Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11188) > Сторінка 185 з 187
| Фото | Назва | Виробник | Інформація |
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JANSP2N3634UB | Microsemi Corporation |
Description: TRANS PNP 140V 10UA UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
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1.5KE47CA | Microsemi Corporation |
 Description: TVS DIODE 40.2VWM 64.8VC CASE-1Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 23.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: CASE-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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| 5817SMGE3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 20V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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| 5818SMGe3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
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| 5817SMG/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 20V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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| 5818SMG/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
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UC2844AD | Microsemi Corporation |
 Description: IC REG CTRLR PWM CM 14-SOICPackaging: Bag Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Buck, Flyback, Forward Voltage - Supply (Vcc/Vdd): 10V ~ 30V Supplier Device Package: 14-SOIC Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 48% Clock Sync: No Number of Outputs: 1 |
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1N5378B | Microsemi Corporation |
Description: DIODE ZENER 100V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 72 V |
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SMLJ40A | Microsemi Corporation |
Description: TVS DIODE 40VWM 64.5VC DO214AB Packaging: Tube Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 46.4A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 300W Power Line Protection: No |
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1N5348B | Microsemi Corporation |
Description: DIODE ZENER 11V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 8 V |
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MXSMBG2K4.0 | Microsemi Corporation |
Description: TVS DIODE 4VWM 6.3VC DO214AA Packaging: Bulk Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 4V Supplier Device Package: DO-214AA (SMBG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 6.3V Power - Peak Pulse: 2000W (2kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXSMBJ2K3.3 | Microsemi Corporation |
Description: TVS DIODE 3.3VWM 5.8VC DO214AA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.6V Voltage - Clamping (Max) @ Ipp: 5.8V Power - Peak Pulse: 2000W (2kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| 1N6301e3/TR13 | Microsemi Corporation |
Description: TVS DIODE 138VWM 244VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 138V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 153V Voltage - Clamping (Max) @ Ipp: 244V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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| APTGT100A602G | Microsemi Corporation |
Description: IGBT MODULE 600V 150A 340W SP2 Packaging: Bulk Package / Case: SP2 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP2 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
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| APTGT100DH60T3G | Microsemi Corporation |
Description: IGBT MODULE 600V 150A 340W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Through Hole Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
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| UMA5817-T7 | Microsemi Corporation |
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE Packaging: Tape & Reel (TR) Package / Case: Ultramite™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Ultramite™ Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
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| UMA5818 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE Packaging: Tape & Reel (TR) Package / Case: Ultramite™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Ultramite™ Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
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1N4734A | Microsemi Corporation |
Description: DIODE ZENER 5.6V 1W DO204AL Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
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| JANTX1N4959D | Microsemi Corporation |
Description: DIODE ZENER 11V 5W E-AXIAL Tolerance: ±1% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: E, Axial Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V Qualification: MIL-PRF-19500/435 |
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JANTX1N4959DUS | Microsemi Corporation |
Description: DIODE ZENER 11V 5W D5B Tolerance: ±1% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V Qualification: MIL-PRF-19500/435 |
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| APTGT75TA60PG | Microsemi Corporation |
Description: IGBT MODULE 600V 100A 250W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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SBT2535 | Microsemi Corporation |
Description: DIODE SCHOTTKY 35V 25A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 25A Supplier Device Package: TO-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A |
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| MAPLAD6.5KP150Ae3 | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MAPLAD6.5KP150A | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLPLAD6.5KP150Ae3 | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLPLAD6.5KP150A | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXPLAD6.5KP150A | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MSKD36-08 | Microsemi Corporation |
Description: DIODE MODULE GP 800V 36A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 36A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 800 V |
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| MSAD36-08 | Microsemi Corporation |
Description: DIODE MODULE GP 800V 36A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 36A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 800 V |
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1N5934AG | Microsemi Corporation |
Description: DIODE ZENER 24V 1.25W DO204AL Tolerance: ±10% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V |
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1N5934CG | Microsemi Corporation |
Description: DIODE ZENER 24V 1.25W DO204AL Tolerance: ±2% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V |
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1N5956BG | Microsemi Corporation |
Description: DIODE ZENER 200V 1.25W DO204AL Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 152 V |
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HS24515E3 | Microsemi Corporation |
Description: DIODE SCHOTTKY 15V 240A HALF-PAK Packaging: Tube Package / Case: HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 21700pF @ 5V, 1MHz Current - Average Rectified (Io): 240A Supplier Device Package: HALF-PAK Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A Current - Reverse Leakage @ Vr: 150 mA @ 15 V |
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1N5919BG | Microsemi Corporation |
Description: DIODE ZENER 5.6V 1.25W DO204AL Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
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| 090-44550-01 | Microsemi Corporation |
