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BF861A,215 BF861A,215 NXP USA Inc. BF861A_BF861B_BF861C.pdf Description: RF MOSFET JFET 25V SOT23
Voltage - Rated: 25 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Technology: JFET
Configuration: N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 6.5mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BF861C,215 BF861C,215 NXP USA Inc. BF861A_BF861B_BF861C.pdf Description: RF MOSFET JFET SOT23
Voltage - Rated: 25 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Technology: JFET
Configuration: N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BF904,215 BF904,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143B
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: SOT-143B
Noise Figure: 1dB
Technology: MOSFET
Configuration: N-Channel Dual Gate
Frequency: 200MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BF904AWR,115 BF904AWR,115 NXP USA Inc. BF904A%2CAR%2CAWR.pdf Description: RF MOSFET 5V CMPAK-4
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: CMPAK-4
Noise Figure: 1dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 200MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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BF904R,215 BF904R,215 NXP USA Inc. BF904%28R%29_Rev6.pdf Description: RF MOSFET 5V SOT143R
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: SOT-143R
Noise Figure: 1dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 200MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
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BF904WR,115 BF904WR,115 NXP USA Inc. BF904WR_Rev_Sept2010.pdf Description: RF MOSFET 5V CMPAK-4
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: CMPAK-4
Noise Figure: 1dB
Technology: MOSFET
Configuration: N-Channel Dual Gate
Frequency: 200MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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BF908,215 BF908,215 NXP USA Inc. BF908-R_N.pdf Description: RF MOSFET 8V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
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BF909,215 BF909,215 NXP USA Inc. BF909%28R%29_Rev2.pdf Description: RF MOSFET 5V SOT143B
Current - Test: 15 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: SOT-143B
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 40mA
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BF909AWR,115 BF909AWR,115 NXP USA Inc. BF909AWR.pdf Description: RF MOSFET 5V CMPAK-4
Current - Test: 15 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: CMPAK-4
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current Rating (Amps): 40mA
Package / Case: SC-82A, SOT-343
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BF909WR,115 BF909WR,115 NXP USA Inc. BF909WR_Rev_Sept2010.pdf Description: RF MOSFET 5V CMPAK-4
Current - Test: 15 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: CMPAK-4
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 40mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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BF996S,215 BF996S,215 NXP USA Inc. BF996S.pdf Description: RF MOSFET 15V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 15 V
Current - Test: 10 mA
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BF998R,215 BF998R,215 NXP USA Inc. BF998%28R%29_Rev_Oct2010.pdf Description: RF MOSFET 8V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
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BF998WR,115 BF998WR,115 NXP USA Inc. BF998WR_Rev_Oct2010.pdf Description: RF MOSFET 8V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
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BFG10W/X,115 BFG10W/X,115 NXP USA Inc. BFG10W_X_Rev_Oct2010.pdf Description: RF TRANS NPN 10V 1.9GHZ 4SO
Supplier Device Package: 4-SO
Frequency - Transition: 1.9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 250mA
Power - Max: 400mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Packaging: Tape & Reel (TR)
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BFG35,115 BFG35,115 NXP USA Inc. BFG35.pdf Description: RF TRANS NPN 18V 4GHZ SC-73
Part Status: Obsolete
Supplier Device Package: SC-73
Frequency - Transition: 4GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Voltage - Collector Emitter Breakdown (Max): 18V
Current - Collector (Ic) (Max): 150mA
Power - Max: 1W
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BFG424W,115 BFG424W,115 NXP USA Inc. BFG424W_Rev2.pdf Description: RF TRANS NPN 4.5V 25GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 135mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
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BFG505,215 BFG505,215 NXP USA Inc. BFG505_X_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 18mA
Power - Max: 150mW
Operating Temperature: 175°C (TJ)
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 15V
Supplier Device Package: SOT-143B
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BFG520/X,215 BFG520/X,215 NXP USA Inc. BFG520%28X%2CXR%29_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ SOT-143B
Part Status: Obsolete
Supplier Device Package: SOT-143B
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 70mA
