| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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NCP167AFCT330T2G | onsemi |
 Description: IC REG LINEAR 3.3V 700MA 4WLCSPPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 700mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 18 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WLCSP (0.64x0.64) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 83dB ~ 63dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.29V @ 700mA Protection Features: Over Current, Over Temperature |
на замовлення 8898 шт: термін постачання 21-31 дні (днів) |
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NCP151AAMX330180TCG | onsemi |
Description: IC REG LIN 3.3V/1.8V 300MA 4XDFN Protection Features: Over Current, Over Temperature PSRR: 70dB (1kHz) Part Status: Active Control Features: Current Limit, Enable, Soft Start Voltage - Output (Min/Fixed): 3.3V, 1.8V Supplier Device Package: 4-XDFN (1x1) Number of Regulators: 2 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 200 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 300mA, 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 14400 шт: термін постачання 21-31 дні (днів) |
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NCL2801CDADR2G | onsemi |
Description: IC PFC CTRLR CRM/DCM 8SOIC Current - Startup: 10 µA Part Status: Active Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Voltage - Supply: 10.5V ~ 27V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2329 шт: термін постачання 21-31 дні (днів) |
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NCL2801CDBDR2G | onsemi |
Description: IC PFC CTRLR CRM/DCM 8SOIC Current - Startup: 10 µA Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Voltage - Supply: 10.5V ~ 27V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 4996 шт: термін постачання 21-31 дні (днів) |
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NCL2801CFADR2G | onsemi |
Description: IC PFC CTRLR CRM/DCM 8SOIC Current - Startup: 10 µA Part Status: Active Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Voltage - Supply: 10.5V ~ 27V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 96974 шт: термін постачання 21-31 дні (днів) |
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NCP13992ABDR2G | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOIC Control Features: EN, Frequency Control, Soft Start, Sync Voltage - Start Up: 9 V Fault Protection: Over Current, Over/Under Voltage, Short Circuit Supplier Device Package: 16-SOIC Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V Topology: Half-Bridge Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 20kHz ~ 750kHz Duty Cycle: 50% Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads Packaging: Cut Tape (CT) |
на замовлення 14654 шт: термін постачання 21-31 дні (днів) |
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NCP13992ACDR2G | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOIC Control Features: EN, Frequency Control, Soft Start, Sync Voltage - Start Up: 9 V Fault Protection: Over Current, Over/Under Voltage, Short Circuit Supplier Device Package: 16-SOIC Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V Topology: Half-Bridge Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 20kHz ~ 750kHz Duty Cycle: 50% Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads Packaging: Cut Tape (CT) |
на замовлення 4892 шт: термін постачання 21-31 дні (днів) |
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NCP1616A2DR2G | onsemi |
Description: IC PFC CTLR CCFF/CRM 26KHZ 9SOIC Packaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9.5V ~ 28V Frequency - Switching: 26kHz Mode: Current Controlled Frequency Foldback (CCFF), Critical Conduction (CRM) Supplier Device Package: 9-SOIC Part Status: Active Current - Startup: 12 mA |
на замовлення 1926 шт: термін постачання 21-31 дні (днів) |
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NCP148AFCT285T2G | onsemi |
Description: IC REG LIN 2.85V 450MA 4-WLCSP Current - Quiescent (Iq): 65 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 450mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.85V Supplier Device Package: 4-WLCSP (0.64x0.64) Number of Regulators: 1 Voltage - Input (Max): 5.5V |
на замовлення 4780 шт: термін постачання 21-31 дні (днів) |
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NCS20071XV53T2G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT SOT553 Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: SOT-553 Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive Voltage - Supply Span (Max): 36 V Voltage - Supply Span (Min): 2.7 V Current - Output / Channel: 65 mA Number of Circuits: 1 Part Status: Active Supplier Device Package: SOT-553 Voltage - Input Offset: 1.3 mV Current - Input Bias: 5 pA Gain Bandwidth Product: 3 MHz Slew Rate: 2.4V/µs Current - Supply: 480µA Operating Temperature: -40°C ~ 125°C (TA) Amplifier Type: Standard (General Purpose) |
