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MTFDKCC3T2TFC-1AZ45ABYY Micron Technology Inc. Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
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MTFDKCB3T2TFS-1BC1ZABYY Micron Technology Inc. 7450-product-catalog.pdf Description: SSD 3.2TB 2.5" TLC NVME
Packaging: Tray
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
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MTFDKCC3T2TFS-1BC4ZABYY Micron Technology Inc. 7450_nvme_ssd_product_brief.pdf Description: 7450 3200GB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
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MTFDKCC3T2TFC-1AZ4ZABYY Micron Technology Inc. Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
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MTFDKCC3T2TFS-1BC45ABYY Micron Technology Inc. Description: 7450 3200GB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
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MTFDKCC3T2TFS-1BC15ABYY Micron Technology Inc. 7450-product-catalog.pdf Description: 7450 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
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MTFDKCC3T2TFS-1BC1ZABYY MTFDKCC3T2TFS-1BC1ZABYY Micron Technology Inc. Description: IC SSD FLASH NAND SLC
Packaging: Bulk
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) -
Type: NVMe
Form Factor: U.3 Module
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+64579.95 грн
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MTSD128ANC8MS-1WT MTSD128ANC8MS-1WT Micron Technology Inc. micro-sd-card-flyer.pdf Description: MEM CARD MICROSD 128GB 10 UHS 1
Packaging: Tray
Memory Size: 128GB
Speed: Class 10, UHS Class 1
Memory Type: microSD™
Operating Temperature: -25°C ~ 85°C
Part Status: Active
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+3318.53 грн
10+2835.06 грн
25+2703.20 грн
40+2475.53 грн
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MT29F8T08EWLKEM5-ITF:K Micron Technology Inc. Description: IC FLASH 8TBIT LBGA
Packaging: Box
Memory Size: 8Tbit
Memory Format: FLASH
Part Status: Active
Memory Organization: 1T x 8
DigiKey Programmable: Not Verified
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MT29F8T08EWLKEM5-ITF:K TR Micron Technology Inc. Description: IC FLASH 8TBIT LBGA
Packaging: Tape & Reel (TR)
Memory Size: 8Tbit
Memory Format: FLASH
Part Status: Active
Memory Organization: 1T x 8
DigiKey Programmable: Not Verified
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MT53E512M16D1Z11MWC1 Micron Technology Inc. Description: LPDDR4 8G DIE 512MX16
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Memory Format: DRAM
Supplier Device Package: Wafer
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT53D512M16D1DS-046 IT:D MT53D512M16D1DS-046 IT:D Micron Technology Inc. 200b_z11m_sdp_ddp_qdp_auto_lpddr4_lpddr4x_mt53d.pdf Description: IC DRAM 8GBIT 2.133GHZ 200WFBGA
Packaging: Box
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Part Status: Active
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
на замовлення 1355 шт:
термін постачання 21-31 дні (днів)
1+873.00 грн
10+746.26 грн
25+711.68 грн
50+644.34 грн
100+621.58 грн
250+592.67 грн
500+562.28 грн
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MT53D512M16D1DS-046 IT:D TR Micron Technology Inc. 200b_z11m_sdp_ddp_qdp_auto_lpddr4_lpddr4x_mt53d.pdf Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512M x 16
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MT53E512M16D1FW-046 AAT:D MT53E512M16D1FW-046 AAT:D Micron Technology Inc. Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT53E512M16D1FW-046 AAT:D TR MT53E512M16D1FW-046 AAT:D TR Micron Technology Inc. Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT53E512M16D1FW-046 AIT:D MT53E512M16D1FW-046 AIT:D Micron Technology Inc. Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT53E512M16D1FW-046 AIT:D TR MT53E512M16D1FW-046 AIT:D TR Micron Technology Inc. Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT41K512M16VRP-107 IT:P TR Micron Technology Inc. Description: IC DRAM 8GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
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MT41K512M16VRP-107 AAT:P TR MT41K512M16VRP-107 AAT:P TR Micron Technology Inc. ddr3l_8gb_x16_1cs_twindie_v00h.pdf Description: IC DRAM 8GBIT PAR 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT41K512M16VRP-107 AAT:P Micron Technology Inc. ddr3l_8gb_x16_1cs_twindie_v00h.pdf Description: IC DRAM 8GBIT PAR 96FBGA
Packaging: Box
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 937 шт:
термін постачання 21-31 дні (днів)
1+1559.79 грн
10+1332.96 грн
25+1271.01 грн
50+1150.60 грн
100+1109.83 грн
250+1058.07 грн
500+1003.74 грн
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MT55V512V36PF-10 MT55V512V36PF-10 Micron Technology Inc. MICTS01163-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - ZBT
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 512K x 36
на замовлення 669 шт:
термін постачання 21-31 дні (днів)
18+1292.26 грн
Мінімальне замовлення: 18
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MT55V512V32PF-10 MT55V512V32PF-10 Micron Technology Inc. MICTS01163-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - ZBT
