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TEA1752T/N1,518 TEA1752T/N1,518 NXP USA Inc. TEA1751LT.pdf Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 250kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 38V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 22 V
Part Status: Active
Power (Watts): 250 W
на замовлення 4972 шт:
термін постачання 21-31 дні (днів)
2+161.70 грн
10+115.20 грн
25+105.13 грн
100+88.32 грн
250+83.38 грн
500+80.41 грн
1000+76.68 грн
Мінімальне замовлення: 2
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TEA1791AT/N1,118 TEA1791AT/N1,118 NXP USA Inc. TEA1791AT.pdf Description: IC CTLR SYNC RECTIFIER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 8.5V ~ 38V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SO
Part Status: Active
Current - Supply: 950 µA
DigiKey Programmable: Not Verified
на замовлення 2437 шт:
термін постачання 21-31 дні (днів)
4+79.28 грн
10+55.48 грн
25+50.16 грн
100+41.59 грн
250+38.97 грн
500+37.40 грн
1000+35.51 грн
Мінімальне замовлення: 4
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2N7002BKT,115 2N7002BKT,115 NXP USA Inc. 2N7002BKT_DS_Rev1.pdf Description: MOSFET N-CH 60V 290MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2N7002PT,115 2N7002PT,115 NXP USA Inc. 2N7002PT_DS_Rev1.pdf Description: MOSFET N-CH 60V 310MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2PA1774R,115 2PA1774R,115 NXP USA Inc. 2PA1774_DS_Rev05.pdf Description: TRANS PNP 50V 0.15A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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BA277,115 BA277,115 NXP USA Inc. BA277.pdf Description: DIODE STANDARD 35V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-523
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
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BA278,115 BA278,115 NXP USA Inc. BA278_N.pdf Description: DIODE STANDARD 35V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 700mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-523
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
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BA591,115 BA591,115 NXP USA Inc. BA591.pdf Description: DIODE STANDARD 35V 500MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-323
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
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BAP51-06W,115 BAP51-06W,115 NXP USA Inc. BAP51-06W.pdf Description: RF DIODE PIN 50V 240MW SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70
Current - Max: 50 mA
Power Dissipation (Max): 240 mW
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BAS16T,115 BAS16T,115 NXP USA Inc. BAS16_Series.pdf Description: DIODE STANDARD 100V 155MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 155mA
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BAV70T,115 BAV70T,115 NXP USA Inc. BAV70_Series.pdf Description: DIODE ARRAY GP 100V 150MA SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA (DC)
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BB135,115 BB135,115 NXP USA Inc. BB135.pdf Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.1pF @ 28V, 1MHz
Capacitance Ratio Condition: C0.5/C28
Supplier Device Package: SOD-323
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.0
на замовлення 16644 шт:
термін постачання 21-31 дні (днів)
9+35.32 грн
16+20.11 грн
100+17.58 грн
500+12.51 грн
1000+10.69 грн
Мінімальне замовлення: 9
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BB148,115 BB148,115 NXP USA Inc. BB148_Rev6.pdf Description: DIODE VHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.0
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BB149A,115 BB149A,115 NXP USA Inc. BB149A_Rev4.pdf Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.225pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 10.9
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BB149,115 BB149,115 NXP USA Inc. BB149_Rev6.pdf Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.25pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 10.0
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BB179BLX,315 BB179BLX,315 NXP USA Inc. BB179BLX_Rev2.pdf Description: DIODE UHF VAR CAP 32V SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.25pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD2
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 10.9
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BB181LX,315 BB181LX,315 NXP USA Inc. BB181LX_Rev1.pdf Description: DIODE VHF VAR CAP 32V SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.055pF @ 28V, 1MHz
Capacitance Ratio Condition: C0.5/C28
Supplier Device Package: SOD2
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 16.0
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BB184,115 BB184,115 NXP USA Inc. BB184_Rev3.pdf Description: DIODE UHF VAR CAP 13V SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.13pF @ 10V, 1MHz
Capacitance Ratio Condition: C1/C10
Supplier Device Package: SOD-523
Voltage - Peak Reverse (Max): 13 V
Capacitance Ratio: 7.0
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BC846BT,115 BC846BT,115 NXP USA Inc. BC846_Series.pdf Description: TRANS NPN 65V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BC846T,115 BC846T,115 NXP USA Inc. BC846XW_SER.pdf Description: TRANS NPN 65V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
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BC847BT,115 BC847BT,115 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Qualification: AEC-Q101