Power - Max: 300mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BFG520W,115 BFG520W,115 NXP USA Inc. BFG520W_X_Rev_4.pdf Description: RF TRANS NPN 15V 9GHZ 4-SO
Supplier Device Package: 4-SO
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 70mA
Power - Max: 500mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Packaging: Tape & Reel (TR)
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BFG540W,115 BFG540W,115 NXP USA Inc. BFG540W_WX_WXR_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ 4-SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Supplier Device Package: 4-SO
Part Status: Obsolete
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BFG590,215 BFG590,215 NXP USA Inc. BFG590_X_Rev4.pdf Description: RF TRANS NPN 15V 5GHZ SOT-143B
Supplier Device Package: SOT-143B
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Power - Max: 400mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BFG590/X,215 BFG590/X,215 NXP USA Inc. BFG590_X_Rev4.pdf Description: RF TRANS NPN 15V 5GHZ SOT-143B
Supplier Device Package: SOT-143B
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Power - Max: 400mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BFG94,115 BFG94,115 NXP USA Inc. BFG94_Rev_Oct2010.pdf Description: RF TRANS NPN 12V 6GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 5V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
Supplier Device Package: SC-73
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BFQ149,115 BFQ149,115 NXP USA Inc. BFQ149.pdf Description: RF TRANS PNP 15V 5GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 70mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
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BFQ18A,115 BFQ18A,115 NXP USA Inc. BFQ18A_N.pdf Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
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BFQ67W,115 BFQ67W,115 NXP USA Inc. BFQ67W_Rev_Oct2010.pdf Description: RF TRANS NPN 10V 8GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFR93AW,115 BFR93AW,115 NXP USA Inc. BFR93AW_Rev_Oct2010.pdf Description: RF TRANS NPN 12V 5GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFS25A,115 BFS25A,115 NXP USA Inc. BFS25A_CNV.pdf Description: RF TRANS NPN 5V 5GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 32mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFT25,215 BFT25,215 NXP USA Inc. BFT25A.pdf Description: RF TRANS NPN 5V 2.3GHZ SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 30mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): 5.5dB @ 500MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
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BFT93W,115 BFT93W,115 NXP USA Inc. BFT93W.pdf Description: RF TRANS PNP 12V 4GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BGD502,112 BGD502,112 NXP USA Inc. BGD502_Rev_Nov2010.pdf Description: IC AMP CATV SOT115J
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BGD702,112 BGD702,112 NXP USA Inc. BGD702.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 425 mA
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BGD802,112 BGD802,112 NXP USA Inc. BGD802.pdf Description: IC AMP CATV SOT115J
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Package / Case: SOT-115J
Packaging: Bulk
Current - Supply: 395 mA
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BGD804,112 BGD804,112 NXP USA Inc. BGD804.pdf Description: IC AMP CATV SOT115J
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BGD812,112 BGD812,112 NXP USA Inc. BGD812_Rev_Jul2010.pdf Description: IC AMP CATV SOT115J
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BGD814,112 BGD814,112 NXP USA Inc. BGD814_Rev_Jul2010.pdf Description: IC AMP CATV SOT115J
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BGD816L,112 BGD816L,112 NXP USA Inc. BGD816L.pdf Description: IC AMP CATV SOT115J
Current - Supply: 360 mA
Number of Circuits: 1
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Package / Case: SOT-115J
Packaging: Bulk
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BGD885,112 BGD885,112 NXP USA Inc. BGD885.pdf Description: IC AMP GAIN PWR 860MHZ SFM9
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BGS67A,118 BGS67A,118 NXP USA Inc. BGS67A.pdf Description: IC AMP CATV DMAN8
Current - Supply: 95 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: DMAN8
Applications: CATV
Mounting Type: Surface Mount
Package / Case: SOT-567A
Packaging: Tape & Reel (TR)
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BGY585A,112 BGY585A,112 NXP USA Inc. BGY585A.pdf Description: IC AMP CATV SOT115J
Current - Supply: 220 mA
Number of Circuits: 1
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BGY588N,112 BGY588N,112 NXP USA Inc. BGY588N.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 325 mA
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BGY685A,112 BGY685A,112 NXP USA Inc. BGY685A.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 220 mA
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BGY687,112 BGY687,112 NXP USA Inc. BGY687.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 240 mA
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BGY785A,112 BGY785A,112 NXP USA Inc. BGY785A.pdf Description: IC AMP CATV SOT115J
