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SS15 SS15 onsemi ss19-d.pdf description Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
7500+10.21 грн
15000+9.34 грн
22500+8.51 грн
Мінімальне замовлення: 7500
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LM431SCCMFX LM431SCCMFX onsemi lm431sa-d.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23F-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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FDV304P-D87Z FDV304P-D87Z onsemi FDV304P.pdf Description: MOSFET P-CH 25V 460MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 10 V
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TN6727A TN6727A onsemi TN6727A.pdf Description: TRANS PNP 40V 1.5A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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LM2931AZ5 LM2931AZ5 onsemi LM2931A.pdf Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 30 mA
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FMBS549 FMBS549 onsemi FMBS549.pdf Description: TRANS PNP 30V 1A SUPERSOT-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 700 mW
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FSB649 FSB649 onsemi fsb649-d.pdf Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
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KSA1381ESTSSTU KSA1381ESTSSTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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KSA1381ES KSA1381ES onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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KSB772YSTSSTU KSB772YSTSSTU onsemi ksb772-d.pdf Description: TRANS PNP 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSD882RS KSD882RS onsemi ksd882-d.pdf Description: TRANS NPN 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSB772YSTSTU KSB772YSTSTU onsemi ksb772-d.pdf Description: TRANS PNP 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSD882YSTU KSD882YSTU onsemi ksd882-d.pdf Description: TRANS NPN 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
4+88.13 грн
60+38.04 грн
Мінімальне замовлення: 4
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KSA1142YSTU KSA1142YSTU onsemi ksa1142-d.pdf Description: TRANS PNP 180V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 1.2 W
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TN6718A TN6718A onsemi TN6718A.pdf Description: TRANS NPN 100V 1.2A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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KSD882YSTSTU KSD882YSTSTU onsemi ksd882-d.pdf Description: TRANS NPN 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSB772YS KSB772YS onsemi ksb772-d.pdf Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 5861 шт:
термін постачання 21-31 дні (днів)
6+67.60 грн
10+40.46 грн
100+26.32 грн
500+18.98 грн
1000+17.14 грн
2000+15.59 грн
Мінімальне замовлення: 6
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KSA1142OSTU KSA1142OSTU onsemi ksa1142-d.pdf Description: TRANS PNP 180V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 1.2 W
на замовлення 1635 шт:
термін постачання 21-31 дні (днів)
4+85.57 грн
10+51.25 грн
100+33.62 грн
500+24.41 грн
1000+22.11 грн
Мінімальне замовлення: 4
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KSD882OS KSD882OS onsemi ksd882-d.pdf Description: TRANS NPN 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSA1381ESTSTU KSA1381ESTSTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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KSA1381ESTU KSA1381ESTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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KSD882YSTSSTU KSD882YSTSSTU onsemi ksd882-d.pdf Description: TRANS NPN 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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J174_D75Z J174_D75Z onsemi J17x%2CMMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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J174_D27Z J174_D27Z onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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J174_D74Z J174_D74Z onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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J174 J174 onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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LM336Z5 LM336Z5 onsemi lm336z5-d.pdf Description: IC VREF SHUNT 4% TO92-3
Packaging: Bulk
Tolerance: ±4%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Current - Cathode: 10 mA
Current - Output: 15 mA
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LM336Z25XA LM336Z25XA onsemi lm336z25-d.pdf Description: IC VREF SHUNT 2% TO92-3
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
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NC7SP38L6X NC7SP38L6X onsemi nc7sp38-d.pdf Description: IC GATE NAND OD 1CH 2IN 6MICROPK
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NC7SP32L6X NC7SP32L6X onsemi nc7sp32-d.pdf Description: IC GATE OR 1CH 2-INP 6MICROPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
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NC7SV86L6X NC7SV86L6X onsemi nc7sv86-d.pdf Description: IC GATE XOR 1CH 2-INP 6MICROPAK
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LM393AMX LM393AMX onsemi Description: IC COMPARATOR 2 DIFF 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Part Status: Obsolete
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NC7SP04L6X NC7SP04L6X onsemi ONSM-S-A0003590241-1.pdf?t.download=true&u=5oefqw Description: IC INVERTER 1CH 1-INP 6MICROPAK
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NC7SV32L6X NC7SV32L6X onsemi nc7sv32-d.pdf Description: IC GATE OR 1CH 2-INP 6MICROPAK
