA4ATF51264AZ-2G6B1 Micron Technology Inc. atf4c512x64az.pdf Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2666
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MTA4ATF51264AZ-2G6H1 Micron Technology Inc. atf4c512x64az.pdf Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2666
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M25P05-AVMN6P M25P05-AVMN6P Micron Technology Inc. SGSTS20956-1.pdf?t.download=true&u=5oefqw Description: IC FLASH 512KBIT SPI 50MHZ 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
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MT25QL128ABB1ESE-0AUT MT25QL128ABB1ESE-0AUT Micron Technology Inc. mt25q_qlht_l_128_abb_xxt.pdf?rev=c06573d8dd7547a7be6be3334b37b593 Description: IC FLASH 128MBIT SPI 133MHZ 8SO
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Part Status: Active
Write Cycle Time - Word, Page: 1.8ms
Memory Interface: SPI - Quad I/O
Access Time: 5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1099 шт:
термін постачання 21-31 дні (днів)
2+298.77 грн
10+268.39 грн
25+260.40 грн
50+238.72 грн
100+233.05 грн
250+225.61 грн
500+216.43 грн
Мінімальне замовлення: 2
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N25Q032A11EF440F TR Micron Technology Inc. N25Q032A.pdf Description: IC FLASH 32MBIT SPI 8UPDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-UPDFN (4x3) (MLP8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV740 Micron Technology Inc. Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13ESEC0E Micron Technology Inc. Description: IC FLASH 32MBIT SPI 108MHZ 8SOP2
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP2
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV140 Micron Technology Inc. Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV741 Micron Technology Inc. Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
DigiKey Programmable: Not Verified
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MT41K2G4TRF-125:E TR Micron Technology Inc. MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x11.5)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 4
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MT41K2G8KJR-125:A MT41K2G8KJR-125:A Micron Technology Inc. MT41K4G4,%20MT41K2G8.pdf Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 8
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MT41K2G8KJR-125:A TR MT41K2G8KJR-125:A TR Micron Technology Inc. MT41K4G4,%20MT41K2G8.pdf Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 8
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MT41K2G4RKB-107 C:N TR Micron Technology Inc. MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 2G x 4
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MT41K2G4RKB-107 C:N Micron Technology Inc. MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 2G x 4
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MT41K2G4SN-107:A TR MT41K2G4SN-107:A TR Micron Technology Inc. MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf Description: IC DRAM 8GBIT PAR 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x13.2)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 2G x 4
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MT55L256V32PT-6IT MT55L256V32PT-6IT Micron Technology Inc. MICTS00719-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 8MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - ZBT
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 32
DigiKey Programmable: Not Verified
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
19+1184.46 грн
Мінімальне замовлення: 19
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MT40A1G16KD-062E IT:E TR Micron Technology Inc. MT40A4G4_2G8_1G16_RevH_Aug2021.pdf Description: IC DRAM 16GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 1G x 16
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PC28F512P30EFB TR PC28F512P30EFB TR Micron Technology Inc. Description: IC FLASH 512MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
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MT53B128M32D1Z00NWC2 AT Micron Technology Inc. Description: IC DRAM 4GBIT FBGA
Packaging: Bulk
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Memory Format: DRAM
Part Status: Obsolete
Memory Organization: 128M x 32
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MT28F800B3WG-9 T MT28F800B3WG-9 T Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 TET TR MT28F800B3WG-9 TET TR Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 B MT28F800B3WG-9 B Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 BET TR MT28F800B3WG-9 BET TR Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WP-9 T TR MT28F800B3WP-9 T TR Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WP-9 B TR MT28F800B3WP-9 B TR Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 TET MT28F800B3WG-9 TET Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 BET MT28F800B3WG-9 BET Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
MT28F800B3WP-9 B MT28F800B3WP-9 B Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 T TR MT28F800B3WG-9 T TR Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WP-9 T MT28F800B3WP-9 T Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 B TR MT28F800B3WG-9 B TR Micron Technology Inc. MT28F%28008%2C800%29B3.pdf Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT58L256L18D1T-6 MT58L256L18D1T-6 Micron Technology Inc. MICTS01103-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 4MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 18
на замовлення 17906 шт:
термін постачання 21-31 дні (днів)
45+554.15 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
MT58V1MV18DT-6 MT58V1MV18DT-6 Micron Technology Inc. MICTS01167-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Standard
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1M x 18
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
16+1550.30 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MT29F1T08GBLCEJ4:C TR Micron Technology Inc. Description: QLC 1T 128GX8 VBGA
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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MT29F1T08GBLCEJ4:C Micron Technology Inc. Description: QLC 1T 128GX8 VBGA
Packaging: Box
Part Status: Active
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В кошику  од. на суму  грн.
