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BUK9K5R1-30EX BUK9K5R1-30EX Nexperia USA Inc. BUK9K5R1-30E.pdf Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BUK9K5R6-30EX BUK9K5R6-30EX Nexperia USA Inc. BUK9K5R6-30E.pdf Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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NCR401UX NCR401UX Nexperia USA Inc. NCR401U.pdf Description: IC LED DRIVER LINEAR 10MA 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: 6-TSOP
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NPIC6C596ABQX NPIC6C596ABQX Nexperia USA Inc. NPIC6C596A.pdf Description: IC SR OPEN DRAIN 8BIT 16-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Last Time Buy
Number of Bits per Element: 8
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NPIC6C596ADJ NPIC6C596ADJ Nexperia USA Inc. NPIC6C596A.pdf Description: IC SHIFT REGISTER 8BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
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NPIC6C596APWJ NPIC6C596APWJ Nexperia USA Inc. NPIC6C596A.pdf Description: IC SHIFT REGISTER 8BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Last Time Buy
Number of Bits per Element: 8
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PBHV8115X,115 PBHV8115X,115 Nexperia USA Inc. PBHV8115X.pdf Description: TRANS NPN 150V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 50mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
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PBHV8540X,115 PBHV8540X,115 Nexperia USA Inc. PBHV8540X.pdf Description: TRANS NPN 400V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q100
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PBHV9040X,115 PBHV9040X,115 Nexperia USA Inc. PBHV9040X.pdf Description: TRANS PNP 400V 0.25A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
Frequency - Transition: 55MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+14.92 грн
Мінімальне замовлення: 1000
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PBSS4260QAZ PBSS4260QAZ Nexperia USA Inc. PBSS4260QA.pdf Description: TRANS NPN 60V 2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
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PBSS5160QAZ PBSS5160QAZ Nexperia USA Inc. PBSS5160QA.pdf Description: TRANS PNP 60V 1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
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PBSS5260QAZ PBSS5260QAZ Nexperia USA Inc. PBSS5260QA.pdf Description: TRANS PNP 60V 1.7A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
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PDTA123JTVL PDTA123JTVL Nexperia USA Inc. PDTA123J_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q100
Resistors Included: R1 and R2
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PDTC144ETVL PDTC144ETVL Nexperia USA Inc. PDTC144ET.pdf Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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PESD24VF1BLYL PESD24VF1BLYL Nexperia USA Inc. PESD24VF1BL.pdf Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PMDXB950UPEZ PMDXB950UPEZ Nexperia USA Inc. PMDXB950UPE.pdf Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+8.60 грн
Мінімальне замовлення: 5000
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PMEG2002AESF,315 PMEG2002AESF,315 Nexperia USA Inc. PMEG2002AESF.pdf Description: DIODE SCHOTTK 20V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
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PMEG45A10EPDAZ PMEG45A10EPDAZ Nexperia USA Inc. PMEG45A10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+22.41 грн
Мінімальне замовлення: 5000
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PMEG45U10EPDZ PMEG45U10EPDZ Nexperia USA Inc. PMEG45U10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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PMPB85ENEAX PMPB85ENEAX Nexperia USA Inc. PMPB85ENEA.pdf Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+11.96 грн
6000+10.51 грн
Мінімальне замовлення: 3000
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PMPB95ENEAX PMPB95ENEAX Nexperia USA Inc. PMPB95ENEA.pdf Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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PMXB56ENZ PMXB56ENZ Nexperia USA Inc. PMXB56EN.pdf Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
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PSMN0R9-30YLDX PSMN0R9-30YLDX Nexperia USA Inc. PSMN0R9-30YLD.pdf Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
на замовлення 36150 шт:
термін постачання 21-31 дні (днів)
1500+46.96 грн
