Продукція > NTE ELECTRONICS > Всі товари виробника NTE ELECTRONICS (5295) > Сторінка 68 з 89
| Фото | Назва | Виробник | Інформація |
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NTE77 | NTE Electronics |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 30V; 0.4A; 3.5W; TO39 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.4A Power dissipation: 3.5W Case: TO39 Current gain: 30...300 Mounting: THT Frequency: 1.8GHz |
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NTE2512 | NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 10W; TO126 Mounting: THT Case: TO126 Collector-emitter voltage: 60V Power dissipation: 10W Polarisation: bipolar Collector current: 0.5A Frequency: 800MHz Type of transistor: PNP Current gain: 20...320 |
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NTE2521 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 0.3A; 10W; TO126 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 0.3A Power dissipation: 10W Case: TO126 Current gain: 20...120 Mounting: THT Frequency: 400MHz |
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NTE2691 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.5A Power dissipation: 1W Current gain: 80...400 Mounting: THT Frequency: 120MHz |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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NTE74LS73 | NTE Electronics |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; TTL; THT; DIP14 Type of integrated circuit: digital Kind of integrated circuit: JK flip-flop Number of channels: 2 Technology: TTL Mounting: THT Case: DIP14 Trigger: negative-edge-triggered |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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NTE74LS76A | NTE Electronics |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; TTL; THT; DIP16 Type of integrated circuit: digital Kind of integrated circuit: JK flip-flop Number of channels: 2 Technology: TTL Mounting: THT Case: DIP16 Trigger: negative-edge-triggered |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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| NTE5222A | NTE Electronics |
Category: Stud mounting Zener diodes Description: Diode: Zener; 10W; 110V; DO4; screw type; bulk; anode to stud; 10uA Case: DO4 Mounting: screw type Kind of package: bulk Tolerance: ±5% Leakage current: 10µA Power dissipation: 10W Type of diode: Zener Semiconductor structure: anode to stud Zener voltage: 110V |
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| NTE7042 | NTE Electronics |
Category: Motor and PWM drivers Description: IC: driver; bidirectional,motor controller; SIP9; 0.7A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: bidirectional; motor controller Case: SIP9 Output current: 0.7A Number of channels: 2 Supply voltage: 18V DC Mounting: THT Operating temperature: -20...60°C Operating voltage: 4.5...16V |
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NTE233 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.625W; TO92 Frequency: 300...700MHz Case: TO92 Mounting: THT Polarisation: bipolar Current gain: 20...100 Type of transistor: NPN Collector-emitter voltage: 30V Power dissipation: 0.625W Collector current: 0.1A |
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| NTE2677 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 10A; 70W; TO3P-IS Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 800V Collector current: 10A Power dissipation: 70W Case: TO3P-IS Current gain: 8...40 Mounting: THT |
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| NTE4960 | NTE Electronics |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 75V; 14.6A; unidirectional; Ø9,52x5,21mm Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 64.1V Breakdown voltage: 75V Max. forward impulse current: 14.6A Semiconductor structure: unidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 5µA |
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NTE2943 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.9A; Idm: 110A; 40W; TO220F Mounting: THT Polarisation: unipolar Power dissipation: 40W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Case: TO220F Drain-source voltage: 100V Drain current: 11.9A On-state resistance: 77mΩ Type of transistor: N-MOSFET |
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NTE5540 | NTE Electronics |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 55A; 35A; Igt: 40mA; TO218; THT; Ifsm: 550A Case: TO218 Mounting: THT Max. forward impulse current: 550A Gate current: 40mA Max. off-state voltage: 800V Load current: 35A Max. load current: 55A Type of thyristor: thyristor |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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NTE54003 | NTE Electronics |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 55A; 35A; Igt: 40mA; TO220; THT; Ifsm: 550A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 55A Load current: 35A Gate current: 40mA Case: TO220 Mounting: THT Max. forward impulse current: 0.55kA Turn-on time: 2.5µs |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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NTE3042 | NTE Electronics |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V Case: DIP6 Number of channels: 1 Mounting: THT Kind of output: transistor Turn-on time: 2µs Turn-off time: 2µs Insulation voltage: 1.5kV Collector-emitter voltage: 30V Type of optocoupler: optocoupler |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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NTE3017 | NTE Electronics |
Category: IR LEDs Description: IR transmitter; 5mm; blue-gray; 22°; λp max: 950nm; THT; 100mA Type of diode: IR transmitter LED diameter: 5mm LED lens: blue-gray Optical power: 15...20mW/sr Viewing angle: 22° Wavelength of peak sensitivity: 950nm Mounting: THT LED current: 100mA Front: convex Operating voltage: 1.3...1.7V |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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NTE56063 | NTE Electronics |
Category: Triacs Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; high commutation Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 50mA Features of semiconductor devices: high commutation Type of thyristor: triac |
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NTE56064 | NTE Electronics |
Category: Triacs Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; high commutation Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 0.8kV Max. load current: 8A Gate current: 50mA Features of semiconductor devices: high commutation Type of thyristor: triac |