на замовлення 125000 шт:
термін постачання 21-31 дні (днів)
5000+13.62 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NC7SV04L6X NC7SV04L6X onsemi ONSM-S-A0003590925-1.pdf?t.download=true&u=5oefqw Description: IC INVERTER 1CH 1-INP 6MICROPAK
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
5000+16.33 грн
10000+14.64 грн
25000+13.88 грн
50000+12.77 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
FJN13003BU FJN13003BU onsemi FJN13003.pdf Description: TRANS NPN 400V 1.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.1 W
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NZT605 NZT605 onsemi nzt605-d.pdf Description: TRANS NPN DARL 110V 1.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 110 V
Power - Max: 1 W
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
4000+14.12 грн
8000+12.53 грн
12000+11.98 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
MMBFJ271 MMBFJ271 onsemi MMBFJ271.pdf Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 15 V
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NZT7053 NZT7053 onsemi 2n7053-d.pdf Description: TRANS NPN DARL 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+14.89 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
MMBFJ176 MMBFJ176 onsemi j175-d.pdf Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+12.42 грн
6000+10.95 грн
9000+10.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MC4558CDX MC4558CDX onsemi MC4558.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 3.5mA (x2 Channels)
Slew Rate: 1.2V/µs
Current - Input Bias: 30 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Voltage - Supply Span (Min): 44 V
Voltage - Supply Span (Max): 44 V
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MMBFJ270 MMBFJ270 onsemi mmbfj270-d.pdf Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
на замовлення 50725 шт:
термін постачання 21-31 дні (днів)
3000+11.86 грн
6000+10.44 грн
9000+9.95 грн
15000+8.81 грн
21000+8.50 грн
30000+8.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
J177_D74Z J177_D74Z onsemi J17x%2CMMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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J177_D26Z J177_D26Z onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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J176_D27Z J176_D27Z onsemi J17x%2CMMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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J175_D74Z J175_D74Z onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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J177_D27Z J177_D27Z onsemi J17x%2CMMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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J177_D75Z J177_D75Z onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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J175_D75Z J175_D75Z onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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J176 J176 onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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J176_D26Z J176_D26Z onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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J177 J177 onsemi J17x,MMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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J175_D27Z J175_D27Z onsemi J17x%2CMMBFJ17x.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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J176-D74Z J176-D74Z onsemi j175-d.pdf Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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FOD817DSD FOD817DSD onsemi FOD814-D.PDF Description: OPTOISO 5KV 1CH TRANS 4-PDIP-GW
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 300% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-PDIP-GW
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)
1000+13.50 грн
2000+12.15 грн
3000+11.72 грн
5000+10.54 грн
7000+10.26 грн
10000+10.00 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FOD817C3SD FOD817C3SD onsemi fod814-d.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+12.99 грн
2000+11.69 грн
3000+11.27 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FOD817D3SD FOD817D3SD onsemi FOD814-D.PDF Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 300% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
1000+13.44 грн
2000+12.09 грн
3000+11.66 грн
5000+10.48 грн
7000+10.20 грн
10000+9.93 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
LM431SBCMFX LM431SBCMFX onsemi lm431sa-d.pdf Description: IC VREF SHUNT ADJ 1% SOT23F-3
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товару немає в наявності
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FOD817BSD FOD817BSD onsemi fod814-d.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 67000 шт:
термін постачання 21-31 дні (днів)
1000+12.71 грн
2000+11.43 грн
3000+11.02 грн
5000+9.90 грн
7000+9.64 грн
10000+9.39 грн
25000+8.68 грн
50000+8.33 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FOD817B3SD FOD817B3SD onsemi fod814-d.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
1000+14.09 грн
2000+12.69 грн
3000+12.24 грн
5000+11.01 грн
7000+10.73 грн
10000+10.45 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SS15 description ss19-d.pdf
SS15
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+10.21 грн
15000+9.34 грн
22500+8.51 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
LM431SCCMFX lm431sa-d.pdf
LM431SCCMFX
Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.5% SOT23F-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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FDV304P-D87Z FDV304P.pdf
FDV304P-D87Z
