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SC16C2552BIA44,529 SC16C2552BIA44,529 NXP USA Inc. SC16C2552B.pdf Description: IC UART DUAL W/FIFO 44-PLCC
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SC16C654BIB64,151 SC16C654BIB64,151 NXP USA Inc. SC16C654B_654DB.pdf Description: IC UART QUAD W/FIFO 64-LQFP
Packaging: Tray
Package / Case: 64-LQFP
Number of Channels: 4, QUART
Mounting Type: Surface Mount
Voltage - Supply: 2.5V, 3.3V, 5V
FIFO's: 64 Byte
Data Rate (Max): 5Mbps
Supplier Device Package: 64-LQFP (10x10)
With Auto Flow Control: Yes
With IrDA Encoder/Decoder: Yes
With False Start Bit Detection: Yes
With Modem Control: Yes
Part Status: Active
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
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SC16IS740IPW,112 SC16IS740IPW,112 NXP USA Inc. SC16IS740_750_760.pdf Description: IC UART SINGLE W/FIFO 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 6mA
Protocol: RS232, RS485
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
на замовлення 943 шт:
термін постачання 21-31 дні (днів)
2+200.74 грн
10+153.05 грн
96+126.02 грн
192+117.94 грн
288+117.61 грн
576+116.31 грн
Мінімальне замовлення: 2
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GTL2010BS,118 GTL2010BS,118 NXP USA Inc. GTL2010.pdf Description: IC TRANSLATOR BIDIR 24HVQFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 24-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-HVQFN (4x4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 10
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1 V ~ 5.5 V
Number of Circuits: 1
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PCA8550PW,118 PCA8550PW,118 NXP USA Inc. PCA8550.pdf Description: IC MULTIPLEXER 1 X 4:4 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:4
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 2mA, 2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
на замовлення 2575 шт:
термін постачання 21-31 дні (днів)
3+116.48 грн
10+82.02 грн
25+74.55 грн
100+62.22 грн
250+58.52 грн
500+56.30 грн
1000+53.57 грн
Мінімальне замовлення: 3
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PCA8581CT/6,118 PCA8581CT/6,118 NXP USA Inc. PCA8581_PCA8581C.pdf Description: IC EEPROM 1KBIT I2C 100KHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6.0V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SO
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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PCA9506BS,118 PCA9506BS,118 NXP USA Inc. PCA9505_9506.pdf Description: IC XPNDR 400KHZ I2C 56HVQFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 56-VFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 40
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 56-HVQFN (8x8)
Current - Output Source/Sink: 10mA, 25mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1882 шт:
термін постачання 21-31 дні (днів)
1+394.87 грн
10+290.59 грн
25+268.24 грн
100+228.69 грн
250+217.69 грн
500+211.07 грн
1000+202.24 грн
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BF1101WR,115 BF1101WR,115 NXP USA Inc. BF1101%28R%2CWR%29.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.7dB
Supplier Device Package: CMPAK-4
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1102R,115 BF1102R,115 NXP USA Inc. BF1102%28R%29.pdf Description: RF MOSFET 5V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1105WR,115 BF1105WR,115 NXP USA Inc. BF1105_R_WR.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.7dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
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BF1109WR,115 BF1109WR,115 NXP USA Inc. BF1109%28R%2CWR%29.pdf Description: RF MOSFET 9V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: CMPAK-4
Voltage - Rated: 11 V
Voltage - Test: 9 V
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BF199,112 BF199,112 NXP USA Inc. DS_568_BF199.pdf Description: TRANS NPN 25V 0.025A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
Frequency - Transition: 550MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
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BF240,112 BF240,112 NXP USA Inc. BF240.pdf Description: RF TRANS NPN 40V 150MHZ TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 40V
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
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BF370,112 BF370,112 NXP USA Inc. BF370.pdf Description: TRANS NPN 15V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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BF420,112 BF420,112 NXP USA Inc. BF420%2CBF422.pdf Description: TRANS NPN 300V 0.05A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 830 mW
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BF420,116 BF420,116 NXP USA Inc. BF420%2CBF422.pdf Description: TRANS NPN 300V 0.05A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 830 mW