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NTE56065 | NTE Electronics |
Category: Triacs Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; high commutation Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 0.6kV Max. load current: 12A Gate current: 50mA Features of semiconductor devices: high commutation Type of thyristor: triac |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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NTE56067 | NTE Electronics |
Category: Triacs Description: Triac; 800V; 16A; TO220; Igt: 50mA; high commutation Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220 Gate current: 50mA Features of semiconductor devices: high commutation Mounting: THT Kind of package: tube |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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NTE56070 | NTE Electronics |
Category: Triacs Description: Triac; 600V; 25A; TO220; Igt: 50mA; high commutation Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: TO220 Gate current: 50mA Features of semiconductor devices: high commutation Mounting: THT Kind of package: tube |
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| NTE5215A | NTE Electronics |
Category: Stud mounting Zener diodes Description: Diode: Zener; 10W; 68V; DO4; screw type; bulk; anode to stud; 10uA Kind of package: bulk Zener voltage: 68V Leakage current: 10µA Power dissipation: 10W Type of diode: Zener Mounting: screw type Case: DO4 Tolerance: ±5% Semiconductor structure: anode to stud |
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| NTE5215AK | NTE Electronics |
Category: Stud mounting Zener diodes Description: Diode: Zener; 10W; 68V; DO4; screw type; bulk; cathode to stud; 10uA Kind of package: bulk Zener voltage: 68V Leakage current: 10µA Power dissipation: 10W Type of diode: Zener Mounting: screw type Case: DO4 Tolerance: ±5% Semiconductor structure: cathode to stud |
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NTE74LS157 | NTE Electronics |
Category: Analog multiplexers and switches Description: IC: digital; 2 to 1 line,demultiplexer,data selector; Ch: 4; TTL Type of integrated circuit: digital Kind of integrated circuit: 2 to 1 line; data selector; demultiplexer Number of channels: 4 Technology: TTL Mounting: THT Case: DIP16 |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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| NTE1116 | NTE Electronics |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 5W; 30VDC; Amp.class: B; Iquiesc: 20mA Type of integrated circuit: audio amplifier Output power: 5W Mounting: THT Supply voltage: 30V DC Amplifier class: B Operating temperature: -40...150°C Quiescent current: 20mA Input bias current: 5µA |
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| NTE5530 | NTE Electronics |
Category: Stud mounting thyristors Description: Thyristor: stud; 700V; Ifmax: 25A; 16A; Igt: 40mA; TO48; Ifsm: 150A Type of thyristor: stud Max. off-state voltage: 700V Max. load current: 25A Load current: 16A Gate current: 40mA Case: TO48 Max. forward impulse current: 150A Turn-on time: 3µs |
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NTE5008A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode; 5uA Mounting: THT Semiconductor structure: single diode Zener voltage: 4.3V Leakage current: 5µA Power dissipation: 0.5W Type of diode: Zener Case: DO35 Tolerance: ±5% |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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NTE2541 | NTE Electronics |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 120V; 25A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 25A Power dissipation: 120W Case: TO3P Current gain: 2k Mounting: THT Kind of package: bulk |
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NTE5105A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 1W; 200V; DO41/DO15; single diode; 500nA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 200V Leakage current: 0.5µA Power dissipation: 1W Type of diode: Zener Case: DO41/DO15 |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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NTE2928 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Pulsed drain current: 46A Power dissipation: 165W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhanced |
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NTE2945 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.9A; Idm: 40A; 40W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.9A Pulsed drain current: 40A Power dissipation: 40W Case: TO220F Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhanced |
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NTE1848 | NTE Electronics |
Category: Motor and PWM drivers Description: IC: driver; stepper motor controller; SIP18; 1.7A; 40VDC; 20÷30V Type of integrated circuit: driver Output current: 1.7A Supply voltage: 40V DC Case: SIP18 Mounting: THT Kind of integrated circuit: stepper motor controller Operating temperature: -20...80°C Operating voltage: 20...30V |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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NTE150A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 1W; 82V; bag; DO41; single diode; 5uA; 2pcs. Type of diode: Zener Power dissipation: 1W Zener voltage: 82V Kind of package: bag Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Quantity in set/package: 2pcs. |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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| NTE319 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 20V; 50mA; 0.26W; TO72 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 50mA Power dissipation: 0.26W Case: TO72 Current gain: 20...220 Mounting: THT |
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NTE489 | NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-JFET; unipolar; 0.36W; TO92; 50mA Mounting: THT Case: TO92 Kind of package: bulk Power dissipation: 0.36W Polarisation: unipolar Gate-source voltage: 30V Gate current: 50mA Type of transistor: P-JFET |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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NTE458 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 50V; 20mA; 0.25W; TO92; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 20mA Power dissipation: 0.25W Case: TO92 Gate-source voltage: -50V Mounting: THT Kind of package: bulk Gate current: 10mA |