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS Packaging: Bulk Package / Case: 8-DIP Module Mounting Type: Through Hole Operating Temperature: -40°C ~ 75°C Voltage - Supply: 4.5V ~ 32V Differential - Input:Output: No/No PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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| 090-44500-000 | Microsemi Corporation |
Description: EVAL BOARD FOR MAC-SA5X Packaging: Bulk Function: Miniature Atomic Clock (MAC) Type: Timing Contents: Board(s), Cable(s), Power Supply, Accessories Utilized IC / Part: MAC-SA5X Secondary Attributes: On-Board LEDs |
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| APTGT50DH60TG | Microsemi Corporation |
Description: IGBT MODULE 600V 80A 176W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
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1N5345B | Microsemi Corporation |
Description: DIODE ZENER 8.7V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.7 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V |
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1N5356B | Microsemi Corporation |
Description: DIODE ZENER 19V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 19 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V |
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| JANTX1N4969C | Microsemi Corporation |
Description: DIODE ZENER 30V 5W E-AXIAL Tolerance: ±2% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: E, Axial Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V Qualification: MIL-PRF-19500/435 |
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В кошику од. на суму грн. | |||||
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A2F060M3E-FG256 | Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 256FBGA Packaging: Tray Package / Case: 256-LBGA Speed: 80MHz RAM Size: 16KB Operating Temperature: 0°C ~ 85°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 256-FPBGA (17x17) Architecture: MCU, FPGA Flash Size: 128KB |
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A2F060M3E-FG256I | Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 256FBGA Packaging: Tray Package / Case: 256-LBGA Speed: 80MHz RAM Size: 16KB Operating Temperature: -40°C ~ 100°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 256-FPBGA (17x17) Architecture: MCU, FPGA Flash Size: 128KB |
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В кошику од. на суму грн. | ||||
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A2F060M3E-FG256M | Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 256FBGA Packaging: Tray Package / Case: 256-LBGA Speed: 80MHz RAM Size: 16KB Operating Temperature: -55°C ~ 125°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 256-FPBGA (17x17) Architecture: MCU, FPGA Flash Size: 128KB |
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В кошику од. на суму грн. | ||||
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1N5349B | Microsemi Corporation |
Description: DIODE ZENER 12V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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1N5349B | Microsemi Corporation |
Description: DIODE ZENER 12V 5W T18 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V |
на замовлення 7509 шт: термін постачання 21-31 дні (днів) |
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MRF555 | Microsemi Corporation |
Description: RF TRANS NPN 16V POWER MACRO Packaging: Bulk Package / Case: Power Macro Mounting Type: Surface Mount Transistor Type: NPN Gain: 11dB ~ 13dB Power - Max: 3W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 16V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Supplier Device Package: Power Macro |
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В кошику од. на суму грн. | ||||
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MRF553T | Microsemi Corporation |
Description: RF TRNS NPN 16V 175MHZ PWR MACRO Packaging: Bulk Package / Case: Power Macro Mounting Type: Surface Mount Transistor Type: NPN Gain: 11.5dB Power - Max: 3W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 16V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Frequency - Transition: 175MHz Supplier Device Package: Power Macro |
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В кошику од. на суму грн. | ||||
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MRF553G | Microsemi Corporation |
Description: RF TRNS NPN 16V 175MHZ PWR MACRO Packaging: Bulk Package / Case: Power Macro Mounting Type: Surface Mount Transistor Type: NPN Gain: 11dB ~ 13dB Power - Max: 3W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 16V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Frequency - Transition: 175MHz Supplier Device Package: Power Macro |
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В кошику од. на суму грн. | ||||
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MRF555T | Microsemi Corporation |
Description: RF TRANS NPN 16V POWER MACRO Packaging: Tape & Reel (TR) Package / Case: Power Macro Mounting Type: Surface Mount Transistor Type: NPN Gain: 11dB ~ 12.5dB Power - Max: 3W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 16V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Supplier Device Package: Power Macro |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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MRF555T | Microsemi Corporation |
Description: RF TRANS NPN 16V POWER MACRO Packaging: Cut Tape (CT) Package / Case: Power Macro Mounting Type: Surface Mount Transistor Type: NPN Gain: 11dB ~ 12.5dB Power - Max: 3W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 16V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Supplier Device Package: Power Macro |
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 |
APT20M38BVFRG | Microsemi Corporation |
Description: MOSFET N-CH 200V 67A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V |
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| APTC60AM42F2G | Microsemi Corporation |
Description: MOSFET 2N-CH 600V 66A SP2 Packaging: Tray Package / Case: SP2 Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 66A Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP2 |
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В кошику од. на суму грн. | |||||
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MP5KE8.5Ae3 | Microsemi Corporation |
Description: TVS DIODE 8.5VWM 14.4V DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34.7A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| A1280A-1PG176M | Microsemi Corporation |
Description: IC FPGA 140 I/O 176CPGA Packaging: Tray Package / Case: 176-BCPGA Mounting Type: Surface Mount Number of Gates: 8000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 176-CPGA (39.88x39.88) Number of LABs/CLBs: 1232 Number of I/O: 140 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||
| A1280A-PG176C | Microsemi Corporation |
Description: IC FPGA 140 I/O 176CPGA Packaging: Tray Package / Case: 176-BCPGA Mounting Type: Through Hole Number of Gates: 8000 Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 176-CPGA (39.88x39.88) Number of LABs/CLBs: 1232 Number of I/O: 140 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||
| A1280A-1PG176B | Microsemi Corporation |
Description: IC FPGA 140 I/O 176CPGA Packaging: Tray Package / Case: 176-BCPGA Mounting Type: Through Hole Number of Gates: 8000 Operating Temperature: -55°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 176-CPGA (39.88x39.88) Number of LABs/CLBs: 1232 Number of I/O: 140 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||
| A1280A-1PG176C | Microsemi Corporation |
Description: IC FPGA 140 I/O 176CPGA Packaging: Tray Package / Case: 176-BCPGA Mounting Type: Through Hole Number of Gates: 8000 Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 176-CPGA (39.88x39.88) Number of LABs/CLBs: 1232 Number of I/O: 140 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||
| A1280A-PG176M | Microsemi Corporation |