Current - Supply: 225 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BGY887B,112 BGY887B,112 NXP USA Inc. BGY887B.pdf Description: IC AMP CATV SOT115J
Current - Supply: 340 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BGY888,112 BGY888,112 NXP USA Inc. BGY888.pdf Description: IC AMP CATV SOT115J
Current - Supply: 325 mA
Number of Circuits: 1
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BLT70,115 BLT70,115 NXP USA Inc. BLT70.pdf Description: RF TRANS NPN 8V 900MHZ SOT223
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BLT80,115 BLT80,115 NXP USA Inc. BLT80.pdf Description: RF TRANS NPN 10V 900MHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 150mA, 5V
Frequency - Transition: 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
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BLT81,115 BLT81,115 NXP USA Inc. BLT81.pdf Description: RF TRANS NPN 9.5V 900MHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 8dB
Power - Max: 2W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 9.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Frequency - Transition: 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
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BS108,126 BS108,126 NXP USA Inc. BS108.pdf Description: MOSFET N-CH 200V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 2.8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
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BS108/01,126 BS108/01,126 NXP USA Inc. BS108.pdf Description: MOSFET N-CH 200V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 2.8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
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BSN254,126 BSN254,126 NXP USA Inc. BSN254%28A%29.pdf Description: MOSFET N-CH 250V 310MA TO92-3
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
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BSN254A,126 BSN254A,126 NXP USA Inc. BSN254%28A%29.pdf Description: MOSFET N-CH 250V 310MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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BSN304,126 BSN304,126 NXP USA Inc. BSN304.pdf Description: MOSFET N-CH 300V 300MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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BSP254A,126 BSP254A,126 NXP USA Inc. BSP254%28A%29.pdf Description: MOSFET P-CH 250V 200MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
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BSP304A,126 BSP304A,126 NXP USA Inc. BSP304(A).pdf Description: MOSFET P-CH 300V 170MA TO92-3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.55V @ 1mA
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BSR56,215 BSR56,215 NXP USA Inc. BSR56%2C57%2C58.pdf Description: JFET N-CH 40V 20MA SOT23
Supplier Device Package: SOT-23 (TO-236AB)
Current Drain (Id) - Max: 20 mA
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Resistance - RDS(On): 25 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
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BSR57,215 BSR57,215 NXP USA Inc. BSR56,57,58.pdf Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
Resistance - RDS(On): 40 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BSR58,215 BSR58,215 NXP USA Inc. BSR56%2C57%2C58.pdf Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 0.5 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BST15,115 BST15,115 NXP USA Inc. BST15,16.pdf Description: TRANS PNP 200V 0.2A SOT89
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BF861A,215 BF861A_BF861B_BF861C.pdf
BF861A,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 25V SOT23
Voltage - Rated: 25 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Technology: JFET
Configuration: N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 6.5mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BF861C,215 BF861A_BF861B_BF861C.pdf
BF861C,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET SOT23
Voltage - Rated: 25 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Technology: JFET
Configuration: N-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BF904,215 BF904%28R%29_Rev6.pdf
BF904,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: SOT-143B
Noise Figure: 1dB
Technology: MOSFET
Configuration: N-Channel Dual Gate
Frequency: 200MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BF904AWR,115 BF904A%2CAR%2CAWR.pdf
BF904AWR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: CMPAK-4
Noise Figure: 1dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 200MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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BF904R,215 BF904%28R%29_Rev6.pdf
BF904R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: SOT-143R
Noise Figure: 1dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 200MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
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BF904WR,115 BF904WR_Rev_Sept2010.pdf
BF904WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: CMPAK-4
Noise Figure: 1dB
Technology: MOSFET
Configuration: N-Channel Dual Gate
Frequency: 200MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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BF908,215 BF908-R_N.pdf
BF908,215
Виробник: NXP USA Inc.