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NTE2915 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 124A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 124A Power dissipation: 200W Case: TO220 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Kind of channel: enhanced |
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NTE2306 | NTE Electronics |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 16A; 125W; TO218 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 16A Power dissipation: 125W Case: TO218 Mounting: THT |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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NTE2340 | NTE Electronics |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 45W Mounting: THT Frequency: 20MHz Kind of package: bulk Power dissipation: 45W Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Current gain: 2k Collector current: 8A Type of transistor: NPN |
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NTE2390 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 30A; 75W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 30A Power dissipation: 75W Case: TO220 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Kind of channel: enhanced |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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NTE324 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 120V; 1.5A; 10W; TO39 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 1.5A Power dissipation: 10W Case: TO39 Current gain: 5...150 Mounting: THT |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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| NTE2347 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 5A; 4W; TO39 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 4W Case: TO39 Current gain: 15...120 Mounting: THT |
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NTE5351 | NTE Electronics |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 5A; 3.2A; Igt: 50mA; TO66; THT; bulk; Ifsm: 65A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 5A Load current: 3.2A Gate current: 50mA Case: TO66 Mounting: THT Kind of package: bulk Max. forward impulse current: 65A |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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NTE2372 | NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W; TO220 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2A Pulsed drain current: -14A Power dissipation: 40W Case: TO220 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Kind of channel: enhanced |
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NTE5631 | NTE Electronics |
Category: Triacs Description: Triac; 50V; 10A; TO220; Igt: 50mA Kind of package: tube Case: TO220 Max. off-state voltage: 50V Max. load current: 10A Gate current: 50mA Type of thyristor: triac Mounting: THT |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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NTE3300 | NTE Electronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 400V; 10A; 30W; TO220FP Mounting: THT Case: TO220FP Gate-emitter voltage: ±25V Collector current: 10A Collector-emitter voltage: 400V Power dissipation: 30W Pulsed collector current: 130A Type of transistor: IGBT Turn-on time: 150ns Turn-off time: 4.5µs |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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NTE3301 | NTE Electronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 400V; 15A; 40W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 15A Power dissipation: 40W Case: TO220FP Gate-emitter voltage: ±25V Pulsed collector current: 170A Mounting: THT Turn-on time: 150ns Turn-off time: 4.5µs |
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NTE53022 | NTE Electronics |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 35A Max. forward impulse current: 0.4kA Version: square Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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NTE2332 | NTE Electronics |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 20W; TO220 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 20W Case: TO220 Current gain: 4k Mounting: THT Kind of package: bulk Frequency: 180MHz |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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NTE1966 | NTE Electronics |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 9V; 1A; TO220FP; THT; -30÷75°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 9V Output current: 1A Case: TO220FP Mounting: THT Operating temperature: -30...75°C Number of channels: 1 Input voltage: 11.5...25V |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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| NTE724 | NTE Electronics |
Category: THT operational amplifiers Description: IC: operational amplifier; 120MHz; Ch: 2; TO5; ±12VDC; bulk; 9dB Number of channels: 2 Operating temperature: -55...125°C Mounting: THT Bandwidth: 120MHz Noise Figure: 9dB Voltage supply range: ± 12V DC Case: TO5 Type of integrated circuit: operational amplifier Power dissipation: 0.45W Kind of package: bulk |
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| NTE927 | NTE Electronics |
Category: THT operational amplifiers Description: IC: operational amplifier; 120MHz; Ch: 2; ±8VDC Type of integrated circuit: operational amplifier Bandwidth: 120MHz Mounting: THT Number of channels: 2 Operating temperature: 0...70°C Voltage supply range: ± 8V DC Power dissipation: 0.5W |
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NTE2942 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 56A; 35W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.8A Pulsed drain current: 56A Power dissipation: 35W Case: TO220F Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of channel: enhanced |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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TIP152 | NTE Electronics |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 400V; 7A; 80W; TO220-3 Mounting: THT Case: TO220-3 Kind of package: tube Power dissipation: 80W Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 400V Collector current: 7A Type of transistor: NPN |
на замовлення 173 шт: термін постачання 21-30 дні (днів) |
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NTE937M | NTE Electronics |