Мінімальне замовлення: 1500
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PSMN1R0-30YLDX PSMN1R0-30YLDX Nexperia USA Inc. PSMN1R0-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
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PSMN1R2-30YLDX PSMN1R2-30YLDX Nexperia USA Inc. PSMN1R2-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+39.31 грн
Мінімальне замовлення: 1500
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PSMN1R4-30YLDX PSMN1R4-30YLDX Nexperia USA Inc. PSMN1R4-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+33.98 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
PSMN2R1-60CSJ Nexperia USA Inc. Description: MOSFET N-CH 60V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
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PTVS10VU1UPAZ PTVS10VU1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PTVS18VU1UPAZ PTVS18VU1UPAZ Nexperia USA Inc. PTVS18VU1UPA.pdf Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PTVS26VU1UPAZ PTVS26VU1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 26VWM 42.1VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+8.71 грн
6000+7.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PTVS7V5U1UPAZ PTVS7V5U1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PUSB2X4DH PUSB2X4DH Nexperia USA Inc. PUSB2X4D.pdf Description: TVS DIODE 4.3VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.3V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
PUSB2X4YH PUSB2X4YH Nexperia USA Inc. PUSB2X4Y.pdf Description: TVS DIODE 3.8VC 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
PTVS7V5U1UPAZ PTVS7V5U1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PTVS10VU1UPAZ PTVS10VU1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PTVS18VU1UPAZ PTVS18VU1UPAZ Nexperia USA Inc. PTVS18VU1UPA.pdf Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 8059 шт:
термін постачання 21-31 дні (днів)
9+38.07 грн
14+22.90 грн
100+14.60 грн
500+10.34 грн
1000+9.26 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PMEG45A10EPDAZ PMEG45A10EPDAZ Nexperia USA Inc. PMEG45A10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
на замовлення 7901 шт:
термін постачання 21-31 дні (днів)
4+92.47 грн
10+55.97 грн
100+36.98 грн
500+27.04 грн
1000+24.57 грн
2000+22.50 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PMEG45U10EPDZ PMEG45U10EPDZ Nexperia USA Inc. PMEG45U10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
4+93.24 грн
10+56.64 грн
100+37.44 грн
500+27.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NPIC6C596ADJ NPIC6C596ADJ Nexperia USA Inc. NPIC6C596A.pdf Description: IC SHIFT REGISTER 8BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
товару немає в наявності
В кошику  од. на суму  грн.
BUK7K18-40EX BUK7K18-40EX Nexperia USA Inc. BUK7K18-40E.pdf Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2930 шт:
термін постачання 21-31 дні (днів)
3+113.45 грн
10+68.84 грн
50+51.26 грн
100+42.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7Y19-100EX BUK7Y19-100EX Nexperia USA Inc. BUK7Y19-100E.pdf Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2552 шт:
термін постачання 21-31 дні (днів)
3+148.41 грн
10+90.76 грн
50+68.23 грн
100+57.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9Y113-100E,115 BUK9Y113-100E,115 Nexperia USA Inc. BUK9Y113-100E.pdf Description: MOSFET N-CH 100V 12A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1251 шт:
термін постачання 21-31 дні (днів)
4+92.47 грн
10+55.67 грн
50+41.17 грн
100+34.23 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK9Y19-100E,115 BUK9Y19-100E,115 Nexperia USA Inc. BUK9Y19-100E.pdf Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4240 шт:
термін постачання 21-31 дні (днів)
3+114.22 грн
10+69.81 грн
100+46.62 грн
500+34.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN0R9-30YLDX PSMN0R9-30YLDX Nexperia USA Inc. PSMN0R9-30YLD.pdf Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
на замовлення 36981 шт:
термін постачання 21-31 дні (днів)
2+158.52 грн
10+97.87 грн
100+66.50 грн
500+49.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN1R0-30YLDX PSMN1R0-30YLDX Nexperia USA Inc. PSMN1R0-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
на замовлення 864 шт:
термін постачання 21-31 дні (днів)
2+208.25 грн
10+128.85 грн
50+98.01 грн
100+82.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN1R0-40YLDX PSMN1R0-40YLDX Nexperia USA Inc. PSMN1R0-40YLD.pdf Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
на замовлення 384 шт:
термін постачання 21-31 дні (днів)
2+206.69 грн
10+129.15 грн
