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GS8MJ Nexperia USA Inc. Description: GS8M/SOD1003/SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GS8MJ Nexperia USA Inc. Description: GS8M/SOD1003/SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
14+22.38 грн
23+13.30 грн
100+8.35 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
GS10MJ Nexperia USA Inc. GS10M.pdf Description: GS10M/SOD1003/SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GS10MJ Nexperia USA Inc. GS10M.pdf Description: GS10M/SOD1003/SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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BC55-10PA-QX BC55-10PA-QX Nexperia USA Inc. BC55PA-Q_SER.pdf Description: BC55-10PA-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC55-10PA-QX BC55-10PA-QX Nexperia USA Inc. BC55PA-Q_SER.pdf Description: BC55-10PA-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC51-10PAS-QX BC51-10PAS-QX Nexperia USA Inc. BC51XPAS-Q_SER.pdf Description: BC51-10PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC51-10PAS-QX BC51-10PAS-QX Nexperia USA Inc. BC51XPAS-Q_SER.pdf Description: BC51-10PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
22+14.66 грн
31+9.66 грн
50+7.79 грн
100+6.79 грн
Мінімальне замовлення: 22
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BC52PAS-QX BC52PAS-QX Nexperia USA Inc. BC52XPAS_SER.pdf Description: BC52PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC52PAS-QX BC52PAS-QX Nexperia USA Inc. BC52XPAS_SER.pdf Description: BC52PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC52-10PAS-QX BC52-10PAS-QX Nexperia USA Inc. BC52XPAS_SER.pdf Description: BC52-10PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC52-10PAS-QX BC52-10PAS-QX Nexperia USA Inc. BC52XPAS_SER.pdf Description: BC52-10PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
11+28.55 грн
18+17.02 грн
100+10.77 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BC52-16PAS-QX BC52-16PAS-QX Nexperia USA Inc. BC52XPAS_SER.pdf Description: BC52-16PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC52-16PAS-QX BC52-16PAS-QX Nexperia USA Inc. BC52XPAS_SER.pdf Description: BC52-16PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
11+28.55 грн
18+17.02 грн
100+10.77 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BC51PAS-QX BC51PAS-QX Nexperia USA Inc. BC51XPAS-Q_SER.pdf Description: BC51PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC51PAS-QX BC51PAS-QX Nexperia USA Inc. BC51XPAS-Q_SER.pdf Description: BC51PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
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PMEG4020EXDX PMEG4020EXDX Nexperia USA Inc. Description: PMEG4020EXD/SOD323HP/SO2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 83pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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PMEG4020EXDX PMEG4020EXDX Nexperia USA Inc. Description: PMEG4020EXD/SOD323HP/SO2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 83pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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PMEG6020EXDX PMEG6020EXDX Nexperia USA Inc. Description: PMEG6020EXD/SOD323HP/SO2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 ns
Technology: Schottky
Capacitance @ Vr, F: 74pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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PMEG6020EXDX PMEG6020EXDX Nexperia USA Inc. Description: PMEG6020EXD/SOD323HP/SO2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 ns
Technology: Schottky
Capacitance @ Vr, F: 74pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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PMEG4020EXD-QX PMEG4020EXD-QX Nexperia USA Inc. PMEG4020EXD-Q.pdf Description: PMEG4020EXD-Q/SOD323HP/SO2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 83pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
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PMEG4020EXD-QX PMEG4020EXD-QX Nexperia USA Inc. PMEG4020EXD-Q.pdf Description: PMEG4020EXD-Q/SOD323HP/SO2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 83pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
14+22.38 грн
24+12.78 грн
50+9.16 грн
100+7.48 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
PMEG6020EXD-QX PMEG6020EXD-QX Nexperia USA Inc. PMEG6020EXD-Q.pdf Description: PMEG6020EXD-Q/SOD323HP/SO2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 ns
Technology: Schottky
Capacitance @ Vr, F: 74pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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PMEG6020EXD-QX PMEG6020EXD-QX Nexperia USA Inc. PMEG6020EXD-Q.pdf Description: PMEG6020EXD-Q/SOD323HP/SO2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 ns
Technology: Schottky
Capacitance @ Vr, F: 74pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
14+22.38 грн
24+12.78 грн
50+9.16 грн
100+7.48 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
PMBS3906-QVL Nexperia USA Inc. Description: PMBS3906-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
