Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11109) > Сторінка 180 з 186
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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JANSP2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| JANS2N2221AUA | Microsemi Corporation |
 Description: TRANS NPN 50V 0.8A UAPackaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW Qualification: MIL-PRF-19500/255 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |
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JANSH2N2221A | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/255 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Grade: Military Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
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JANSH2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO-18 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/255 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Grade: Military Supplier Device Package: TO-18 (TO-206AA) |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| JANSH2N2221AUA | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UA Qualification: MIL-PRF-19500/255 Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Grade: Military Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |
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JANSH2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UB Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk Qualification: MIL-PRF-19500/255 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Grade: Military |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
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JANSH2N2221AUBC | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UBC Qualification: MIL-PRF-19500/255 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Grade: Military Supplier Device Package: UBC DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
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Jantxv2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UB Qualification: MIL-PRF-19500/255 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Grade: Military Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
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MXPLAD130KP275CA | Microsemi Corporation |
Description: TVS DIODE 275VWM 445VC PLAD Package / Case: Nonstandard SMD Packaging: Bulk Power Line Protection: No Power - Peak Pulse: 130000W (130kW) Voltage - Clamping (Max) @ Ipp: 445V Voltage - Breakdown (Min): 300V Bidirectional Channels: 1 Supplier Device Package: PLAD Voltage - Reverse Standoff (Typ): 275V (Max) Current - Peak Pulse (10/1000µs): 292A Applications: General Purpose Operating Temperature: -55°C ~ 150°C Type: Zener Mounting Type: Surface Mount |
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MXPLAD130KP275CAE3 | Microsemi Corporation |
Description: TVS DIODE 275VWM 445VC PLAD Type: Zener Mounting Type: Surface Mount Package / Case: Nonstandard SMD Packaging: Bulk Power Line Protection: No Power - Peak Pulse: 130000W (130kW) Voltage - Clamping (Max) @ Ipp: 445V Voltage - Breakdown (Min): 300V Bidirectional Channels: 1 Supplier Device Package: PLAD Voltage - Reverse Standoff (Typ): 275V (Max) Current - Peak Pulse (10/1000µs): 292A Applications: General Purpose Operating Temperature: -55°C ~ 150°C |
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MXPLAD130KP275CVE3 | Microsemi Corporation |
Description: TVS DIODE 275VWM 400VC PLAD Power Line Protection: No Power - Peak Pulse: 130000W (130kW) Voltage - Clamping (Max) @ Ipp: 400V Voltage - Breakdown (Min): 300V Bidirectional Channels: 1 Supplier Device Package: PLAD Voltage - Reverse Standoff (Typ): 275V (Max) Current - Peak Pulse (10/1000µs): 292A Applications: General Purpose Operating Temperature: -55°C ~ 150°C Type: Zener Mounting Type: Surface Mount Package / Case: Nonstandard SMD Packaging: Bulk |
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| TPR1000 | Microsemi Corporation |
Description: RF TRANS NPN 65V 1.09GHZ 55KV Packaging: Bulk Package / Case: 55KV Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 6dB Power - Max: 2900W Current - Collector (Ic) (Max): 80A Voltage - Collector Emitter Breakdown (Max): 65V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 1.09GHz Supplier Device Package: 55KV |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |
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LX8386A-33CDD | Microsemi Corporation |
Description: IC REG LIN 3.3V 1.5A TO263 PWR Current - Output: 1.5A Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Packaging: Tube Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 1.3V @ 1.5A PSRR: 83dB (120Hz) Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: TO-263, Power Number of Regulators: 1 Voltage - Input (Max): 10V Current - Quiescent (Iq): 10 mA Output Configuration: Positive Operating Temperature: 0°C ~ 125°C |
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LX8386A-33CP | Microsemi Corporation |
Description: IC REG LIN 3.3V 1.5A TO220 PWR Output Type: Fixed Package / Case: TO-220-3 Packaging: Tube Voltage Dropout (Max): 1.3V @ 1.5A PSRR: 83dB (120Hz) Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: TO-220, Power Number of Regulators: 1 Voltage - Input (Max): 10V Current - Quiescent (Iq): 10 mA Output Configuration: Positive Operating Temperature: 0°C ~ 125°C Current - Output: 1.5A Mounting Type: Through Hole Protection Features: Over Current, Over Temperature |
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| 681-2D, 2N, 2P | Microsemi Corporation |
Description: DIODE MODULE GP 200V 15A ND Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: Nd Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Nd Packaging: Bulk |
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MXLP5KE48A | Microsemi Corporation |
Description: TVS DIODE 48VWM 77.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.5A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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CPT30045 | Microsemi Corporation |
Description: DIODE MOD SCHOTT 45V 150A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A Current - Reverse Leakage @ Vr: 4 mA @ 45 V |
