Технічний опис MS2267 MICROSEMI
Description: RF TRANS NPN 60V 1.215GHZ M214, Packaging: Bulk, Package / Case: M214, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 250°C (TJ), Gain: 8dB ~ 8.7dB, Power - Max: 575W, Current - Collector (Ic) (Max): 20A, Voltage - Collector Emitter Breakdown (Max): 60V, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V, Frequency - Transition: 960MHz ~ 1.215GHz, Supplier Device Package: M214.
Інші пропозиції MS2267
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| MS2267 | Microsemi Corporation |
Description: RF TRANS NPN 60V 1.215GHZ M214 Packaging: Bulk Package / Case: M214 Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 250°C (TJ) Gain: 8dB ~ 8.7dB Power - Max: 575W Current - Collector (Ic) (Max): 20A Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 960MHz ~ 1.215GHz Supplier Device Package: M214 |
товару немає в наявності |
В кошику од. на суму грн. |
| MS2267 |
Виробник: Microsemi Corporation
Description: RF TRANS NPN 60V 1.215GHZ M214
Packaging: Bulk
Package / Case: M214
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 250°C (TJ)
Gain: 8dB ~ 8.7dB
Power - Max: 575W
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: M214
Description: RF TRANS NPN 60V 1.215GHZ M214
Packaging: Bulk
Package / Case: M214
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 250°C (TJ)
Gain: 8dB ~ 8.7dB
Power - Max: 575W
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: M214
товару немає в наявності
В кошику
од. на суму грн.