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PMBS3906-QR Nexperia USA Inc. Description: PMBS3906-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
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BC848W-QF Nexperia USA Inc. Description: BC848W-Q/SOT323/SC-70
Packaging: Tape & Reel (TR)
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PDTC124XT-QR PDTC124XT-QR Nexperia USA Inc. Description: PDTC124XT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NXU0202DC-Q100H NXU0202DC-Q100H Nexperia USA Inc. NXU0202_Q100.pdf Description: NXU0202DC-Q100/SOT765/VSSOP8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 250Mbps
Supplier Device Package: 8-VSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 5.5 V
Voltage - VCCB: 0.9 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
11+28.55 грн
16+19.32 грн
25+17.24 грн
100+14.03 грн
250+12.99 грн
Мінімальне замовлення: 11
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NXU0102DCH NXU0102DCH Nexperia USA Inc. NXU0102.pdf Description: NXU0102DC/SOT765/VSSOP8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 250Mbps
Supplier Device Package: 8-VSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 5.5 V
Voltage - VCCB: 0.9 V ~ 5.5 V
Number of Circuits: 1
товару немає в наявності
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NXU0202DCH NXU0202DCH Nexperia USA Inc. NXU0202.pdf Description: NXU0202DC/SOT765/VSSOP8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 250Mbps
Supplier Device Package: 8-VSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 5.5 V
Voltage - VCCB: 0.9 V ~ 5.5 V
Number of Circuits: 1
товару немає в наявності
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74HCT00BZZ 74HCT00BZZ Nexperia USA Inc. 74HC_HCT00.pdf Description: 74HCT00BZ/SOT8014/DHXQFN14
Packaging: Tape & Reel (TR)
Package / Case: 14-XFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 5.2mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-DHXQFN (2x2)
Input Logic Level - High: 1.6V
Input Logic Level - Low: 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 4.5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
товару немає в наявності
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PDTA114YQAZ PDTA114YQAZ Nexperia USA Inc. PDTA143X_123J_134Z_114YQA_SER.pdf Description: TRANS PREBIAS
Packaging: Bulk
на замовлення 124966 шт:
термін постачання 21-31 дні (днів)
9521+2.04 грн
Мінімальне замовлення: 9521
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NHDTA114YTR NHDTA114YTR Nexperia USA Inc. NHDTA123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS PNP 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 13874 шт:
термін постачання 21-31 дні (днів)
25+12.35 грн
40+7.51 грн
100+4.64 грн
500+3.18 грн
1000+2.79 грн
Мінімальне замовлення: 25
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PDTA114YT-QR Nexperia USA Inc. Description: PDTA114YT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
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PDTA114YU-QX PDTA114YU-QX Nexperia USA Inc. Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
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PDTA114YM-QYL Nexperia USA Inc. Description: PDTA114YM-Q/SOT883/XQFN3
Packaging: Tape & Reel (TR)
товару немає в наявності
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NHDTA114YT-QR NHDTA114YT-QR Nexperia USA Inc. Description: NHDTA114YT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NHDTA114YU-QX NHDTA114YU-QX Nexperia USA Inc. Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
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PMCM650VNEZ PMCM650VNEZ Nexperia USA Inc. PMCM650VNE.pdf Description: MOSFET N-CH 12V 6.4A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 6 V
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PMCM650VNEZ PMCM650VNEZ Nexperia USA Inc. PMCM650VNE.pdf Description: MOSFET N-CH 12V 6.4A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 6 V
товару немає в наявності
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BZX384-B3V3-QX BZX384-B3V3-QX Nexperia USA Inc. BZX384-Q_SER.pdf Description: DIODE ZENER 3.3V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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BAS16H-QX BAS16H-QX Nexperia USA Inc. BAS16H-Q.pdf Description: DIODE STD 100V 215MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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PMCA14UNYL PMCA14UNYL Nexperia USA Inc. PMCA14UN.pdf Description: SMALL SIGNAL MOSFET FOR MOBILE
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 6 V
на замовлення 2849 шт:
термін постачання 21-31 дні (днів)
7+49.39 грн
11+29.28 грн
100+18.84 грн
500+13.46 грн
1000+12.10 грн
2000+10.96 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
74HCT1G32GZYL Nexperia USA Inc. Description: 74HCT1G32GZ/SOT8065/XSON5
Packaging: Tape & Reel (TR)
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74HCT1G32GZ-Q100YL Nexperia USA Inc. Description: 74HCT1G32GZ-Q100/SOT8065/XSON5
Packaging: Tape & Reel (TR)
товару немає в наявності
