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BF1202WR,115 BF1202WR,115 NXP USA Inc. BF1202(R,WR)_Rev_Sept2010.pdf Description: MOSFET 2N-CH 10V 30MA SOT343R
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1202,215 BF1202,215 NXP USA Inc. BF1202%28R%2CWR%29_Rev_Sept2010.pdf Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1204,115 BF1204,115 NXP USA Inc. BF1204_Rev_Sept2010.pdf Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1215,115 BF1215,115 NXP USA Inc. BF1215_Rev1.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF1216,115 BF1216,115 NXP USA Inc. BF1216_Rev1.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF1218,115 BF1218,115 NXP USA Inc. BF1218_Rev1.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 32dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF510,215 BF510,215 NXP USA Inc. BF510_511_512_513_CNV.pdf Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF512,215 BF512,215 NXP USA Inc. BF510-513.pdf Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF545A,215 BF545A,215 NXP USA Inc. BF545A%2CB%2CC.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF545B,215 BF545B,215 NXP USA Inc. BF545A%2CB%2CC.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF556A,215 BF556A,215 NXP USA Inc. BF556A%2CB%2CC_Rev4.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 7mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF861C,215 BF861C,215 NXP USA Inc. BF861A_BF861B_BF861C.pdf Description: RF MOSFET JFET SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
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BF904AR,215 BF904AR,215 NXP USA Inc. BF904A%28R%2CWR%29_Rev4.pdf Description: RF MOSFET 4V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
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BF904A,215 BF904A,215 NXP USA Inc. BF904A%28R%2CWR%29_Rev4.pdf Description: RF MOSFET 4V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
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BF904R,215 BF904R,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
товару немає в наявності
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BF904WR,115 BF904WR,115 NXP USA Inc. BF904WR_Rev_Sept2010.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904,215 BF904,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF908,215 BF908,215 NXP USA Inc. BF908-R_N.pdf Description: RF MOSFET 8V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
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BFG35,115 BFG35,115 NXP USA Inc. BFG35.pdf Description: RF TRANS NPN 18V 4GHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SC-73
Part Status: Obsolete
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BFG520,215 BFG520,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
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BFG520/XR,215 BFG520/XR,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143R
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BFG520/X,215 BFG520/X,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFG540W/X,115 BFG540W/X,115 NXP USA Inc. BFG540W_WX_WXR_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
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BFG540/XR,215 BFG540/XR,215 NXP USA Inc. BFG540_X_XR_Rev5.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
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BFG92A/X,215 BFG92A/X,215 NXP USA Inc. BFG92A_X_Rev6.pdf Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
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BFQ18A,115 BFQ18A,115 NXP USA Inc. BFQ18A_N.pdf Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
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BFQ540,115 BFQ540,115 NXP USA Inc. BFQ540_Rev5.pdf Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
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BFQ591,115 BFQ591,115 NXP USA Inc. BFQ591_Rev4.pdf Description: RF TRANS NPN 15V 7GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 2.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 7GHz
Supplier Device Package: SOT-89-3
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BFQ67W,115 BFQ67W,115 NXP USA Inc. BFQ67W_Rev_Oct2010.pdf Description: RF TRANS NPN 10V 8GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFR31,215 BFR31,215 NXP USA Inc. BFR30%2C31.pdf Description: JFET N-CH 10MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V
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BFR520T,115 BFR520T,115 NXP USA Inc. BFR520T_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
Part Status: Obsolete
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BFR93AW,115 BFR93AW,115 NXP USA Inc. BFR93AW_Rev_Oct2010.pdf Description: RF TRANS NPN 12V 5GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BGA2801,115 BGA2801,115 NXP USA Inc. BGA2801.pdf Description: IC RF AMP GPS 0HZ-2.2GHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 3.6V
Gain: 23dB
Current - Supply: 14.3mA
Noise Figure: 3.9dB
P1dB: 0dBm
Test Frequency: 2.15GHz