Description: IC FPGA 140 I/O 176CPGA Packaging: Tray Package / Case: 176-BCPGA Mounting Type: Through Hole Number of Gates: 8000 Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 176-CPGA (39.88x39.88) Number of LABs/CLBs: 1232 Number of I/O: 140 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||
| A1280A-PG176B | Microsemi Corporation |
Description: IC FPGA 140 I/O 176CPGA Packaging: Tray Package / Case: 176-BCPGA Mounting Type: Through Hole Number of Gates: 8000 Operating Temperature: -55°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 176-CPGA (39.88x39.88) Number of LABs/CLBs: 1232 Number of I/O: 140 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||
| 2N6382 | Microsemi Corporation |
Description: TRANS PNP 120V 50A TO-63 Packaging: Bulk Package / Case: TO-211MB, TO-63-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-63 Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. |
| JANSP2N3634UB |
Виробник: Microsemi Corporation
Description: TRANS PNP 140V 10UA UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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В кошику
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| 1.5KE47CA |
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Виробник: Microsemi Corporation
Description: TVS DIODE 40.2VWM 64.8VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 40.2VWM 64.8VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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В кошику
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| 5817SMGE3/TR13 |
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Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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В кошику
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| 5818SMGe3/TR13 |
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Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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В кошику
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| 5817SMG/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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| 5818SMG/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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| UC2844AD | |
|
Виробник: Microsemi Corporation
Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Bag
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Bag
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
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| 1N5378B | |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 100V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
Description: DIODE ZENER 100V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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В кошику
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| SMLJ40A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tube
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tube
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.4A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 300W
Power Line Protection: No
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В кошику
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| 1N5348B | |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 11V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 8 V
Description: DIODE ZENER 11V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 8 V
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| MXSMBG2K4.0 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 4VWM 6.3VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 4VWM 6.3VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MXSMBJ2K3.3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 3.3VWM 5.8VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 3.3VWM 5.8VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| 1N6301e3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 138VWM 244VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 138VWM 244VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| APTGT100A602G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
Description: IGBT MODULE 600V 150A 340W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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| APTGT100DH60T3G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
Description: IGBT MODULE 600V 150A 340W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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| UMA5817-T7 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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| UMA5818 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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| 1N4734A |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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| JANTX1N4959D |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 11V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 11V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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| JANTX1N4959DUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 11V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 11V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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| APTGT75TA60PG |
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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| SBT2535 |
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 35V 25A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Description: DIODE SCHOTTKY 35V 25A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
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| MAPLAD6.5KP150Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MAPLAD6.5KP150A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MXLPLAD6.5KP150Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MXLPLAD6.5KP150A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MXPLAD6.5KP150A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MSKD36-08 |
|
Виробник: Microsemi Corporation
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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| MSAD36-08 |
|
Виробник: Microsemi Corporation
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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| 1N5934AG |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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| 1N5934CG |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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| 1N5956BG |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 200V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Description: DIODE ZENER 200V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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| HS24515E3 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 15V 240A HALF-PAK
Packaging: Tube
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: HALF-PAK
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A
Current - Reverse Leakage @ Vr: 150 mA @ 15 V
Description: DIODE SCHOTTKY 15V 240A HALF-PAK
Packaging: Tube
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: HALF-PAK
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A
Current - Reverse Leakage @ Vr: 150 mA @ 15 V
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| 1N5919BG |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.6V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.6V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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| 090-44550-01 |
|
Виробник: Microsemi Corporation
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 8-DIP Module