Description: RF MOSFET 8V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
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BF909,215 BF909%28R%29_Rev2.pdf
BF909,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Current - Test: 15 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: SOT-143B
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 40mA
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BF909AWR,115 BF909AWR.pdf
BF909AWR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Current - Test: 15 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: CMPAK-4
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current Rating (Amps): 40mA
Package / Case: SC-82A, SOT-343
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BF909WR,115 BF909WR_Rev_Sept2010.pdf
BF909WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Current - Test: 15 mA
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
Supplier Device Package: CMPAK-4
Noise Figure: 2dB
Technology: MOSFET (Metal Oxide)
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 40mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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BF996S,215 BF996S.pdf
BF996S,215
Виробник: NXP USA Inc.
Description: RF MOSFET 15V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 15 V
Current - Test: 10 mA
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BF998R,215 BF998%28R%29_Rev_Oct2010.pdf
BF998R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 8V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
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BF998WR,115 BF998WR_Rev_Oct2010.pdf
BF998WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 8V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
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BFG10W/X,115 BFG10W_X_Rev_Oct2010.pdf
BFG10W/X,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 1.9GHZ 4SO
Supplier Device Package: 4-SO
Frequency - Transition: 1.9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 250mA
Power - Max: 400mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Packaging: Tape & Reel (TR)
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BFG35,115 BFG35.pdf
BFG35,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 18V 4GHZ SC-73
Part Status: Obsolete
Supplier Device Package: SC-73
Frequency - Transition: 4GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Voltage - Collector Emitter Breakdown (Max): 18V
Current - Collector (Ic) (Max): 150mA
Power - Max: 1W
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BFG424W,115 BFG424W_Rev2.pdf
BFG424W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 4.5V 25GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 135mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
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BFG505,215 BFG505_X_Rev4.pdf
BFG505,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 18mA
Power - Max: 150mW
Operating Temperature: 175°C (TJ)
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 15V
Supplier Device Package: SOT-143B
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BFG520/X,215 BFG520%28X%2CXR%29_Rev4.pdf
BFG520/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Part Status: Obsolete
Supplier Device Package: SOT-143B
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 70mA
Power - Max: 300mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BFG520W,115 BFG520W_X_Rev_4.pdf
BFG520W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ 4-SO
Supplier Device Package: 4-SO
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 70mA
Power - Max: 500mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Packaging: Tape & Reel (TR)
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BFG540W,115 BFG540W_WX_WXR_Rev_Oct2010.pdf
BFG540W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ 4-SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Supplier Device Package: 4-SO
Part Status: Obsolete
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BFG590,215 BFG590_X_Rev4.pdf
BFG590,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5GHZ SOT-143B
Supplier Device Package: SOT-143B
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Power - Max: 400mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BFG590/X,215 BFG590_X_Rev4.pdf
BFG590/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5GHZ SOT-143B
Supplier Device Package: SOT-143B
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 200mA
Power - Max: 400mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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BFG94,115 BFG94_Rev_Oct2010.pdf
BFG94,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 12V 6GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 5V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
Supplier Device Package: SC-73
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BFQ149,115 BFQ149.pdf
BFQ149,115
Виробник: NXP USA Inc.
Description: RF TRANS PNP 15V 5GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 70mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
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BFQ18A,115 BFQ18A_N.pdf
BFQ18A,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 18V 4GHZ SOT-89 3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4GHz
Supplier Device Package: SOT-89-3
Part Status: Obsolete
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BFQ67W,115 BFQ67W_Rev_Oct2010.pdf
BFQ67W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFR93AW,115 BFR93AW_Rev_Oct2010.pdf
BFR93AW,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 12V 5GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFS25A,115 BFS25A_CNV.pdf
BFS25A,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 5V 5GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 32mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BFT25,215 BFT25A.pdf
BFT25,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 5V 2.3GHZ SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 30mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): 5.5dB @ 500MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
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BFT93W,115 BFT93W.pdf
BFT93W,115
Виробник: NXP USA Inc.
