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TEA1752LT/N1,518 TEA1752LT/N1,518 NXP USA Inc. TEA1752LT.pdf Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 250kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 38V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 22 V
Part Status: Active
Power (Watts): 250 W
на замовлення 795 шт:
термін постачання 21-31 дні (днів)
2+165.20 грн
10+118.25 грн
25+107.92 грн
100+90.67 грн
250+85.60 грн
500+82.55 грн
Мінімальне замовлення: 2
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TEA1752T/N1,518 TEA1752T/N1,518 NXP USA Inc. TEA1751LT.pdf Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 250kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 38V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 22 V
Part Status: Active
Power (Watts): 250 W
на замовлення 4472 шт:
термін постачання 21-31 дні (днів)
2+165.20 грн
10+117.85 грн
25+107.58 грн
100+90.36 грн
250+85.31 грн
500+82.27 грн
1000+78.45 грн
Мінімальне замовлення: 2
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TEA1791AT/N1,118 TEA1791AT/N1,118 NXP USA Inc. TEA1791AT.pdf Description: IC CTLR SYNC RECTIFIER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 8.5V ~ 38V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SO
Part Status: Active
Current - Supply: 950 µA
DigiKey Programmable: Not Verified
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)
5+81.37 грн
10+56.75 грн
25+51.32 грн
100+42.55 грн
250+39.87 грн
500+38.26 грн
1000+36.33 грн
Мінімальне замовлення: 5
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2N7002BKT,115 2N7002BKT,115 NXP USA Inc. 2N7002BKT_DS_Rev1.pdf Description: MOSFET N-CH 60V 290MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2N7002PT,115 2N7002PT,115 NXP USA Inc. 2N7002PT_DS_Rev1.pdf Description: MOSFET N-CH 60V 310MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2PA1774R,115 2PA1774R,115 NXP USA Inc. 2PA1774_DS_Rev05.pdf Description: TRANS PNP 50V 0.15A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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BA277,115 BA277,115 NXP USA Inc. BA277.pdf Description: DIODE STANDARD 35V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-523
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
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BA278,115 BA278,115 NXP USA Inc. BA278_N.pdf Description: DIODE STANDARD 35V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 700mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-523
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
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BA591,115 BA591,115 NXP USA Inc. BA591.pdf Description: DIODE STANDARD 35V 500MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-323
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
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BAP51-06W,115 BAP51-06W,115 NXP USA Inc. BAP51-06W.pdf Description: RF DIODE PIN 50V 240MW SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70
Current - Max: 50 mA
Power Dissipation (Max): 240 mW
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BAS16T,115 BAS16T,115 NXP USA Inc. BAS16_Series.pdf Description: DIODE STANDARD 100V 155MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 155mA
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BAV70T,115 BAV70T,115 NXP USA Inc. BAV70_Series.pdf Description: DIODE ARRAY GP 100V 150MA SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA (DC)
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BB135,115 BB135,115 NXP USA Inc. BB135.pdf Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.1pF @ 28V, 1MHz
Capacitance Ratio Condition: C0.5/C28
Supplier Device Package: SOD-323
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.0
на замовлення 12824 шт:
термін постачання 21-31 дні (днів)
10+34.52 грн
16+20.26 грн
100+17.99 грн
500+12.80 грн
1000+11.49 грн
Мінімальне замовлення: 10
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BB148,115 BB148,115 NXP USA Inc. BB148_Rev6.pdf Description: DIODE VHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.0
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BB149A,115 BB149A,115 NXP USA Inc. BB149A_Rev4.pdf Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.225pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 10.9
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BB149,115 BB149,115 NXP USA Inc. BB149_Rev6.pdf Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.25pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 10.0
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BB179BLX,315 BB179BLX,315 NXP USA Inc. BB179BLX_Rev2.pdf Description: DIODE UHF VAR CAP 32V SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.25pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD2
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 10.9
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BB181LX,315 BB181LX,315 NXP USA Inc. BB181LX_Rev1.pdf Description: DIODE VHF VAR CAP 32V SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.055pF @ 28V, 1MHz
Capacitance Ratio Condition: C0.5/C28
Supplier Device Package: SOD2
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 16.0
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BB184,115 BB184,115 NXP USA Inc. BB184_Rev3.pdf Description: DIODE UHF VAR CAP 13V SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.13pF @ 10V, 1MHz