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BAT42LS-QYL BAT42LS-QYL Nexperia USA Inc. BAT42LS-Q.pdf Description: DIODE SCHOT 40V 200MA DFN1006BD2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006BD-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
на замовлення 93 шт:
термін постачання 21-31 дні (днів)
18+17.75 грн
28+10.70 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PDTD123ET-QR PDTD123ET-QR Nexperia USA Inc. Description: PDTD123ET-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
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PMBT3904-QVL PMBT3904-QVL Nexperia USA Inc. PMBT3904-Q.pdf Description: TRANS NPN 40V 0.2A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
40+7.72 грн
65+4.61 грн
106+2.81 грн
500+1.90 грн
1000+1.66 грн
2000+1.46 грн
5000+1.22 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
PMBT3904YS-QX PMBT3904YS-QX Nexperia USA Inc. PMBT3904YS-Q.pdf Description: TRANS 2NPN 40V 200MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 230mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
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BC807-40-QVL BC807-40-QVL Nexperia USA Inc. BC807-Q_SER.pdf Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC807-40-QVL BC807-40-QVL Nexperia USA Inc. BC807-Q_SER.pdf Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC807-40-QR BC807-40-QR Nexperia USA Inc. BC807-Q_SER.pdf Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC807-40-QR BC807-40-QR Nexperia USA Inc. BC807-Q_SER.pdf Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
товару немає в наявності
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BC857C-QR BC857C-QR Nexperia USA Inc. BC856-Q_BC857-Q_BC858-Q.pdf Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
товару немає в наявності
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BC857C-QR BC857C-QR Nexperia USA Inc. BC856-Q_BC857-Q_BC858-Q.pdf Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
товару немає в наявності
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BC857CW-QX BC857CW-QX Nexperia USA Inc. BC856W-Q_BC857W-Q_BC858W-Q.pdf Description: TRANS PNP 45V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
товару немає в наявності
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BZX384-B18-QX BZX384-B18-QX Nexperia USA Inc. BZX384-Q_SER.pdf Description: DIODE ZENER 18V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
товару немає в наявності
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PSC1065H-QJ PSC1065H-QJ Nexperia USA Inc. PSC1065H.pdf Description: DIODE SIL CARB 650V 10A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
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PSC1065H-QJ PSC1065H-QJ Nexperia USA Inc. PSC1065H.pdf Description: DIODE SIL CARB 650V 10A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
2+294.80 грн
10+187.94 грн
100+133.11 грн
500+115.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GS8MJ
Виробник: Nexperia USA Inc.
Description: GS8M/SOD1003/SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GS8MJ
Виробник: Nexperia USA Inc.
Description: GS8M/SOD1003/SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+22.38 грн
23+13.30 грн
100+8.35 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
GS10MJ GS10M.pdf
Виробник: Nexperia USA Inc.
Description: GS10M/SOD1003/SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GS10MJ GS10M.pdf
Виробник: Nexperia USA Inc.
Description: GS10M/SOD1003/SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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BC55-10PA-QX BC55PA-Q_SER.pdf
BC55-10PA-QX
Виробник: Nexperia USA Inc.
Description: BC55-10PA-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC55-10PA-QX BC55PA-Q_SER.pdf
BC55-10PA-QX
Виробник: Nexperia USA Inc.
Description: BC55-10PA-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC51-10PAS-QX BC51XPAS-Q_SER.pdf
BC51-10PAS-QX
Виробник: Nexperia USA Inc.
Description: BC51-10PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC51-10PAS-QX BC51XPAS-Q_SER.pdf
BC51-10PAS-QX
Виробник: Nexperia USA Inc.
Description: BC51-10PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+14.66 грн
31+9.66 грн
50+7.79 грн
100+6.79 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BC52PAS-QX BC52XPAS_SER.pdf
BC52PAS-QX
Виробник: Nexperia USA Inc.
Description: BC52PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC52PAS-QX BC52XPAS_SER.pdf
BC52PAS-QX
Виробник: Nexperia USA Inc.
Description: BC52PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC52-10PAS-QX BC52XPAS_SER.pdf
BC52-10PAS-QX
Виробник: Nexperia USA Inc.
Description: BC52-10PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC52-10PAS-QX BC52XPAS_SER.pdf
BC52-10PAS-QX
Виробник: Nexperia USA Inc.
Description: BC52-10PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+28.55 грн
18+17.02 грн
100+10.77 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BC52-16PAS-QX BC52XPAS_SER.pdf
BC52-16PAS-QX
Виробник: Nexperia USA Inc.
Description: BC52-16PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC52-16PAS-QX BC52XPAS_SER.pdf
BC52-16PAS-QX
Виробник: Nexperia USA Inc.
