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MAP5KE48Ae3 MAP5KE48Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 48VWM 77.4VC DO204AL
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MAP5KE8.0CA MAP5KE8.0CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 8VWM 13.6VC DO204AL
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MP5KE160CA MP5KE160CA Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE16Ae3 MP5KE16Ae3 Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MP5KE22A MP5KE22A Microsemi Corporation MP5KE5.0A-170CA(e3).pdf Description: TVS DIODE 22VWM 35.5VC DO204AL
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MP5KE60A MP5KE60A Microsemi Corporation MP5KE5.0A-170CA(e3).pdf Description: TVS DIODE 60VWM 96.8VC DO204AL
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MXLP5KE26CA MXLP5KE26CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 26VWM 42.1VC DO204AL
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MXLP5KE26CAe3 MXLP5KE26CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 26VWM 42.1VC DO204AL
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MXP5KE14CAe3 MXP5KE14CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 14VWM 23.2VC DO204AL
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MXP5KE64CA MXP5KE64CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 64VWM 103VC DO204AL
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MAP5KE54A MAP5KE54A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE7.5Ae3 MAP5KE7.5Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 7.5VWM 12.9VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MP5KE85A MP5KE85A Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 85VWM 137VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MXLP5KE6.5CAe3 MXLP5KE6.5CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 6.5VWM 11.2VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.7A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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APTGF50VDA120T3G APTGF50VDA120T3G Microsemi Corporation APTGF50VDA120T3.pdf Description: IGBT MODULE 1200V 70A 312W SP3
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MP5KE54A MP5KE54A Microsemi Corporation MP5KE5.0A-170CA(e3).pdf Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APTGT30SK170T1G Microsemi Corporation High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1700V 45A 210W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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APTGT30A170D1G Microsemi Corporation Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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APTGT30DA170T1G Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=14813 Description: IGBT MODULE 1700V 45A 210W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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APTGT30DA170D1G Microsemi Corporation APTGT30A170D1G.pdf Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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APTGT30SK170D1G Microsemi Corporation APTGT30SK170D1.pdf Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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UFT7260SM1A Microsemi Corporation Description: DIODE MODULE 600V 35A SM1
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APTGF180DU60TG Microsemi Corporation APTGF180DU60TG.pdf Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF180DH60G APTGF180DH60G Microsemi Corporation APTGF180DH60G.pdf Description: IGBT MODULE 600V 220A 833W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGT100A60TG Microsemi Corporation APTGT100A60TG.pdf Description: IGBT MODULE 600V 150A 340W SP4
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APTGT75DH120TG Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=7948 Description: IGBT MODULE 1200V 110A 357W SP4
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APTGF150DA120TG APTGF150DA120TG Microsemi Corporation APTGF150DA120TG.pdf Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF180DA60TG Microsemi Corporation APTGF180DA60TG.pdf Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF50DH120TG Microsemi Corporation APTGF50DH120TGf.pdf Description: IGBT MODULE 1200V 75A 312W SP4
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APTGF90DU60TG APTGF90DU60TG Microsemi Corporation APTGF90DU60TG.pdf Description: IGBT MODULE 600V 110A 416W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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APTGT100DA120TG Microsemi Corporation 7673-aptgt100da120tg-datasheet Description: IGBT MODULE 1200V 140A 480W SP4
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APTGF150DU120TG APTGF150DU120TG Microsemi Corporation APTGF150DU120TG.pdf Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF50DA120TG Microsemi Corporation APTGF50DA120TG.pdf Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
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APTGF90DH60TG Microsemi Corporation APTGF90DH60TG.pdf Description: IGBT MODULE 600V 110A 416W SP4
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APTGT50DA170TG Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=14813 Description: IGBT MODULE 1700V 75A 312W SP4
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APTGT100SK60TG Microsemi Corporation APTGT100SK60TG.pdf Description: IGBT MODULE 600V 150A 340W SP4
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APTGF50SK120TG Microsemi Corporation APTGF50SK120TG.pdf Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
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MXP5KE16CA MXP5KE16CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MP5KE16CAe3 MP5KE16CAe3 Microsemi Corporation MP5KE5.0A-170CA(e3).pdf Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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1N5376/TR12 1N5376/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ae3/TR13 1N5376Ae3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376B/TR12 1N5376B/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Be3/TR12 1N5376Be3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Be3/TR13 1N5376Be3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376C/TR12 1N5376C/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376e3/TR12 1N5376e3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376e3/TR13 1N5376e3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Be3/TR8 1N5376Be3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376C/TR8 1N5376C/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ce3/TR8 1N5376Ce3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376e3/TR8 1N5376e3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ae3/TR12 1N5376Ae3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ce3/TR13 1N5376Ce3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376/TR8 1N5376/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376A/TR8 1N5376A/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ae3/TR8 1N5376Ae3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376B/TR8 1N5376B/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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LX1973AIDU LX1973AIDU Microsemi Corporation 9096-lx1973a-pdf Description: SENSOR OPT 580NM AMBIENT 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Wavelength: 580nm
Output Type: Voltage
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 8-MSOP
Proximity Detection: No
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SMBJ5335A/TR13 SMBJ5335A/TR13 Microsemi Corporation 124875-lds-0246-2-datasheet Description: DIODE ZENER 3.9V 5W SMBJ
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SMBJ5335B/TR13 SMBJ5335B/TR13 Microsemi Corporation 124875-lds-0246-2-datasheet Description: DIODE ZENER 3.9V 5W SMBJ
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MAP5KE48Ae3 11043-p5ke-datasheet
MAP5KE48Ae3
Виробник: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
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MAP5KE8.0CA 11043-p5ke-datasheet