Capacitance Ratio Condition: C1/C10
Supplier Device Package: SOD-523
Voltage - Peak Reverse (Max): 13 V
Capacitance Ratio: 7.0
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BC846BT,115 BC846BT,115 NXP USA Inc. BC846_Series.pdf Description: TRANS NPN 65V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BC846T,115 BC846T,115 NXP USA Inc. BC846XW_SER.pdf Description: TRANS NPN 65V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
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BC847BT,115 BC847BT,115 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Qualification: AEC-Q101
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BC847CT,115 BC847CT,115 NXP USA Inc. BC847_Rev_Feb2017.pdf Description: TRANS NPN 45V 0.1A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BC857BT,115 BC857BT,115 NXP USA Inc. BC856T_857T_Rev_Feb2017.pdf Description: TRANS PNP 45V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BF1100R,215 BF1100R,215 NXP USA Inc. BF1100%28R%29.pdf Description: RF MOSFET 9V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: SOT-143R
Voltage - Rated: 14 V
Voltage - Test: 9 V
Current - Test: 10 mA
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BF1102R,115 BF1102R,115 NXP USA Inc. BF1102%28R%29.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1102,115 BF1102,115 NXP USA Inc. BF1102%28R%29.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1107,215 BF1107,215 NXP USA Inc. BF1107.pdf Description: MOSFET N-CH 3V 10MA SOT23
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BF1109R,215 BF1109R,215 NXP USA Inc. BF1109%28R%2CWR%29.pdf Description: RF MOSFET 9V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: SOT-143R
Voltage - Rated: 11 V
Voltage - Test: 9 V
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BF1201R,215 BF1201R,215 NXP USA Inc. BF1201%28R%2CWR%29_Rev_Oct2010.pdf Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1202WR,115 BF1202WR,115 NXP USA Inc. BF1202(R,WR)_Rev_Sept2010.pdf Description: MOSFET 2N-CH 10V 30MA SOT343R
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1202,215 BF1202,215 NXP USA Inc. BF1202%28R%2CWR%29_Rev_Sept2010.pdf Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1204,115 BF1204,115 NXP USA Inc. BF1204_Rev_Sept2010.pdf Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
товару немає в наявності
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BF1216,115 BF1216,115 NXP USA Inc. BF1216_Rev1.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
товару немає в наявності
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BF512,215 BF512,215 NXP USA Inc. BF510-513.pdf Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
товару немає в наявності
В кошику  од. на суму  грн.
BF545A,215 BF545A,215 NXP USA Inc. BF545A%2CB%2CC.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
товару немає в наявності
В кошику  од. на суму  грн.
BF545B,215 BF545B,215 NXP USA Inc. BF545A%2CB%2CC.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
товару немає в наявності
В кошику  од. на суму  грн.
BF861C,215 BF861C,215 NXP USA Inc. BF861A_BF861B_BF861C.pdf Description: RF MOSFET JFET SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BF904AR,215 BF904AR,215 NXP USA Inc. BF904A%28R%2CWR%29_Rev4.pdf Description: RF MOSFET 4V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
товару немає в наявності
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BF904R,215 BF904R,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
товару немає в наявності
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BF904WR,115 BF904WR,115 NXP USA Inc. BF904WR_Rev_Sept2010.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
товару немає в наявності
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BF904,215 BF904,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
товару немає в наявності
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BF908,215 BF908,215 NXP USA Inc. BF908-R_N.pdf Description: RF MOSFET 8V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
товару немає в наявності
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BFG520,215 BFG520,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
товару немає в наявності
В кошику  од. на суму  грн.
BFG520/XR,215 BFG520/XR,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143R
товару немає в наявності
В кошику  од. на суму  грн.
BFG520/X,215 BFG520/X,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFG540W/X,115 BFG540W/X,115 NXP USA Inc. BFG540W_WX_WXR_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFG540/XR,215 BFG540/XR,215 NXP USA Inc. BFG540_X_XR_Rev5.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFG92A/X,215 BFG92A/X,215 NXP USA Inc. BFG92A_X_Rev6.pdf Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
товару немає в наявності
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BFQ18A,115 BFQ18A,115 NXP USA Inc. BFQ18A_N.pdf Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
5+69.86 грн
10+48.52 грн
25+43.78 грн
100+36.19 грн
250+33.86 грн
500+32.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BFQ540,115 BFQ540,115 NXP USA Inc. BFQ540_Rev5.pdf Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
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В кошику  од. на суму  грн.