Category: THT operational amplifiers Description: IC: operational amplifier; 20MHz; Ch: 1; DIP8; ±18VDC Type of integrated circuit: operational amplifier Bandwidth: 20MHz Mounting: THT Number of channels: 1 Case: DIP8 Slew rate: 50V/μs Operating temperature: 0...70°C Input offset voltage: 13mV Voltage supply range: ± 18V DC Power dissipation: 0.5W |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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| NTE5129A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 5W; 14V; Ø9,52x5,21mm; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 14V Case: Ø9,52x5,21mm Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
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NTE5068A | NTE Electronics |
Category: THT Zener diodes Description: Diode: Zener; 1W; 4.3V; DO41/DO15; single diode; 10uA Type of diode: Zener Power dissipation: 1W Zener voltage: 4.3V Case: DO41/DO15 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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NTE2302 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 5A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 800V Collector current: 5A Power dissipation: 120W Case: TO3P Mounting: THT Frequency: 3MHz |
товар відсутній |
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NTE996 | NTE Electronics |
Category: THT operational amplifiers Description: IC: transconductance amplifier; DIP8; Ch: 1; 50V/μs; 5mV; ±18VDC Type of integrated circuit: transconductance amplifier Case: DIP8 Mounting: THT Number of channels: 1 Slew rate: 50V/μs Operating temperature: 0...70°C Input offset voltage: 5mV Voltage supply range: ± 18V DC Power dissipation: 0.25W |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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| NTE5207AK | NTE Electronics |
Category: Stud mounting Zener diodes Description: Diode: Zener; 10W; 45V; DO4; screw type; bulk; cathode to stud; 10uA Kind of package: bulk Power dissipation: 10W Semiconductor structure: cathode to stud Leakage current: 10µA Case: DO4 Zener voltage: 45V Type of diode: Zener Tolerance: ±5% Mounting: screw type |
товар відсутній |
| NTE77 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.4A; 3.5W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.4A
Power dissipation: 3.5W
Case: TO39
Current gain: 30...300
Mounting: THT
Frequency: 1.8GHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.4A; 3.5W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.4A
Power dissipation: 3.5W
Case: TO39
Current gain: 30...300
Mounting: THT
Frequency: 1.8GHz
товар відсутній
| NTE2512 |
|
Виробник: NTE Electronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 10W; TO126
Mounting: THT
Case: TO126
Collector-emitter voltage: 60V
Power dissipation: 10W
Polarisation: bipolar
Collector current: 0.5A
Frequency: 800MHz
Type of transistor: PNP
Current gain: 20...320
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 10W; TO126
Mounting: THT
Case: TO126
Collector-emitter voltage: 60V
Power dissipation: 10W
Polarisation: bipolar
Collector current: 0.5A
Frequency: 800MHz
Type of transistor: PNP
Current gain: 20...320
товар відсутній
| NTE2521 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 0.3A; 10W; TO126
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 0.3A
Power dissipation: 10W
Case: TO126
Current gain: 20...120
Mounting: THT
Frequency: 400MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 0.3A; 10W; TO126
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 0.3A
Power dissipation: 10W
Case: TO126
Current gain: 20...120
Mounting: THT
Frequency: 400MHz
товар відсутній
| NTE2691 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Current gain: 80...400
Mounting: THT
Frequency: 120MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Current gain: 80...400
Mounting: THT
Frequency: 120MHz
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121 грн |
| 9+ | 91.1 грн |
| 24+ | 86.23 грн |
| NTE74LS73 |
Виробник: NTE Electronics
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: TTL
Mounting: THT
Case: DIP14
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; TTL; THT; DIP14
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: TTL
Mounting: THT
Case: DIP14
Trigger: negative-edge-triggered
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 374.46 грн |
| NTE74LS76A |
Виробник: NTE Electronics
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; TTL; THT; DIP16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: TTL
Mounting: THT
Case: DIP16
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; TTL; THT; DIP16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: TTL
Mounting: THT
Case: DIP16
Trigger: negative-edge-triggered
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.4 грн |
| 3+ | 333.81 грн |
| 7+ | 315.73 грн |
| NTE5222A |
|
Виробник: NTE Electronics
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 110V; DO4; screw type; bulk; anode to stud; 10uA
Case: DO4
Mounting: screw type
Kind of package: bulk
Tolerance: ±5%
Leakage current: 10µA
Power dissipation: 10W
Type of diode: Zener
Semiconductor structure: anode to stud
Zener voltage: 110V
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 110V; DO4; screw type; bulk; anode to stud; 10uA
Case: DO4
Mounting: screw type
Kind of package: bulk
Tolerance: ±5%
Leakage current: 10µA
Power dissipation: 10W
Type of diode: Zener
Semiconductor structure: anode to stud
Zener voltage: 110V
товар відсутній
| NTE7042 |
|
Виробник: NTE Electronics
Category: Motor and PWM drivers
Description: IC: driver; bidirectional,motor controller; SIP9; 0.7A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: bidirectional; motor controller
Case: SIP9
Output current: 0.7A
Number of channels: 2
Supply voltage: 18V DC
Mounting: THT
Operating temperature: -20...60°C
Operating voltage: 4.5...16V
Category: Motor and PWM drivers
Description: IC: driver; bidirectional,motor controller; SIP9; 0.7A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: bidirectional; motor controller
Case: SIP9
Output current: 0.7A
Number of channels: 2
Supply voltage: 18V DC
Mounting: THT
Operating temperature: -20...60°C
Operating voltage: 4.5...16V
товар відсутній
| NTE233 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.625W; TO92
Frequency: 300...700MHz
Case: TO92
Mounting: THT
Polarisation: bipolar
Current gain: 20...100
Type of transistor: NPN
Collector-emitter voltage: 30V
Power dissipation: 0.625W
Collector current: 0.1A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.625W; TO92
Frequency: 300...700MHz
Case: TO92
Mounting: THT
Polarisation: bipolar
Current gain: 20...100
Type of transistor: NPN
Collector-emitter voltage: 30V
Power dissipation: 0.625W
Collector current: 0.1A