товару немає в наявності |
Мінімальне замовлення: 14 шт В кошику од. на суму грн. |
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CPT30050 | Microsemi Corporation |
Description: DIODE MOD SCHOTT 50V 150A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A Current - Reverse Leakage @ Vr: 4 mA @ 50 V |
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CPT50145 | Microsemi Corporation |
Description: DIODE MOD SCHOTT 45V 250A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A Current - Reverse Leakage @ Vr: 12 mA @ 45 V |
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CPT30060 | Microsemi Corporation |
Description: DIODE MOD SCHOTT 60V 150A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A Current - Reverse Leakage @ Vr: 4 mA @ 60 V |
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CPT600150D | Microsemi Corporation |
Description: DIODE MOD SCHOT 150V 300A 2TOWER Packaging: Bulk Package / Case: MD3CC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A Current - Reverse Leakage @ Vr: 7 mA @ 150 V |
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APT10043JVR | Microsemi Corporation |
Description: MOSFET N-CH 1000V 22A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tj) Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. |
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JANSM2N3634 | Microsemi Corporation |
Description: TRANS PNP 140V 10UA TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
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JANSM2N3634L | Microsemi Corporation |
Description: TRANS PNP 140V 10UA TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: TO-5AA Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
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JANSP2N3634 | Microsemi Corporation |
Description: TRANS PNP 140V 10UA TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
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JANSP2N3634L | Microsemi Corporation |
Description: TRANS PNP 140V 10UA TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: TO-5AA Grade: Military Current - Collector (Ic) (Max): 10 µA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
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JANSP2N3634UB | Microsemi Corporation |
Description: TRANS PNP 140V 10UA UB DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk Qualification: MIL-PRF-19500/357 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 140 V Current - Collector (Ic) (Max): 10 µA Grade: Military Supplier Device Package: UB |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| 5817SMGE3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 20V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| 5818SMGe3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| 5817SMG/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 20V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| 5818SMG/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A DO215AA Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
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UC2844AD | Microsemi Corporation |
 Description: IC REG CTRLR PWM CM 14-SOICPackaging: Bag Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Buck, Flyback, Forward Voltage - Supply (Vcc/Vdd): 10V ~ 30V Supplier Device Package: 14-SOIC Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 48% Clock Sync: No Number of Outputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
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1N5378B | Microsemi Corporation |
Description: DIODE ZENER 100V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 72 V |
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В кошику од. на суму грн. |
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MXSMBG2K4.0 | Microsemi Corporation |
Description: TVS DIODE 4VWM 6.3VC DO214AA Packaging: Bulk Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 4V Supplier Device Package: DO-214AA (SMBG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 6.3V Power - Peak Pulse: 2000W (2kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXSMBJ2K3.3 | Microsemi Corporation |
Description: TVS DIODE 3.3VWM 5.8VC DO214AA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.6V Voltage - Clamping (Max) @ Ipp: 5.8V Power - Peak Pulse: 2000W (2kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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В кошику од. на суму грн. |
| 1N6301e3/TR13 | Microsemi Corporation |
Description: TVS DIODE 138VWM 244VC CASE-1 Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Voltage - Clamping (Max) @ Ipp: 244V Voltage - Breakdown (Min): 153V Unidirectional Channels: 1 Supplier Device Package: CASE-1 Voltage - Reverse Standoff (Typ): 138V Current - Peak Pulse (10/1000µs): 6.2A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) |
товару немає в наявності |
Мінімальне замовлення: 10800 шт В кошику од. на суму грн. | |
| APTGT100A602G | Microsemi Corporation |
Description: IGBT MODULE 600V 150A 340W SP2 Packaging: Bulk Package / Case: SP2 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP2 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| APTGT100DH60T3G | Microsemi Corporation |
Description: IGBT MODULE 600V 150A 340W SP3 Package / Case: SP3 Packaging: Bulk Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 340 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 150 A IGBT Type: Trench Field Stop Supplier Device Package: SP3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Asymmetrical Bridge Input: Standard Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
| UMA5817-T7 | Microsemi Corporation |
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE Packaging: Tape & Reel (TR) Package / Case: Ultramite™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Ultramite™ Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| UMA5818 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE Packaging: Tape & Reel (TR) Package / Case: Ultramite™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Ultramite™ Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| JANTX1N4959D | Microsemi Corporation |
Description: DIODE ZENER 11V 5W E-AXIAL Tolerance: ±1% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: E, Axial Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