BFQ591,115 BFQ591,115 NXP USA Inc. BFQ591_Rev4.pdf Description: RF TRANS NPN 15V 7GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 2.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 7GHz
Supplier Device Package: SOT-89-3
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BFQ67W,115 BFQ67W,115 NXP USA Inc. BFQ67W_Rev_Oct2010.pdf Description: RF TRANS NPN 10V 8GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
товару немає в наявності
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BFR31,215 BFR31,215 NXP USA Inc. BFR30%2C31.pdf Description: JFET N-CH 10MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V
товару немає в наявності
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BGA2801,115 BGA2801,115 NXP USA Inc. BGA2801.pdf Description: IC RF AMP GPS 0HZ-2.2GHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 3.6V
Gain: 23dB
Current - Supply: 14.3mA
Noise Figure: 3.9dB
P1dB: 0dBm
Test Frequency: 2.15GHz
Supplier Device Package: 6-TSSOP
на замовлення 2691 шт:
термін постачання 21-31 дні (днів)
10+36.16 грн
11+30.71 грн
25+27.73 грн
100+22.76 грн
250+19.97 грн
500+17.65 грн
1000+13.70 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BGA2866,115 BGA2866,115 NXP USA Inc. BGA2866.pdf Description: IC RF AMP GPS 0HZ-2.2GHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 24.3dB
Current - Supply: 17.4mA
Noise Figure: 3.9dB
P1dB: 3dBm
Test Frequency: 2.15GHz
Supplier Device Package: 6-TSSOP
на замовлення 10196 шт:
термін постачання 21-31 дні (днів)
14+23.84 грн
17+19.15 грн
25+18.05 грн
100+15.48 грн
250+14.60 грн
500+13.97 грн
1000+13.17 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BLT81,115 BLT81,115 NXP USA Inc. BLT81.pdf Description: RF TRANS NPN 9.5V 900MHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 8dB
Power - Max: 2W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 9.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Frequency - Transition: 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
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В кошику  од. на суму  грн.
PBR941B,215 PBR941B,215 NXP USA Inc. PBR941B.pdf Description: RF TRANS NPN 10V 9GHZ TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Supplier Device Package: SOT-23 (TO-236AB)
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PCF8564ACX9/B/1,02 NXP USA Inc. PCF8564A.pdf Description: IC RTC CLOCK/CALENDAR I2C DIE
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output, Watchdog Timer
Package / Case: Die
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: Die
Current - Timekeeping (Max): 0.6µA ~ 0.75µA @ 2V ~ 5V
Part Status: Obsolete
DigiKey Programmable: Not Verified
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PMBF4391,215 PMBF4391,215 NXP USA Inc. PMBF4391-4393.pdf Description: JFET N-CH 40V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
товару немає в наявності
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TEA1752LT/N1,518 TEA1752LT.pdf
TEA1752LT/N1,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 250kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 38V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 22 V
Part Status: Active
Power (Watts): 250 W
на замовлення 795 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.20 грн
10+118.25 грн
25+107.92 грн
100+90.67 грн
250+85.60 грн
500+82.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TEA1752T/N1,518 TEA1751LT.pdf
TEA1752T/N1,518
Виробник: NXP USA Inc.
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 250kHz
Internal Switch(s): No
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 38V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 22 V
Part Status: Active
Power (Watts): 250 W
на замовлення 4472 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.20 грн
10+117.85 грн
25+107.58 грн
100+90.36 грн
250+85.31 грн
500+82.27 грн
1000+78.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TEA1791AT/N1,118 TEA1791AT.pdf
TEA1791AT/N1,118
Виробник: NXP USA Inc.