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BC847CT,115 BC847CT,115 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BC857BT,115 BC857BT,115 NXP USA Inc. BC856T_857T_Rev_Feb2017.pdf Description: TRANS PNP 45V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BF1100R,215 BF1100R,215 NXP USA Inc. BF1100%28R%29.pdf Description: RF MOSFET 9V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: SOT-143R
Voltage - Rated: 14 V
Voltage - Test: 9 V
Current - Test: 10 mA
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BF1102R,115 BF1102R,115 NXP USA Inc. BF1102%28R%29.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1102,115 BF1102,115 NXP USA Inc. BF1102%28R%29.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1105WR,115 BF1105WR,115 NXP USA Inc. BF1105_R_WR.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.7dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
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BF1105,215 BF1105,215 NXP USA Inc. BF1105%28R%2CWR%29.pdf Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.7dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
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BF1107,215 BF1107,215 NXP USA Inc. BF1107.pdf Description: MOSFET N-CH 3V 10MA SOT23
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BF1109R,215 BF1109R,215 NXP USA Inc. BF1109%28R%2CWR%29.pdf Description: RF MOSFET 9V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: SOT-143R
Voltage - Rated: 11 V
Voltage - Test: 9 V
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BF1201R,215 BF1201R,215 NXP USA Inc. BF1201%28R%2CWR%29_Rev_Oct2010.pdf Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1201,215 BF1201,215 NXP USA Inc. BF1201(R,WR)_Rev_Oct2010.pdf Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1202WR,115 BF1202WR,115 NXP USA Inc. BF1202(R,WR)_Rev_Sept2010.pdf Description: MOSFET 2N-CH 10V 30MA SOT343R
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1202,215 BF1202,215 NXP USA Inc. BF1202%28R%2CWR%29_Rev_Sept2010.pdf Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
товару немає в наявності
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BF1204,115 BF1204,115 NXP USA Inc. BF1204_Rev_Sept2010.pdf Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
товару немає в наявності
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BF1215,115 BF1215,115 NXP USA Inc. BF1215_Rev1.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
товару немає в наявності
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BF1216,115 BF1216,115 NXP USA Inc. BF1216_Rev1.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
товару немає в наявності
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BF1218,115 BF1218,115 NXP USA Inc. BF1218_Rev1.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 32dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
товару немає в наявності
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BF510,215 BF510,215 NXP USA Inc. BF510_511_512_513_CNV.pdf Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
товару немає в наявності
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BF512,215 BF512,215 NXP USA Inc. BF510-513.pdf Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF545A,215 BF545A,215 NXP USA Inc. BF545A%2CB%2CC.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF545B,215 BF545B,215 NXP USA Inc. BF545A%2CB%2CC.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
товару немає в наявності
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BF556A,215 BF556A,215 NXP USA Inc. BF556A%2CB%2CC_Rev4.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 7mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
товару немає в наявності
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BF861C,215 BF861C,215 NXP USA Inc. BF861A_BF861B_BF861C.pdf Description: RF MOSFET JFET SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
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BF904AR,215 BF904AR,215 NXP USA Inc. BF904A%28R%2CWR%29_Rev4.pdf Description: RF MOSFET 4V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
товару немає в наявності
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BF904A,215 BF904A,215 NXP USA Inc. BF904A%28R%2CWR%29_Rev4.pdf Description: RF MOSFET 4V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
товару немає в наявності
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BF904R,215 BF904R,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
товару немає в наявності
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BF904WR,115 BF904WR,115 NXP USA Inc. BF904WR_Rev_Sept2010.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
товару немає в наявності
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BF904,215 BF904,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
товару немає в наявності
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BF908,215 BF908,215 NXP USA Inc. BF908-R_N.pdf Description: RF MOSFET 8V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
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BFG35,115 BFG35,115 NXP USA Inc. BFG35.pdf Description: RF TRANS NPN 18V 4GHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SC-73
Part Status: Obsolete
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BFG520,215 BFG520,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
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BFG520/XR,215 BFG520/XR,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143R
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BFG520/X,215 BFG520/X,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
товару немає в наявності