Supplier Device Package: 6-TSSOP
на замовлення 2691 шт:
термін постачання 21-31 дні (днів)
10+34.93 грн
11+29.66 грн
25+26.79 грн
100+21.98 грн
250+19.29 грн
500+17.05 грн
1000+13.24 грн
Мінімальне замовлення: 10
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BGA2866,115 BGA2866,115 NXP USA Inc. BGA2866.pdf Description: IC RF AMP GPS 0HZ-2.2GHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 24.3dB
Current - Supply: 17.4mA
Noise Figure: 3.9dB
P1dB: 3dBm
Test Frequency: 2.15GHz
Supplier Device Package: 6-TSSOP
на замовлення 10196 шт:
термін постачання 21-31 дні (днів)
14+23.02 грн
17+18.50 грн
25+17.43 грн
100+14.95 грн
250+14.10 грн
500+13.50 грн
1000+12.72 грн
Мінімальне замовлення: 14
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BLT81,115 BLT81,115 NXP USA Inc. BLT81.pdf Description: RF TRANS NPN 9.5V 900MHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 8dB
Power - Max: 2W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 9.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Frequency - Transition: 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
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PBR941B,215 PBR941B,215 NXP USA Inc. PBR941B.pdf Description: RF TRANS NPN 10V 9GHZ TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Supplier Device Package: SOT-23 (TO-236AB)
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PCF8564ACX9/B/1,02 NXP USA Inc. PCF8564A.pdf Description: IC RTC CLOCK/CALENDAR I2C DIE
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output, Watchdog Timer
Package / Case: Die
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: Die
Current - Timekeeping (Max): 0.6µA ~ 0.75µA @ 2V ~ 5V
Part Status: Obsolete
DigiKey Programmable: Not Verified
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PMBF4391,215 PMBF4391,215 NXP USA Inc. PMBF4391-4393.pdf Description: JFET N-CH 40V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
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PMBF4392,215 PMBF4392,215 NXP USA Inc. PMBF4391-4393.pdf Description: JFET N-CH 40V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
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PMBFJ175,215 PMBFJ175,215 NXP USA Inc. PMBFJ174_175_176_177_CNV.pdf Description: JFET P-CH 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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PMBFJ309,215 PMBFJ309,215 NXP USA Inc. PMBFJ308_309_310.pdf Description: JFET N-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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PMDPB65UP,115 PMDPB65UP,115 NXP USA Inc. PMDPB65UP.pdf Description: MOSFET 2P-CH 20V 3.5A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 520mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
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PMFPB6532UP,115 PMFPB6532UP,115 NXP USA Inc. PMFPB6532UP.pdf Description: MOSFET P-CH 20V 3.5A DFN2020-6
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PMFPB6545UP,115 PMFPB6545UP,115 NXP USA Inc. PMFPB6545UP.pdf Description: MOSFET P-CH 20V 3.5A SOT1118
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PRF947,115 PRF947,115 NXP USA Inc. PRF947.pdf Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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TL431BMSDT,215 TL431BMSDT,215 NXP USA Inc. TL431_Family.pdf Description: IC VREF SHUNT ADJ 0.5% TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
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TL431BSDT,215 TL431BSDT,215 NXP USA Inc. TL431_Family.pdf Description: IC VREF SHUNT ADJ 0.5% TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
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BGA7127,118 BGA7127,118 NXP USA Inc. BGA7127.pdf Description: IC AMP ISM 400MHZ-2.7GHZ 8HVSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 2.7GHz
RF Type: ISM, RFID, WLAN
Voltage - Supply: 5V
Gain: 10.5dB
Current - Supply: 180mA
Noise Figure: 4.7dB
P1dB: 27.5dBm
Test Frequency: 2.445GHz
Supplier Device Package: 8-HVSON (3x3)
Part Status: Obsolete
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PTN3392BS/F2,518 PTN3392BS/F2,518 NXP USA Inc. PTN3392.pdf Description: IC INTFACE SPECIALIZED 48HVQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, Notebook PCs
Supplier Device Package: 48-HVQFN (7x7)
Part Status: Last Time Buy
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SA616DK/03,118 SA616DK/03,118 NXP USA Inc. SA616.pdf Description: IC MIXR 150MHZ RSSI EQUIP 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 150MHz
RF Type: Cellular
Voltage - Supply: 2.7V ~ 7V
Gain: 17dB
Current - Supply: 3.5mA
Secondary Attributes: RSSI Equipped
Noise Figure: 6.8dB
Number of Mixers: 2
Supplier Device Package: 20-SSOP
Part Status: Obsolete
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BGA7127,118 BGA7127,118 NXP USA Inc. BGA7127.pdf Description: IC AMP ISM 400MHZ-2.7GHZ 8HVSON
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 2.7GHz
RF Type: ISM, RFID, WLAN