Description: IC CTLR SYNC RECTIFIER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 8.5V ~ 38V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SO
Part Status: Active
Current - Supply: 950 µA
DigiKey Programmable: Not Verified
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+81.37 грн
10+56.75 грн
25+51.32 грн
100+42.55 грн
250+39.87 грн
500+38.26 грн
1000+36.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2N7002BKT,115 2N7002BKT_DS_Rev1.pdf
2N7002BKT,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 290MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2N7002PT,115 2N7002PT_DS_Rev1.pdf
2N7002PT,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 60V 310MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2PA1774R,115 2PA1774_DS_Rev05.pdf
2PA1774R,115
Виробник: NXP USA Inc.
Description: TRANS PNP 50V 0.15A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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BA277,115 BA277.pdf
BA277,115
Виробник: NXP USA Inc.
Description: DIODE STANDARD 35V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-523
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
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BA278,115 BA278_N.pdf
BA278,115
Виробник: NXP USA Inc.
Description: DIODE STANDARD 35V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 700mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-523
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
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BA591,115 BA591.pdf
BA591,115
Виробник: NXP USA Inc.
Description: DIODE STANDARD 35V 500MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOD-323
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
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BAP51-06W,115 BAP51-06W.pdf
BAP51-06W,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 240MW SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70
Current - Max: 50 mA
Power Dissipation (Max): 240 mW
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BAS16T,115 BAS16_Series.pdf
BAS16T,115
Виробник: NXP USA Inc.
Description: DIODE STANDARD 100V 155MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 155mA
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BAV70T,115 BAV70_Series.pdf
BAV70T,115
Виробник: NXP USA Inc.
Description: DIODE ARRAY GP 100V 150MA SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA (DC)
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BB135,115 BB135.pdf
BB135,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.1pF @ 28V, 1MHz
Capacitance Ratio Condition: C0.5/C28
Supplier Device Package: SOD-323
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.0
на замовлення 12824 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.52 грн
16+20.26 грн
100+17.99 грн
500+12.80 грн
1000+11.49 грн
Мінімальне замовлення: 10
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BB148,115 BB148_Rev6.pdf
BB148,115
Виробник: NXP USA Inc.
Description: DIODE VHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.0
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BB149A,115 BB149A_Rev4.pdf
BB149A,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.225pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 10.9
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BB149,115 BB149_Rev6.pdf
BB149,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 30V SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.25pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 10.0
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BB179BLX,315 BB179BLX_Rev2.pdf
BB179BLX,315
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 32V SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.25pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD2
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 10.9
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BB181LX,315 BB181LX_Rev1.pdf
BB181LX,315
Виробник: NXP USA Inc.
Description: DIODE VHF VAR CAP 32V SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.055pF @ 28V, 1MHz
Capacitance Ratio Condition: C0.5/C28
Supplier Device Package: SOD2
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 16.0
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BB184,115 BB184_Rev3.pdf
BB184,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 13V SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.13pF @ 10V, 1MHz
Capacitance Ratio Condition: C1/C10
Supplier Device Package: SOD-523
Voltage - Peak Reverse (Max): 13 V
Capacitance Ratio: 7.0
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BC846BT,115 BC846_Series.pdf
BC846BT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BC846T,115 BC846XW_SER.pdf
BC846T,115
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
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BC847BT,115 BC847_Rev_Feb2017.pdf
BC847BT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Qualification: AEC-Q101
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BC847CT,115 BC847_Rev_Feb2017.pdf
BC847CT,115
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.1A SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BC857BT,115 BC856T_857T_Rev_Feb2017.pdf
BC857BT,115
Виробник: NXP USA Inc.
Description: TRANS PNP 45V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
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BF1100R,215 BF1100%28R%29.pdf
BF1100R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 9V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: SOT-143R
Voltage - Rated: 14 V
Voltage - Test: 9 V
Current - Test: 10 mA
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BF1102R,115 BF1102%28R%29.pdf
BF1102R,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1102,115 BF1102%28R%29.pdf
BF1102,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1107,215 BF1107.pdf
BF1107,215
Виробник: NXP USA Inc.
Description: MOSFET N-CH 3V 10MA SOT23
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BF1109R,215 BF1109%28R%2CWR%29.pdf
BF1109R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 9V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: SOT-143R
Voltage - Rated: 11 V
Voltage - Test: 9 V
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BF1201R,215 BF1201%28R%2CWR%29_Rev_Oct2010.pdf
BF1201R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1202WR,115 BF1202(R,WR)_Rev_Sept2010.pdf
BF1202WR,115
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 10V 30MA SOT343R
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1202,215 BF1202%28R%2CWR%29_Rev_Sept2010.pdf
BF1202,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1204,115 BF1204_Rev_Sept2010.pdf
BF1204,115
Виробник: NXP USA Inc.
Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1216,115 BF1216_Rev1.pdf
BF1216,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF512,215 BF510-513.pdf
BF512,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF545A,215 BF545A%2CB%2CC.pdf
BF545A,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF545B,215 BF545A%2CB%2CC.pdf
BF545B,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF861C,215 BF861A_BF861B_BF861C.pdf
BF861C,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
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BF904AR,215 BF904A%28R%2CWR%29_Rev4.pdf
BF904AR,215
Виробник: NXP USA Inc.
Description: RF MOSFET 4V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
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BF904R,215 BF904%28R%29_Rev6.pdf
BF904R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904WR,115 BF904WR_Rev_Sept2010.pdf
BF904WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904,215 BF904%28R%29_Rev6.pdf
BF904,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF908,215 BF908-R_N.pdf
BF908,215
Виробник: NXP USA Inc.
Description: RF MOSFET 8V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
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BFG520,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
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BFG520/XR,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520/XR,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143R
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BFG520/X,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFG540W/X,115 BFG540W_WX_WXR_Rev_Oct2010.pdf
BFG540W/X,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
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BFG540/XR,215 BFG540_X_XR_Rev5.pdf
BFG540/XR,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
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BFG92A/X,215 BFG92A_X_Rev6.pdf
BFG92A/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
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BFQ18A,115 BFQ18A_N.pdf
BFQ18A,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.86 грн
10+48.52 грн
25+43.78 грн
100+36.19 грн
250+33.86 грн
500+32.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BFQ540,115 BFQ540_Rev5.pdf
BFQ540,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
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BFQ591,115 BFQ591_Rev4.pdf
BFQ591,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 7GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 2.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 7GHz
Supplier Device Package: SOT-89-3
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BFQ67W,115 BFQ67W_Rev_Oct2010.pdf
BFQ67W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFR31,215 BFR30%2C31.pdf
BFR31,215
Виробник: NXP USA Inc.
Description: JFET N-CH 10MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V
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BGA2801,115 BGA2801.pdf
BGA2801,115
Виробник: NXP USA Inc.
Description: IC RF AMP GPS 0HZ-2.2GHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 3.6V
Gain: 23dB
Current - Supply: 14.3mA
Noise Figure: 3.9dB
P1dB: 0dBm
Test Frequency: 2.15GHz
Supplier Device Package: 6-TSSOP
на замовлення 2691 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.16 грн
11+30.71 грн
25+27.73 грн
100+22.76 грн
250+19.97 грн
500+17.65 грн
1000+13.70 грн
Мінімальне замовлення: 10
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BGA2866,115 BGA2866.pdf
BGA2866,115
Виробник: NXP USA Inc.
Description: IC RF AMP GPS 0HZ-2.2GHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 24.3dB
Current - Supply: 17.4mA
Noise Figure: 3.9dB
P1dB: 3dBm
Test Frequency: 2.15GHz
Supplier Device Package: 6-TSSOP
на замовлення 10196 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.84 грн
17+19.15 грн
25+18.05 грн
100+15.48 грн
250+14.60 грн
500+13.97 грн
1000+13.17 грн
Мінімальне замовлення: 14
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BLT81,115 BLT81.pdf
BLT81,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 9.5V 900MHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 8dB
Power - Max: 2W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 9.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Frequency - Transition: 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
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PBR941B,215 PBR941B.pdf
PBR941B,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 9GHZ TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Supplier Device Package: SOT-23 (TO-236AB)
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PCF8564ACX9/B/1,02 PCF8564A.pdf
Виробник: NXP USA Inc.
Description: IC RTC CLOCK/CALENDAR I2C DIE
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output, Watchdog Timer
Package / Case: Die
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: Die
Current - Timekeeping (Max): 0.6µA ~ 0.75µA @ 2V ~ 5V
Part Status: Obsolete
DigiKey Programmable: Not Verified
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PMBF4391,215 PMBF4391-4393.pdf
PMBF4391,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
товару немає в наявності
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