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BFG540W/X,115 BFG540W/X,115 NXP USA Inc. BFG540W_WX_WXR_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
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BFG540/XR,215 BFG540/XR,215 NXP USA Inc. BFG540_X_XR_Rev5.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
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BFG92A/X,215 BFG92A/X,215 NXP USA Inc. BFG92A_X_Rev6.pdf Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
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BFQ18A,115 BFQ18A,115 NXP USA Inc. BFQ18A_N.pdf Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
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BFQ540,115 BFQ540,115 NXP USA Inc. BFQ540_Rev5.pdf Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
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BFQ591,115 BFQ591,115 NXP USA Inc. BFQ591_Rev4.pdf Description: RF TRANS NPN 15V 7GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 2.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 7GHz
Supplier Device Package: SOT-89-3
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TEA1752T/N1,518 TEA1751LT.pdf
TEA1752T/N1,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 250kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 38V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 22 V
Part Status: Active
Power (Watts): 250 W
на замовлення 4972 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+161.70 грн
10+115.20 грн
25+105.13 грн
100+88.32 грн
250+83.38 грн
500+80.41 грн
1000+76.68 грн
Мінімальне замовлення: 2
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TEA1791AT/N1,118 TEA1791AT.pdf
TEA1791AT/N1,118
Виробник: NXP USA Inc.
Description: IC CTLR SYNC RECTIFIER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 8.5V ~ 38V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SO
Part Status: Active
Current - Supply: 950 µA
DigiKey Programmable: Not Verified
на замовлення 2437 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.28 грн
10+55.48 грн
25+50.16 грн
100+41.59 грн
250+38.97 грн
500+37.40 грн
1000+35.51 грн
Мінімальне замовлення: 4
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2N7002BKT,115 2N7002BKT_DS_Rev1.pdf
2N7002BKT,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 290MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2N7002PT,115 2N7002PT_DS_Rev1.pdf
2N7002PT,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 310MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2PA1774R,115 2PA1774_DS_Rev05.pdf
2PA1774R,115
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.15A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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BA277,115 BA277.pdf
BA277,115
Виробник: NXP USA Inc.
Description: DIODE STANDARD 35V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-523
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
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BA278,115 BA278_N.pdf
BA278,115
Виробник: NXP USA Inc.
Description: DIODE STANDARD 35V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 700mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-523
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
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BA591,115 BA591.pdf
BA591,115
Виробник: NXP USA Inc.
Description: DIODE STANDARD 35V 500MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-323
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
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BAP51-06W,115 BAP51-06W.pdf
BAP51-06W,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 240MW SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70
Current - Max: 50 mA
Power Dissipation (Max): 240 mW
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BAS16T,115 BAS16_Series.pdf
BAS16T,115
Виробник: NXP USA Inc.
Description: DIODE STANDARD 100V 155MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 155mA
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BAV70T,115 BAV70_Series.pdf
BAV70T,115
Виробник: NXP USA Inc.
Description: DIODE ARRAY GP 100V 150MA SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA (DC)
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BB135,115 BB135.pdf
BB135,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.1pF @ 28V, 1MHz
Capacitance Ratio Condition: C0.5/C28
Supplier Device Package: SOD-323
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.0
на замовлення 16644 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+35.32 грн
16+20.11 грн
100+17.58 грн
500+12.51 грн
1000+10.69 грн
Мінімальне замовлення: 9
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BB148,115 BB148_Rev6.pdf
BB148,115
Виробник: NXP USA Inc.
Description: DIODE VHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.0
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BB149A,115 BB149A_Rev4.pdf
BB149A,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.225pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 10.9
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BB149,115 BB149_Rev6.pdf
BB149,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.25pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 10.0
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BB179BLX,315 BB179BLX_Rev2.pdf
BB179BLX,315
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 32V SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.25pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD2
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 10.9
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BB181LX,315 BB181LX_Rev1.pdf
BB181LX,315
Виробник: NXP USA Inc.
