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AOV11S60ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; DFN4
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DFN4
Drain-source voltage: 600V
Drain current: 7A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
AOV11S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 650MA/8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V
Power Dissipation (Max): 8.3W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
товар відсутній
AOV11S60ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; DFN4
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DFN4
Drain-source voltage: 600V
Drain current: 7A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
AOV15S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 520MA/12A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V
товар відсутній
AOV15S60ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.4A; DFN4
Mounting: SMD
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DFN4
Drain-source voltage: 600V
Drain current: 9.4A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
AOV15S60ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.4A; DFN4
Mounting: SMD
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DFN4
Drain-source voltage: 600V
Drain current: 9.4A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
AOV20S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 3.6A/18A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 8.3W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
товар відсутній
AOV20S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 3.6A/18A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 8.3W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
товар відсутній