Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11544) > Сторінка 193 з 193
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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A3P400-FGG484 | Microsemi Corporation |
 Description: IC FPGA 194 I/O 484FBGAPackaging: Tray Package / Case: 484-BGA Mounting Type: Surface Mount Number of Gates: 400000 Operating Temperature: 0°C ~ 85°C (TJ) Voltage - Supply: 1.425V ~ 1.575V Supplier Device Package: 484-FPBGA (23x23) Total RAM Bits: 55296 Number of I/O: 194 DigiKey Programmable: Not Verified |
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| MS2267 | Microsemi Corporation |
Description: RF TRANS NPN 60V 1.215GHZ M214 Packaging: Bulk Package / Case: M214 Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 250°C (TJ) Gain: 8dB ~ 8.7dB Power - Max: 575W Current - Collector (Ic) (Max): 20A Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 960MHz ~ 1.215GHz Supplier Device Package: M214 |
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| PM5464-KIT | Microsemi Corporation |
Description: 8-CH FLASH CONTROLLER PCIEX4 4GB Packaging: Bulk Supplied Contents: Board(s) |
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| PM5465-KIT | Microsemi Corporation |
Description: 6-CH FLASH CONTROLLER PCIEX4 4GB Packaging: Bulk Supplied Contents: Board(s) |
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UC3842AD | Microsemi Corporation |
Description: IC REG CTRLR PWM CM 14-SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Buck, Flyback, Forward Voltage - Supply (Vcc/Vdd): 10V ~ 30V Supplier Device Package: 14-SOIC Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 96% Clock Sync: No Number of Outputs: 1 |
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| A2F060M3E-CS288I | Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 288CSP Packaging: Tray Package / Case: 288-TFBGA, CSPBGA Speed: 80MHz RAM Size: 16KB Operating Temperature: -40°C ~ 100°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 288-CSP (11x11) Architecture: MCU, FPGA Flash Size: 128KB |
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| A2F060M3E-1CS288I | Microsemi Corporation |
Description: IC SOC CORTEX-M3 100MHZ 288CSP Packaging: Tray Package / Case: 288-TFBGA, CSPBGA Speed: 100MHz RAM Size: 16KB Operating Temperature: -40°C ~ 100°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 288-CSP (11x11) Architecture: MCU, FPGA Flash Size: 128KB |
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| A2F060M3E-1CS288 | Microsemi Corporation |
Description: IC SOC CORTEX-M3 100MHZ 288CSP Packaging: Tray Package / Case: 288-TFBGA, CSPBGA Speed: 100MHz RAM Size: 16KB Operating Temperature: 0°C ~ 85°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 288-CSP (11x11) Architecture: MCU, FPGA Flash Size: 128KB |
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| A2F060M3E-CS288 | Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 288CSP Packaging: Tray Package / Case: 288-TFBGA, CSPBGA Speed: 80MHz RAM Size: 16KB Operating Temperature: 0°C ~ 85°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 288-CSP (11x11) Architecture: MCU, FPGA Flash Size: 128KB |
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| MSAD60-12 | Microsemi Corporation |
Description: DIODE MODULE GP 1200V 60A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 1200 V |
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1N5379/TR8 | Microsemi Corporation |
Description: DIODE ZENER 110V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 79.2 V |
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| APTM10DHM09T3G | Microsemi Corporation |
Description: MOSFET 2N-CH 100V 139A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SP3 |
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1N4716 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 39V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 29.6 V |
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1N5333B | Microsemi Corporation |
 Description: DIODE ZENER 3.3V 5W T18Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 300 µA @ 1 V |
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MXLPLAD6.5KP85Ae3 | Microsemi Corporation |
Description: TVS DIODE 85VWM 137VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 47.5A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| JANTXV2N6756 | Microsemi Corporation |
Description: MOSFET N-CH 100V 14A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Qualification: MIL-PRF-19500/542 |
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2N6756 | Microsemi Corporation |
Description: MOSFET N-CH 100V 14A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V |
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MXP5KE70CA | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| APTM20UM05SG | Microsemi Corporation |
Description: MOSFET N-CH 200V 317A MODULE Packaging: Bulk Package / Case: J3 Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 317A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V Power Dissipation (Max): 1136W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: Module Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V |
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| APT6040BN | Microsemi Corporation |
Description: MOSFET N-CH 600V 18A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
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| APT6040BNG | Microsemi Corporation |
Description: MOSFET N-CH 600V 18A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
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UC2843AD | Microsemi Corporation |