Description: DIODE VHF VAR CAP 32V SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.055pF @ 28V, 1MHz
Capacitance Ratio Condition: C0.5/C28
Supplier Device Package: SOD2
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 16.0
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BB184,115 BB184_Rev3.pdf
BB184,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 13V SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.13pF @ 10V, 1MHz
Capacitance Ratio Condition: C1/C10
Supplier Device Package: SOD-523
Voltage - Peak Reverse (Max): 13 V
Capacitance Ratio: 7.0
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BC846BT,115 BC846_Series.pdf
BC846BT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BC846T,115 BC846XW_SER.pdf
BC846T,115
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
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BC847BT,115 BC847_Rev_Feb2017.pdf
BC847BT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Qualification: AEC-Q101
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BC847CT,115 BC847_Rev_Feb2017.pdf
BC847CT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BC857BT,115 BC856T_857T_Rev_Feb2017.pdf
BC857BT,115
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BF1100R,215 BF1100%28R%29.pdf
BF1100R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 9V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: SOT-143R
Voltage - Rated: 14 V
Voltage - Test: 9 V
Current - Test: 10 mA
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BF1102R,115 BF1102%28R%29.pdf
BF1102R,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1102,115 BF1102%28R%29.pdf
BF1102,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1105WR,115 BF1105_R_WR.pdf
BF1105WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.7dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
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BF1105,215 BF1105%28R%2CWR%29.pdf
BF1105,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.7dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
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BF1107,215 BF1107.pdf
BF1107,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 3V 10MA SOT23
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BF1109R,215 BF1109%28R%2CWR%29.pdf
BF1109R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 9V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: SOT-143R
Voltage - Rated: 11 V
Voltage - Test: 9 V
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BF1201R,215 BF1201%28R%2CWR%29_Rev_Oct2010.pdf
BF1201R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1201,215 BF1201(R,WR)_Rev_Oct2010.pdf
BF1201,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1202WR,115 BF1202(R,WR)_Rev_Sept2010.pdf
BF1202WR,115
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 10V 30MA SOT343R
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1202,215 BF1202%28R%2CWR%29_Rev_Sept2010.pdf
BF1202,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1204,115 BF1204_Rev_Sept2010.pdf
BF1204,115
Виробник: NXP USA Inc.
Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1215,115 BF1215_Rev1.pdf
BF1215,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF1216,115 BF1216_Rev1.pdf
BF1216,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF1218,115 BF1218_Rev1.pdf
BF1218,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 32dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF510,215 BF510_511_512_513_CNV.pdf
BF510,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF512,215 BF510-513.pdf
BF512,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF545A,215 BF545A%2CB%2CC.pdf
BF545A,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF545B,215 BF545A%2CB%2CC.pdf
BF545B,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF556A,215 BF556A%2CB%2CC_Rev4.pdf
BF556A,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 7mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF861C,215 BF861A_BF861B_BF861C.pdf
BF861C,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
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BF904AR,215 BF904A%28R%2CWR%29_Rev4.pdf
BF904AR,215
Виробник: NXP USA Inc.
Description: RF MOSFET 4V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
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BF904A,215 BF904A%28R%2CWR%29_Rev4.pdf
BF904A,215
Виробник: NXP USA Inc.
Description: RF MOSFET 4V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
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BF904R,215 BF904%28R%29_Rev6.pdf
BF904R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904WR,115 BF904WR_Rev_Sept2010.pdf
BF904WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904,215 BF904%28R%29_Rev6.pdf
BF904,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF908,215 BF908-R_N.pdf
BF908,215
Виробник: NXP USA Inc.
Description: RF MOSFET 8V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
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BFG35,115 BFG35.pdf
BFG35,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 18V 4GHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SC-73
Part Status: Obsolete
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BFG520,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
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BFG520/XR,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520/XR,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143R
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BFG520/X,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFG540W/X,115 BFG540W_WX_WXR_Rev_Oct2010.pdf
BFG540W/X,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
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BFG540/XR,215 BFG540_X_XR_Rev5.pdf
BFG540/XR,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
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BFG92A/X,215 BFG92A_X_Rev6.pdf
BFG92A/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
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BFQ18A,115 BFQ18A_N.pdf
BFQ18A,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
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BFQ540,115 BFQ540_Rev5.pdf
BFQ540,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
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BFQ591,115 BFQ591_Rev4.pdf
BFQ591,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 7GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 2.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 7GHz
Supplier Device Package: SOT-89-3
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