Description: BC52-16PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+28.55 грн
18+17.02 грн
100+10.77 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BC51PAS-QX BC51XPAS-Q_SER.pdf
BC51PAS-QX
Виробник: Nexperia USA Inc.
Description: BC51PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
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BC51PAS-QX BC51XPAS-Q_SER.pdf
BC51PAS-QX
Виробник: Nexperia USA Inc.
Description: BC51PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q101
товару немає в наявності
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PMEG4020EXDX
PMEG4020EXDX
Виробник: Nexperia USA Inc.
Description: PMEG4020EXD/SOD323HP/SO2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 83pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
товару немає в наявності
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PMEG4020EXDX
PMEG4020EXDX
Виробник: Nexperia USA Inc.
Description: PMEG4020EXD/SOD323HP/SO2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 83pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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PMEG6020EXDX
PMEG6020EXDX
Виробник: Nexperia USA Inc.
Description: PMEG6020EXD/SOD323HP/SO2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 ns
Technology: Schottky
Capacitance @ Vr, F: 74pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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PMEG6020EXDX
PMEG6020EXDX
Виробник: Nexperia USA Inc.
Description: PMEG6020EXD/SOD323HP/SO2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 ns
Technology: Schottky
Capacitance @ Vr, F: 74pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
товару немає в наявності
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PMEG4020EXD-QX PMEG4020EXD-Q.pdf
PMEG4020EXD-QX
Виробник: Nexperia USA Inc.
Description: PMEG4020EXD-Q/SOD323HP/SO2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 83pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
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PMEG4020EXD-QX PMEG4020EXD-Q.pdf
PMEG4020EXD-QX
Виробник: Nexperia USA Inc.
Description: PMEG4020EXD-Q/SOD323HP/SO2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 83pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+22.38 грн
24+12.78 грн
50+9.16 грн
100+7.48 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
PMEG6020EXD-QX PMEG6020EXD-Q.pdf
PMEG6020EXD-QX
Виробник: Nexperia USA Inc.
Description: PMEG6020EXD-Q/SOD323HP/SO2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 ns
Technology: Schottky
Capacitance @ Vr, F: 74pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
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PMEG6020EXD-QX PMEG6020EXD-Q.pdf
PMEG6020EXD-QX
Виробник: Nexperia USA Inc.
Description: PMEG6020EXD-Q/SOD323HP/SO2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 ns
Technology: Schottky
Capacitance @ Vr, F: 74pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+22.38 грн
24+12.78 грн
50+9.16 грн
100+7.48 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
PMBS3906-QVL
Виробник: Nexperia USA Inc.
Description: PMBS3906-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
товару немає в наявності
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PMBS3906-QR
Виробник: Nexperia USA Inc.
Description: PMBS3906-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
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BC848W-QF
Виробник: Nexperia USA Inc.
Description: BC848W-Q/SOT323/SC-70
Packaging: Tape & Reel (TR)
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PDTC124XT-QR
PDTC124XT-QR
Виробник: Nexperia USA Inc.
Description: PDTC124XT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NXU0202DC-Q100H NXU0202_Q100.pdf
NXU0202DC-Q100H
Виробник: Nexperia USA Inc.
Description: NXU0202DC-Q100/SOT765/VSSOP8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 250Mbps
Supplier Device Package: 8-VSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 5.5 V
Voltage - VCCB: 0.9 V ~ 5.5 V
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+28.55 грн
16+19.32 грн
25+17.24 грн
100+14.03 грн
250+12.99 грн
Мінімальне замовлення: 11
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NXU0102DCH NXU0102.pdf
NXU0102DCH
Виробник: Nexperia USA Inc.
Description: NXU0102DC/SOT765/VSSOP8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 250Mbps
Supplier Device Package: 8-VSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 5.5 V
Voltage - VCCB: 0.9 V ~ 5.5 V
Number of Circuits: 1
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NXU0202DCH NXU0202.pdf
NXU0202DCH
Виробник: Nexperia USA Inc.
Description: NXU0202DC/SOT765/VSSOP8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 250Mbps
Supplier Device Package: 8-VSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 5.5 V
Voltage - VCCB: 0.9 V ~ 5.5 V
Number of Circuits: 1
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74HCT00BZZ 74HC_HCT00.pdf
74HCT00BZZ
Виробник: Nexperia USA Inc.
