Продукція > RXH
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| RXH070N03TB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 7A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| RXH070N03TB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V | на замовлення 2549 шт: термін постачання 21-31 дні (днів) |
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| RXH070N03TB1 | ROHM Semiconductor | MOSFETs Nch 30V 7A Power MOSFET | товару немає в наявності | Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||||||||||
| RXH090N03TB1 | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| RXH090N03TB1 | ROHM Semiconductor | MOSFETs SOP8 N-CH 30V 9A | на замовлення 4744 шт: термін постачання 21-30 дні (днів) |
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| RXH090N03TB1 | Rohm Semiconductor | Description: 4V DRIVE NCH MOSFET: MOSFETS ARE Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V | на замовлення 1125 шт: термін постачання 21-31 дні (днів) |
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| RXH090N03TB1 | Rohm Semiconductor | Description: 4V DRIVE NCH MOSFET: MOSFETS ARE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| RXH100N03TB1 | ROHM Semiconductor | MOSFETs SOP8 N-CH 30V 10A | на замовлення 3839 шт: термін постачання 21-30 дні (днів) |
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| RXH100N03TB1 | Rohm Semiconductor | Description: 4V DRIVE NCH MOSFET: MOSFETS ARE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| RXH100N03TB1 | Rohm Semiconductor | Description: 4V DRIVE NCH MOSFET: MOSFETS ARE Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V | на замовлення 2302 шт: термін постачання 21-31 дні (днів) |
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| RXH125N03TB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 12.5A 8SOP Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| RXH125N03TB1 | ROHM Semiconductor | MOSFETs RECOMMENDED ALT 755-RS3E135BNGZETB | на замовлення 1298 шт: термін постачання 21-30 дні (днів) |
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