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
16+1381.53 грн
Мінімальне замовлення: 16
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MT47H128M8SH-25E AAT:M MT47H128M8SH-25E AAT:M Micron Technology Inc. MT47H256M4_MT47H128M8_MT47H64M16_DS.pdf Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x10)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 128M x 8
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MT47H128M8SH-25E AAT:M TR MT47H128M8SH-25E AAT:M TR Micron Technology Inc. MT47H256M4_MT47H128M8_MT47H64M16_DS.pdf Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x10)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 128M x 8
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MTFC16GLWDM-4M AIT Z MTFC16GLWDM-4M AIT Z Micron Technology Inc. Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLXAM-WT TR Micron Technology Inc. Description: IC FLASH 128GBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLTAM-WT TR Micron Technology Inc. Description: IC FLASH 128GBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLTDV-WT TR Micron Technology Inc. Description: IC FLASH 128GBIT MMC 169VFBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLWDQ-4M AIT Z TR MTFC16GLWDQ-4M AIT Z TR Micron Technology Inc. Description: IC FLASH 128GBIT MMC 100LBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-LBGA (14x18)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLXDV-WT TR Micron Technology Inc. Description: IC FLASH 128GBIT MMC 169VFBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLWDQ-4M AIT Z MTFC16GLWDQ-4M AIT Z Micron Technology Inc. Description: IC FLASH 128GBIT MMC 100LBGA
Packaging: Tray
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-LBGA (14x18)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC256GARATEK-WT TR Micron Technology Inc. Description: UFS 2T
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS 3.1
Memory Organization: 256G x 8
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MTFC256GAXAUEA-WT TR Micron Technology Inc. Description: UFS 2T
Packaging: Tape & Reel (TR)
Package / Case: 153-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-WFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS
Memory Organization: 256G x 8
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MTFC256GAXAUEA-WT Micron Technology Inc. Description: UFS 2T
Packaging: Box
Package / Case: 153-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-WFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS
Memory Organization: 256G x 8
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MTFC256GAXATEA-WT Micron Technology Inc. Description: UFS 2T
Packaging: Box
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
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MTFC256GAXATEA-WT TR Micron Technology Inc. Description: UFS 2T
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
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MTFC256GARATEK-WT Micron Technology Inc. Description: UFS 2T
Packaging: Box
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS 3.1
Memory Organization: 256G x 8
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В кошику  од. на суму  грн.
MT29F2T08EMLEEJ4-T:E TR MT29F2T08EMLEEJ4-T:E TR Micron Technology Inc. Description: IC FLASH 2TBIT VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMLEEJ4-T:E MT29F2T08EMLEEJ4-T:E Micron Technology Inc. Description: IC FLASH 2TBIT VBGA
Packaging: Box
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMLEEJ4-R:E MT29F2T08EMLEEJ4-R:E Micron Technology Inc. Description: IC FLASH 2TBIT VBGA
Packaging: Box
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMLEEJ4-R:E TR MT29F2T08EMLEEJ4-R:E TR Micron Technology Inc. Description: IC FLASH 2TBIT VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
M25PX16STVZM6TP TR M25PX16STVZM6TP TR Micron Technology Inc. M25PX16.pdf Description: IC FLASH 16MBIT SPI 75MHZ 24TBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 75 MHz
Memory Format: FLASH
Supplier Device Package: 24-TBGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 2M x 8
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MT46V64M8TG-5B IT:J TR MT46V64M8TG-5B IT:J TR Micron Technology Inc. MT46V128M4,_64M8,_32M16.pdf Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 64M x 8
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MT47H64M16HR-187E:H TR Micron Technology Inc. 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c Description: IC DRAM 1GBIT PAR 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 533 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 350 ps
Memory Organization: 64M x 16
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MTA4ATF51264HZ-2G1B1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 4GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2133
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MTA4ATF51264HZ-3G2J2 Micron Technology Inc. atf4c512x64hz.pdf Description: MODULE DDR4 SDRAM 4GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 3200
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В кошику  од. на суму  грн.