Voltage - Supply: 5V
Gain: 10.5dB
Current - Supply: 180mA
Noise Figure: 4.7dB
P1dB: 27.5dBm
Test Frequency: 2.445GHz
Supplier Device Package: 8-HVSON (3x3)
Part Status: Obsolete
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PTN3392BS/F2,518 PTN3392BS/F2,518 NXP USA Inc. PTN3392.pdf Description: IC INTFACE SPECIALIZED 48HVQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, Notebook PCs
Supplier Device Package: 48-HVQFN (7x7)
Part Status: Last Time Buy
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BUK764R3-40B,118 BUK764R3-40B,118 NXP USA Inc. BUK764R3-40B.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
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PX1011BI-EL1/G,518 PX1011BI-EL1/G,518 NXP USA Inc. PX1011B.pdf Description: IC INTFACE SPECIALIZED 81LFBGA
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TFF1003HN/N1,115 TFF1003HN/N1,115 NXP USA Inc. TFF1003HN.pdf Description: IC FREQUENCY GEN TX/TXRX 24HVQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 13.05GHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: Ku band VSAT applications
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/No
Supplier Device Package: 24-HVQFN (4x4)
PLL: No
Part Status: Obsolete
Number of Circuits: 1
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OM13008,598 OM13008,598 NXP USA Inc. LPC122X.pdf Description: LPCXPRESSO LPC122 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: LPC122
Platform: LPCXpresso™
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MRFE6VP5600HR5 MRFE6VP5600HR5 NXP USA Inc. MRFE6VP5600H.pdf Description: RF MOSFET LDMOS 50V NI1230
Packaging: Tape & Reel (TR)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 230MHz
Configuration: Dual
Power - Output: 600W
Gain: 25dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 100 mA
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MRFE6VP5600HR5 MRFE6VP5600HR5 NXP USA Inc. MRFE6VP5600H.pdf Description: RF MOSFET LDMOS 50V NI1230
Packaging: Cut Tape (CT)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 230MHz
Configuration: Dual
Power - Output: 600W
Gain: 25dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 100 mA
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+15719.86 грн
10+12923.15 грн
25+12370.41 грн
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MPC8313E-RDBC MPC8313E-RDBC NXP USA Inc. MPC8313E_Hrdw_Spec.pdf Description: MPC8313E EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MPU
Contents: Board(s)
Core Processor: e300
Utilized IC / Part: MPC8313E
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P1013PSE2EFA P1013PSE2EFA NXP USA Inc. QP1022FS.pdf Description: IC MPU Q OR IQ 1.067GHZ 689TBGA
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BF1202WR,115 BF1202(R,WR)_Rev_Sept2010.pdf
BF1202WR,115
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 10V 30MA SOT343R
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1202,215 BF1202%28R%2CWR%29_Rev_Sept2010.pdf
BF1202,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1204,115 BF1204_Rev_Sept2010.pdf
BF1204,115
Виробник: NXP USA Inc.
Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1215,115 BF1215_Rev1.pdf
BF1215,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF1216,115 BF1216_Rev1.pdf
BF1216,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF1218,115 BF1218_Rev1.pdf
BF1218,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 32dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
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BF510,215 BF510_511_512_513_CNV.pdf
BF510,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF512,215 BF510-513.pdf
BF512,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 10V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF545A,215 BF545A%2CB%2CC.pdf
BF545A,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF545B,215 BF545A%2CB%2CC.pdf
BF545B,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF556A,215 BF556A%2CB%2CC_Rev4.pdf
BF556A,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 7mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF861C,215 BF861A_BF861B_BF861C.pdf
BF861C,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
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BF904AR,215 BF904A%28R%2CWR%29_Rev4.pdf
BF904AR,215
Виробник: NXP USA Inc.
Description: RF MOSFET 4V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
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BF904A,215 BF904A%28R%2CWR%29_Rev4.pdf
BF904A,215
Виробник: NXP USA Inc.
Description: RF MOSFET 4V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 4 V
Current - Test: 10 mA
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BF904R,215 BF904%28R%29_Rev6.pdf
BF904R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904WR,115 BF904WR_Rev_Sept2010.pdf
BF904WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904,215 BF904%28R%29_Rev6.pdf
BF904,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF908,215 BF908-R_N.pdf
BF908,215
Виробник: NXP USA Inc.