100+89.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN1R0-40YLDX PSMN1R0-40YLDX Nexperia USA Inc. PSMN1R0-40YLD.pdf Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
PSMN1R4-30YLDX PSMN1R4-30YLDX Nexperia USA Inc. PSMN1R4-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
на замовлення 2570 шт:
термін постачання 21-31 дні (днів)
3+115.78 грн
10+70.93 грн
100+47.60 грн
500+35.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN1R4-40YLDX PSMN1R4-40YLDX Nexperia USA Inc. PSMN1R4-40YLD.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
на замовлення 2322 шт:
термін постачання 21-31 дні (днів)
3+148.41 грн
10+91.44 грн
100+61.95 грн
500+46.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN1R4-40YLDX PSMN1R4-40YLDX Nexperia USA Inc. PSMN1R4-40YLD.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+44.83 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
2N7002P,235 2N7002P,235 Nexperia USA Inc. 2N7002P.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Grade: Automotive
Qualification: AEC-Q101
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BAT54W,135 BAT54W,135 Nexperia USA Inc. BAT54W.pdf Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 28972 шт:
термін постачання 21-31 дні (днів)
29+10.88 грн
49+6.14 грн
100+3.75 грн
500+2.55 грн
1000+2.23 грн
2000+1.96 грн
5000+1.64 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
BAV23,235 BAV23,235 Nexperia USA Inc. BAV23.pdf Description: DIODE ARR GP 200V 225MA SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-143B
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BAV70,235 BAV70,235 Nexperia USA Inc. BAV70.pdf Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BAV70S,135 BAV70S,135 Nexperia USA Inc. BAV70S.pdf Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 6959 шт:
термін постачання 21-31 дні (днів)
16+19.43 грн
27+11.30 грн
100+7.07 грн
500+4.88 грн
1000+4.31 грн
2000+3.83 грн
5000+3.26 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BAW56,235 BAW56,235 Nexperia USA Inc. BAW56.pdf Description: DIODE ARRAY GP 90V 215MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9910 шт:
термін постачання 21-31 дні (днів)
27+11.66 грн
46+6.51 грн
65+4.65 грн
100+3.77 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BC807-40,235 BC807-40,235 Nexperia USA Inc. BC807_SER.pdf Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC846B,235 BC846B,235 Nexperia USA Inc. BC846X_SER.pdf Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
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BC847BPN,135 BC847BPN,135 Nexperia USA Inc. BC847BPN.pdf Description: TRANS NPN/PNP 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 6301 шт:
термін постачання 21-31 дні (днів)
24+13.21 грн
39+7.71 грн
100+4.77 грн
500+3.26 грн
1000+2.86 грн
2000+2.53 грн
5000+2.13 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BC847BS,135 BC847BS,135 Nexperia USA Inc. BC847BS.pdf Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)
24+13.21 грн
39+7.71 грн
100+4.77 грн
500+3.26 грн
1000+2.86 грн
2000+2.53 грн
5000+2.13 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BUK9K5R1-30EX BUK9K5R1-30E.pdf
BUK9K5R1-30EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BUK9K5R6-30EX BUK9K5R6-30E.pdf
BUK9K5R6-30EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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NCR401UX NCR401U.pdf
NCR401UX
Виробник: Nexperia USA Inc.
Description: IC LED DRIVER LINEAR 10MA 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: 6-TSOP
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NPIC6C596ABQX NPIC6C596A.pdf
NPIC6C596ABQX
Виробник: Nexperia USA Inc.
Description: IC SR OPEN DRAIN 8BIT 16-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Last Time Buy
Number of Bits per Element: 8
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NPIC6C596ADJ NPIC6C596A.pdf
NPIC6C596ADJ
Виробник: Nexperia USA Inc.
Description: IC SHIFT REGISTER 8BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
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NPIC6C596APWJ NPIC6C596A.pdf
NPIC6C596APWJ
Виробник: Nexperia USA Inc.
Description: IC SHIFT REGISTER 8BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Last Time Buy
Number of Bits per Element: 8
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PBHV8115X,115 PBHV8115X.pdf
PBHV8115X,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 150V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 50mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
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PBHV8540X,115 PBHV8540X.pdf
PBHV8540X,115
Виробник: Nexperia USA Inc.