MTA4ATF51264AZ-2G3H1 Micron Technology Inc. atf4c512x64az.pdf Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2400
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В кошику  од. на суму  грн.
MTA4ATF51264AZ-2G6B1 Micron Technology Inc. atf4c512x64az.pdf Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2666
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В кошику  од. на суму  грн.
MTA4ATF51264AZ-2G6H1 Micron Technology Inc. atf4c512x64az.pdf Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2666
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M25P05-AVMN6P M25P05-AVMN6P Micron Technology Inc. SGSTS20956-1.pdf?t.download=true&u=5oefqw Description: IC FLASH 512KBIT SPI 50MHZ 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
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MT25QL128ABB1ESE-0AUT MT25QL128ABB1ESE-0AUT Micron Technology Inc. mt25q_qlht_l_128_abb_xxt.pdf?rev=c06573d8dd7547a7be6be3334b37b593 Description: IC FLASH 128MBIT SPI 133MHZ 8SO
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 1.8ms
Memory Interface: SPI - Quad I/O
Access Time: 5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)
2+296.04 грн
10+265.46 грн
25+257.55 грн
40+237.92 грн
80+232.30 грн
230+223.80 грн
440+215.05 грн
1800+204.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
N25Q032A11EF440F TR Micron Technology Inc. N25Q032A.pdf Description: IC FLASH 32MBIT SPI 8UPDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-UPDFN (4x3) (MLP8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV740 Micron Technology Inc. Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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В кошику  од. на суму  грн.
N25Q032A13ESEC0E Micron Technology Inc. Description: IC FLASH 32MBIT SPI 108MHZ 8SOP2
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP2
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV140 Micron Technology Inc. Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV741 Micron Technology Inc. Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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MT41K2G4TRF-125:E TR Micron Technology Inc. MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x11.5)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 4
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MT41K2G8KJR-125:A MT41K2G8KJR-125:A Micron Technology Inc. MT41K4G4,%20MT41K2G8.pdf Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 8
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MT41K2G8KJR-125:A TR MT41K2G8KJR-125:A TR Micron Technology Inc. MT41K4G4,%20MT41K2G8.pdf Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 8
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MT41K2G4RKB-107 C:N TR Micron Technology Inc. MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 2G x 4
товару немає в наявності
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MTFDKCC3T2TFC-1AZ45ABYY
Виробник: Micron Technology Inc.
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
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MTFDKCB3T2TFS-1BC1ZABYY 7450-product-catalog.pdf
Виробник: Micron Technology Inc.
Description: SSD 3.2TB 2.5" TLC NVME
Packaging: Tray
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
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MTFDKCC3T2TFS-1BC4ZABYY 7450_nvme_ssd_product_brief.pdf
Виробник: Micron Technology Inc.
Description: 7450 3200GB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
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MTFDKCC3T2TFC-1AZ4ZABYY
Виробник: Micron Technology Inc.
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
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MTFDKCC3T2TFS-1BC45ABYY
Виробник: Micron Technology Inc.
Description: 7450 3200GB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
товару немає в наявності
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MTFDKCC3T2TFS-1BC15ABYY 7450-product-catalog.pdf
Виробник: Micron Technology Inc.
Description: 7450 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
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MTFDKCC3T2TFS-1BC1ZABYY
MTFDKCC3T2TFS-1BC1ZABYY
Виробник: Micron Technology Inc.
Description: IC SSD FLASH NAND SLC
Packaging: Bulk
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) -
Type: NVMe
Form Factor: U.3 Module
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+64579.95 грн
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MTSD128ANC8MS-1WT micro-sd-card-flyer.pdf
MTSD128ANC8MS-1WT
Виробник: Micron Technology Inc.
Description: MEM CARD MICROSD 128GB 10 UHS 1
Packaging: Tray
Memory Size: 128GB
Speed: Class 10, UHS Class 1
Memory Type: microSD™
Operating Temperature: -25°C ~ 85°C
Part Status: Active
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3318.53 грн
10+2835.06 грн
25+2703.20 грн
40+2475.53 грн
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MT29F8T08EWLKEM5-ITF:K
Виробник: Micron Technology Inc.