товар відсутній
| NTE2677 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 10A; 70W; TO3P-IS
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 10A
Power dissipation: 70W
Case: TO3P-IS
Current gain: 8...40
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 10A; 70W; TO3P-IS
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 10A
Power dissipation: 70W
Case: TO3P-IS
Current gain: 8...40
Mounting: THT
товар відсутній
| NTE4960 |
|
Виробник: NTE Electronics
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 75V; 14.6A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64.1V
Breakdown voltage: 75V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 75V; 14.6A; unidirectional; Ø9,52x5,21mm
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64.1V
Breakdown voltage: 75V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: Ø9,52x5,21mm
Mounting: THT
Leakage current: 5µA
товар відсутній
| NTE2943 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.9A; Idm: 110A; 40W; TO220F
Mounting: THT
Polarisation: unipolar
Power dissipation: 40W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Case: TO220F
Drain-source voltage: 100V
Drain current: 11.9A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.9A; Idm: 110A; 40W; TO220F
Mounting: THT
Polarisation: unipolar
Power dissipation: 40W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Case: TO220F
Drain-source voltage: 100V
Drain current: 11.9A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
товар відсутній
| NTE5540 |
|
Виробник: NTE Electronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 55A; 35A; Igt: 40mA; TO218; THT; Ifsm: 550A
Case: TO218
Mounting: THT
Max. forward impulse current: 550A
Gate current: 40mA
Max. off-state voltage: 800V
Load current: 35A
Max. load current: 55A
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 55A; 35A; Igt: 40mA; TO218; THT; Ifsm: 550A
Case: TO218
Mounting: THT
Max. forward impulse current: 550A
Gate current: 40mA
Max. off-state voltage: 800V
Load current: 35A
Max. load current: 55A
Type of thyristor: thyristor
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 936.16 грн |
| 2+ | 634.93 грн |
| NTE54003 |
|
Виробник: NTE Electronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 55A; 35A; Igt: 40mA; TO220; THT; Ifsm: 550A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 55A
Load current: 35A
Gate current: 40mA
Case: TO220
Mounting: THT
Max. forward impulse current: 0.55kA
Turn-on time: 2.5µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 55A; 35A; Igt: 40mA; TO220; THT; Ifsm: 550A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 55A
Load current: 35A
Gate current: 40mA
Case: TO220
Mounting: THT
Max. forward impulse current: 0.55kA
Turn-on time: 2.5µs
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 513.76 грн |
| 3+ | 386.66 грн |
| 6+ | 365.8 грн |
| NTE3042 |
|
Виробник: NTE Electronics
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Case: DIP6
Number of channels: 1
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Insulation voltage: 1.5kV
Collector-emitter voltage: 30V
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Case: DIP6
Number of channels: 1
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Insulation voltage: 1.5kV
Collector-emitter voltage: 30V
Type of optocoupler: optocoupler
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.08 грн |
| 5+ | 100.84 грн |
| 11+ | 71.63 грн |
| 31+ | 68.15 грн |
| NTE3017 |
|
Виробник: NTE Electronics
Category: IR LEDs
Description: IR transmitter; 5mm; blue-gray; 22°; λp max: 950nm; THT; 100mA
Type of diode: IR transmitter
LED diameter: 5mm
LED lens: blue-gray
Optical power: 15...20mW/sr
Viewing angle: 22°
Wavelength of peak sensitivity: 950nm
Mounting: THT
LED current: 100mA
Front: convex
Operating voltage: 1.3...1.7V
Category: IR LEDs
Description: IR transmitter; 5mm; blue-gray; 22°; λp max: 950nm; THT; 100mA
Type of diode: IR transmitter
LED diameter: 5mm
LED lens: blue-gray
Optical power: 15...20mW/sr
Viewing angle: 22°
Wavelength of peak sensitivity: 950nm
Mounting: THT
LED current: 100mA
Front: convex
Operating voltage: 1.3...1.7V
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.1 грн |
| 5+ | 203.07 грн |
| 6+ | 148.82 грн |
| 14+ | 140.48 грн |
| NTE56063 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; high commutation
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 50mA
Features of semiconductor devices: high commutation
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; high commutation
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 50mA
Features of semiconductor devices: high commutation
Type of thyristor: triac
товар відсутній
| NTE56064 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; high commutation
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Features of semiconductor devices: high commutation
Type of thyristor: triac
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; high commutation
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 8A
Gate current: 50mA
Features of semiconductor devices: high commutation
Type of thyristor: triac
товар відсутній
| NTE56065 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; high commutation
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50mA
Features of semiconductor devices: high commutation
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; high commutation
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50mA
Features of semiconductor devices: high commutation
Type of thyristor: triac
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.43 грн |
| 3+ | 180.12 грн |
| 6+ | 148.13 грн |
| 15+ | 140.48 грн |
| NTE56067 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 800V; 16A; TO220; Igt: 50mA; high commutation
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220
Gate current: 50mA
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220; Igt: 50mA; high commutation
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220
Gate current: 50mA
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.18 грн |
| 3+ | 180.81 грн |
| 6+ | 157.86 грн |
| 15+ | 149.52 грн |
| NTE56070 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 600V; 25A; TO220; Igt: 50mA; high commutation
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220
Gate current: 50mA
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 25A; TO220; Igt: 50mA; high commutation
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220
Gate current: 50mA
Features of semiconductor devices: high commutation
Mounting: THT