MAP5KE8.0CA
Виробник: Microsemi Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AL
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MP5KE160CA MP5KE5.0A-170CA%28e3%29.pdf
MP5KE160CA
Виробник: Microsemi Corporation
Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE16Ae3 MP5KE5.0A-170CA%28e3%29.pdf
MP5KE16Ae3
Виробник: Microsemi Corporation
Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MP5KE22A MP5KE5.0A-170CA(e3).pdf
MP5KE22A
Виробник: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
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MP5KE60A MP5KE5.0A-170CA(e3).pdf
MP5KE60A
Виробник: Microsemi Corporation
Description: TVS DIODE 60VWM 96.8VC DO204AL
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MXLP5KE26CA 11043-p5ke-datasheet
MXLP5KE26CA
Виробник: Microsemi Corporation
Description: TVS DIODE 26VWM 42.1VC DO204AL
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MXLP5KE26CAe3 11043-p5ke-datasheet
MXLP5KE26CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 26VWM 42.1VC DO204AL
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MXP5KE14CAe3 11043-p5ke-datasheet
MXP5KE14CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 14VWM 23.2VC DO204AL
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MXP5KE64CA 11043-p5ke-datasheet
MXP5KE64CA
Виробник: Microsemi Corporation
Description: TVS DIODE 64VWM 103VC DO204AL
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MAP5KE54A 11043-p5ke-datasheet
MAP5KE54A
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE7.5Ae3 11043-p5ke-datasheet
MAP5KE7.5Ae3
Виробник: Microsemi Corporation
Description: TVS DIODE 7.5VWM 12.9VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MP5KE85A MP5KE5.0A-170CA%28e3%29.pdf
MP5KE85A
Виробник: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MXLP5KE6.5CAe3 11043-p5ke-datasheet
MXLP5KE6.5CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 6.5VWM 11.2VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.7A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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APTGF50VDA120T3G APTGF50VDA120T3.pdf
APTGF50VDA120T3G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 70A 312W SP3
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MP5KE54A MP5KE5.0A-170CA(e3).pdf
MP5KE54A
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APTGT30SK170T1G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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APTGT30A170D1G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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APTGT30DA170T1G index.php?option=com_docman&task=doc_download&gid=14813
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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APTGT30DA170D1G APTGT30A170D1G.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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APTGT30SK170D1G APTGT30SK170D1.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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UFT7260SM1A
Виробник: Microsemi Corporation
Description: DIODE MODULE 600V 35A SM1
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APTGF180DU60TG APTGF180DU60TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF180DH60G APTGF180DH60G.pdf
APTGF180DH60G
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 220A 833W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGT100A60TG APTGT100A60TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP4
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APTGT75DH120TG index.php?option=com_docman&task=doc_download&gid=7948
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 110A 357W SP4
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APTGF150DA120TG APTGF150DA120TG.pdf
APTGF150DA120TG
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF180DA60TG APTGF180DA60TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
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APTGF50DH120TG APTGF50DH120TGf.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
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APTGF90DU60TG APTGF90DU60TG.pdf
APTGF90DU60TG
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 110A 416W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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APTGT100DA120TG 7673-aptgt100da120tg-datasheet
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 140A 480W SP4
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APTGF150DU120TG APTGF150DU120TG.pdf
APTGF150DU120TG
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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APTGF50DA120TG APTGF50DA120TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
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APTGF90DH60TG APTGF90DH60TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 110A 416W SP4
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APTGT50DA170TG index.php?option=com_docman&task=doc_download&gid=14813
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 75A 312W SP4
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APTGT100SK60TG APTGT100SK60TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP4
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APTGF50SK120TG APTGF50SK120TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
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MXP5KE16CA 11043-p5ke-datasheet
MXP5KE16CA
Виробник: Microsemi Corporation
Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MP5KE16CAe3 MP5KE5.0A-170CA(e3).pdf
MP5KE16CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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1N5376/TR12 1N5333B-88B.pdf
1N5376/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ae3/TR13 1N5333B-88B.pdf
1N5376Ae3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376B/TR12 1N5333B-88B.pdf
1N5376B/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Be3/TR12 1N5333B-88B.pdf
1N5376Be3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Be3/TR13 1N5333B-88B.pdf
1N5376Be3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376C/TR12 1N5333B-88B.pdf
1N5376C/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376e3/TR12 1N5333B-88B.pdf
1N5376e3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376e3/TR13 1N5333B-88B.pdf
1N5376e3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Be3/TR8 1N5333B-88B.pdf
1N5376Be3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376C/TR8 1N5333B-88B.pdf
1N5376C/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ce3/TR8 1N5333B-88B.pdf
1N5376Ce3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376e3/TR8 1N5333B-88B.pdf
1N5376e3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ae3/TR12 1N5333B-88B.pdf
1N5376Ae3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ce3/TR13 1N5333B-88B.pdf
1N5376Ce3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376/TR8 1N5333B-88B.pdf
1N5376/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376A/TR8 1N5333B-88B.pdf
1N5376A/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376Ae3/TR8 1N5333B-88B.pdf
1N5376Ae3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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1N5376B/TR8 1N5333B-88B.pdf
1N5376B/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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LX1973AIDU 9096-lx1973a-pdf
LX1973AIDU
Виробник: Microsemi Corporation
Description: SENSOR OPT 580NM AMBIENT 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Wavelength: 580nm
Output Type: Voltage
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 8-MSOP
Proximity Detection: No
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SMBJ5335A/TR13 124875-lds-0246-2-datasheet
SMBJ5335A/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.9V 5W SMBJ
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SMBJ5335B/TR13 124875-lds-0246-2-datasheet
SMBJ5335B/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.9V 5W SMBJ
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