Description: IC FLASH 8TBIT LBGA
Packaging: Box
Memory Size: 8Tbit
Memory Format: FLASH
Part Status: Active
Memory Organization: 1T x 8
DigiKey Programmable: Not Verified
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MT29F8T08EWLKEM5-ITF:K TR
Виробник: Micron Technology Inc.
Description: IC FLASH 8TBIT LBGA
Packaging: Tape & Reel (TR)
Memory Size: 8Tbit
Memory Format: FLASH
Part Status: Active
Memory Organization: 1T x 8
DigiKey Programmable: Not Verified
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MT53E512M16D1Z11MWC1
Виробник: Micron Technology Inc.
Description: LPDDR4 8G DIE 512MX16
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Memory Format: DRAM
Supplier Device Package: Wafer
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT53D512M16D1DS-046 IT:D 200b_z11m_sdp_ddp_qdp_auto_lpddr4_lpddr4x_mt53d.pdf
MT53D512M16D1DS-046 IT:D
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT 2.133GHZ 200WFBGA
Packaging: Box
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Part Status: Active
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
на замовлення 1355 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+873.00 грн
10+746.26 грн
25+711.68 грн
50+644.34 грн
100+621.58 грн
250+592.67 грн
500+562.28 грн
В кошику  од. на суму  грн.
MT53D512M16D1DS-046 IT:D TR 200b_z11m_sdp_ddp_qdp_auto_lpddr4_lpddr4x_mt53d.pdf
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512M x 16
товару немає в наявності
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MT53E512M16D1FW-046 AAT:D
MT53E512M16D1FW-046 AAT:D
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT53E512M16D1FW-046 AAT:D TR
MT53E512M16D1FW-046 AAT:D TR
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT53E512M16D1FW-046 AIT:D
MT53E512M16D1FW-046 AIT:D
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT53E512M16D1FW-046 AIT:D TR
MT53E512M16D1FW-046 AIT:D TR
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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MT41K512M16VRP-107 IT:P TR
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
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MT41K512M16VRP-107 AAT:P TR ddr3l_8gb_x16_1cs_twindie_v00h.pdf
MT41K512M16VRP-107 AAT:P TR
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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MT41K512M16VRP-107 AAT:P ddr3l_8gb_x16_1cs_twindie_v00h.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 96FBGA
Packaging: Box
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 937 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1559.79 грн
10+1332.96 грн
25+1271.01 грн
50+1150.60 грн
100+1109.83 грн
250+1058.07 грн
500+1003.74 грн
В кошику  од. на суму  грн.
MT55V512V36PF-10 MICTS01163-1.pdf?t.download=true&u=5oefqw
MT55V512V36PF-10
Виробник: Micron Technology Inc.
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - ZBT
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 512K x 36
на замовлення 669 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+1292.26 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
MT55V512V32PF-10 MICTS01163-1.pdf?t.download=true&u=5oefqw
MT55V512V32PF-10
Виробник: Micron Technology Inc.
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - ZBT
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+1381.53 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MT47H128M8SH-25E AAT:M MT47H256M4_MT47H128M8_MT47H64M16_DS.pdf
MT47H128M8SH-25E AAT:M
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x10)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 128M x 8
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MT47H128M8SH-25E AAT:M TR MT47H256M4_MT47H128M8_MT47H64M16_DS.pdf
MT47H128M8SH-25E AAT:M TR
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (8x10)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 128M x 8
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MTFC16GLWDM-4M AIT Z
MTFC16GLWDM-4M AIT Z
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLXAM-WT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLTAM-WT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153VFBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLTDV-WT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 169VFBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLWDQ-4M AIT Z TR
MTFC16GLWDQ-4M AIT Z TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 100LBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-LBGA (14x18)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLXDV-WT TR
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 169VFBGA
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC16GLWDQ-4M AIT Z
MTFC16GLWDQ-4M AIT Z
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 100LBGA
Packaging: Tray
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-LBGA (14x18)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
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MTFC256GARATEK-WT TR
Виробник: Micron Technology Inc.
Description: UFS 2T
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS 3.1
Memory Organization: 256G x 8
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MTFC256GAXAUEA-WT TR
Виробник: Micron Technology Inc.
Description: UFS 2T
Packaging: Tape & Reel (TR)
Package / Case: 153-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-WFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS
Memory Organization: 256G x 8
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MTFC256GAXAUEA-WT
Виробник: Micron Technology Inc.