Kind of package: tube
товар відсутній
| NTE5215A |
|
Виробник: NTE Electronics
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 68V; DO4; screw type; bulk; anode to stud; 10uA
Kind of package: bulk
Zener voltage: 68V
Leakage current: 10µA
Power dissipation: 10W
Type of diode: Zener
Mounting: screw type
Case: DO4
Tolerance: ±5%
Semiconductor structure: anode to stud
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 68V; DO4; screw type; bulk; anode to stud; 10uA
Kind of package: bulk
Zener voltage: 68V
Leakage current: 10µA
Power dissipation: 10W
Type of diode: Zener
Mounting: screw type
Case: DO4
Tolerance: ±5%
Semiconductor structure: anode to stud
товар відсутній
| NTE5215AK |
|
Виробник: NTE Electronics
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 68V; DO4; screw type; bulk; cathode to stud; 10uA
Kind of package: bulk
Zener voltage: 68V
Leakage current: 10µA
Power dissipation: 10W
Type of diode: Zener
Mounting: screw type
Case: DO4
Tolerance: ±5%
Semiconductor structure: cathode to stud
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 68V; DO4; screw type; bulk; cathode to stud; 10uA
Kind of package: bulk
Zener voltage: 68V
Leakage current: 10µA
Power dissipation: 10W
Type of diode: Zener
Mounting: screw type
Case: DO4
Tolerance: ±5%
Semiconductor structure: cathode to stud
товар відсутній
| NTE74LS157 |
Виробник: NTE Electronics
Category: Analog multiplexers and switches
Description: IC: digital; 2 to 1 line,demultiplexer,data selector; Ch: 4; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 1 line; data selector; demultiplexer
Number of channels: 4
Technology: TTL
Mounting: THT
Case: DIP16
Category: Analog multiplexers and switches
Description: IC: digital; 2 to 1 line,demultiplexer,data selector; Ch: 4; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 1 line; data selector; demultiplexer
Number of channels: 4
Technology: TTL
Mounting: THT
Case: DIP16
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.37 грн |
| NTE1116 |
Виробник: NTE Electronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 5W; 30VDC; Amp.class: B; Iquiesc: 20mA
Type of integrated circuit: audio amplifier
Output power: 5W
Mounting: THT
Supply voltage: 30V DC
Amplifier class: B
Operating temperature: -40...150°C
Quiescent current: 20mA
Input bias current: 5µA
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 5W; 30VDC; Amp.class: B; Iquiesc: 20mA
Type of integrated circuit: audio amplifier
Output power: 5W
Mounting: THT
Supply voltage: 30V DC
Amplifier class: B
Operating temperature: -40...150°C
Quiescent current: 20mA
Input bias current: 5µA
товар відсутній
| NTE5530 |
|
Виробник: NTE Electronics
Category: Stud mounting thyristors
Description: Thyristor: stud; 700V; Ifmax: 25A; 16A; Igt: 40mA; TO48; Ifsm: 150A
Type of thyristor: stud
Max. off-state voltage: 700V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48
Max. forward impulse current: 150A
Turn-on time: 3µs
Category: Stud mounting thyristors
Description: Thyristor: stud; 700V; Ifmax: 25A; 16A; Igt: 40mA; TO48; Ifsm: 150A
Type of thyristor: stud
Max. off-state voltage: 700V
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO48
Max. forward impulse current: 150A
Turn-on time: 3µs
товар відсутній
| NTE5008A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode; 5uA
Mounting: THT
Semiconductor structure: single diode
Zener voltage: 4.3V
Leakage current: 5µA
Power dissipation: 0.5W
Type of diode: Zener
Case: DO35
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode; 5uA
Mounting: THT
Semiconductor structure: single diode
Zener voltage: 4.3V
Leakage current: 5µA
Power dissipation: 0.5W
Type of diode: Zener
Case: DO35
Tolerance: ±5%
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.11 грн |
| 16+ | 51.46 грн |
| 44+ | 48.68 грн |
| NTE2541 |
|
Виробник: NTE Electronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 25A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 25A
Power dissipation: 120W
Case: TO3P
Current gain: 2k
Mounting: THT
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 25A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 25A
Power dissipation: 120W
Case: TO3P
Current gain: 2k
Mounting: THT
Kind of package: bulk
товар відсутній
| NTE5105A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 1W; 200V; DO41/DO15; single diode; 500nA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 200V
Leakage current: 0.5µA
Power dissipation: 1W
Type of diode: Zener
Case: DO41/DO15
Category: THT Zener diodes
Description: Diode: Zener; 1W; 200V; DO41/DO15; single diode; 500nA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 200V
Leakage current: 0.5µA
Power dissipation: 1W
Type of diode: Zener
Case: DO41/DO15
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.41 грн |
| NTE2928 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| NTE2945 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.9A; Idm: 40A; 40W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.9A
Pulsed drain current: 40A
Power dissipation: 40W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.9A; Idm: 40A; 40W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.9A
Pulsed drain current: 40A
Power dissipation: 40W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| NTE1848 |
|
Виробник: NTE Electronics
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; SIP18; 1.7A; 40VDC; 20÷30V
Type of integrated circuit: driver
Output current: 1.7A
Supply voltage: 40V DC
Case: SIP18
Mounting: THT
Kind of integrated circuit: stepper motor controller
Operating temperature: -20...80°C
Operating voltage: 20...30V
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; SIP18; 1.7A; 40VDC; 20÷30V
Type of integrated circuit: driver
Output current: 1.7A
Supply voltage: 40V DC
Case: SIP18
Mounting: THT
Kind of integrated circuit: stepper motor controller
Operating temperature: -20...80°C
Operating voltage: 20...30V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2008.62 грн |
| 2+ | 1763.61 грн |
| 3+ | 1762.92 грн |
| NTE150A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 1W; 82V; bag; DO41; single diode; 5uA; 2pcs.
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 82V
Kind of package: bag
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Quantity in set/package: 2pcs.
Category: THT Zener diodes
Description: Diode: Zener; 1W; 82V; bag; DO41; single diode; 5uA; 2pcs.
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 82V
Kind of package: bag
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Quantity in set/package: 2pcs.