MT29F1T08GBLCEJ4-QM:C Micron Technology Inc. Description: QLC 1T 128GX8 VBGA
Packaging: Box
Part Status: Active
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В кошику  од. на суму  грн.
MT29F1T08GBLCEJ4-M:C TR Micron Technology Inc. Description: QLC 1T 128GX8 VBGA
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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MT29F1T08GBLCEJ4-M:C Micron Technology Inc. Description: QLC 1T 128GX8 VBGA
Packaging: Box
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
MT29F1T08GBLCEJ4-QM:C TR Micron Technology Inc. Description: QLC 1T 128GX8 VBGA
Packaging: Tape & Reel (TR)
Part Status: Active
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EDS6432AFTA-75TI-E-D Micron Technology Inc. Description: SDRAM 2MX32 PLASTIC TSOP 3.3V EX
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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M29F400FT55M32 Micron Technology Inc. M29F(200,400,800,160)F(T,B)_Rev.C,5,2018.pdf Description: IC FLASH 4MBIT PARALLEL 44SO
Packaging: Tray
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 44-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8, 256K x 16
DigiKey Programmable: Not Verified
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MT41K512M8RG-093:N Micron Technology Inc. Description: IC DRAM 4GBIT PAR 78FBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x10.6)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT41K512M8RG-093:N TR Micron Technology Inc. 4gb_ddr3l.pdf?rev=305217e2f9bd4ef48d7c6f353dfc064c Description: IC DRAM 4GBIT PAR 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x10.6)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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N25Q128A13EV741 Micron Technology Inc. Description: IC FLASH 128MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 32M x 4
DigiKey Programmable: Not Verified
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N25Q128A13BSFH0F N25Q128A13BSFH0F Micron Technology Inc. Description: IC FLASH 128MBIT SPI 108MHZ 16SO
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 32M x 4
DigiKey Programmable: Not Verified
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N25Q128A13EW7DFF Micron Technology Inc. Description: IC FLASH 128MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 32M x 4
DigiKey Programmable: Not Verified
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MT53E2G32D4DE-046 AUT:C MT53E2G32D4DE-046 AUT:C Micron Technology Inc. Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E2G32D4DE-046 AAT:C MT53E2G32D4DE-046 AAT:C Micron Technology Inc. Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
1+13289.73 грн
10+11781.03 грн
25+11388.87 грн
50+10415.69 грн
В кошику  од. на суму  грн.
MT53E2G32D4DE-046 AUT:C TR MT53E2G32D4DE-046 AUT:C TR Micron Technology Inc. Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E2G32D4DE-046 AIT:C TR Micron Technology Inc. Description: LPDDR4 64G 2GX32 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
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MT53E2G32D4DE-046 WT:C TR MT53E2G32D4DE-046 WT:C TR Micron Technology Inc. z42n_embedded_lpddr4x_lpddr4.pdf Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
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MT53E2G32D4DE-046 AIT:C MT53E2G32D4DE-046 AIT:C Micron Technology Inc. Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
1+5774.76 грн
10+5131.07 грн
25+4962.97 грн
50+4540.18 грн
100+4424.84 грн
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MT29F2T08EMLEEJ4-R:E
MT29F2T08EMLEEJ4-R:E
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT VBGA
Packaging: Box
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMLEEJ4-R:E TR
MT29F2T08EMLEEJ4-R:E TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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M25PX16STVZM6TP TR M25PX16.pdf
M25PX16STVZM6TP TR
Виробник: Micron Technology Inc.