Description: 74HCT00BZ/SOT8014/DHXQFN14
Packaging: Tape & Reel (TR)
Package / Case: 14-XFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 5.2mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-DHXQFN (2x2)
Input Logic Level - High: 1.6V
Input Logic Level - Low: 1.2V
Max Propagation Delay @ V, Max CL: 12ns @ 4.5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
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PDTA114YQAZ PDTA143X_123J_134Z_114YQA_SER.pdf
PDTA114YQAZ
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
на замовлення 124966 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9521+2.04 грн
Мінімальне замовлення: 9521
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NHDTA114YTR NHDTA123JT_143ZT_114YT_SER.pdf
NHDTA114YTR
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 13874 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.35 грн
40+7.51 грн
100+4.64 грн
500+3.18 грн
1000+2.79 грн
Мінімальне замовлення: 25
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PDTA114YT-QR
Виробник: Nexperia USA Inc.
Description: PDTA114YT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
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PDTA114YU-QX
PDTA114YU-QX
Виробник: Nexperia USA Inc.
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTA114YM-QYL
Виробник: Nexperia USA Inc.
Description: PDTA114YM-Q/SOT883/XQFN3
Packaging: Tape & Reel (TR)
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NHDTA114YT-QR
NHDTA114YT-QR
Виробник: Nexperia USA Inc.
Description: NHDTA114YT-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NHDTA114YU-QX
NHDTA114YU-QX
Виробник: Nexperia USA Inc.
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PMCM650VNEZ PMCM650VNE.pdf
PMCM650VNEZ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 12V 6.4A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 6 V
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PMCM650VNEZ PMCM650VNE.pdf
PMCM650VNEZ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 12V 6.4A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 6 V
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BZX384-B3V3-QX BZX384-Q_SER.pdf
BZX384-B3V3-QX
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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BAS16H-QX BAS16H-Q.pdf
BAS16H-QX
Виробник: Nexperia USA Inc.
Description: DIODE STD 100V 215MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Qualification: AEC-Q101
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PMCA14UNYL PMCA14UN.pdf
PMCA14UNYL
Виробник: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR MOBILE
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DSN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 6 V
на замовлення 2849 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.39 грн
11+29.28 грн
100+18.84 грн
500+13.46 грн
1000+12.10 грн
2000+10.96 грн
Мінімальне замовлення: 7
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74HCT1G32GZYL
Виробник: Nexperia USA Inc.
Description: 74HCT1G32GZ/SOT8065/XSON5
Packaging: Tape & Reel (TR)
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74HCT1G32GZ-Q100YL
Виробник: Nexperia USA Inc.
Description: 74HCT1G32GZ-Q100/SOT8065/XSON5
Packaging: Tape & Reel (TR)
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BAT42LS-QYL BAT42LS-Q.pdf
BAT42LS-QYL
Виробник: Nexperia USA Inc.
Description: DIODE SCHOT 40V 200MA DFN1006BD2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006BD-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
на замовлення 93 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+17.75 грн
28+10.70 грн
Мінімальне замовлення: 18
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PDTD123ET-QR
PDTD123ET-QR
Виробник: Nexperia USA Inc.
Description: PDTD123ET-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PMBT3904-QVL PMBT3904-Q.pdf
PMBT3904-QVL
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.2A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+7.72 грн
65+4.61 грн
106+2.81 грн
500+1.90 грн
1000+1.66 грн
2000+1.46 грн
5000+1.22 грн
Мінімальне замовлення: 40
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PMBT3904YS-QX PMBT3904YS-Q.pdf
PMBT3904YS-QX
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 40V 200MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 230mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
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BC807-40-QVL BC807-Q_SER.pdf
BC807-40-QVL
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC807-40-QVL BC807-Q_SER.pdf
BC807-40-QVL
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC807-40-QR BC807-Q_SER.pdf
BC807-40-QR
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC807-40-QR BC807-Q_SER.pdf
BC807-40-QR
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC857C-QR BC856-Q_BC857-Q_BC858-Q.pdf
BC857C-QR
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC857C-QR BC856-Q_BC857-Q_BC858-Q.pdf
BC857C-QR
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
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BC857CW-QX BC856W-Q_BC857W-Q_BC858W-Q.pdf
BC857CW-QX
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BZX384-B18-QX BZX384-Q_SER.pdf
BZX384-B18-QX
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 18V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
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PSC1065H-QJ PSC1065H.pdf
PSC1065H-QJ
Виробник: Nexperia USA Inc.
Description: DIODE SIL CARB 650V 10A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
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PSC1065H-QJ PSC1065H.pdf
PSC1065H-QJ
Виробник: Nexperia USA Inc.
Description: DIODE SIL CARB 650V 10A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+294.80 грн
10+187.94 грн
100+133.11 грн
500+115.65 грн
Мінімальне замовлення: 2
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