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.38 грн |
| NTE319 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 0.26W; TO72
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.26W
Case: TO72
Current gain: 20...220
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 0.26W; TO72
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.26W
Case: TO72
Current gain: 20...220
Mounting: THT
товар відсутній
| NTE489 |
|
Виробник: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 0.36W; TO92; 50mA
Mounting: THT
Case: TO92
Kind of package: bulk
Power dissipation: 0.36W
Polarisation: unipolar
Gate-source voltage: 30V
Gate current: 50mA
Type of transistor: P-JFET
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 0.36W; TO92; 50mA
Mounting: THT
Case: TO92
Kind of package: bulk
Power dissipation: 0.36W
Polarisation: unipolar
Gate-source voltage: 30V
Gate current: 50mA
Type of transistor: P-JFET
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.81 грн |
| 4+ | 110.57 грн |
| 9+ | 93.88 грн |
| 24+ | 89.02 грн |
| 25+ | 87.62 грн |
| NTE458 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 50V; 20mA; 0.25W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 20mA
Power dissipation: 0.25W
Case: TO92
Gate-source voltage: -50V
Mounting: THT
Kind of package: bulk
Gate current: 10mA
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 50V; 20mA; 0.25W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 20mA
Power dissipation: 0.25W
Case: TO92
Gate-source voltage: -50V
Mounting: THT
Kind of package: bulk
Gate current: 10mA
товар відсутній
| NTE2915 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 124A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 124A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 124A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 124A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| NTE2306 |
|
Виробник: NTE Electronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 16A; 125W; TO218
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 125W
Case: TO218
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 16A; 125W; TO218
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 125W
Case: TO218
Mounting: THT
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 714.47 грн |
| 2+ | 463.16 грн |
| 5+ | 438.12 грн |
| NTE2340 |
|
Виробник: NTE Electronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 45W
Mounting: THT
Frequency: 20MHz
Kind of package: bulk
Power dissipation: 45W
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Current gain: 2k
Collector current: 8A
Type of transistor: NPN
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 45W
Mounting: THT
Frequency: 20MHz
Kind of package: bulk
Power dissipation: 45W
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Current gain: 2k
Collector current: 8A
Type of transistor: NPN
товар відсутній
| NTE2390 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 30A; 75W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 30A; 75W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.91 грн |
| NTE324 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 1.5A; 10W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 10W
Case: TO39
Current gain: 5...150
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 1.5A; 10W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 1.5A
Power dissipation: 10W
Case: TO39
Current gain: 5...150
Mounting: THT
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 351.25 грн |
| 3+ | 294.17 грн |
| 4+ | 225.32 грн |
| 10+ | 212.8 грн |
| NTE2347 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 4W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 4W
Case: TO39
Current gain: 15...120
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 4W; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 4W
Case: TO39
Current gain: 15...120
Mounting: THT
товар відсутній
| NTE5351 |
|
Виробник: NTE Electronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 5A; 3.2A; Igt: 50mA; TO66; THT; bulk; Ifsm: 65A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 5A
Load current: 3.2A
Gate current: 50mA
Case: TO66
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 65A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 5A; 3.2A; Igt: 50mA; TO66; THT; bulk; Ifsm: 65A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 5A
Load current: 3.2A
Gate current: 50mA
Case: TO66
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 65A
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 803.6 грн |
| 2+ | 540.35 грн |
| 5+ | 510.45 грн |
| NTE2372 |
|
Виробник: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -14A
Power dissipation: 40W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Pulsed drain current: -14A
Power dissipation: 40W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| NTE5631 |
|
Виробник: NTE Electronics
Category: Triacs
Description: Triac; 50V; 10A; TO220; Igt: 50mA
Kind of package: tube
Case: TO220
Max. off-state voltage: 50V
Max. load current: 10A
Gate current: 50mA
Type of thyristor: triac
Mounting: THT
Category: Triacs
Description: Triac; 50V; 10A; TO220; Igt: 50mA
Kind of package: tube
Case: TO220
Max. off-state voltage: 50V
Max. load current: 10A
Gate current: 50mA
Type of thyristor: triac
Mounting: THT
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.22 грн |
| 8+ | 103.62 грн |
| 22+ | 98.06 грн |
| NTE3300 |
|
Виробник: NTE Electronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 30W; TO220FP
Mounting: THT
Case: TO220FP
Gate-emitter voltage: ±25V
Collector current: 10A
Collector-emitter voltage: 400V
Power dissipation: 30W
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 150ns
Turn-off time: 4.5µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 30W; TO220FP
Mounting: THT
Case: TO220FP
Gate-emitter voltage: ±25V
Collector current: 10A
Collector-emitter voltage: 400V
Power dissipation: 30W
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 150ns
Turn-off time: 4.5µs
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 563.94 грн |
| 3+ | 390.14 грн |
| 6+ | 369.27 грн |
| NTE3301 |
|
Виробник: NTE Electronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 15A; 40W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 15A
Power dissipation: 40W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 170A
Mounting: THT
Turn-on time: 150ns
Turn-off time: 4.5µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 15A; 40W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 15A
Power dissipation: 40W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 170A
Mounting: THT
Turn-on time: 150ns
Turn-off time: 4.5µs
товар відсутній
| NTE53022 |
|
Виробник: NTE Electronics
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 429.88 грн |
| 3+ | 274.69 грн |
| 9+ | 260.09 грн |