 |
JANTX1N4959DUS | Microsemi Corporation |
Description: DIODE ZENER 11V 5W D5B Tolerance: ±1% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| APTGT75TA60PG | Microsemi Corporation |
Description: IGBT MODULE 600V 100A 250W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |
 |
SBT2535 | Microsemi Corporation |
Description: DIODE SCHOTTKY 35V 25A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 25A Supplier Device Package: TO-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| MAPLAD6.5KP150Ae3 | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 117 шт В кошику од. на суму грн. | |
| MAPLAD6.5KP150A | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 112 шт В кошику од. на суму грн. | |
 |
MXLPLAD6.5KP150Ae3 | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
|
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MXLPLAD6.5KP150A | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
|
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MXPLAD6.5KP150A | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.7A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
 |
MSKD36-08 | Microsemi Corporation |
Description: DIODE MODULE GP 800V 36A D1 Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: D1 Packaging: Bulk Current - Reverse Leakage @ Vr: 5 mA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Voltage - DC Reverse (Vr) (Max): 800 V Supplier Device Package: D1 Current - Average Rectified (Io) (per Diode): 36A Diode Configuration: 1 Pair Common Cathode |
товару немає в наявності |
В кошику од. на суму грн. |
| MSAD36-08 | Microsemi Corporation |
Description: DIODE MODULE GP 800V 36A D1 Current - Reverse Leakage @ Vr: 5 mA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Voltage - DC Reverse (Vr) (Max): 800 V Supplier Device Package: D1 Current - Average Rectified (Io) (per Diode): 36A Diode Configuration: 1 Pair Common Anode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: D1 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
|
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1N5934AG | Microsemi Corporation |
Description: DIODE ZENER 24V 1.25W DO204AL Tolerance: ±10% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V |
товару немає в наявності |
Мінімальне замовлення: 313 шт В кошику од. на суму грн. |
|
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1N5934CG | Microsemi Corporation |
Description: DIODE ZENER 24V 1.25W DO204AL Tolerance: ±2% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V |
товару немає в наявності |
Мінімальне замовлення: 157 шт В кошику од. на суму грн. |
 |
HS24515E3 | Microsemi Corporation |
Description: DIODE SCHOTTKY 15V 240A HALF-PAK Packaging: Tube Package / Case: HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 21700pF @ 5V, 1MHz Current - Average Rectified (Io): 240A Supplier Device Package: HALF-PAK Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A Current - Reverse Leakage @ Vr: 150 mA @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 39 шт В кошику од. на суму грн. |
| 090-44550-01 | Microsemi Corporation |
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS Packaging: Bulk Package / Case: 8-DIP Module Mounting Type: Through Hole Operating Temperature: -40°C ~ 75°C Voltage - Supply: 4.5V ~ 32V Differential - Input:Output: No/No PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |
| 090-44500-000 | Microsemi Corporation |
Description: EVAL BOARD FOR MAC-SA5X Packaging: Bulk Function: Miniature Atomic Clock (MAC) Type: Timing Contents: Board(s), Cable(s), Power Supply, Accessories Utilized IC / Part: MAC-SA5X Secondary Attributes: On-Board LEDs |
товару немає в наявності |
В кошику од. на суму грн. | |
| APTGT50DH60TG | Microsemi Corporation |
Description: IGBT MODULE 600V 80A 176W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 14 шт В кошику од. на суму грн. | |
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1N5345B | Microsemi Corporation |
Description: DIODE ZENER 8.7V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.7 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
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1N5356B | Microsemi Corporation |
Description: DIODE ZENER 19V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 19 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V |
товару немає в наявності |
В кошику од. на суму грн. |
| JANTX1N4969C | Microsemi Corporation |
Description: DIODE ZENER 30V 5W E-AXIAL Tolerance: ±2% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: E, Axial Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| JANSP2N2221AL |
Виробник: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS2N2221AUA |
|
Виробник: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Qualification: MIL-PRF-19500/255
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSH2N2221A |
|
Виробник: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Description: TRANS NPN 50V 0.8A TO-18
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSH2N2221AL |
Виробник: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
Description: TRANS NPN 50V 0.8A TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: TO-18 (TO-206AA)
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSH2N2221AUA |
Виробник: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UA
Qualification: MIL-PRF-19500/255
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Description: TRANS NPN 50V 0.8A UA
Qualification: MIL-PRF-19500/255
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSH2N2221AUB |
Виробник: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Description: TRANS NPN 50V 0.8A UB
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
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| JANSH2N2221AUBC |
|
Виробник: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UBC
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Description: TRANS NPN 50V 0.8A UBC
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
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| Jantxv2N2221AUB |
|
Виробник: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Description: TRANS NPN 50V 0.8A UB