Виробник: onsemi
Description: MOSFET P-CH 25V 460MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 10 V
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TN6727A TN6727A.pdf
TN6727A
Виробник: onsemi
Description: TRANS PNP 40V 1.5A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товару немає в наявності
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LM2931AZ5 LM2931A.pdf
LM2931AZ5
Виробник: onsemi
Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Over Voltage
Current - Supply (Max): 30 mA
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FMBS549 FMBS549.pdf
FMBS549
Виробник: onsemi
Description: TRANS PNP 30V 1A SUPERSOT-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 700 mW
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FSB649 fsb649-d.pdf
FSB649
Виробник: onsemi
Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
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KSA1381ESTSSTU ksa1381-d.pdf
KSA1381ESTSSTU
Виробник: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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KSA1381ES ksa1381-d.pdf
KSA1381ES
Виробник: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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KSB772YSTSSTU ksb772-d.pdf
KSB772YSTSSTU
Виробник: onsemi
Description: TRANS PNP 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSD882RS ksd882-d.pdf
KSD882RS
Виробник: onsemi
Description: TRANS NPN 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSB772YSTSTU ksb772-d.pdf
KSB772YSTSTU
Виробник: onsemi
Description: TRANS PNP 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSD882YSTU ksd882-d.pdf
KSD882YSTU
Виробник: onsemi
Description: TRANS NPN 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.13 грн
60+38.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
KSA1142YSTU ksa1142-d.pdf
KSA1142YSTU
Виробник: onsemi
Description: TRANS PNP 180V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 1.2 W
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TN6718A TN6718A.pdf
TN6718A
Виробник: onsemi
Description: TRANS NPN 100V 1.2A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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KSD882YSTSTU ksd882-d.pdf
KSD882YSTSTU
Виробник: onsemi
Description: TRANS NPN 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSB772YS ksb772-d.pdf
KSB772YS
Виробник: onsemi
Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 5861 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+67.60 грн
10+40.46 грн
100+26.32 грн
500+18.98 грн
1000+17.14 грн
2000+15.59 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
KSA1142OSTU ksa1142-d.pdf
KSA1142OSTU
Виробник: onsemi
Description: TRANS PNP 180V 0.1A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 1.2 W
на замовлення 1635 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.57 грн
10+51.25 грн
100+33.62 грн
500+24.41 грн
1000+22.11 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
KSD882OS ksd882-d.pdf
KSD882OS
Виробник: onsemi
Description: TRANS NPN 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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KSA1381ESTSTU ksa1381-d.pdf
KSA1381ESTSTU
Виробник: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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KSA1381ESTU ksa1381-d.pdf
KSA1381ESTU
Виробник: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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KSD882YSTSSTU ksd882-d.pdf
KSD882YSTSSTU
Виробник: onsemi
Description: TRANS NPN 30V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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J174_D75Z J17x%2CMMBFJ17x.pdf
J174_D75Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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J174_D27Z J17x,MMBFJ17x.pdf
J174_D27Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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J174_D74Z J17x,MMBFJ17x.pdf
J174_D74Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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J174 J17x,MMBFJ17x.pdf
J174
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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LM336Z5 lm336z5-d.pdf
LM336Z5
Виробник: onsemi
Description: IC VREF SHUNT 4% TO92-3
Packaging: Bulk
Tolerance: ±4%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Current - Cathode: 10 mA
Current - Output: 15 mA
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LM336Z25XA lm336z25-d.pdf
LM336Z25XA
Виробник: onsemi
Description: IC VREF SHUNT 2% TO92-3
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
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NC7SP38L6X nc7sp38-d.pdf
NC7SP38L6X
Виробник: onsemi
Description: IC GATE NAND OD 1CH 2IN 6MICROPK
товару немає в наявності
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NC7SP32L6X nc7sp32-d.pdf
NC7SP32L6X
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP 6MICROPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
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NC7SV86L6X nc7sv86-d.pdf
NC7SV86L6X
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP 6MICROPAK
товару немає в наявності
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LM393AMX
LM393AMX
Виробник: onsemi
Description: IC COMPARATOR 2 DIFF 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Part Status: Obsolete
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NC7SP04L6X ONSM-S-A0003590241-1.pdf?t.download=true&u=5oefqw
NC7SP04L6X
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
товару немає в наявності
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NC7SV32L6X nc7sv32-d.pdf
NC7SV32L6X
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP 6MICROPAK