| NTE2332 |
|
Виробник: NTE Electronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 20W; TO220
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 20W
Case: TO220
Current gain: 4k
Mounting: THT
Kind of package: bulk
Frequency: 180MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 20W; TO220
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 20W
Case: TO220
Current gain: 4k
Mounting: THT
Kind of package: bulk
Frequency: 180MHz
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.97 грн |
| 10+ | 84.84 грн |
| 27+ | 80.67 грн |
| NTE1966 |
|
Виробник: NTE Electronics
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 1A; TO220FP; THT; -30÷75°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 9V
Output current: 1A
Case: TO220FP
Mounting: THT
Operating temperature: -30...75°C
Number of channels: 1
Input voltage: 11.5...25V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 1A; TO220FP; THT; -30÷75°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 9V
Output current: 1A
Case: TO220FP
Mounting: THT
Operating temperature: -30...75°C
Number of channels: 1
Input voltage: 11.5...25V
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.22 грн |
| 3+ | 164.12 грн |
| 7+ | 131.44 грн |
| 17+ | 124.48 грн |
| NTE724 |
|
Виробник: NTE Electronics
Category: THT operational amplifiers
Description: IC: operational amplifier; 120MHz; Ch: 2; TO5; ±12VDC; bulk; 9dB
Number of channels: 2
Operating temperature: -55...125°C
Mounting: THT
Bandwidth: 120MHz
Noise Figure: 9dB
Voltage supply range: ± 12V DC
Case: TO5
Type of integrated circuit: operational amplifier
Power dissipation: 0.45W
Kind of package: bulk
Category: THT operational amplifiers
Description: IC: operational amplifier; 120MHz; Ch: 2; TO5; ±12VDC; bulk; 9dB
Number of channels: 2
Operating temperature: -55...125°C
Mounting: THT
Bandwidth: 120MHz
Noise Figure: 9dB
Voltage supply range: ± 12V DC
Case: TO5
Type of integrated circuit: operational amplifier
Power dissipation: 0.45W
Kind of package: bulk
товар відсутній
| NTE927 |
|
Виробник: NTE Electronics
Category: THT operational amplifiers
Description: IC: operational amplifier; 120MHz; Ch: 2; ±8VDC
Type of integrated circuit: operational amplifier
Bandwidth: 120MHz
Mounting: THT
Number of channels: 2
Operating temperature: 0...70°C
Voltage supply range: ± 8V DC
Power dissipation: 0.5W
Category: THT operational amplifiers
Description: IC: operational amplifier; 120MHz; Ch: 2; ±8VDC
Type of integrated circuit: operational amplifier
Bandwidth: 120MHz
Mounting: THT
Number of channels: 2
Operating temperature: 0...70°C
Voltage supply range: ± 8V DC
Power dissipation: 0.5W
товар відсутній
| NTE2942 |
|
Виробник: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 56A; 35W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 56A; 35W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.46 грн |
| 3+ | 167.6 грн |
| 7+ | 122.4 грн |
| 17+ | 116.14 грн |
| TIP152 |
|
Виробник: NTE Electronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 400V; 7A; 80W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Power dissipation: 80W
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 400V
Collector current: 7A
Type of transistor: NPN
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 400V; 7A; 80W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Power dissipation: 80W
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 400V
Collector current: 7A
Type of transistor: NPN
на замовлення 173 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.48 грн |
| 3+ | 168.99 грн |
| 6+ | 143.26 грн |
| 16+ | 135.61 грн |
| NTE937M |
|
Виробник: NTE Electronics
Category: THT operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 1; DIP8; ±18VDC
Type of integrated circuit: operational amplifier
Bandwidth: 20MHz
Mounting: THT
Number of channels: 1
Case: DIP8
Slew rate: 50V/μs
Operating temperature: 0...70°C
Input offset voltage: 13mV
Voltage supply range: ± 18V DC
Power dissipation: 0.5W
Category: THT operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 1; DIP8; ±18VDC
Type of integrated circuit: operational amplifier
Bandwidth: 20MHz
Mounting: THT
Number of channels: 1
Case: DIP8
Slew rate: 50V/μs
Operating temperature: 0...70°C
Input offset voltage: 13mV
Voltage supply range: ± 18V DC
Power dissipation: 0.5W
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 581.17 грн |
| 2+ | 404.74 грн |
| 6+ | 383.18 грн |
| NTE5129A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; Ø9,52x5,21mm; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; Ø9,52x5,21mm; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Case: Ø9,52x5,21mm
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
товар відсутній
| NTE5068A |
|
Виробник: NTE Electronics
Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.3V; DO41/DO15; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Case: DO41/DO15
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.3V; DO41/DO15; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Case: DO41/DO15
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.93 грн |
| NTE2302 |
|
Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 120W
Case: TO3P
Mounting: THT
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 120W
Case: TO3P
Mounting: THT
Frequency: 3MHz
товар відсутній
| NTE996 |
|
Виробник: NTE Electronics
Category: THT operational amplifiers
Description: IC: transconductance amplifier; DIP8; Ch: 1; 50V/μs; 5mV; ±18VDC
Type of integrated circuit: transconductance amplifier
Case: DIP8
Mounting: THT
Number of channels: 1
Slew rate: 50V/μs
Operating temperature: 0...70°C
Input offset voltage: 5mV
Voltage supply range: ± 18V DC
Power dissipation: 0.25W
Category: THT operational amplifiers
Description: IC: transconductance amplifier; DIP8; Ch: 1; 50V/μs; 5mV; ±18VDC
Type of integrated circuit: transconductance amplifier
Case: DIP8
Mounting: THT
Number of channels: 1
Slew rate: 50V/μs
Operating temperature: 0...70°C
Input offset voltage: 5mV
Voltage supply range: ± 18V DC
Power dissipation: 0.25W
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 773.64 грн |
| 2+ | 496.54 грн |
| 5+ | 469.42 грн |
| NTE5207AK |
|
Виробник: NTE Electronics
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 45V; DO4; screw type; bulk; cathode to stud; 10uA
Kind of package: bulk
Power dissipation: 10W
Semiconductor structure: cathode to stud
Leakage current: 10µA
Case: DO4
Zener voltage: 45V
Type of diode: Zener
Tolerance: ±5%
Mounting: screw type
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 45V; DO4; screw type; bulk; cathode to stud; 10uA
Kind of package: bulk
Power dissipation: 10W
Semiconductor structure: cathode to stud
Leakage current: 10µA
Case: DO4
Zener voltage: 45V
Type of diode: Zener
Tolerance: ±5%
Mounting: screw type
товар відсутній