НазваВиробникІнформаціяДоступністьЦіна без ПДВ
GD9-15-NFLairdAntennas Grid,Wire,240-30in,N F
товар відсутній
GD9-15-NFLaird Technologies IASDescription: RF ANT 900MHZ GRID CAB BRKT 30"
товар відсутній
GD9-18Laird Technologies IASDescription: ANT GRID 18DBI 900MHZ 10" N FEM
товар відсутній
GD9-18LairdAntennas Grid,Wire,300-18in,N F
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
GD9-DC15-NFLaird Technologies IASDescription: RF ANT 900MHZ GRID CAB BRKT 30"
товар відсутній
GD900InterlightDescription: Replacement for Lg GD900 Replace
Packaging: Retail Package
Accessory Type: Replacement Battery
Part Status: Active
товар відсутній
GD900 CRYSTALInterlightDescription: Replacement for Lg GD900 Crystal
Packaging: Retail Package
Accessory Type: Replacement Battery
Part Status: Active
товар відсутній
GD900 Теплопроводящая паста 1г (шприц)
Код товару: 168552
Хімія > Теплопровідні матеріали
товар відсутній
GD900; Теплопроводящая паста; 1г (шприц); Теплопроводность: 4.8W; -50…+240°С; Thermal Grease
на замовлення 16 шт:
термін постачання 2-3 дні (днів)
16+40.64 грн
Мінімальне замовлення: 16
GD900HFY120P1SSTARPOWER SEMICONDUCTORCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 9 шт
товар відсутній
GD900HFY120P1SSTARPOWER SEMICONDUCTORCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD900HFY120P1SSTARPOWERDescription: STARPOWER - GD900HFY120P1S - IGBT-Modul, Halbbrücke, 1.522 kA, 1.7 V, 5.24 kW, 150 °C, Module
IGBT-Technologie: Trench/Feldstop
Sperrschichttemperatur Tj, max.: 150
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7
Verlustleistung Pd: 5.24
Bauform - Transistor: Module
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Anzahl der Pins: 10
Produktpalette: -
IGBT-Konfiguration: Halbbrücke
Wandlerpolarität: Zweifach n-Kanal
DC-Kollektorstrom: 1.522
Betriebstemperatur, max.: 150
SVHC: No SVHC (25-Jun-2020)
товар відсутній
GD9FS1G8F2ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 30 ns
Memory Organization: 128M x 8
товар відсутній
GD9FS1G8F2ALGIGigaDeviceNAND Flash 1Gbit OnFI NAND Flash /1.8v /TSOPI-48 /Industrial(-40? to +85?) /Tray
товар відсутній
GD9FS1G8F2AMGIGIGADEVICECategory: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; 128Mx8bit; 45ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Memory organisation: 128Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
товар відсутній
GD9FS1G8F2AMGIGigaDevice Semiconductor (HK) LimitedDescription: IC FLASH 1GBIT 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Part Status: Active
Memory Organization: 128M x 8
товар відсутній
GD9FS1G8F2AMGIGigaDeviceNAND Flash 1Gbit OnFI NAND Flash /1.8v /TSOPI-48 /Industrial(-40? to +85?) /Tray
товар відсутній
GD9FS1G8F2AMGIGIGADEVICECategory: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; 128Mx8bit; 45ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Memory organisation: 128Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
кількість в упаковці: 288 шт
товар відсутній
GD9FS1G8F2DMGIGigaDeviceNAND Flash
товар відсутній
GD9FS1G8F3ALGIGigaDeviceNAND Flash
товар відсутній
GD9FS1G8F3ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
товар відсутній
GD9FS1G8F3AMGIGigaDeviceNAND Flash
товар відсутній
GD9FS2G8F2ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
товар відсутній
GD9FS2G8F2ALGIGigaDeviceNAND Flash
товар відсутній
GD9FS2G8F3ALGIGigaDeviceNAND Flash
товар відсутній
GD9FS2G8F3ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
товар відсутній
GD9FS4G8F2ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
товар відсутній
GD9FS4G8F2ALGIGigaDeviceNAND Flash
товар відсутній
GD9FS4G8F2ALGJGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
товар відсутній
GD9FS4G8F2ALGJGigaDeviceNAND Flash
товар відсутній
GD9FS4G8F2AMGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
товар відсутній
GD9FS4G8F3ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
товар відсутній
GD9FS4G8F3ALGIGigaDeviceNAND Flash
товар відсутній
GD9FS4G8F3AMGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
товар відсутній
GD9FS8G8E2AMGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 1G x 8
товар відсутній
GD9FS8G8E3AMGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 1G x 8
товар відсутній
GD9FU1G8F2ALGIGigaDeviceNAND Flash 1Gbit OnFI NAND Flash /3.3v /FBGA-63 /Industrial(-40? to +85?) /Tray
товар відсутній
GD9FU1G8F2ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 8
товар відсутній
GD9FU1G8F2AMGIGigaDeviceNAND Flash 1Gbit OnFI NAND Flash /3.3v /TSOPI-48 /Industrial(-40? to +85?) /Tray
на замовлення 647 шт:
термін постачання 21-30 дні (днів)
1+312.36 грн
10+ 274.69 грн
25+ 225.08 грн
100+ 211.3 грн
250+ 204.74 грн
500+ 204.08 грн
960+ 190.96 грн
GD9FU1G8F2AMGIGigaDevice Semiconductor (HK) LimitedDescription: SLC NAND FLASH
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
GD9FU1G8F2AMGIGIGADEVICECategory: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; 128Mx8bit; 25ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Memory organisation: 128Mx8bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
кількість в упаковці: 288 шт
товар відсутній
GD9FU1G8F2AMGIGIGADEVICECategory: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; 128Mx8bit; 25ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Memory organisation: 128Mx8bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
товар відсутній
GD9FU1G8F2DMGIGigaDeviceNAND Flash
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
2+239.63 грн
10+ 215.08 грн
100+ 162.74 грн
250+ 162.09 грн
500+ 156.18 грн
960+ 148.31 грн
2880+ 141.09 грн
Мінімальне замовлення: 2
GD9FU1G8F3ALGIGigaDeviceNAND Flash
товар відсутній
GD9FU1G8F3ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
товар відсутній
GD9FU2G6F3ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 128M x 16
товар відсутній
GD9FU2G6F3ALGIGigaDeviceNAND Flash
товар відсутній
GD9FU2G8F2ALGIGigaDeviceNAND Flash
товар відсутній
GD9FU2G8F2ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 256M x 8
товар відсутній
GD9FU2G8F3ALGIGigaDeviceNAND Flash
товар відсутній
GD9FU2G8F3ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 18 ns
Memory Organization: 256M x 8
товар відсутній
GD9FU4G8F2ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
товар відсутній
GD9FU4G8F2ALGIGigaDeviceNAND Flash
товар відсутній
GD9FU4G8F3ALGIGigaDeviceNAND Flash
товар відсутній
GD9FU4G8F3ALGIGigaDevice Semiconductor (HK) LimitedDescription: LINEAR IC
Packaging: Tray
товар відсутній