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74AUP2G08GS,115 NEXPERIA 74AUP2G08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; 800mVDC÷3.6VDC; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: XSON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Family: AUP
Number of channels: 2
Kind of gate: AND
Technology: CMOS
товар відсутній
PSMN4R0-40YS,115 NEXPERIA PSMN4R0-40YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 472A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
74HCT2G16GVH NEXPERIA 74HCT2G16GVH.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; IN: 1; TTL; SMD; SC74,TSOP6; Mini Logic
Type of integrated circuit: digital
Case: SC74; TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Technology: TTL
Number of inputs: 1
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: buffer
Number of channels: 2
Manufacturer series: Mini Logic
товар відсутній
BCM53DSF BCM53DSF NEXPERIA BCM53DS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 80V; 1A; 320mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.32W
Case: SC74; SOT457; TSOP6
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 140Hz
товар відсутній
BUK7M12-60EX NEXPERIA BUK7M12-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK7M22-80EX NEXPERIA BUK7M22-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Case: LFPAK33; SOT1210
Polarisation: unipolar
Application: automotive industry
Power dissipation: 75W
Kind of package: reel; tape
Gate charge: 23.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 147A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 26A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
товар відсутній
BUK7M42-60EX NEXPERIA BUK7M42-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK7M8R5-40HX NEXPERIA BUK7M8R5-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK7M9R9-60EX NEXPERIA BUK7M9R9-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK7Y1R4-40HX NEXPERIA BUK7Y1R4-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M10-30EX NEXPERIA BUK9M10-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M11-40EX NEXPERIA BUK9M11-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M11-40HX NEXPERIA BUK9M11-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 50W
Application: automotive industry
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 27.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Pulsed drain current: 193A
товар відсутній
BUK9M12-60EX NEXPERIA BUK9M12-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M14-40EX NEXPERIA BUK9M14-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M15-60EX NEXPERIA BUK9M15-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M17-30EX NEXPERIA BUK9M17-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M20-40HX NEXPERIA BUK9M20-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M35-80EX NEXPERIA BUK9M35-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M3R3-40HX NEXPERIA BUK9M3R3-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M4R3-40HX NEXPERIA BUK9M4R3-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M67-60ELX NEXPERIA BUK9M67-60EL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M6R0-40HX NEXPERIA BUK9M6R0-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M7R2-40EX NEXPERIA BUK9M7R2-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M85-60EX NEXPERIA BUK9M85-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M8R5-40HX NEXPERIA BUK9M8R5-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BZX84-C13,215 BZX84-C13,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 8570 шт:
термін постачання 21-30 дні (днів)
110+3.4 грн
255+ 1.38 грн
500+ 1.25 грн
820+ 0.99 грн
2255+ 0.94 грн
Мінімальне замовлення: 110
BZX84-C27,215 BZX84-C27,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 2243 шт:
термін постачання 21-30 дні (днів)
100+3.76 грн
200+ 1.75 грн
500+ 1.57 грн
670+ 1.19 грн
1845+ 1.13 грн
Мінімальне замовлення: 100
BZX84-C3V0,215 BZX84-C3V0,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 3640 шт:
термін постачання 21-30 дні (днів)
95+4.07 грн
210+ 1.66 грн
500+ 1.5 грн
675+ 1.19 грн
1855+ 1.13 грн
Мінімальне замовлення: 95
BZX84-C43,215 BZX84-C43,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 43V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 3274 шт:
термін постачання 21-30 дні (днів)
100+3.78 грн
200+ 1.75 грн
500+ 1.57 грн
670+ 1.19 грн
1845+ 1.13 грн
Мінімальне замовлення: 100
BZX84-C47,215 BZX84-C47,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 2005 шт:
термін постачання 21-30 дні (днів)
90+4.3 грн
200+ 1.75 грн
500+ 1.57 грн
670+ 1.19 грн
1845+ 1.13 грн
Мінімальне замовлення: 90
BZX84-C56,215 BZX84-C56,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 56V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
BZA856A,115 NEXPERIA BZA800A_ser.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.75A
Leakage current: 2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
товар відсутній
BZA856AVL,115 NEXPERIA BZA800AVL_SERIES.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 6W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.5A
Leakage current: 0.2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
товар відсутній
PSMN4R0-30YLDX NEXPERIA PSMN4R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN5R5-60YS,115 PSMN5R5-60YS,115 NEXPERIA PSMN5R5-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2835 шт:
термін постачання 21-30 дні (днів)
4+108.32 грн
5+ 92.95 грн
11+ 76.31 грн
29+ 72.14 грн
500+ 69.37 грн
Мінімальне замовлення: 4
BUK964R4-40B,118 NEXPERIA BUK964R4-40B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 697A; 254W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 697A
Power dissipation: 254W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BZV55-C30,115 BZV55-C30,115 NEXPERIA BZV55-C10.115.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 30V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 10285 шт:
термін постачання 21-30 дні (днів)
36+10.46 грн
49+ 7.21 грн
73+ 4.8 грн
100+ 3.95 грн
250+ 3.05 грн
500+ 2.43 грн
612+ 1.31 грн
1682+ 1.23 грн
Мінімальне замовлення: 36
74LVC157ABQ,115 NEXPERIA 74LVC157A.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN16; LVC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
товар відсутній
PSMN025-100D,118 PSMN025-100D,118 NEXPERIA PSMN025-100D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN069-100YS,115 NEXPERIA PSMN069-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN2R0-60PS,127 PSMN2R0-60PS,127 NEXPERIA PSMN2R0-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN2R2-40PS,127 PSMN2R2-40PS,127 NEXPERIA PSMN2R2-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN4R2-60PLQ PSMN4R2-60PLQ NEXPERIA PSMN4R2-60PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 124A; 263W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 124A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN022-30PL,127 PSMN022-30PL,127 NEXPERIA PSMN022-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 4.4nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
6+59.66 грн
10+ 52.03 грн
Мінімальне замовлення: 6
PSMN027-100PS,127 PSMN027-100PS,127 NEXPERIA PSMN027-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
4+97.86 грн
5+ 81.85 грн
10+ 72.84 грн
13+ 65.41 грн
Мінімальне замовлення: 4
PSMN057-200P,127 PSMN057-200P,127 NEXPERIA PSMN057-200P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 729 шт:
термін постачання 21-30 дні (днів)
2+197.97 грн
3+ 165.1 грн
7+ 127.71 грн
18+ 120.77 грн
Мінімальне замовлення: 2
PSMN1R7-60BS,118 PSMN1R7-60BS,118 NEXPERIA PSMN1R7-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 795 шт:
термін постачання 21-30 дні (днів)
2+259.22 грн
5+ 163.71 грн
14+ 154.69 грн
Мінімальне замовлення: 2
PSMN3R3-60PLQ PSMN3R3-60PLQ NEXPERIA PSMN3R3-60PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 793A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 793A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN4R6-60PS,127 PSMN4R6-60PS,127 NEXPERIA PSMN4R6-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN4R8-100PSEQ PSMN4R8-100PSEQ NEXPERIA PSMN4R8-100PSE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN7R0-100PS,127 PSMN7R0-100PS,127 NEXPERIA PSMN7R0-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN7R6-100BSEJ NEXPERIA PSMN7R6-100BSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN8R0-40PS,127 PSMN8R0-40PS,127 NEXPERIA PSMN8R0-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
5+74.92 грн
10+ 66.59 грн
15+ 56.88 грн
39+ 54.11 грн
Мінімальне замовлення: 5
PSMNR90-30BL,118 PSMNR90-30BL,118 NEXPERIA PSMNR90-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 243nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
74HCT259D,653 74HCT259D,653 NEXPERIA 74HCT259D,653.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Trigger: level-triggered
на замовлення 2573 шт:
термін постачання 21-30 дні (днів)
8+52.29 грн
12+ 31.22 грн
25+ 24.28 грн
68+ 11.93 грн
186+ 11.24 грн
Мінімальне замовлення: 8
74HCT259PW,112 74HCT259PW,112 NEXPERIA 74HC259D.652.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; TSSOP16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HCT
Trigger: level-triggered
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
19+19.87 грн
23+ 15.26 грн
Мінімальне замовлення: 19
74HCT259PW,118 NEXPERIA 74HCT259PW,118.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Trigger: level-triggered
товар відсутній
74LVC16373ADGG,118 NEXPERIA 74LVC16373ADGG,118.pdf Category: Latches
Description: IC: digital; D latch; Ch: 16; 1.2÷3.6VDC; SMD; TSSOP48; -40÷125°C
Operating temperature: -40...125°C
Supply voltage: 1.2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: reel; tape
Kind of integrated circuit: D latch
Family: LVC
Mounting: SMD
Case: TSSOP48
товар відсутній
74HCT259BQ,115 NEXPERIA 74HC_HCT259.pdf Category: Latches
Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; TTL; 4.5÷5.5VDC; SMD; DHVQFN16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: DHVQFN16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
товар відсутній
74AUP2G08GS,115 74AUP2G08.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; 800mVDC÷3.6VDC; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: XSON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Family: AUP
Number of channels: 2
Kind of gate: AND
Technology: CMOS
товар відсутній
PSMN4R0-40YS,115 PSMN4R0-40YS.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 472A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
74HCT2G16GVH 74HCT2G16GVH.pdf
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; IN: 1; TTL; SMD; SC74,TSOP6; Mini Logic
Type of integrated circuit: digital
Case: SC74; TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Technology: TTL
Number of inputs: 1
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: buffer
Number of channels: 2
Manufacturer series: Mini Logic
товар відсутній
BCM53DSF BCM53DS.pdf
BCM53DSF
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 80V; 1A; 320mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.32W
Case: SC74; SOT457; TSOP6
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 140Hz
товар відсутній
BUK7M12-60EX BUK7M12-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK7M22-80EX BUK7M22-80E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Case: LFPAK33; SOT1210
Polarisation: unipolar
Application: automotive industry
Power dissipation: 75W
Kind of package: reel; tape
Gate charge: 23.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 147A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 26A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
товар відсутній
BUK7M42-60EX BUK7M42-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK7M8R5-40HX BUK7M8R5-40H.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK7M9R9-60EX BUK7M9R9-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK7Y1R4-40HX BUK7Y1R4-40H.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M10-30EX BUK9M10-30E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M11-40EX BUK9M11-40E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M11-40HX BUK9M11-40H.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 50W
Application: automotive industry
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 27.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Pulsed drain current: 193A
товар відсутній
BUK9M12-60EX BUK9M12-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M14-40EX BUK9M14-40E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M15-60EX BUK9M15-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M17-30EX BUK9M17-30E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M20-40HX BUK9M20-40H.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M35-80EX BUK9M35-80E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M3R3-40HX BUK9M3R3-40H.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M4R3-40HX BUK9M4R3-40H.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M67-60ELX BUK9M67-60EL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M6R0-40HX BUK9M6R0-40H.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M7R2-40EX BUK9M7R2-40E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M85-60EX BUK9M85-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BUK9M8R5-40HX BUK9M8R5-40H.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BZX84-C13,215 BZX84_SER.pdf
BZX84-C13,215
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 8570 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
110+3.4 грн
255+ 1.38 грн
500+ 1.25 грн
820+ 0.99 грн
2255+ 0.94 грн
Мінімальне замовлення: 110
BZX84-C27,215 BZX84_SER.pdf
BZX84-C27,215
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 2243 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
100+3.76 грн
200+ 1.75 грн
500+ 1.57 грн
670+ 1.19 грн
1845+ 1.13 грн
Мінімальне замовлення: 100
BZX84-C3V0,215 BZX84_SER.pdf
BZX84-C3V0,215
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 3640 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
95+4.07 грн
210+ 1.66 грн
500+ 1.5 грн
675+ 1.19 грн
1855+ 1.13 грн
Мінімальне замовлення: 95
BZX84-C43,215 BZX84_SER.pdf
BZX84-C43,215
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 43V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 3274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
100+3.78 грн
200+ 1.75 грн
500+ 1.57 грн
670+ 1.19 грн
1845+ 1.13 грн
Мінімальне замовлення: 100
BZX84-C47,215 BZX84_SER.pdf
BZX84-C47,215
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 2005 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
90+4.3 грн
200+ 1.75 грн
500+ 1.57 грн
670+ 1.19 грн
1845+ 1.13 грн
Мінімальне замовлення: 90
BZX84-C56,215 BZX84_SER.pdf
BZX84-C56,215
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 56V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
BZA856A,115 BZA800A_ser.pdf
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.75A
Leakage current: 2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
товар відсутній
BZA856AVL,115 BZA800AVL_SERIES.pdf
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 6W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.5A
Leakage current: 0.2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
товар відсутній
PSMN4R0-30YLDX PSMN4R0-30YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN5R5-60YS,115 PSMN5R5-60YS.pdf
PSMN5R5-60YS,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2835 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+108.32 грн
5+ 92.95 грн
11+ 76.31 грн
29+ 72.14 грн
500+ 69.37 грн
Мінімальне замовлення: 4
BUK964R4-40B,118 BUK964R4-40B.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 697A; 254W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 697A
Power dissipation: 254W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
BZV55-C30,115 BZV55-C10.115.pdf
BZV55-C30,115
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 30V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 10285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
36+10.46 грн
49+ 7.21 грн
73+ 4.8 грн
100+ 3.95 грн
250+ 3.05 грн
500+ 2.43 грн
612+ 1.31 грн
1682+ 1.23 грн
Мінімальне замовлення: 36
74LVC157ABQ,115 74LVC157A.pdf
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN16; LVC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
товар відсутній
PSMN025-100D,118 PSMN025-100D.pdf
PSMN025-100D,118
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN069-100YS,115 PSMN069-100YS.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN2R0-60PS,127 PSMN2R0-60PS.pdf
PSMN2R0-60PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN2R2-40PS,127 PSMN2R2-40PS.pdf
PSMN2R2-40PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN4R2-60PLQ PSMN4R2-60PL.pdf
PSMN4R2-60PLQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 124A; 263W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 124A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN022-30PL,127 PSMN022-30PL.pdf
PSMN022-30PL,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 4.4nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+59.66 грн
10+ 52.03 грн
Мінімальне замовлення: 6
PSMN027-100PS,127 PSMN027-100PS.pdf
PSMN027-100PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+97.86 грн
5+ 81.85 грн
10+ 72.84 грн
13+ 65.41 грн
Мінімальне замовлення: 4
PSMN057-200P,127 PSMN057-200P.pdf
PSMN057-200P,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 729 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+197.97 грн
3+ 165.1 грн
7+ 127.71 грн
18+ 120.77 грн
Мінімальне замовлення: 2
PSMN1R7-60BS,118 PSMN1R7-60BS.pdf
PSMN1R7-60BS,118
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 795 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+259.22 грн
5+ 163.71 грн
14+ 154.69 грн
Мінімальне замовлення: 2
PSMN3R3-60PLQ PSMN3R3-60PL.pdf
PSMN3R3-60PLQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 793A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 793A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN4R6-60PS,127 PSMN4R6-60PS.pdf
PSMN4R6-60PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN4R8-100PSEQ PSMN4R8-100PSE.pdf
PSMN4R8-100PSEQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN7R0-100PS,127 PSMN7R0-100PS.pdf
PSMN7R0-100PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
PSMN7R6-100BSEJ PSMN7R6-100BSE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PSMN8R0-40PS,127 PSMN8R0-40PS.pdf
PSMN8R0-40PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+74.92 грн
10+ 66.59 грн
15+ 56.88 грн
39+ 54.11 грн
Мінімальне замовлення: 5
PSMNR90-30BL,118 PSMNR90-30BL.pdf
PSMNR90-30BL,118
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 243nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
74HCT259D,653 74HCT259D,653.pdf
74HCT259D,653
Виробник: NEXPERIA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Trigger: level-triggered
на замовлення 2573 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+52.29 грн
12+ 31.22 грн
25+ 24.28 грн
68+ 11.93 грн
186+ 11.24 грн
Мінімальне замовлення: 8
74HCT259PW,112 74HC259D.652.pdf
74HCT259PW,112
Виробник: NEXPERIA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; TSSOP16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HCT
Trigger: level-triggered
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
19+19.87 грн
23+ 15.26 грн
Мінімальне замовлення: 19
74HCT259PW,118 74HCT259PW,118.pdf
Виробник: NEXPERIA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Trigger: level-triggered
товар відсутній
74LVC16373ADGG,118 74LVC16373ADGG,118.pdf
Виробник: NEXPERIA
Category: Latches
Description: IC: digital; D latch; Ch: 16; 1.2÷3.6VDC; SMD; TSSOP48; -40÷125°C
Operating temperature: -40...125°C
Supply voltage: 1.2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: reel; tape
Kind of integrated circuit: D latch
Family: LVC
Mounting: SMD
Case: TSSOP48
товар відсутній
74HCT259BQ,115 74HC_HCT259.pdf
Виробник: NEXPERIA
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; TTL; 4.5÷5.5VDC; SMD; DHVQFN16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: DHVQFN16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
товар відсутній
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