на замовлення 125000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+13.62 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NC7SV04L6X ONSM-S-A0003590925-1.pdf?t.download=true&u=5oefqw
NC7SV04L6X
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+16.33 грн
10000+14.64 грн
25000+13.88 грн
50000+12.77 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
FJN13003BU FJN13003.pdf
FJN13003BU
Виробник: onsemi
Description: TRANS NPN 400V 1.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.1 W
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NZT605 nzt605-d.pdf
NZT605
Виробник: onsemi
Description: TRANS NPN DARL 110V 1.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 110 V
Power - Max: 1 W
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+14.12 грн
8000+12.53 грн
12000+11.98 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
MMBFJ271 MMBFJ271.pdf
MMBFJ271
Виробник: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 15 V
товару немає в наявності
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NZT7053 2n7053-d.pdf
NZT7053
Виробник: onsemi
Description: TRANS NPN DARL 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+14.89 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
MMBFJ176 j175-d.pdf
MMBFJ176
Виробник: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.42 грн
6000+10.95 грн
9000+10.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MC4558CDX MC4558.pdf
MC4558CDX
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 3.5mA (x2 Channels)
Slew Rate: 1.2V/µs
Current - Input Bias: 30 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Voltage - Supply Span (Min): 44 V
Voltage - Supply Span (Max): 44 V
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MMBFJ270 mmbfj270-d.pdf
MMBFJ270
Виробник: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
на замовлення 50725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.86 грн
6000+10.44 грн
9000+9.95 грн
15000+8.81 грн
21000+8.50 грн
30000+8.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
J177_D74Z J17x%2CMMBFJ17x.pdf
J177_D74Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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J177_D26Z J17x,MMBFJ17x.pdf
J177_D26Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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J176_D27Z J17x%2CMMBFJ17x.pdf
J176_D27Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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J175_D74Z J17x,MMBFJ17x.pdf
J175_D74Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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J177_D27Z J17x%2CMMBFJ17x.pdf
J177_D27Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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J177_D75Z J17x,MMBFJ17x.pdf
J177_D75Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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J175_D75Z J17x,MMBFJ17x.pdf
J175_D75Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
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J176 J17x,MMBFJ17x.pdf
J176
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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J176_D26Z J17x,MMBFJ17x.pdf
J176_D26Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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J177 J17x,MMBFJ17x.pdf
J177
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
товару немає в наявності
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J175_D27Z J17x%2CMMBFJ17x.pdf
J175_D27Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
товару немає в наявності
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J176-D74Z j175-d.pdf
J176-D74Z
Виробник: onsemi
Description: JFET P-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 250 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
товару немає в наявності
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FOD817DSD FOD814-D.PDF
FOD817DSD
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS 4-PDIP-GW
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 300% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-PDIP-GW
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+13.50 грн
2000+12.15 грн
3000+11.72 грн
5000+10.54 грн
7000+10.26 грн
10000+10.00 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FOD817C3SD fod814-d.pdf
FOD817C3SD
Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+12.99 грн
2000+11.69 грн
3000+11.27 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FOD817D3SD FOD814-D.PDF
FOD817D3SD
Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 300% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+13.44 грн
2000+12.09 грн
3000+11.66 грн
5000+10.48 грн
7000+10.20 грн
10000+9.93 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
LM431SBCMFX lm431sa-d.pdf
LM431SBCMFX
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% SOT23F-3
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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FOD817BSD fod814-d.pdf
FOD817BSD
Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 67000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+12.71 грн
2000+11.43 грн
3000+11.02 грн
5000+9.90 грн
7000+9.64 грн
10000+9.39 грн
25000+8.68 грн
50000+8.33 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FOD817B3SD fod814-d.pdf
FOD817B3SD
Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 130% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 260% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+14.09 грн
2000+12.69 грн
3000+12.24 грн
5000+11.01 грн
7000+10.73 грн
10000+10.45 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
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