Description: RF MOSFET 8V SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
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BFG35,115 BFG35.pdf
BFG35,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 18V 4GHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SC-73
Part Status: Obsolete
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BFG520,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
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BFG520/XR,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520/XR,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143R
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BFG520/X,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFG540W/X,115 BFG540W_WX_WXR_Rev_Oct2010.pdf
BFG540W/X,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ CMPAK-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
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BFG540/XR,215 BFG540_X_XR_Rev5.pdf
BFG540/XR,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143R
Packaging: Cut Tape (CT)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-143R
Part Status: Obsolete
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BFG92A/X,215 BFG92A_X_Rev6.pdf
BFG92A/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
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BFQ18A,115 BFQ18A_N.pdf
BFQ18A,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
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BFQ540,115 BFQ540_Rev5.pdf
BFQ540,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
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BFQ591,115 BFQ591_Rev4.pdf
BFQ591,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 7GHZ SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 2.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 7GHz
Supplier Device Package: SOT-89-3
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BFQ67W,115 BFQ67W_Rev_Oct2010.pdf
BFQ67W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFR31,215 BFR30%2C31.pdf
BFR31,215
Виробник: NXP USA Inc.
Description: JFET N-CH 10MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V
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BFR520T,115 BFR520T_Rev_Oct2010.pdf
BFR520T,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SC-75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
Part Status: Obsolete
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BFR93AW,115 BFR93AW_Rev_Oct2010.pdf
BFR93AW,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 12V 5GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BGA2801,115 BGA2801.pdf
BGA2801,115
Виробник: NXP USA Inc.
Description: IC RF AMP GPS 0HZ-2.2GHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 3.6V
Gain: 23dB
Current - Supply: 14.3mA
Noise Figure: 3.9dB
P1dB: 0dBm
Test Frequency: 2.15GHz
Supplier Device Package: 6-TSSOP
на замовлення 2691 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.93 грн
11+29.66 грн
25+26.79 грн
100+21.98 грн
250+19.29 грн
500+17.05 грн
1000+13.24 грн
Мінімальне замовлення: 10
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BGA2866,115 BGA2866.pdf
BGA2866,115
Виробник: NXP USA Inc.
Description: IC RF AMP GPS 0HZ-2.2GHZ 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 24.3dB
Current - Supply: 17.4mA
Noise Figure: 3.9dB
P1dB: 3dBm
Test Frequency: 2.15GHz
Supplier Device Package: 6-TSSOP
на замовлення 10196 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.02 грн
17+18.50 грн
25+17.43 грн
100+14.95 грн
250+14.10 грн
500+13.50 грн
1000+12.72 грн
Мінімальне замовлення: 14
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BLT81,115 BLT81.pdf
BLT81,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 9.5V 900MHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 8dB
Power - Max: 2W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 9.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Frequency - Transition: 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
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PBR941B,215 PBR941B.pdf
PBR941B,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 9GHZ TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 360mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Supplier Device Package: SOT-23 (TO-236AB)
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PCF8564ACX9/B/1,02 PCF8564A.pdf
Виробник: NXP USA Inc.
Description: IC RTC CLOCK/CALENDAR I2C DIE
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output, Watchdog Timer
Package / Case: Die
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: Die
Current - Timekeeping (Max): 0.6µA ~ 0.75µA @ 2V ~ 5V
Part Status: Obsolete
DigiKey Programmable: Not Verified
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PMBF4391,215 PMBF4391-4393.pdf
PMBF4391,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
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PMBF4392,215 PMBF4391-4393.pdf
PMBF4392,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
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PMBFJ175,215 PMBFJ174_175_176_177_CNV.pdf
PMBFJ175,215
Виробник: NXP USA Inc.
Description: JFET P-CH 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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PMBFJ309,215 PMBFJ308_309_310.pdf
PMBFJ309,215
Виробник: NXP USA Inc.
Description: JFET N-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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PMDPB65UP,115 PMDPB65UP.pdf
PMDPB65UP,115
Виробник: NXP USA Inc.
Description: MOSFET 2P-CH 20V 3.5A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 520mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
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PMFPB6532UP,115 PMFPB6532UP.pdf
PMFPB6532UP,115
Виробник: NXP USA Inc.
Description: MOSFET P-CH 20V 3.5A DFN2020-6
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PMFPB6545UP,115 PMFPB6545UP.pdf
PMFPB6545UP,115
Виробник: NXP USA Inc.
Description: MOSFET P-CH 20V 3.5A SOT1118
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PRF947,115 PRF947.pdf
PRF947,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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TL431BMSDT,215 TL431_Family.pdf
TL431BMSDT,215
Виробник: NXP USA Inc.