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BF421,112 BF421,112 NXP USA Inc. BF421,BF423.pdf Description: TRANS PNP 300V 0.05A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 830 mW
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BF422,116 BF422,116 NXP USA Inc. BF420%2CBF422.pdf Description: TRANS NPN 250V 0.05A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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BF423,112 BF423,112 NXP USA Inc. BF421%2CBF423.pdf Description: TRANS PNP 250V 0.05A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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BF423,116 BF423,116 NXP USA Inc. BF421%2CBF423.pdf Description: TRANS PNP 250V 0.05A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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BF510,215 BF510,215 NXP USA Inc. BF510_511_512_513_CNV.pdf Description: RF MOSFET JFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF512,215 BF512,215 NXP USA Inc. BF510-513.pdf Description: RF MOSFET JFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF513,215 BF513,215 NXP USA Inc. BF510_511_512_513_CNV.pdf Description: RF MOSFET JFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF545A,215 BF545A,215 NXP USA Inc. BF545A%2CB%2CC.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF556A,215 BF556A,215 NXP USA Inc. BF556A%2CB%2CC_Rev4.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 7mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF556B,215 BF556B,215 NXP USA Inc. BF556A%2CB%2CC_Rev4.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 13mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF556C,215 BF556C,215 NXP USA Inc. BF556A%2CB%2CC_Rev4.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 18mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF861A,215 BF861A,215 NXP USA Inc. BF861A_BF861B_BF861C.pdf Description: RF MOSFET JFET 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
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BF861C,215 BF861C,215 NXP USA Inc. BF861A_BF861B_BF861C.pdf Description: RF MOSFET JFET SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
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BF904,215 BF904,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904AWR,115 BF904AWR,115 NXP USA Inc. BF904A%2CAR%2CAWR.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904R,215 BF904R,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904WR,115 BF904WR,115 NXP USA Inc. BF904WR_Rev_Sept2010.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF908,215 BF908,215 NXP USA Inc. BF908-R_N.pdf Description: RF MOSFET 8V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
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BF909,215 BF909,215 NXP USA Inc. BF909%28R%29_Rev2.pdf Description: RF MOSFET 5V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF909AWR,115 BF909AWR,115 NXP USA Inc. BF909AWR.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
товару немає в наявності
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BF909WR,115 BF909WR,115 NXP USA Inc. BF909WR_Rev_Sept2010.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
товару немає в наявності
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BF996S,215 BF996S,215 NXP USA Inc. BF996S.pdf Description: RF MOSFET 15V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 15 V
Current - Test: 10 mA
товару немає в наявності
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BF998R,215 BF998R,215 NXP USA Inc. BF998%28R%29_Rev_Oct2010.pdf Description: RF MOSFET 8V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
товару немає в наявності
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BF998WR,115 BF998WR,115 NXP USA Inc. BF998WR_Rev_Oct2010.pdf Description: RF MOSFET 8V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
товару немає в наявності
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BFG10W/X,115 BFG10W/X,115 NXP USA Inc. BFG10W_X_Rev_Oct2010.pdf Description: RF TRANS NPN 10V 1.9GHZ 4SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 1.9GHz
Supplier Device Package: 4-SO
товару немає в наявності
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BFG35,115 BFG35,115 NXP USA Inc. BFG35.pdf Description: RF TRANS NPN 18V 4GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SC-73
Part Status: Obsolete
товару немає в наявності
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BFG424W,115 BFG424W,115 NXP USA Inc. BFG424W_Rev2.pdf Description: RF TRANS NPN 4.5V 25GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 135mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFG505,215 BFG505,215 NXP USA Inc. BFG505_X_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
товару немає в наявності
В кошику  од. на суму  грн.