Description: TRANS NPN 400V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q100
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PBHV9040X,115 PBHV9040X.pdf
PBHV9040X,115
Виробник: Nexperia USA Inc.
Description: TRANS PNP 400V 0.25A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
Frequency - Transition: 55MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+14.92 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
PBSS4260QAZ PBSS4260QA.pdf
PBSS4260QAZ
Виробник: Nexperia USA Inc.
Description: TRANS NPN 60V 2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
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PBSS5160QAZ PBSS5160QA.pdf
PBSS5160QAZ
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
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PBSS5260QAZ PBSS5260QA.pdf
PBSS5260QAZ
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1.7A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Grade: Automotive
Qualification: AEC-Q100
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PDTA123JTVL PDTA123J_SER.pdf
PDTA123JTVL
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q100
Resistors Included: R1 and R2
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PDTC144ETVL PDTC144ET.pdf
PDTC144ETVL
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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PESD24VF1BLYL PESD24VF1BL.pdf
PESD24VF1BLYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PMDXB950UPEZ PMDXB950UPE.pdf
PMDXB950UPEZ
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+8.60 грн
Мінімальне замовлення: 5000
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PMEG2002AESF,315 PMEG2002AESF.pdf
PMEG2002AESF,315
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 20V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
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PMEG45A10EPDAZ PMEG45A10EPD.pdf
PMEG45A10EPDAZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+22.41 грн
Мінімальне замовлення: 5000
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PMEG45U10EPDZ PMEG45U10EPD.pdf
PMEG45U10EPDZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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PMPB85ENEAX PMPB85ENEA.pdf
PMPB85ENEAX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.96 грн
6000+10.51 грн
Мінімальне замовлення: 3000
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PMPB95ENEAX PMPB95ENEA.pdf
PMPB95ENEAX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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PMXB56ENZ PMXB56EN.pdf
PMXB56ENZ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
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PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
на замовлення 36150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+46.96 грн
Мінімальне замовлення: 1500
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PSMN1R0-30YLDX PSMN1R0-30YLD.pdf
PSMN1R0-30YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
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PSMN1R2-30YLDX PSMN1R2-30YLD.pdf
PSMN1R2-30YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+39.31 грн
Мінімальне замовлення: 1500
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PSMN1R4-30YLDX PSMN1R4-30YLD.pdf
PSMN1R4-30YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+33.98 грн
Мінімальне замовлення: 1500
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PSMN2R1-60CSJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
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PTVS10VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS10VU1UPAZ
Виробник: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS18VU1UPAZ PTVS18VU1UPA.pdf
PTVS18VU1UPAZ
Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.71 грн
Мінімальне замовлення: 3000
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PTVS26VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS26VU1UPAZ
Виробник: Nexperia USA Inc.
Description: TVS DIODE 26VWM 42.1VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.71 грн
6000+7.65 грн
Мінімальне замовлення: 3000
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PTVS7V5U1UPAZ PTVSXU1UPA_SER.pdf
PTVS7V5U1UPAZ
Виробник: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PUSB2X4DH PUSB2X4D.pdf
PUSB2X4DH
Виробник: Nexperia USA Inc.
Description: TVS DIODE 4.3VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.3V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
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PUSB2X4YH PUSB2X4Y.pdf
PUSB2X4YH
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.8VC 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
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PTVS7V5U1UPAZ PTVSXU1UPA_SER.pdf
PTVS7V5U1UPAZ
Виробник: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PTVS10VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS10VU1UPAZ
Виробник: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PTVS18VU1UPAZ PTVS18VU1UPA.pdf
PTVS18VU1UPAZ
Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 8059 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.07 грн
14+22.90 грн
100+14.60 грн
500+10.34 грн
1000+9.26 грн
Мінімальне замовлення: 9
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PMEG45A10EPDAZ PMEG45A10EPD.pdf
PMEG45A10EPDAZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
на замовлення 7901 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.47 грн
10+55.97 грн
100+36.98 грн
500+27.04 грн
1000+24.57 грн
2000+22.50 грн
Мінімальне замовлення: 4
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PMEG45U10EPDZ PMEG45U10EPD.pdf
PMEG45U10EPDZ
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.24 грн
10+56.64 грн
100+37.44 грн
500+27.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NPIC6C596ADJ NPIC6C596A.pdf
NPIC6C596ADJ
Виробник: Nexperia USA Inc.