Qualification: MIL-PRF-19500/255
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
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| MXPLAD130KP275CA |
Виробник: Microsemi Corporation
Description: TVS DIODE 275VWM 445VC PLAD
Package / Case: Nonstandard SMD
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 445V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Surface Mount
Description: TVS DIODE 275VWM 445VC PLAD
Package / Case: Nonstandard SMD
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 445V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Surface Mount
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| MXPLAD130KP275CAE3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 275VWM 445VC PLAD
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 445V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Description: TVS DIODE 275VWM 445VC PLAD
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 445V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
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| MXPLAD130KP275CVE3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 275VWM 400VC PLAD
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 400V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
Description: TVS DIODE 275VWM 400VC PLAD
Power Line Protection: No
Power - Peak Pulse: 130000W (130kW)
Voltage - Clamping (Max) @ Ipp: 400V
Voltage - Breakdown (Min): 300V
Bidirectional Channels: 1
Supplier Device Package: PLAD
Voltage - Reverse Standoff (Typ): 275V (Max)
Current - Peak Pulse (10/1000µs): 292A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Type: Zener
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Packaging: Bulk
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| TPR1000 |
Виробник: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55KV
Packaging: Bulk
Package / Case: 55KV
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB
Power - Max: 2900W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55KV
Description: RF TRANS NPN 65V 1.09GHZ 55KV
Packaging: Bulk
Package / Case: 55KV
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB
Power - Max: 2900W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55KV
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Мінімальне замовлення: 25 шт
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| LX8386A-33CDD |
|
Виробник: Microsemi Corporation
Description: IC REG LIN 3.3V 1.5A TO263 PWR
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Tube
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.3V @ 1.5A
PSRR: 83dB (120Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-263, Power
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Description: IC REG LIN 3.3V 1.5A TO263 PWR
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Tube
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.3V @ 1.5A
PSRR: 83dB (120Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-263, Power
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
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| LX8386A-33CP |
|
Виробник: Microsemi Corporation
Description: IC REG LIN 3.3V 1.5A TO220 PWR
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Voltage Dropout (Max): 1.3V @ 1.5A
PSRR: 83dB (120Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220, Power
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3.3V 1.5A TO220 PWR
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Voltage Dropout (Max): 1.3V @ 1.5A
PSRR: 83dB (120Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220, Power
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Protection Features: Over Current, Over Temperature
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| 681-2D, 2N, 2P |
|
Виробник: Microsemi Corporation
Description: DIODE MODULE GP 200V 15A ND
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Nd
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Nd
Packaging: Bulk
Description: DIODE MODULE GP 200V 15A ND
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Nd
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Nd
Packaging: Bulk
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| MXLP5KE48A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| CPT30045 |
|
Виробник: Microsemi Corporation
Description: DIODE MOD SCHOTT 45V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 45 V
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Мінімальне замовлення: 14 шт
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| CPT30050 |
|
Виробник: Microsemi Corporation
Description: DIODE MOD SCHOTT 50V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
Description: DIODE MOD SCHOTT 50V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
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| CPT50145 |
|
Виробник: Microsemi Corporation
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A
Current - Reverse Leakage @ Vr: 12 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 250 A
Current - Reverse Leakage @ Vr: 12 mA @ 45 V
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| CPT30060 |
|
Виробник: Microsemi Corporation
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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| CPT600150D |
|
Виробник: Microsemi Corporation
Description: DIODE MOD SCHOT 150V 300A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A
Current - Reverse Leakage @ Vr: 7 mA @ 150 V
Description: DIODE MOD SCHOT 150V 300A 2TOWER
Packaging: Bulk
Package / Case: MD3CC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 300 A
Current - Reverse Leakage @ Vr: 7 mA @ 150 V
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| APT10043JVR |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 1000V 22A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 1000V 22A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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Мінімальне замовлення: 20 шт
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| JANSM2N3634 |
Виробник: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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Мінімальне замовлення: 50 шт
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| JANSM2N3634L |