BFG520/X,215 BFG520/X,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFG520W,115 BFG520W,115 NXP USA Inc. BFG520W_X_Rev_4.pdf Description: RF TRANS NPN 15V 9GHZ 4-SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: 4-SO
товару немає в наявності
В кошику  од. на суму  грн.
BFG540W,115 BFG540W,115 NXP USA Inc. BFG540W_WX_WXR_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ 4-SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Supplier Device Package: 4-SO
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFG590,215 BFG590,215 NXP USA Inc. BFG590_X_Rev4.pdf Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 5GHz
Supplier Device Package: SOT-143B
товару немає в наявності
В кошику  од. на суму  грн.
BFG590/X,215 BFG590/X,215 NXP USA Inc. BFG590_X_Rev4.pdf Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 5GHz
Supplier Device Package: SOT-143B
товару немає в наявності
В кошику  од. на суму  грн.
BFG94,115 BFG94,115 NXP USA Inc. BFG94_Rev_Oct2010.pdf Description: RF TRANS NPN 12V 6GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 5V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
Supplier Device Package: SC-73
товару немає в наявності
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BFQ149,115 BFQ149,115 NXP USA Inc. BFQ149.pdf Description: RF TRANS PNP 15V 5GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 70mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFQ18A,115 BFQ18A,115 NXP USA Inc. BFQ18A_N.pdf Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
товару немає в наявності
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BFQ67W,115 BFQ67W,115 NXP USA Inc. BFQ67W_Rev_Oct2010.pdf Description: RF TRANS NPN 10V 8GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFR93AW,115 BFR93AW,115 NXP USA Inc. BFR93AW_Rev_Oct2010.pdf Description: RF TRANS NPN 12V 5GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
товару немає в наявності
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BFS25A,115 BFS25A,115 NXP USA Inc. BFS25A_CNV.pdf Description: RF TRANS NPN 5V 5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 32mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFT25,215 BFT25,215 NXP USA Inc. BFT25A.pdf Description: RF TRANS NPN 5V 2.3GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 30mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): 5.5dB @ 500MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
товару немає в наявності
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BFT93W,115 BFT93W,115 NXP USA Inc. BFT93W.pdf Description: RF TRANS PNP 12V 4GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
товару немає в наявності
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BGD502,112 BGD502,112 NXP USA Inc. BGD502_Rev_Nov2010.pdf Description: IC AMP CATV SOT115J
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BGD702,112 BGD702,112 NXP USA Inc. BGD702.pdf Description: IC AMP CATV SOT115J
товару немає в наявності
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BGD802,112 BGD802,112 NXP USA Inc. BGD802.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 395 mA
товару немає в наявності
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SC16C2552BIA44,529 SC16C2552B.pdf
SC16C2552BIA44,529
Виробник: NXP USA Inc.
Description: IC UART DUAL W/FIFO 44-PLCC
товару немає в наявності
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SC16C654BIB64,151 SC16C654B_654DB.pdf
SC16C654BIB64,151
Виробник: NXP USA Inc.
Description: IC UART QUAD W/FIFO 64-LQFP
Packaging: Tray
Package / Case: 64-LQFP
Number of Channels: 4, QUART
Mounting Type: Surface Mount
Voltage - Supply: 2.5V, 3.3V, 5V
FIFO's: 64 Byte
Data Rate (Max): 5Mbps
Supplier Device Package: 64-LQFP (10x10)
With Auto Flow Control: Yes
With IrDA Encoder/Decoder: Yes
With False Start Bit Detection: Yes
With Modem Control: Yes
Part Status: Active
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
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SC16IS740IPW,112 SC16IS740_750_760.pdf
SC16IS740IPW,112
Виробник: NXP USA Inc.