Description: UFS 2T
Packaging: Box
Package / Case: 153-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-WFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS
Memory Organization: 256G x 8
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MTFC256GAXATEA-WT
Виробник: Micron Technology Inc.
Description: UFS 2T
Packaging: Box
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
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MTFC256GAXATEA-WT TR
Виробник: Micron Technology Inc.
Description: UFS 2T
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
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MTFC256GARATEK-WT
Виробник: Micron Technology Inc.
Description: UFS 2T
Packaging: Box
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS 3.1
Memory Organization: 256G x 8
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MT29F2T08EMLEEJ4-T:E TR
MT29F2T08EMLEEJ4-T:E TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMLEEJ4-T:E
MT29F2T08EMLEEJ4-T:E
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT VBGA
Packaging: Box
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMLEEJ4-R:E
MT29F2T08EMLEEJ4-R:E
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT VBGA
Packaging: Box
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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MT29F2T08EMLEEJ4-R:E TR
MT29F2T08EMLEEJ4-R:E TR
Виробник: Micron Technology Inc.
Description: IC FLASH 2TBIT VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.6V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
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M25PX16STVZM6TP TR M25PX16.pdf
M25PX16STVZM6TP TR
Виробник: Micron Technology Inc.
Description: IC FLASH 16MBIT SPI 75MHZ 24TBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 75 MHz
Memory Format: FLASH
Supplier Device Package: 24-TBGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 2M x 8
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MT46V64M8TG-5B IT:J TR MT46V128M4,_64M8,_32M16.pdf
MT46V64M8TG-5B IT:J TR
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 64M x 8
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MT47H64M16HR-187E:H TR 1gb_ddr2.pdf?rev=854b480189b84d558d466bc18efe270c
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 533 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 350 ps
Memory Organization: 64M x 16
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MTA4ATF51264HZ-2G1B1
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2133
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MTA4ATF51264HZ-3G2J2 atf4c512x64hz.pdf
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 3200
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MTA4ATF51264AZ-2G3H1 atf4c512x64az.pdf
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2400
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MTA4ATF51264AZ-2G6B1 atf4c512x64az.pdf
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2666
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MTA4ATF51264AZ-2G6H1 atf4c512x64az.pdf
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 4GB 288UDIMM
Packaging: Bulk
Package / Case: 288-UDIMM
Memory Size: 4GB
Memory Type: DDR4 SDRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 2666
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M25P05-AVMN6P SGSTS20956-1.pdf?t.download=true&u=5oefqw
M25P05-AVMN6P
Виробник: Micron Technology Inc.
Description: IC FLASH 512KBIT SPI 50MHZ 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
товару немає в наявності
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MT25QL128ABB1ESE-0AUT mt25q_qlht_l_128_abb_xxt.pdf?rev=c06573d8dd7547a7be6be3334b37b593
MT25QL128ABB1ESE-0AUT
Виробник: Micron Technology Inc.
Description: IC FLASH 128MBIT SPI 133MHZ 8SO
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 1.8ms
Memory Interface: SPI - Quad I/O
Access Time: 5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+296.04 грн
10+265.46 грн
25+257.55 грн
40+237.92 грн
80+232.30 грн
230+223.80 грн
440+215.05 грн
1800+204.21 грн
Мінімальне замовлення: 2
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N25Q032A11EF440F TR N25Q032A.pdf
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 8UPDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-UPDFN (4x3) (MLP8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV740
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13ESEC0E
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 108MHZ 8SOP2
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP2
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV140
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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N25Q032A13EV741
Виробник: Micron Technology Inc.
Description: IC FLASH 32MBIT SPI 108MHZ
Packaging: Bulk
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Part Status: Obsolete
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 8M x 4
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MT41K2G4TRF-125:E TR MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x11.5)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 4
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MT41K2G8KJR-125:A MT41K4G4,%20MT41K2G8.pdf
MT41K2G8KJR-125:A
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 8
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MT41K2G8KJR-125:A TR MT41K4G4,%20MT41K2G8.pdf
MT41K2G8KJR-125:A TR
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (9.5x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 13.5 ns
Memory Organization: 2G x 8
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MT41K2G4RKB-107 C:N TR MT41K2G4,MT41K1G8_Rev.K_Aug2018_DS.pdf
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (8x10.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 2G x 4
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