Description: IC REG CTRLR BUCK/BOOST 14SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Buck, Flyback, Forward Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V Supplier Device Package: 14-SOIC Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 96% Clock Sync: No Number of Outputs: 1 |
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1N5518B (DO35) | Microsemi Corporation |
Description: DIODE ZENER 3.3V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 26 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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| MSD130-18 | Microsemi Corporation |
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на замовлення 2 шт: термін постачання 14-28 дні (днів) |
| A3P400-FGG484 |
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Виробник: Microsemi Corporation
Description: IC FPGA 194 I/O 484FBGA
Packaging: Tray
Package / Case: 484-BGA
Mounting Type: Surface Mount
Number of Gates: 400000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 484-FPBGA (23x23)
Total RAM Bits: 55296
Number of I/O: 194
DigiKey Programmable: Not Verified
Description: IC FPGA 194 I/O 484FBGA
Packaging: Tray
Package / Case: 484-BGA
Mounting Type: Surface Mount
Number of Gates: 400000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 484-FPBGA (23x23)
Total RAM Bits: 55296
Number of I/O: 194
DigiKey Programmable: Not Verified
товар відсутній
| MS2267 |
Виробник: Microsemi Corporation
Description: RF TRANS NPN 60V 1.215GHZ M214
Packaging: Bulk
Package / Case: M214
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 250°C (TJ)
Gain: 8dB ~ 8.7dB
Power - Max: 575W
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: M214
Description: RF TRANS NPN 60V 1.215GHZ M214
Packaging: Bulk
Package / Case: M214
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 250°C (TJ)
Gain: 8dB ~ 8.7dB
Power - Max: 575W
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: M214
товар відсутній
| PM5464-KIT |
Виробник: Microsemi Corporation
Description: 8-CH FLASH CONTROLLER PCIEX4 4GB
Packaging: Bulk
Supplied Contents: Board(s)
Description: 8-CH FLASH CONTROLLER PCIEX4 4GB
Packaging: Bulk
Supplied Contents: Board(s)
товар відсутній
| PM5465-KIT |
Виробник: Microsemi Corporation
Description: 6-CH FLASH CONTROLLER PCIEX4 4GB
Packaging: Bulk
Supplied Contents: Board(s)
Description: 6-CH FLASH CONTROLLER PCIEX4 4GB
Packaging: Bulk
Supplied Contents: Board(s)
товар відсутній
| UC3842AD |
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Виробник: Microsemi Corporation
Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR PWM CM 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
товар відсутній
| A2F060M3E-CS288I |
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Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
товар відсутній
| A2F060M3E-1CS288I |
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Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
товар відсутній
| A2F060M3E-1CS288 |
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Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
товар відсутній
| A2F060M3E-CS288 |
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Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
товар відсутній
| MSAD60-12 |
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Виробник: Microsemi Corporation
Description: DIODE MODULE GP 1200V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Description: DIODE MODULE GP 1200V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
товар відсутній
| 1N5379/TR8 |
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Виробник: Microsemi Corporation
Description: DIODE ZENER 110V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 79.2 V
Description: DIODE ZENER 110V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 79.2 V
товар відсутній
| APTM10DHM09T3G |
Виробник: Microsemi Corporation
Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
товар відсутній
| 1N4716 (DO35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 39V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.6 V
Description: DIODE ZENER 39V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.6 V
товар відсутній
| 1N5333B | |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.3V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Description: DIODE ZENER 3.3V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
товар відсутній
| MXLPLAD6.5KP85Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| JANTXV2N6756 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Qualification: MIL-PRF-19500/542
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Qualification: MIL-PRF-19500/542
товар відсутній
| 2N6756 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
товар відсутній
| MXP5KE70CA |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| APTM20UM05SG |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 317A MODULE
Packaging: Bulk
Package / Case: J3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: Module
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Description: MOSFET N-CH 200V 317A MODULE
Packaging: Bulk
Package / Case: J3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: Module
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
товар відсутній
| APT6040BN |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
товар відсутній
| APT6040BNG |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
товар відсутній
| UC2843AD |
|
Виробник: Microsemi Corporation
Description: IC REG CTRLR BUCK/BOOST 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR BUCK/BOOST 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
товар відсутній
| 1N5518B (DO35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній