Продукція > NTE ELECTRONICS > Всі товари виробника NTE ELECTRONICS (5278) > Сторінка 64 з 88
| Фото | Назва | Виробник | Інформація |
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NTE1954 | NTE Electronics |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; TO220; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 12V Output current: 1A Case: TO220 Mounting: THT Operating temperature: -40...125°C Number of channels: 1 Input voltage: 14...26V |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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NTE5115A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 5W; 4.7V; Ø9,52x5,21mm; single diode; 5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Case: Ø9,52x5,21mm Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
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| NTE4994 | NTE Electronics |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 350V; 3.08A; unidirectional; Ø9,52x5,21mm Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 300V Breakdown voltage: 350V Max. forward impulse current: 3.08A Semiconductor structure: unidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 5µA |
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NTE56046 | NTE Electronics |
Category: Triacs Description: Triac; 600V; 16A; TO220F; Igt: 10/25mA; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220F Gate current: 10/25mA Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
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| NTE68 | NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Current gain: 5...60 Mounting: THT |
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NTE40182B | NTE Electronics |
Category: Counters/dividers Description: IC: digital; Look-Ahead Carry Generator; CMOS; THT; DIP16; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: Look-Ahead Carry Generator Technology: CMOS Mounting: THT Case: DIP16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Quiescent current: 3mA |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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NTE4018B | NTE Electronics |
Category: Counters/dividers Description: IC: digital; divide by N; Ch: 5; CMOS; THT; DIP16; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: divide by N Number of channels: 5 Technology: CMOS Mounting: THT Case: DIP16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Quiescent current: 600µA |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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NTE74LS393 | NTE Electronics |
Category: Counters/dividers Description: IC: digital; 4bit,decade ripple counter; Ch: 2; TTL; THT; DIP14 Type of integrated circuit: digital Kind of integrated circuit: 4bit; decade ripple counter Number of channels: 2 Technology: TTL Mounting: THT Case: DIP14 |
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NTE29 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 50A Power dissipation: 300W Case: TO3 Current gain: 5...60 Mounting: THT |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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NTE4914 | NTE Electronics |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; Ø9,52x5,21mm Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 90A Semiconductor structure: unidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 5µA |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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NTE525 | NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 200mA; Ifsm: 30A; Ø5,33x2,72mm; 500ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 2kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: high voltage Max. forward impulse current: 30A Case: Ø5,33x2,72mm Max. forward voltage: 4V Reverse recovery time: 0.5µs |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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NTE2635 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 700V; 8A; 35W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 700V Collector current: 8A Power dissipation: 35W Case: TO220FP Current gain: 4...23 Mounting: THT |
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NTE5007A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.9V; DO35; single diode; 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA |
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| NTE460 | NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-JFET; unipolar; 0.3W; TO72; 10mA Type of transistor: P-JFET Polarisation: unipolar Power dissipation: 0.3W Case: TO72 Gate-source voltage: 20V Mounting: THT Kind of package: bulk Gate current: 10mA |
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NTE4034B | NTE Electronics |
Category: Shift registers Description: IC: digital; bidirectional,bus register; THT; DIP24 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; bus register Mounting: THT Case: DIP24 |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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NTE3043 | NTE Electronics |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 80V; DIP6 Mounting: THT Turn-off time: 50µs Number of channels: 1 Kind of output: transistor Type of optocoupler: optocoupler Case: DIP6 Collector-emitter voltage: 80V Turn-on time: 3.2µs |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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NTE2309 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 12A; 100W; TO3P Case: TO3P Mounting: THT Frequency: 15MHz Power dissipation: 100W Collector-emitter voltage: 800V Collector current: 12A Type of transistor: NPN Polarisation: bipolar |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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NTE5296A | NTE Electronics |
Category: Stud mounting Zener diodes Description: Diode: Zener; 50W; 200V; DO5; screw type; bulk; anode to stud; 10uA Type of diode: Zener Power dissipation: 50W Zener voltage: 200V Case: DO5 Mounting: screw type Tolerance: ±5% Kind of package: bulk Semiconductor structure: anode to stud Leakage current: 10µA |
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NTE5296AK | NTE Electronics |
Category: Stud mounting Zener diodes Description: Diode: Zener; 50W; 200V; DO5; screw type; bulk; cathode to stud Mounting: screw type Power dissipation: 50W Kind of package: bulk Type of diode: Zener Case: DO5 Tolerance: ±5% Semiconductor structure: cathode to stud Zener voltage: 200V Leakage current: 10µA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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NTE2529 | NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1.5A; 15W; TO126 Mounting: THT Case: TO126 Power dissipation: 15W Polarisation: bipolar Type of transistor: PNP Collector current: 1.5A Current gain: 80...400 Collector-emitter voltage: 160V Frequency: 120MHz |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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| NTE5883 | NTE Electronics |
Category: Stud mounting universal diodes Description: Diode: rectifying; 600V; 1.26V; 12A; anode to stud; DO4; screw type Mounting: screw type Type of diode: rectifying Case: DO4 Fastening thread: 10-32 NF-2A Max. off-state voltage: 0.6kV Max. forward voltage: 1.26V Load current: 12A Semiconductor structure: anode to stud Max. forward impulse current: 240A |
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NTE4069 | NTE Electronics |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; CMOS; THT; DIP14; 3÷18VDC; -55÷125°C; 30uA Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: hex; 6 Quiescent current: 30µA Kind of gate: NOT Technology: CMOS Mounting: THT Operating temperature: -55...125°C Case: DIP14 |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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NTE4069T | NTE Electronics |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; 30uA Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: hex; 6 Quiescent current: 30µA Kind of gate: NOT Technology: CMOS Mounting: SMD Operating temperature: -55...125°C Case: SO14 |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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NTE2673 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 50V; 3A; 25W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 25W Case: TO220FP Current gain: 60...320 Mounting: THT Frequency: 90MHz |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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NTE2674 | NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 50V; 3A; 25W; TO220FP Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 25W Case: TO220FP Current gain: 60...320 Mounting: THT Frequency: 90MHz |
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2N3054 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 55V; 4A; 25W; TO66 Mounting: THT Case: TO66 Polarisation: bipolar Collector-emitter voltage: 55V Current gain: 25...150 Collector current: 4A Type of transistor: NPN Power dissipation: 25W |
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| NTE5002A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; DO35; single diode; 75uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 75µA |
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NTE5635 | NTE Electronics |
Category: Triacs Description: Triac; 400V; 10A; TO220; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 10A Case: TO220 Gate current: 50mA Mounting: THT Kind of package: tube |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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NTE386 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 500V; 20A; 100W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 20A Power dissipation: 100W Case: TO3 Current gain: 10...60 Mounting: THT |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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| NTE3320 | NTE Electronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 240W; TO3P Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 240W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Turn-on time: 240ns Turn-off time: 430ns |
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| NTE349 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; RF; 18V; 2A; 30W; T72H; Pout: 10W Polarisation: bipolar Type of transistor: NPN Case: T72H Mounting: screw Kind of transistor: RF Power dissipation: 30W Collector current: 2A Frequency: 130...175MHz Collector-emitter voltage: 18V Output power: 10W |
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| NTE345 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; RF; 18V; 5A; 65W; T72H; Pout: 30W Polarisation: bipolar Type of transistor: NPN Case: T72H Mounting: screw Kind of transistor: RF Power dissipation: 65W Collector current: 5A Frequency: 130...175MHz Collector-emitter voltage: 18V Output power: 30W |
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NTE2050 | NTE Electronics |
Category: A/D converters - integrated circuits Description: IC: A/D converter; DIP40; 800mW Mounting: THT Power dissipation: 0.8W Case: DIP40 Operating temperature: 0...70°C Type of integrated circuit: A/D converter |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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| NTE5125A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 5W; 10V; Ø9,52x5,21mm; single diode; 5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 10V Case: Ø9,52x5,21mm Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
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| NTE5126A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 5W; 11V; Ø9,52x5,21mm; single diode; 5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 11V Case: Ø9,52x5,21mm Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
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NTE451 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.35W; TO92; Igt: 30mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 20mA Power dissipation: 0.35W Case: TO92 Gate-source voltage: -25V Mounting: THT Kind of package: bulk Gate current: 30mA |
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| NTE5143A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 5W; 36V; Ø9,52x5,21mm; single diode; 500nA Mounting: THT Tolerance: ±5% Zener voltage: 36V Leakage current: 0.5µA Power dissipation: 5W Type of diode: Zener Case: Ø9,52x5,21mm Semiconductor structure: single diode |
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| NTE2386 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.8A; Idm: 25A; 125W; TO3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 25A Power dissipation: 125W Case: TO3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Kind of channel: enhanced |
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| NTE4928 | NTE Electronics |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 20V; 54A; unidirectional; Ø9,52x5,21mm Max. off-state voltage: 17.1V Semiconductor structure: unidirectional Max. forward impulse current: 54A Breakdown voltage: 20V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: Ø9,52x5,21mm |
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NTE5822 | NTE Electronics |
Category: Stud mounting universal diodes Description: Diode: rectifying; 600V; 1.5V; 12A; cathode to stud; DO4; Ifsm: 200A Fastening thread: 10-32 NF-2A Max. off-state voltage: 0.6kV Max. forward voltage: 1.5V Load current: 12A Semiconductor structure: cathode to stud Reverse recovery time: 400ns Max. forward impulse current: 200A Leakage current: 3mA Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: screw type Case: DO4 |
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| NTE5823 | NTE Electronics |
Category: Stud mounting universal diodes Description: Diode: rectifying; 600V; 1.5V; 12A; anode to stud; DO4; 10-32 NF-2A Type of diode: rectifying Max. off-state voltage: 600V Max. forward voltage: 1.5V Load current: 12A Semiconductor structure: anode to stud Case: DO4 Fastening thread: 10-32 NF-2A Mounting: screw type Features of semiconductor devices: fast switching Max. forward impulse current: 200A Leakage current: 3mA Reverse recovery time: 400ns |
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| NTE5882 | NTE Electronics |
Category: Stud mounting universal diodes Description: Diode: rectifying; 600V; 1.26V; 12A; cathode to stud; DO4 Type of diode: rectifying Max. off-state voltage: 600V Max. forward voltage: 1.26V Load current: 12A Semiconductor structure: cathode to stud Case: DO4 Fastening thread: 10-32 NF-2A Mounting: screw type Max. forward impulse current: 240A |
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NTE5113A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 5W; 3.9V; Ø9,52x5,21mm; single diode; 50uA Type of diode: Zener Power dissipation: 5W Zener voltage: 3.9V Case: Ø9,52x5,21mm Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50µA |
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NTE5344 | NTE Electronics |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 40A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 40A Max. forward impulse current: 300A Electrical mounting: THT Version: square Leads: connectors FASTON Kind of package: bulk |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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| NTE4828 | NTE Electronics |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 5kW; 16.7V; 206A; unidirectional; Ø9,1x9,1mm Max. off-state voltage: 15V Semiconductor structure: unidirectional Max. forward impulse current: 206A Breakdown voltage: 16.7V Leakage current: 10µA Type of diode: TVS Peak pulse power dissipation: 5kW Mounting: THT Case: Ø9,1x9,1mm |
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NTE995 | NTE Electronics |
Category: U/I, U/f, U/U converters Description: IC: f/U converter; DIP14; -40÷85°C; 1.58W Type of integrated circuit: f/U converter Case: DIP14 Mounting: THT DC supply current: 25mA Operating temperature: -40...85°C Power dissipation: 1.58W |
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NTE5326W | NTE Electronics |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 400A Kind of package: bulk Version: square Leads: wire Ø 1.0mm Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 0.4kA Electrical mounting: THT Type of bridge rectifier: single-phase |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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NTE7080 | NTE Electronics |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.235V; ±1%; TO92; bulk; 10mA Type of integrated circuit: voltage reference source Reference voltage: 1.235V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: bulk Maximum output current: 10mA |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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| NTE5557 | NTE Electronics |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 820A; 735A; Igt: 150mA Case: TO200AB Mounting: Press-Pack Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 820A Load current: 735A Gate current: 150mA Max. forward impulse current: 6.2kA |
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NTE5257A | NTE Electronics |
Category: Stud mounting Zener diodes Description: Diode: Zener; 50W; 15V; DO5; screw type; bulk; anode to stud; 10uA Type of diode: Zener Power dissipation: 50W Zener voltage: 15V Case: DO5 Mounting: screw type Tolerance: ±5% Kind of package: bulk Semiconductor structure: anode to stud Leakage current: 10µA |
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NTE2504 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 25V; 2A; 1.2W; TO126 Type of transistor: NPN Case: TO126 Mounting: THT Frequency: 260MHz Power dissipation: 1.2W Collector-emitter voltage: 25V Collector current: 2A Polarisation: bipolar Current gain: 800...3200 |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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NTE123 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.8A; 3W; TO39 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.8A Power dissipation: 3W Case: TO39 Current gain: 35...300 Mounting: THT |
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NTE6412 | NTE Electronics |
Category: Diacs Description: Diac; 1.5A; DO35; 56÷70V; THT; Ammo Pack Type of thyristor: diac Max. load current: 1.5A Case: DO35 Breakover voltage: 56...70V Mounting: THT Kind of package: Ammo Pack |
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NTE5075A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 1W; 16V; DO41/DO15; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 16V Case: DO41/DO15 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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NTE56019 | NTE Electronics |
Category: Triacs Description: Triac; 200V; 25A; TO220ISO; Igt: 80mA Kind of package: tube Type of thyristor: triac Mounting: THT Case: TO220ISO Max. off-state voltage: 200V Max. load current: 25A Gate current: 80mA |
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NTE7241 | NTE Electronics |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,adjustable; 20÷125V; 0.7A; TO220 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 20...125V Output current: 0.7A Case: TO220 Mounting: THT Operating temperature: -65...150°C Number of channels: 1 Input voltage: 1.25...125V |
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NTE74LS13 | NTE Electronics |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; TTL; THT; DIP14 Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: TTL Mounting: THT Case: DIP14 Kind of input: with Schmitt trigger |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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NTE74LS132 | NTE Electronics |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; THT; DIP14 Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: TTL Mounting: THT Case: DIP14 Kind of input: with Schmitt trigger |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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NTE74LS133 | NTE Electronics |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 13; TTL; THT; DIP16 Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 13 Technology: TTL Mounting: THT Case: DIP16 |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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NTE74LS133SM | NTE Electronics |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 13; TTL; SMD; SO16 Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 13 Technology: TTL Mounting: SMD Case: SO16 |
товар відсутній |
| NTE1954 |
|
Виробник: NTE Electronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; TO220; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 14...26V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; TO220; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 14...26V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 259.97 грн |
| 3+ | 217.12 грн |
| 5+ | 165.79 грн |
| NTE5115A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; Ø9,52x5,21mm; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; Ø9,52x5,21mm; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| NTE4994 |
|
Виробник: NTE Electronics
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 350V; 3.08A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 3.08A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 350V; 3.08A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 3.08A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
товар відсутній
| NTE56046 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 600V; 16A; TO220F; Igt: 10/25mA; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220F
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220F; Igt: 10/25mA; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220F
Gate current: 10/25mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
| NTE68 |
|
Виробник: NTE Electronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Current gain: 5...60
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Current gain: 5...60
Mounting: THT
товар відсутній
| NTE40182B |
|
Виробник: NTE Electronics
Category: Counters/dividers
Description: IC: digital; Look-Ahead Carry Generator; CMOS; THT; DIP16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: Look-Ahead Carry Generator
Technology: CMOS
Mounting: THT
Case: DIP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Quiescent current: 3mA
Category: Counters/dividers
Description: IC: digital; Look-Ahead Carry Generator; CMOS; THT; DIP16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: Look-Ahead Carry Generator
Technology: CMOS
Mounting: THT
Case: DIP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Quiescent current: 3mA
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.38 грн |
| 7+ | 122.78 грн |
| NTE4018B |
Виробник: NTE Electronics
Category: Counters/dividers
Description: IC: digital; divide by N; Ch: 5; CMOS; THT; DIP16; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: divide by N
Number of channels: 5
Technology: CMOS
Mounting: THT
Case: DIP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Quiescent current: 600µA
Category: Counters/dividers
Description: IC: digital; divide by N; Ch: 5; CMOS; THT; DIP16; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: divide by N
Number of channels: 5
Technology: CMOS
Mounting: THT
Case: DIP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Quiescent current: 600µA
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.12 грн |
| 11+ | 76.31 грн |
| NTE74LS393 |
Виробник: NTE Electronics
Category: Counters/dividers
Description: IC: digital; 4bit,decade ripple counter; Ch: 2; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; decade ripple counter
Number of channels: 2
Technology: TTL
Mounting: THT
Case: DIP14
Category: Counters/dividers
Description: IC: digital; 4bit,decade ripple counter; Ch: 2; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; decade ripple counter
Number of channels: 2
Technology: TTL
Mounting: THT
Case: DIP14
товар відсутній
| NTE29 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Current gain: 5...60
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Current gain: 5...60
Mounting: THT
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1185.56 грн |
| 3+ | 1041.22 грн |
| NTE4914 |
|
Виробник: NTE Electronics
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.12 грн |
| 5+ | 81.16 грн |
| 10+ | 72.14 грн |
| 12+ | 68.67 грн |
| 33+ | 65.21 грн |
| NTE525 |
|
Виробник: NTE Electronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 2kV; 200mA; Ifsm: 30A; Ø5,33x2,72mm; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 2kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 30A
Case: Ø5,33x2,72mm
Max. forward voltage: 4V
Reverse recovery time: 0.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 2kV; 200mA; Ifsm: 30A; Ø5,33x2,72mm; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 2kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 30A
Case: Ø5,33x2,72mm
Max. forward voltage: 4V
Reverse recovery time: 0.5µs
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.22 грн |
| 3+ | 164.4 грн |
| 7+ | 131.8 грн |
| NTE2635 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 8A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 700V
Collector current: 8A
Power dissipation: 35W
Case: TO220FP
Current gain: 4...23
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 8A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 700V
Collector current: 8A
Power dissipation: 35W
Case: TO220FP
Current gain: 4...23
Mounting: THT
товар відсутній
| NTE5007A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; DO35; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; DO35; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
товар відсутній
| NTE460 |
|
Виробник: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 0.3W; TO72; 10mA
Type of transistor: P-JFET
Polarisation: unipolar
Power dissipation: 0.3W
Case: TO72
Gate-source voltage: 20V
Mounting: THT
Kind of package: bulk
Gate current: 10mA
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 0.3W; TO72; 10mA
Type of transistor: P-JFET
Polarisation: unipolar
Power dissipation: 0.3W
Case: TO72
Gate-source voltage: 20V
Mounting: THT
Kind of package: bulk
Gate current: 10mA
товар відсутній
| NTE4034B |
Виробник: NTE Electronics
Category: Shift registers
Description: IC: digital; bidirectional,bus register; THT; DIP24
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; bus register
Mounting: THT
Case: DIP24
Category: Shift registers
Description: IC: digital; bidirectional,bus register; THT; DIP24
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; bus register
Mounting: THT
Case: DIP24
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 413.86 грн |
| 3+ | 310.77 грн |
| NTE3043 |
|
Виробник: NTE Electronics
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 80V; DIP6
Mounting: THT
Turn-off time: 50µs
Number of channels: 1
Kind of output: transistor
Type of optocoupler: optocoupler
Case: DIP6
Collector-emitter voltage: 80V
Turn-on time: 3.2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 80V; DIP6
Mounting: THT
Turn-off time: 50µs
Number of channels: 1
Kind of output: transistor
Type of optocoupler: optocoupler
Case: DIP6
Collector-emitter voltage: 80V
Turn-on time: 3.2µs
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.44 грн |
| 5+ | 178.28 грн |
| 6+ | 135.27 грн |
| 17+ | 127.64 грн |
| NTE2309 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 12A; 100W; TO3P
Case: TO3P
Mounting: THT
Frequency: 15MHz
Power dissipation: 100W
Collector-emitter voltage: 800V
Collector current: 12A
Type of transistor: NPN
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 12A; 100W; TO3P
Case: TO3P
Mounting: THT
Frequency: 15MHz
Power dissipation: 100W
Collector-emitter voltage: 800V
Collector current: 12A
Type of transistor: NPN
Polarisation: bipolar
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 439.26 грн |
| 3+ | 294.82 грн |
| 8+ | 278.86 грн |
| NTE5296A |
|
Виробник: NTE Electronics
Category: Stud mounting Zener diodes
Description: Diode: Zener; 50W; 200V; DO5; screw type; bulk; anode to stud; 10uA
Type of diode: Zener
Power dissipation: 50W
Zener voltage: 200V
Case: DO5
Mounting: screw type
Tolerance: ±5%
Kind of package: bulk
Semiconductor structure: anode to stud
Leakage current: 10µA
Category: Stud mounting Zener diodes
Description: Diode: Zener; 50W; 200V; DO5; screw type; bulk; anode to stud; 10uA
Type of diode: Zener
Power dissipation: 50W
Zener voltage: 200V
Case: DO5
Mounting: screw type
Tolerance: ±5%
Kind of package: bulk
Semiconductor structure: anode to stud
Leakage current: 10µA
товар відсутній
| NTE5296AK |
|
Виробник: NTE Electronics
Category: Stud mounting Zener diodes
Description: Diode: Zener; 50W; 200V; DO5; screw type; bulk; cathode to stud
Mounting: screw type
Power dissipation: 50W
Kind of package: bulk
Type of diode: Zener
Case: DO5
Tolerance: ±5%
Semiconductor structure: cathode to stud
Zener voltage: 200V
Leakage current: 10µA
Category: Stud mounting Zener diodes
Description: Diode: Zener; 50W; 200V; DO5; screw type; bulk; cathode to stud
Mounting: screw type
Power dissipation: 50W
Kind of package: bulk
Type of diode: Zener
Case: DO5
Tolerance: ±5%
Semiconductor structure: cathode to stud
Zener voltage: 200V
Leakage current: 10µA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1819.05 грн |
| NTE2529 |
|
Виробник: NTE Electronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 15W; TO126
Mounting: THT
Case: TO126
Power dissipation: 15W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 1.5A
Current gain: 80...400
Collector-emitter voltage: 160V
Frequency: 120MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 15W; TO126
Mounting: THT
Case: TO126
Power dissipation: 15W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 1.5A
Current gain: 80...400
Collector-emitter voltage: 160V
Frequency: 120MHz
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.6 грн |
| 5+ | 84.63 грн |
| 10+ | 74.92 грн |
| 13+ | 64.51 грн |
| NTE5883 |
|
Виробник: NTE Electronics
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 1.26V; 12A; anode to stud; DO4; screw type
Mounting: screw type
Type of diode: rectifying
Case: DO4
Fastening thread: 10-32 NF-2A
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.26V
Load current: 12A
Semiconductor structure: anode to stud
Max. forward impulse current: 240A
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 1.26V; 12A; anode to stud; DO4; screw type
Mounting: screw type
Type of diode: rectifying
Case: DO4
Fastening thread: 10-32 NF-2A
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.26V
Load current: 12A
Semiconductor structure: anode to stud
Max. forward impulse current: 240A
товар відсутній
| NTE4069 |
|
Виробник: NTE Electronics
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; THT; DIP14; 3÷18VDC; -55÷125°C; 30uA
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: hex; 6
Quiescent current: 30µA
Kind of gate: NOT
Technology: CMOS
Mounting: THT
Operating temperature: -55...125°C
Case: DIP14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; THT; DIP14; 3÷18VDC; -55÷125°C; 30uA
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: hex; 6
Quiescent current: 30µA
Kind of gate: NOT
Technology: CMOS
Mounting: THT
Operating temperature: -55...125°C
Case: DIP14
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.78 грн |
| 21+ | 39.54 грн |
| 56+ | 37.39 грн |
| NTE4069T |
|
Виробник: NTE Electronics
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; 30uA
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: hex; 6
Quiescent current: 30µA
Kind of gate: NOT
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; 30uA
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: hex; 6
Quiescent current: 30µA
Kind of gate: NOT
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 82.17 грн |
| 13+ | 65.21 грн |
| NTE2673 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 25W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Current gain: 60...320
Mounting: THT
Frequency: 90MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 25W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Current gain: 60...320
Mounting: THT
Frequency: 90MHz
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.78 грн |
| 9+ | 89.49 грн |
| 25+ | 84.63 грн |
| NTE2674 |
|
Виробник: NTE Electronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 25W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Current gain: 60...320
Mounting: THT
Frequency: 90MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 25W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Current gain: 60...320
Mounting: THT
Frequency: 90MHz
товар відсутній
| 2N3054 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 55V; 4A; 25W; TO66
Mounting: THT
Case: TO66
Polarisation: bipolar
Collector-emitter voltage: 55V
Current gain: 25...150
Collector current: 4A
Type of transistor: NPN
Power dissipation: 25W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 55V; 4A; 25W; TO66
Mounting: THT
Case: TO66
Polarisation: bipolar
Collector-emitter voltage: 55V
Current gain: 25...150
Collector current: 4A
Type of transistor: NPN
Power dissipation: 25W
товар відсутній
| NTE5002A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; DO35; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 75µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; DO35; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 75µA
товар відсутній
| NTE5635 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 400V; 10A; TO220; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 10A
Case: TO220
Gate current: 50mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 400V; 10A; TO220; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 10A
Case: TO220
Gate current: 50mA
Mounting: THT
Kind of package: tube
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256.24 грн |
| 3+ | 210.19 грн |
| NTE386 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 20A; 100W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 20A
Power dissipation: 100W
Case: TO3
Current gain: 10...60
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 20A; 100W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 20A
Power dissipation: 100W
Case: TO3
Current gain: 10...60
Mounting: THT
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 981.61 грн |
| 3+ | 862.25 грн |
| NTE3320 |
|
Виробник: NTE Electronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 240W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 240W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Turn-on time: 240ns
Turn-off time: 430ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 240W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 240W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Turn-on time: 240ns
Turn-off time: 430ns
товар відсутній
| NTE349 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 18V; 2A; 30W; T72H; Pout: 10W
Polarisation: bipolar
Type of transistor: NPN
Case: T72H
Mounting: screw
Kind of transistor: RF
Power dissipation: 30W
Collector current: 2A
Frequency: 130...175MHz
Collector-emitter voltage: 18V
Output power: 10W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 18V; 2A; 30W; T72H; Pout: 10W
Polarisation: bipolar
Type of transistor: NPN
Case: T72H
Mounting: screw
Kind of transistor: RF
Power dissipation: 30W
Collector current: 2A
Frequency: 130...175MHz
Collector-emitter voltage: 18V
Output power: 10W
товар відсутній
| NTE345 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 18V; 5A; 65W; T72H; Pout: 30W
Polarisation: bipolar
Type of transistor: NPN
Case: T72H
Mounting: screw
Kind of transistor: RF
Power dissipation: 65W
Collector current: 5A
Frequency: 130...175MHz
Collector-emitter voltage: 18V
Output power: 30W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 18V; 5A; 65W; T72H; Pout: 30W
Polarisation: bipolar
Type of transistor: NPN
Case: T72H
Mounting: screw
Kind of transistor: RF
Power dissipation: 65W
Collector current: 5A
Frequency: 130...175MHz
Collector-emitter voltage: 18V
Output power: 30W
товар відсутній
| NTE2050 |
|
Виробник: NTE Electronics
Category: A/D converters - integrated circuits
Description: IC: A/D converter; DIP40; 800mW
Mounting: THT
Power dissipation: 0.8W
Case: DIP40
Operating temperature: 0...70°C
Type of integrated circuit: A/D converter
Category: A/D converters - integrated circuits
Description: IC: A/D converter; DIP40; 800mW
Mounting: THT
Power dissipation: 0.8W
Case: DIP40
Operating temperature: 0...70°C
Type of integrated circuit: A/D converter
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 708.94 грн |
| 2+ | 452.97 грн |
| 5+ | 428 грн |
| NTE5125A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; Ø9,52x5,21mm; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; Ø9,52x5,21mm; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| NTE5126A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 5W; 11V; Ø9,52x5,21mm; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 11V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 11V; Ø9,52x5,21mm; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 11V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| NTE451 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.35W; TO92; Igt: 30mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: -25V
Mounting: THT
Kind of package: bulk
Gate current: 30mA
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.35W; TO92; Igt: 30mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: -25V
Mounting: THT
Kind of package: bulk
Gate current: 30mA
товар відсутній
| NTE5143A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; Ø9,52x5,21mm; single diode; 500nA
Mounting: THT
Tolerance: ±5%
Zener voltage: 36V
Leakage current: 0.5µA
Power dissipation: 5W
Type of diode: Zener
Case: Ø9,52x5,21mm
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; Ø9,52x5,21mm; single diode; 500nA
Mounting: THT
Tolerance: ±5%
Zener voltage: 36V
Leakage current: 0.5µA
Power dissipation: 5W
Type of diode: Zener
Case: Ø9,52x5,21mm
Semiconductor structure: single diode
товар відсутній
| NTE2386 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.8A; Idm: 25A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.8A; Idm: 25A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| NTE4928 |
|
Виробник: NTE Electronics
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 20V; 54A; unidirectional; Ø9,52x5,21mm
Max. off-state voltage: 17.1V
Semiconductor structure: unidirectional
Max. forward impulse current: 54A
Breakdown voltage: 20V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: Ø9,52x5,21mm
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 20V; 54A; unidirectional; Ø9,52x5,21mm
Max. off-state voltage: 17.1V
Semiconductor structure: unidirectional
Max. forward impulse current: 54A
Breakdown voltage: 20V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: Ø9,52x5,21mm
товар відсутній
| NTE5822 |
|
Виробник: NTE Electronics
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 1.5V; 12A; cathode to stud; DO4; Ifsm: 200A
Fastening thread: 10-32 NF-2A
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 12A
Semiconductor structure: cathode to stud
Reverse recovery time: 400ns
Max. forward impulse current: 200A
Leakage current: 3mA
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: screw type
Case: DO4
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 1.5V; 12A; cathode to stud; DO4; Ifsm: 200A
Fastening thread: 10-32 NF-2A
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 12A
Semiconductor structure: cathode to stud
Reverse recovery time: 400ns
Max. forward impulse current: 200A
Leakage current: 3mA
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: screw type
Case: DO4
товар відсутній
| NTE5823 |
|
Виробник: NTE Electronics
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 1.5V; 12A; anode to stud; DO4; 10-32 NF-2A
Type of diode: rectifying
Max. off-state voltage: 600V
Max. forward voltage: 1.5V
Load current: 12A
Semiconductor structure: anode to stud
Case: DO4
Fastening thread: 10-32 NF-2A
Mounting: screw type
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Leakage current: 3mA
Reverse recovery time: 400ns
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 1.5V; 12A; anode to stud; DO4; 10-32 NF-2A
Type of diode: rectifying
Max. off-state voltage: 600V
Max. forward voltage: 1.5V
Load current: 12A
Semiconductor structure: anode to stud
Case: DO4
Fastening thread: 10-32 NF-2A
Mounting: screw type
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Leakage current: 3mA
Reverse recovery time: 400ns
товар відсутній
| NTE5882 |
|
Виробник: NTE Electronics
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 1.26V; 12A; cathode to stud; DO4
Type of diode: rectifying
Max. off-state voltage: 600V
Max. forward voltage: 1.26V
Load current: 12A
Semiconductor structure: cathode to stud
Case: DO4
Fastening thread: 10-32 NF-2A
Mounting: screw type
Max. forward impulse current: 240A
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 1.26V; 12A; cathode to stud; DO4
Type of diode: rectifying
Max. off-state voltage: 600V
Max. forward voltage: 1.26V
Load current: 12A
Semiconductor structure: cathode to stud
Case: DO4
Fastening thread: 10-32 NF-2A
Mounting: screw type
Max. forward impulse current: 240A
товар відсутній
| NTE5113A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; Ø9,52x5,21mm; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; Ø9,52x5,21mm; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
товар відсутній
| NTE5344 |
|
Виробник: NTE Electronics
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 40A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 40A
Max. forward impulse current: 300A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 40A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 40A
Max. forward impulse current: 300A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Kind of package: bulk
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 949.49 грн |
| 2+ | 738.77 грн |
| 3+ | 698.54 грн |
| NTE4828 |
|
Виробник: NTE Electronics
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 5kW; 16.7V; 206A; unidirectional; Ø9,1x9,1mm
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Max. forward impulse current: 206A
Breakdown voltage: 16.7V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
Case: Ø9,1x9,1mm
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 5kW; 16.7V; 206A; unidirectional; Ø9,1x9,1mm
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Max. forward impulse current: 206A
Breakdown voltage: 16.7V
Leakage current: 10µA
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
Case: Ø9,1x9,1mm
товар відсутній
| NTE995 |
|
Виробник: NTE Electronics
Category: U/I, U/f, U/U converters
Description: IC: f/U converter; DIP14; -40÷85°C; 1.58W
Type of integrated circuit: f/U converter
Case: DIP14
Mounting: THT
DC supply current: 25mA
Operating temperature: -40...85°C
Power dissipation: 1.58W
Category: U/I, U/f, U/U converters
Description: IC: f/U converter; DIP14; -40÷85°C; 1.58W
Type of integrated circuit: f/U converter
Case: DIP14
Mounting: THT
DC supply current: 25mA
Operating temperature: -40...85°C
Power dissipation: 1.58W
товар відсутній
| NTE5326W |
|
Виробник: NTE Electronics
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 400A
Kind of package: bulk
Version: square
Leads: wire Ø 1.0mm
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 400A
Kind of package: bulk
Version: square
Leads: wire Ø 1.0mm
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Type of bridge rectifier: single-phase
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 502.01 грн |
| 3+ | 321.18 грн |
| 7+ | 303.83 грн |
| NTE7080 |
|
Виробник: NTE Electronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; bulk; 10mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 10mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; bulk; 10mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 10mA
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.15 грн |
| 3+ | 180.36 грн |
| 6+ | 135.27 грн |
| 17+ | 127.64 грн |
| NTE5557 |
|
Виробник: NTE Electronics
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 820A; 735A; Igt: 150mA
Case: TO200AB
Mounting: Press-Pack
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 820A
Load current: 735A
Gate current: 150mA
Max. forward impulse current: 6.2kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 820A; 735A; Igt: 150mA
Case: TO200AB
Mounting: Press-Pack
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 820A
Load current: 735A
Gate current: 150mA
Max. forward impulse current: 6.2kA
товар відсутній
| NTE5257A |
|
Виробник: NTE Electronics
Category: Stud mounting Zener diodes
Description: Diode: Zener; 50W; 15V; DO5; screw type; bulk; anode to stud; 10uA
Type of diode: Zener
Power dissipation: 50W
Zener voltage: 15V
Case: DO5
Mounting: screw type
Tolerance: ±5%
Kind of package: bulk
Semiconductor structure: anode to stud
Leakage current: 10µA
Category: Stud mounting Zener diodes
Description: Diode: Zener; 50W; 15V; DO5; screw type; bulk; anode to stud; 10uA
Type of diode: Zener
Power dissipation: 50W
Zener voltage: 15V
Case: DO5
Mounting: screw type
Tolerance: ±5%
Kind of package: bulk
Semiconductor structure: anode to stud
Leakage current: 10µA
товар відсутній
| NTE2504 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 1.2W; TO126
Type of transistor: NPN
Case: TO126
Mounting: THT
Frequency: 260MHz
Power dissipation: 1.2W
Collector-emitter voltage: 25V
Collector current: 2A
Polarisation: bipolar
Current gain: 800...3200
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 1.2W; TO126
Type of transistor: NPN
Case: TO126
Mounting: THT
Frequency: 260MHz
Power dissipation: 1.2W
Collector-emitter voltage: 25V
Collector current: 2A
Polarisation: bipolar
Current gain: 800...3200
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.03 грн |
| 10+ | 83.94 грн |
| 11+ | 75.61 грн |
| 30+ | 71.45 грн |
| NTE123 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 3W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 3W
Case: TO39
Current gain: 35...300
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; 3W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Power dissipation: 3W
Case: TO39
Current gain: 35...300
Mounting: THT
товар відсутній
| NTE6412 |
|
Виробник: NTE Electronics
Category: Diacs
Description: Diac; 1.5A; DO35; 56÷70V; THT; Ammo Pack
Type of thyristor: diac
Max. load current: 1.5A
Case: DO35
Breakover voltage: 56...70V
Mounting: THT
Kind of package: Ammo Pack
Category: Diacs
Description: Diac; 1.5A; DO35; 56÷70V; THT; Ammo Pack
Type of thyristor: diac
Max. load current: 1.5A
Case: DO35
Breakover voltage: 56...70V
Mounting: THT
Kind of package: Ammo Pack
товар відсутній
| NTE5075A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 1W; 16V; DO41/DO15; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Case: DO41/DO15
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 16V; DO41/DO15; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Case: DO41/DO15
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 54.11 грн |
| 14+ | 53.41 грн |
| NTE56019 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 200V; 25A; TO220ISO; Igt: 80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Case: TO220ISO
Max. off-state voltage: 200V
Max. load current: 25A
Gate current: 80mA
Category: Triacs
Description: Triac; 200V; 25A; TO220ISO; Igt: 80mA
Kind of package: tube
Type of thyristor: triac
Mounting: THT
Case: TO220ISO
Max. off-state voltage: 200V
Max. load current: 25A
Gate current: 80mA
товар відсутній
| NTE7241 |
|
Виробник: NTE Electronics
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 20÷125V; 0.7A; TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 20...125V
Output current: 0.7A
Case: TO220
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Input voltage: 1.25...125V
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 20÷125V; 0.7A; TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 20...125V
Output current: 0.7A
Case: TO220
Mounting: THT
Operating temperature: -65...150°C
Number of channels: 1
Input voltage: 1.25...125V
товар відсутній
| NTE74LS13 |
Виробник: NTE Electronics
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: TTL
Mounting: THT
Case: DIP14
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: TTL
Mounting: THT
Case: DIP14
Kind of input: with Schmitt trigger
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.17 грн |
| NTE74LS132 |
Виробник: NTE Electronics
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: TTL
Mounting: THT
Case: DIP14
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: TTL
Mounting: THT
Case: DIP14
Kind of input: with Schmitt trigger
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.76 грн |
| NTE74LS133 |
Виробник: NTE Electronics
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 13; TTL; THT; DIP16
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 13
Technology: TTL
Mounting: THT
Case: DIP16
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 13; TTL; THT; DIP16
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 13
Technology: TTL
Mounting: THT
Case: DIP16
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.72 грн |
| 14+ | 57.58 грн |
| 39+ | 54.8 грн |
| NTE74LS133SM |
Виробник: NTE Electronics
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 13; TTL; SMD; SO16
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 13
Technology: TTL
Mounting: SMD
Case: SO16
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 13; TTL; SMD; SO16
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 13
Technology: TTL
Mounting: SMD
Case: SO16
товар відсутній