Description: RF TRANS PNP 12V 4GHZ SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
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BGD502,112 BGD502_Rev_Nov2010.pdf
BGD502,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
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BGD702,112 BGD702.pdf
BGD702,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 425 mA
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BGD802,112 BGD802.pdf
BGD802,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Package / Case: SOT-115J
Packaging: Bulk
Current - Supply: 395 mA
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BGD804,112 BGD804.pdf
BGD804,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
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BGD812,112 BGD812_Rev_Jul2010.pdf
BGD812,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
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BGD814,112 BGD814_Rev_Jul2010.pdf
BGD814,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
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BGD816L,112 BGD816L.pdf
BGD816L,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Current - Supply: 360 mA
Number of Circuits: 1
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Package / Case: SOT-115J
Packaging: Bulk
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BGD885,112 BGD885.pdf
BGD885,112
Виробник: NXP USA Inc.
Description: IC AMP GAIN PWR 860MHZ SFM9
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BGS67A,118 BGS67A.pdf
BGS67A,118
Виробник: NXP USA Inc.
Description: IC AMP CATV DMAN8
Current - Supply: 95 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: DMAN8
Applications: CATV
Mounting Type: Surface Mount
Package / Case: SOT-567A
Packaging: Tape & Reel (TR)
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BGY585A,112 BGY585A.pdf
BGY585A,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Current - Supply: 220 mA
Number of Circuits: 1
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BGY588N,112 BGY588N.pdf
BGY588N,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 325 mA
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BGY685A,112 BGY685A.pdf
BGY685A,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 220 mA
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BGY687,112 BGY687.pdf
BGY687,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 240 mA
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BGY785A,112 BGY785A.pdf
BGY785A,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Current - Supply: 225 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BGY887B,112 BGY887B.pdf
BGY887B,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Current - Supply: 340 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BGY888,112 BGY888.pdf
BGY888,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Current - Supply: 325 mA
Number of Circuits: 1
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BLT70,115 BLT70.pdf
BLT70,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 8V 900MHZ SOT223
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BLT80,115 BLT80.pdf
BLT80,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 900MHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 150mA, 5V
Frequency - Transition: 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
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BLT81,115 BLT81.pdf
BLT81,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 9.5V 900MHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 8dB
Power - Max: 2W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 9.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Frequency - Transition: 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
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BS108,126 BS108.pdf
BS108,126
Виробник: NXP USA Inc.
Description: MOSFET N-CH 200V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 2.8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
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BS108/01,126 BS108.pdf
BS108/01,126
Виробник: NXP USA Inc.
Description: MOSFET N-CH 200V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 2.8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
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BSN254,126 BSN254%28A%29.pdf
BSN254,126
Виробник: NXP USA Inc.
Description: MOSFET N-CH 250V 310MA TO92-3
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
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BSN254A,126 BSN254%28A%29.pdf
BSN254A,126
Виробник: NXP USA Inc.
Description: MOSFET N-CH 250V 310MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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BSN304,126 BSN304.pdf
BSN304,126
Виробник: NXP USA Inc.
Description: MOSFET N-CH 300V 300MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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BSP254A,126 BSP254%28A%29.pdf
BSP254A,126
Виробник: NXP USA Inc.
Description: MOSFET P-CH 250V 200MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
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BSP304A,126 BSP304(A).pdf
BSP304A,126
Виробник: NXP USA Inc.
Description: MOSFET P-CH 300V 170MA TO92-3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.55V @ 1mA
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BSR56,215 BSR56%2C57%2C58.pdf
BSR56,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V 20MA SOT23
Supplier Device Package: SOT-23 (TO-236AB)
Current Drain (Id) - Max: 20 mA
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Resistance - RDS(On): 25 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
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BSR57,215 BSR56,57,58.pdf
BSR57,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
Resistance - RDS(On): 40 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BSR58,215 BSR56%2C57%2C58.pdf
BSR58,215
Виробник: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 0.5 nA
Resistance - RDS(On): 60 Ohms
Power - Max: 250 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BST15,115 BST15,16.pdf
BST15,115
Виробник: NXP USA Inc.
Description: TRANS PNP 200V 0.2A SOT89
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