Description: IC SHIFT REGISTER 8BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
товару немає в наявності
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BUK7K18-40EX BUK7K18-40E.pdf
BUK7K18-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.45 грн
10+68.84 грн
50+51.26 грн
100+42.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7Y19-100EX BUK7Y19-100E.pdf
BUK7Y19-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2552 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.41 грн
10+90.76 грн
50+68.23 грн
100+57.19 грн
Мінімальне замовлення: 3
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BUK9Y113-100E,115 BUK9Y113-100E.pdf
BUK9Y113-100E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 12A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1251 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.47 грн
10+55.67 грн
50+41.17 грн
100+34.23 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK9Y19-100E,115 BUK9Y19-100E.pdf
BUK9Y19-100E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.22 грн
10+69.81 грн
100+46.62 грн
500+34.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
на замовлення 36981 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+158.52 грн
10+97.87 грн
100+66.50 грн
500+49.79 грн
Мінімальне замовлення: 2
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PSMN1R0-30YLDX PSMN1R0-30YLD.pdf
PSMN1R0-30YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
на замовлення 864 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+208.25 грн
10+128.85 грн
50+98.01 грн
100+82.65 грн
Мінімальне замовлення: 2
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PSMN1R0-40YLDX PSMN1R0-40YLD.pdf
PSMN1R0-40YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
на замовлення 384 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.69 грн
10+129.15 грн
100+89.46 грн
Мінімальне замовлення: 2
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PSMN1R0-40YLDX PSMN1R0-40YLD.pdf
PSMN1R0-40YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
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PSMN1R4-30YLDX PSMN1R4-30YLD.pdf
PSMN1R4-30YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
на замовлення 2570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.78 грн
10+70.93 грн
100+47.60 грн
500+35.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN1R4-40YLDX PSMN1R4-40YLD.pdf
PSMN1R4-40YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
на замовлення 2322 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.41 грн
10+91.44 грн
100+61.95 грн
500+46.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN1R4-40YLDX PSMN1R4-40YLD.pdf
PSMN1R4-40YLDX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+44.83 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
2N7002P,235 2N7002P.pdf
2N7002P,235
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Grade: Automotive
Qualification: AEC-Q101
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BAT54W,135 BAT54W.pdf
BAT54W,135
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 28972 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+10.88 грн
49+6.14 грн
100+3.75 грн
500+2.55 грн
1000+2.23 грн
2000+1.96 грн
5000+1.64 грн
Мінімальне замовлення: 29
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BAV23,235 BAV23.pdf
BAV23,235
Виробник: Nexperia USA Inc.
Description: DIODE ARR GP 200V 225MA SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-143B
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BAV70,235 BAV70.pdf
BAV70,235
Виробник: Nexperia USA Inc.
Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BAV70S,135 BAV70S.pdf
BAV70S,135
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 6959 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+19.43 грн
27+11.30 грн
100+7.07 грн
500+4.88 грн
1000+4.31 грн
2000+3.83 грн
5000+3.26 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BAW56,235 BAW56.pdf
BAW56,235
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY GP 90V 215MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9910 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.66 грн
46+6.51 грн
65+4.65 грн
100+3.77 грн
Мінімальне замовлення: 27
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BC807-40,235 BC807_SER.pdf
BC807-40,235
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC846B,235 BC846X_SER.pdf
BC846B,235
Виробник: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
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BC847BPN,135 BC847BPN.pdf
BC847BPN,135
Виробник: Nexperia USA Inc.
Description: TRANS NPN/PNP 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 6301 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.21 грн
39+7.71 грн
100+4.77 грн
500+3.26 грн
1000+2.86 грн
2000+2.53 грн
5000+2.13 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BC847BS,135 BC847BS.pdf
BC847BS,135
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.21 грн
39+7.71 грн
100+4.77 грн
500+3.26 грн
1000+2.86 грн
2000+2.53 грн
5000+2.13 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
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