Description: IC FLASH 16MBIT SPI 75MHZ 24TBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 75 MHz
Memory Format: FLASH
Supplier Device Package: 24-TBGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 2M x 8
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MT46V64M8TG-5B IT:J TR MT46V128M4,_64M8,_32M16.pdf
MT46V64M8TG-5B IT:J TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 64M x 8
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MT47H64M16HR-187E:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 533 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 350 ps
Memory Organization: 64M x 16
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MTA4ATF51264HZ-2G1B1
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2133
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MTA4ATF51264HZ-3G2J2 atf4c512x64hz.pdf
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 3200
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MTA4ATF51264AZ-2G3H1 atf4c512x64az.pdf
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2400
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MTA4ATF51264AZ-2G6B1 atf4c512x64az.pdf
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2666
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MTA4ATF51264AZ-2G6H1 atf4c512x64az.pdf
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2666
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M25P05-AVMN6P SGSTS20956-1.pdf?t.download=true&u=5oefqw
M25P05-AVMN6P
Виробник: Micron Technology Inc.
Description: IC FLASH 512KBIT SPI 50MHZ 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
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MT25QL128ABB1ESE-0AUT mt25q_qlht_l_128_abb_xxt.pdf?rev=c06573d8dd7547a7be6be3334b37b593
MT25QL128ABB1ESE-0AUT
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT SPI 133MHZ 8SO
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Part Status: Active
Write Cycle Time - Word, Page: 1.8ms
Memory Interface: SPI - Quad I/O
Access Time: 5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1099 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+298.77 грн
10+268.39 грн
25+260.40 грн
50+238.72 грн
100+233.05 грн
250+225.61 грн
500+216.43 грн
Мінімальне замовлення: 2
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N25Q032A11EF440F TR N25Q032A.pdf
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 8UPDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-UPDFN (4x3) (MLP8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV740
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13ESEC0E
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 108MHZ 8SOP2
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP2
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV140
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV741
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
DigiKey Programmable: Not Verified
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MT41K2G4TRF-125:E TR MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x11.5)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 4
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MT41K2G8KJR-125:A MT41K4G4,%20MT41K2G8.pdf
MT41K2G8KJR-125:A
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 8
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MT41K2G8KJR-125:A TR MT41K4G4,%20MT41K2G8.pdf
MT41K2G8KJR-125:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 8
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MT41K2G4RKB-107 C:N TR MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 2G x 4
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MT41K2G4RKB-107 C:N MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 2G x 4
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MT41K2G4SN-107:A TR MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf
MT41K2G4SN-107:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9x13.2)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 2G x 4
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MT55L256V32PT-6IT MICTS00719-1.pdf?t.download=true&u=5oefqw
MT55L256V32PT-6IT
Виробник: Micron Technology Inc.
Description: IC SRAM 8MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - ZBT
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 32
DigiKey Programmable: Not Verified
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+1184.46 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
MT40A1G16KD-062E IT:E TR MT40A4G4_2G8_1G16_RevH_Aug2021.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 19 ns
Memory Organization: 1G x 16
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PC28F512P30EFB TR
PC28F512P30EFB TR
Виробник: Micron Technology Inc.
Description: IC FLASH 512MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Part Status: Obsolete
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
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MT53B128M32D1Z00NWC2 AT
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT FBGA
Packaging: Bulk
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Memory Format: DRAM
Part Status: Obsolete
Memory Organization: 128M x 32
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MT28F800B3WG-9 T MT28F%28008%2C800%29B3.pdf
MT28F800B3WG-9 T
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 TET TR MT28F%28008%2C800%29B3.pdf
MT28F800B3WG-9 TET TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 B MT28F%28008%2C800%29B3.pdf
MT28F800B3WG-9 B
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 BET TR MT28F%28008%2C800%29B3.pdf
MT28F800B3WG-9 BET TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WP-9 T TR MT28F%28008%2C800%29B3.pdf
MT28F800B3WP-9 T TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WP-9 B TR MT28F%28008%2C800%29B3.pdf
MT28F800B3WP-9 B TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 TET MT28F%28008%2C800%29B3.pdf
MT28F800B3WG-9 TET
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 BET MT28F%28008%2C800%29B3.pdf
MT28F800B3WG-9 BET
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WP-9 B MT28F%28008%2C800%29B3.pdf
MT28F800B3WP-9 B
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 T TR MT28F%28008%2C800%29B3.pdf
MT28F800B3WG-9 T TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WP-9 T MT28F%28008%2C800%29B3.pdf
MT28F800B3WP-9 T
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT28F800B3WG-9 B TR MT28F%28008%2C800%29B3.pdf
MT28F800B3WG-9 B TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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MT58L256L18D1T-6 MICTS01103-1.pdf?t.download=true&u=5oefqw
MT58L256L18D1T-6
Виробник: Micron Technology Inc.