Description: IC UART SINGLE W/FIFO 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 2.5V, 3.3V
Current - Supply: 6mA
Protocol: RS232, RS485
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
на замовлення 943 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.74 грн
10+153.05 грн
96+126.02 грн
192+117.94 грн
288+117.61 грн
576+116.31 грн
Мінімальне замовлення: 2
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GTL2010BS,118 GTL2010.pdf
GTL2010BS,118
Виробник: NXP USA Inc.
Description: IC TRANSLATOR BIDIR 24HVQFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 24-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-HVQFN (4x4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 10
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1 V ~ 5.5 V
Number of Circuits: 1
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PCA8550PW,118 PCA8550.pdf
PCA8550PW,118
Виробник: NXP USA Inc.
Description: IC MULTIPLEXER 1 X 4:4 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:4
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 2mA, 2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
на замовлення 2575 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.48 грн
10+82.02 грн
25+74.55 грн
100+62.22 грн
250+58.52 грн
500+56.30 грн
1000+53.57 грн
Мінімальне замовлення: 3
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PCA8581CT/6,118 PCA8581_PCA8581C.pdf
PCA8581CT/6,118
Виробник: NXP USA Inc.
Description: IC EEPROM 1KBIT I2C 100KHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6.0V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SO
Write Cycle Time - Word, Page: 10ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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PCA9506BS,118 PCA9505_9506.pdf
PCA9506BS,118
Виробник: NXP USA Inc.
Description: IC XPNDR 400KHZ I2C 56HVQFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 56-VFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 40
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 56-HVQFN (8x8)
Current - Output Source/Sink: 10mA, 25mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1882 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+394.87 грн
10+290.59 грн
25+268.24 грн
100+228.69 грн
250+217.69 грн
500+211.07 грн
1000+202.24 грн
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BF1101WR,115 BF1101%28R%2CWR%29.pdf
BF1101WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.7dB
Supplier Device Package: CMPAK-4
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 12 mA
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BF1102R,115 BF1102%28R%29.pdf
BF1102R,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF1105WR,115 BF1105_R_WR.pdf
BF1105WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.7dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
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BF1109WR,115 BF1109%28R%2CWR%29.pdf
BF1109WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 9V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.5dB
Supplier Device Package: CMPAK-4
Voltage - Rated: 11 V
Voltage - Test: 9 V
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BF199,112 DS_568_BF199.pdf
BF199,112
Виробник: NXP USA Inc.
Description: TRANS NPN 25V 0.025A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
Frequency - Transition: 550MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
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BF240,112 BF240.pdf
BF240,112
Виробник: NXP USA Inc.
Description: RF TRANS NPN 40V 150MHZ TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 40V
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
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BF370,112 BF370.pdf
BF370,112
Виробник: NXP USA Inc.
Description: TRANS NPN 15V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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BF420,112 BF420%2CBF422.pdf
BF420,112
Виробник: NXP USA Inc.
Description: TRANS NPN 300V 0.05A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 830 mW
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BF420,116 BF420%2CBF422.pdf
BF420,116
Виробник: NXP USA Inc.
Description: TRANS NPN 300V 0.05A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 830 mW
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BF421,112 BF421,BF423.pdf
BF421,112
Виробник: NXP USA Inc.
Description: TRANS PNP 300V 0.05A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 830 mW
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BF422,116 BF420%2CBF422.pdf
BF422,116
Виробник: NXP USA Inc.
Description: TRANS NPN 250V 0.05A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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BF423,112 BF421%2CBF423.pdf
BF423,112
Виробник: NXP USA Inc.
Description: TRANS PNP 250V 0.05A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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BF423,116 BF421%2CBF423.pdf
BF423,116
Виробник: NXP USA Inc.