Виробник: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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Мінімальне замовлення: 50 шт
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| JANSP2N3634 |
Виробник: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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Мінімальне замовлення: 50 шт
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| JANSP2N3634L |
Виробник: Microsemi Corporation
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 10UA TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Current - Collector (Ic) (Max): 10 µA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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Мінімальне замовлення: 50 шт
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| JANSP2N3634UB |
Виробник: Microsemi Corporation
Description: TRANS PNP 140V 10UA UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/357
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 10 µA
Grade: Military
Supplier Device Package: UB
Description: TRANS PNP 140V 10UA UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/357
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 10 µA
Grade: Military
Supplier Device Package: UB
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Мінімальне замовлення: 50 шт
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| 5817SMGE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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Мінімальне замовлення: 3000 шт
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| 5818SMGe3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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Мінімальне замовлення: 3000 шт
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| 5817SMG/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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Мінімальне замовлення: 3000 шт
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| 5818SMG/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO215AA
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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Мінімальне замовлення: 3000 шт
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| UC2844AD |
|
Виробник: Microsemi Corporation
Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Bag
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Bag
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 1
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Мінімальне замовлення: 2500 шт
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| 1N5378B |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 100V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
Description: DIODE ZENER 100V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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| MXSMBG2K4.0 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 4VWM 6.3VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 4VWM 6.3VC DO214AA
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V
Supplier Device Package: DO-214AA (SMBG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.3V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MXSMBJ2K3.3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 3.3VWM 5.8VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 3.3VWM 5.8VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.6V
Voltage - Clamping (Max) @ Ipp: 5.8V
Power - Peak Pulse: 2000W (2kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| 1N6301e3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 138VWM 244VC CASE-1
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 244V
Voltage - Breakdown (Min): 153V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 138V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Description: TVS DIODE 138VWM 244VC CASE-1
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 244V
Voltage - Breakdown (Min): 153V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 138V
Current - Peak Pulse (10/1000µs): 6.2A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
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Мінімальне замовлення: 10800 шт
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| APTGT100A602G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
Description: IGBT MODULE 600V 150A 340W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 340 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
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Мінімальне замовлення: 100 шт
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| APTGT100DH60T3G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP3
Package / Case: SP3
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 340 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Asymmetrical Bridge
Input: Standard
Mounting Type: Through Hole
Description: IGBT MODULE 600V 150A 340W SP3
Package / Case: SP3
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 340 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Asymmetrical Bridge
Input: Standard
Mounting Type: Through Hole
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Мінімальне замовлення: 100 шт
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| UMA5817-T7 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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Мінімальне замовлення: 3000 шт
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| UMA5818 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A ULTRAMITE
Packaging: Tape & Reel (TR)
Package / Case: Ultramite™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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Мінімальне замовлення: 3000 шт
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| JANTX1N4959D |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 11V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 11V 5W E-AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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Мінімальне замовлення: 100 шт
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| JANTX1N4959DUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 11V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 11V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 8.4 V