Description: IC SRAM 4MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Standard
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 18
на замовлення 17906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
45+554.15 грн
Мінімальне замовлення: 45
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MT58V1MV18DT-6 MICTS01167-1.pdf?t.download=true&u=5oefqw
MT58V1MV18DT-6
Виробник: Micron Technology Inc.
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Standard
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1M x 18
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+1550.30 грн
Мінімальне замовлення: 16
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MT29F1T08GBLCEJ4:C TR
Виробник: Micron Technology Inc.
Description: QLC 1T 128GX8 VBGA
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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MT29F1T08GBLCEJ4:C
Виробник: Micron Technology Inc.
Description: QLC 1T 128GX8 VBGA
Packaging: Box
Part Status: Active
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MT29F1T08GBLCEJ4-QM:C
Виробник: Micron Technology Inc.
Description: QLC 1T 128GX8 VBGA
Packaging: Box
Part Status: Active
товару немає в наявності
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MT29F1T08GBLCEJ4-M:C TR
Виробник: Micron Technology Inc.
Description: QLC 1T 128GX8 VBGA
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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MT29F1T08GBLCEJ4-M:C
Виробник: Micron Technology Inc.
Description: QLC 1T 128GX8 VBGA
Packaging: Box
Part Status: Active
товару немає в наявності
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MT29F1T08GBLCEJ4-QM:C TR
Виробник: Micron Technology Inc.
Description: QLC 1T 128GX8 VBGA
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
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EDS6432AFTA-75TI-E-D
Виробник: Micron Technology Inc.
Description: SDRAM 2MX32 PLASTIC TSOP 3.3V EX
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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M29F400FT55M32 M29F(200,400,800,160)F(T,B)_Rev.C,5,2018.pdf
Виробник: Micron Technology Inc.
Description: IC FLASH 4MBIT PARALLEL 44SO
Packaging: Tray
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 44-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8, 256K x 16
DigiKey Programmable: Not Verified
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MT41K512M8RG-093:N
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 78FBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x10.6)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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MT41K512M8RG-093:N TR 4gb_ddr3l.pdf?rev=305217e2f9bd4ef48d7c6f353dfc064c
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x10.6)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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N25Q128A13EV741
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 32M x 4
DigiKey Programmable: Not Verified
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N25Q128A13BSFH0F
N25Q128A13BSFH0F
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT SPI 108MHZ 16SO
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 32M x 4
DigiKey Programmable: Not Verified
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N25Q128A13EW7DFF
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 32M x 4
DigiKey Programmable: Not Verified
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MT53E2G32D4DE-046 AUT:C
MT53E2G32D4DE-046 AUT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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MT53E2G32D4DE-046 AAT:C
MT53E2G32D4DE-046 AAT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13289.73 грн
10+11781.03 грн
25+11388.87 грн
50+10415.69 грн
В кошику  од. на суму  грн.
MT53E2G32D4DE-046 AUT:C TR
MT53E2G32D4DE-046 AUT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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MT53E2G32D4DE-046 AIT:C TR
Виробник: Micron Technology Inc.
Description: LPDDR4 64G 2GX32 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
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MT53E2G32D4DE-046 WT:C TR z42n_embedded_lpddr4x_lpddr4.pdf
MT53E2G32D4DE-046 WT:C TR
Виробник: Micron Technology Inc.
Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
товару немає в наявності
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MT53E2G32D4DE-046 AIT:C
MT53E2G32D4DE-046 AIT:C
Виробник: Micron Technology Inc.
Description: IC DRAM 64GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 2G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5774.76 грн
10+5131.07 грн
25+4962.97 грн
50+4540.18 грн
100+4424.84 грн
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