Description: TRANS PNP 250V 0.05A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 830 mW
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BF510,215 BF510_511_512_513_CNV.pdf
BF510,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF512,215 BF510-513.pdf
BF512,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF513,215 BF510_511_512_513_CNV.pdf
BF513,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
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BF545A,215 BF545A%2CB%2CC.pdf
BF545A,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF556A,215 BF556A%2CB%2CC_Rev4.pdf
BF556A,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 7mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF556B,215 BF556A%2CB%2CC_Rev4.pdf
BF556B,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 13mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF556C,215 BF556A%2CB%2CC_Rev4.pdf
BF556C,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 18mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
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BF861A,215 BF861A_BF861B_BF861C.pdf
BF861A,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 6.5mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
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BF861C,215 BF861A_BF861B_BF861C.pdf
BF861C,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
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BF904,215 BF904%28R%29_Rev6.pdf
BF904,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904AWR,115 BF904A%2CAR%2CAWR.pdf
BF904AWR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904R,215 BF904%28R%29_Rev6.pdf
BF904R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF904WR,115 BF904WR_Rev_Sept2010.pdf
BF904WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF908,215 BF908-R_N.pdf
BF908,215
Виробник: NXP USA Inc.
Description: RF MOSFET 8V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
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BF909,215 BF909%28R%29_Rev2.pdf
BF909,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF909AWR,115 BF909AWR.pdf
BF909AWR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF909WR,115 BF909WR_Rev_Sept2010.pdf
BF909WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 2dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 7 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF996S,215 BF996S.pdf
BF996S,215
Виробник: NXP USA Inc.
Description: RF MOSFET 15V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 15 V
Current - Test: 10 mA
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BF998R,215 BF998%28R%29_Rev_Oct2010.pdf
BF998R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 8V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
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BF998WR,115 BF998WR_Rev_Oct2010.pdf
BF998WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 8V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
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BFG10W/X,115 BFG10W_X_Rev_Oct2010.pdf
BFG10W/X,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 1.9GHZ 4SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 1.9GHz
Supplier Device Package: 4-SO
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BFG35,115 BFG35.pdf
BFG35,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 18V 4GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SC-73
Part Status: Obsolete
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BFG424W,115 BFG424W_Rev2.pdf
BFG424W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 4.5V 25GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 135mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
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BFG505,215 BFG505_X_Rev4.pdf
BFG505,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
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BFG520/X,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
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BFG520W,115 BFG520W_X_Rev_4.pdf
BFG520W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ 4-SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: 4-SO
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BFG540W,115 BFG540W_WX_WXR_Rev_Oct2010.pdf
BFG540W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ 4-SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Supplier Device Package: 4-SO
Part Status: Obsolete
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BFG590,215 BFG590_X_Rev4.pdf
BFG590,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 5GHz
Supplier Device Package: SOT-143B
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BFG590/X,215 BFG590_X_Rev4.pdf
BFG590/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5GHZ SOT-143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 5GHz
Supplier Device Package: SOT-143B
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BFG94,115 BFG94_Rev_Oct2010.pdf
BFG94,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 12V 6GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 5V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
Supplier Device Package: SC-73
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BFQ149,115 BFQ149.pdf
BFQ149,115
Виробник: NXP USA Inc.
Description: RF TRANS PNP 15V 5GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 70mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
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BFQ18A,115 BFQ18A_N.pdf
BFQ18A,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
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BFQ67W,115 BFQ67W_Rev_Oct2010.pdf
BFQ67W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFR93AW,115 BFR93AW_Rev_Oct2010.pdf
BFR93AW,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 12V 5GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFS25A,115 BFS25A_CNV.pdf
BFS25A,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 5V 5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 32mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFT25,215 BFT25A.pdf
BFT25,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 5V 2.3GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 30mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): 5.5dB @ 500MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
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BFT93W,115 BFT93W.pdf
BFT93W,115
Виробник: NXP USA Inc.
Description: RF TRANS PNP 12V 4GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BGD502,112 BGD502_Rev_Nov2010.pdf
BGD502,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
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BGD702,112 BGD702.pdf
BGD702,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
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BGD802,112 BGD802.pdf
BGD802,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 395 mA
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