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 75°C
Voltage - Supply: 4.5V ~ 32V
Differential - Input:Output: No/No
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 8-DIP Module
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 75°C
Voltage - Supply: 4.5V ~ 32V
Differential - Input:Output: No/No
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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| 090-44500-000 |
|
Виробник: Microsemi Corporation
Description: EVAL BOARD FOR MAC-SA5X
Packaging: Bulk
Function: Miniature Atomic Clock (MAC)
Type: Timing
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: MAC-SA5X
Secondary Attributes: On-Board LEDs
Description: EVAL BOARD FOR MAC-SA5X
Packaging: Bulk
Function: Miniature Atomic Clock (MAC)
Type: Timing
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: MAC-SA5X
Secondary Attributes: On-Board LEDs
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| APTGT50DH60TG |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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| 1N5345B |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 8.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V
Description: DIODE ZENER 8.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V
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| 1N5356B |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 19V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V
Description: DIODE ZENER 19V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V
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| JANTX1N4969C |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 30V 5W E-AXIAL
Tolerance: ±2%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 30V 5W E-AXIAL
Tolerance: ±2%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
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| A2F060M3E-FG256 |
|
Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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| A2F060M3E-FG256I |
|
Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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| A2F060M3E-FG256M |
|
Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -55°C ~ 125°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -55°C ~ 125°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 256-FPBGA (17x17)
Architecture: MCU, FPGA
Flash Size: 128KB
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| 1N5349B | |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 12V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
Description: DIODE ZENER 12V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 162.83 грн |
| 1N5349B | |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 12V 5W T18
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
Description: DIODE ZENER 12V 5W T18
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 8.6 V
на замовлення 7509 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.46 грн |
| 100+ | 156.80 грн |
| MRF555 |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 16V POWER MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 13dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Supplier Device Package: Power Macro
Description: RF TRANS NPN 16V POWER MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 13dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Supplier Device Package: Power Macro
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| MRF553T |
|
Виробник: Microsemi Corporation
Description: RF TRNS NPN 16V 175MHZ PWR MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: Power Macro
Description: RF TRNS NPN 16V 175MHZ PWR MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: Power Macro
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| MRF553G |
|
Виробник: Microsemi Corporation
Description: RF TRNS NPN 16V 175MHZ PWR MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 13dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: Power Macro
Description: RF TRNS NPN 16V 175MHZ PWR MACRO
Packaging: Bulk
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 13dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: Power Macro
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| MRF555T |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 16V POWER MACRO
Packaging: Tape & Reel (TR)
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 12.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: Power Macro
Description: RF TRANS NPN 16V POWER MACRO
Packaging: Tape & Reel (TR)
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 12.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: Power Macro
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| MRF555T |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 16V POWER MACRO
Packaging: Cut Tape (CT)
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 12.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: Power Macro
Description: RF TRANS NPN 16V POWER MACRO
Packaging: Cut Tape (CT)
Package / Case: Power Macro
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11dB ~ 12.5dB
Power - Max: 3W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 16V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Supplier Device Package: Power Macro
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| APT20M38BVFRG |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 67A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
Description: MOSFET N-CH 200V 67A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
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| APTC60AM42F2G |
|
Виробник: Microsemi Corporation
Description: MOSFET 2N-CH 600V 66A SP2
Packaging: Tray
Package / Case: SP2
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 66A
Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP2
Description: MOSFET 2N-CH 600V 66A SP2
Packaging: Tray
Package / Case: SP2
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 66A
Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP2
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| MP5KE8.5Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 8.5VWM 14.4V DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 8.5VWM 14.4V DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| A1280A-1PG176M |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Surface Mount
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Surface Mount
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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| A1280A-PG176C |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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| A1280A-1PG176B |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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| A1280A-1PG176C |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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| A1280A-PG176M |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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| A1280A-PG176B |
|
Виробник: Microsemi Corporation
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
Description: IC FPGA 140 I/O 176CPGA
Packaging: Tray
Package / Case: 176-BCPGA
Mounting Type: Through Hole
Number of Gates: 8000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 176-CPGA (39.88x39.88)
Number of LABs/CLBs: 1232
Number of I/O: 140
DigiKey Programmable: Not Verified
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| 2N6382 |
Виробник: Microsemi Corporation
Description: TRANS PNP 120V 50A TO-63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 250 W
Description: TRANS PNP 120V 50A TO-63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-63
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 250 W
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