Description: IC VREF SHUNT ADJ 0.5% TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
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TL431BSDT,215 TL431_Family.pdf
TL431BSDT,215
Виробник: NXP USA Inc.
Description: IC VREF SHUNT ADJ 0.5% TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
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BGA7127,118 BGA7127.pdf
BGA7127,118
Виробник: NXP USA Inc.
Description: IC AMP ISM 400MHZ-2.7GHZ 8HVSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 2.7GHz
RF Type: ISM, RFID, WLAN
Voltage - Supply: 5V
Gain: 10.5dB
Current - Supply: 180mA
Noise Figure: 4.7dB
P1dB: 27.5dBm
Test Frequency: 2.445GHz
Supplier Device Package: 8-HVSON (3x3)
Part Status: Obsolete
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PTN3392BS/F2,518 PTN3392.pdf
PTN3392BS/F2,518
Виробник: NXP USA Inc.
Description: IC INTFACE SPECIALIZED 48HVQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, Notebook PCs
Supplier Device Package: 48-HVQFN (7x7)
Part Status: Last Time Buy
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SA616DK/03,118 SA616.pdf
SA616DK/03,118
Виробник: NXP USA Inc.
Description: IC MIXR 150MHZ RSSI EQUIP 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 150MHz
RF Type: Cellular
Voltage - Supply: 2.7V ~ 7V
Gain: 17dB
Current - Supply: 3.5mA
Secondary Attributes: RSSI Equipped
Noise Figure: 6.8dB
Number of Mixers: 2
Supplier Device Package: 20-SSOP
Part Status: Obsolete
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BGA7127,118 BGA7127.pdf
BGA7127,118
Виробник: NXP USA Inc.
Description: IC AMP ISM 400MHZ-2.7GHZ 8HVSON
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 2.7GHz
RF Type: ISM, RFID, WLAN
Voltage - Supply: 5V
Gain: 10.5dB
Current - Supply: 180mA
Noise Figure: 4.7dB
P1dB: 27.5dBm
Test Frequency: 2.445GHz
Supplier Device Package: 8-HVSON (3x3)
Part Status: Obsolete
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PTN3392BS/F2,518 PTN3392.pdf
PTN3392BS/F2,518
Виробник: NXP USA Inc.
Description: IC INTFACE SPECIALIZED 48HVQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, Notebook PCs
Supplier Device Package: 48-HVQFN (7x7)
Part Status: Last Time Buy
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BUK764R3-40B,118 BUK764R3-40B.pdf
BUK764R3-40B,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
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PX1011BI-EL1/G,518 PX1011B.pdf
PX1011BI-EL1/G,518
Виробник: NXP USA Inc.
Description: IC INTFACE SPECIALIZED 81LFBGA
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TFF1003HN/N1,115 TFF1003HN.pdf
TFF1003HN/N1,115
Виробник: NXP USA Inc.
Description: IC FREQUENCY GEN TX/TXRX 24HVQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 13.05GHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: Ku band VSAT applications
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/No
Supplier Device Package: 24-HVQFN (4x4)
PLL: No
Part Status: Obsolete
Number of Circuits: 1
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OM13008,598 LPC122X.pdf
OM13008,598
Виробник: NXP USA Inc.
Description: LPCXPRESSO LPC122 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: LPC122
Platform: LPCXpresso™
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MRFE6VP5600HR5 MRFE6VP5600H.pdf
MRFE6VP5600HR5
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Packaging: Tape & Reel (TR)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 230MHz
Configuration: Dual
Power - Output: 600W
Gain: 25dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 100 mA
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MRFE6VP5600HR5 MRFE6VP5600H.pdf
MRFE6VP5600HR5
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Packaging: Cut Tape (CT)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 230MHz
Configuration: Dual
Power - Output: 600W
Gain: 25dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Active
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 100 mA
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15719.86 грн
10+12923.15 грн
25+12370.41 грн
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MPC8313E-RDBC MPC8313E_Hrdw_Spec.pdf
MPC8313E-RDBC
Виробник: NXP USA Inc.
Description: MPC8313E EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MPU
Contents: Board(s)
Core Processor: e300
Utilized IC / Part: MPC8313E
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P1013PSE2EFA QP1022FS.pdf
P1013PSE2EFA
Виробник: NXP USA Inc.
Description: IC MPU Q OR IQ 1.067GHZ 689TBGA
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