Qualification: MIL-PRF-19500/435
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Мінімальне замовлення: 100 шт
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| APTGT75TA60PG |
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Description: IGBT MODULE 600V 100A 250W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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Мінімальне замовлення: 100 шт
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| SBT2535 |
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 35V 25A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
Description: DIODE SCHOTTKY 35V 25A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A
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Мінімальне замовлення: 100 шт
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| MAPLAD6.5KP150Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 117 шт
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| MAPLAD6.5KP150A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 112 шт
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| MXLPLAD6.5KP150Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 100 шт
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| MXLPLAD6.5KP150A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 100 шт
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| MXPLAD6.5KP150A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.7A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 100 шт
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| MSKD36-08 |
|
Виробник: Microsemi Corporation
Description: DIODE MODULE GP 800V 36A D1
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D1
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 800 V
Supplier Device Package: D1
Current - Average Rectified (Io) (per Diode): 36A
Diode Configuration: 1 Pair Common Cathode
Description: DIODE MODULE GP 800V 36A D1
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D1
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 800 V
Supplier Device Package: D1
Current - Average Rectified (Io) (per Diode): 36A
Diode Configuration: 1 Pair Common Cathode
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| MSAD36-08 |
|
Виробник: Microsemi Corporation
Description: DIODE MODULE GP 800V 36A D1
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 800 V
Supplier Device Package: D1
Current - Average Rectified (Io) (per Diode): 36A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D1
Packaging: Bulk
Description: DIODE MODULE GP 800V 36A D1
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 800 V
Supplier Device Package: D1
Current - Average Rectified (Io) (per Diode): 36A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: D1
Packaging: Bulk
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| 1N5934AG |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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Мінімальне замовлення: 313 шт
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| 1N5934CG |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
Description: DIODE ZENER 24V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
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Мінімальне замовлення: 157 шт
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| HS24515E3 |
|
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 15V 240A HALF-PAK
Packaging: Tube
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: HALF-PAK
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A
Current - Reverse Leakage @ Vr: 150 mA @ 15 V
Description: DIODE SCHOTTKY 15V 240A HALF-PAK
Packaging: Tube
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21700pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: HALF-PAK
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 240 A
Current - Reverse Leakage @ Vr: 150 mA @ 15 V
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Мінімальне замовлення: 39 шт
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| 090-44550-01 |
|
Виробник: Microsemi Corporation
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 8-DIP Module
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 75°C
Voltage - Supply: 4.5V ~ 32V
Differential - Input:Output: No/No
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 8-DIP Module
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 75°C
Voltage - Supply: 4.5V ~ 32V
Differential - Input:Output: No/No
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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| 090-44500-000 |
|
Виробник: Microsemi Corporation
Description: EVAL BOARD FOR MAC-SA5X
Packaging: Bulk
Function: Miniature Atomic Clock (MAC)
Type: Timing
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: MAC-SA5X
Secondary Attributes: On-Board LEDs
Description: EVAL BOARD FOR MAC-SA5X
Packaging: Bulk
Function: Miniature Atomic Clock (MAC)
Type: Timing
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: MAC-SA5X
Secondary Attributes: On-Board LEDs
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| APTGT50DH60TG |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 80A 176W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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Мінімальне замовлення: 14 шт
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| 1N5345B |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 8.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V
Description: DIODE ZENER 8.7V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.25 V
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| 1N5356B |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 19V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V
Description: DIODE ZENER 19V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V
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| JANTX1N4969C |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 30V 5W E-AXIAL
Tolerance: ±2%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 30V 5W E-AXIAL
Tolerance: ±2%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/435
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Мінімальне замовлення: 100 шт
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