на замовлення 9838 шт: термін постачання 21-31 дні (днів) |
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NCP4306AAAZZZAMN1TBG | onsemi |
Description: IC PM SEC CTRL SYNC RECT 8-DFN Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 35V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-DFN (2x2.2) Part Status: Active Current - Supply: 1.4 mA DigiKey Programmable: Not Verified |
на замовлення 9551 шт: термін постачання 21-31 дні (днів) |
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NCP4306AADZZZAMN1TBG | onsemi |
Description: IC PM SEC CTRL SYNC RECT 8-DFN Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 35V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-DFN (2x2.2) Part Status: Active Current - Supply: 1.4 mA DigiKey Programmable: Not Verified |
на замовлення 21020 шт: термін постачання 21-31 дні (днів) |
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NCP4306AADZZZAMNTWG | onsemi |
Description: IC PM SEC CTRL SYNC RECT 8-DFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 35V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-DFN (4x4) Part Status: Active Current - Supply: 1.4 mA DigiKey Programmable: Not Verified |
на замовлення 2543 шт: термін постачання 21-31 дні (днів) |
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NVB072N65S3 | onsemi |
Description: MOSFET N-CH 650V 44A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 807 шт: термін постачання 21-31 дні (днів) |
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NTB110N65S3HF | onsemi |
Description: MOSFET N-CH 650V 30A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 740µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V |
на замовлення 728 шт: термін постачання 21-31 дні (днів) |
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NTMTS0D6N04CLTXG | onsemi |
Description: MOSFET N-CH 40V 554.5A Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 5W Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMTS0D6N04CTXG | onsemi |
Description: MOSFET N-CH 40V 533A Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 533A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
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NTMTS001N06CLTXG | onsemi |
Description: MOSFET N-CH 60V 398.2A Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 398.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4423 шт: термін постачання 21-31 дні (днів) |
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FSA1153UCX | onsemi |
Description: IC SWITCH DP3T X 1 2OHM 12WLCSP Package / Case: 12-UFBGA, WLCSP Packaging: Cut Tape (CT) Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 100nA Channel Capacitance (CS(off), CD(off)): 2.5pF, 7pF Switch Time (Ton, Toff) (Max): 80µs, 400ns (Typ) Channel-to-Channel Matching (ΔRon): 200mOhm (Max) Multiplexer/Demultiplexer Circuit: 3:1 Switch Circuit: DP3T Crosstalk: -120dB @ 1kHz Voltage - Supply, Single (V+): 2.7V ~ 5.5V Supplier Device Package: 12-WLCSP (1.41x1.575) -3db Bandwidth: 500MHz On-State Resistance (Max): 2Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount |
на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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AX5031-1-TW30 | onsemi |
Description: RF TX IC ISM 400-470MHZ 20VFQFN DigiKey Programmable: Not Verified Supplier Device Package: 20-QFN (4x4) Current - Transmitting: 45mA Data Rate (Max): 2Mbps Applications: General Purpose Power - Output: 15dBm Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Data Interface: SPI Modulation or Protocol: ISM Frequency: 400MHz ~ 470MHz, 800MHz ~ 940MHz Mounting Type: Surface Mount Package / Case: 20-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AX5043-1-TW30 | onsemi |
Description: IC RF TXRX ISM<1GHZ 28QFN DigiKey Programmable: Not Verified Serial Interfaces: SPI, UART RF Family/Standard: General ISM < 1GHz Modulation: 4FSK, ASK, AFSK, FSK, GFSK, GMSK, MSK, PSK Supplier Device Package: 28-QFN (5x5) Current - Transmitting: 7.5mA ~ 48mA Data Rate (Max): 125kbps Current - Receiving: 6.5mA ~ 11mA Power - Output: 16dBm (Max) Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C Type: TxRx Only Frequency: 27MHz ~ 1.05GHz Mounting Type: Surface Mount Sensitivity: -137dBm Package / Case: 28-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CAT5132ZI-10-GT3 | onsemi |
Description: IC DGTL POT 10KOHM 128TAP 10MSOP DigiKey Programmable: Not Verified Number of Circuits: 1 Temperature Coefficient (Typ): ±300ppm/°C Resistance - Wiper (Ohms) (Typ): 110 Supplier Device Package: 10-MSOP Taper: Linear Voltage - Supply: 2.7V ~ 5.5V, 8V ~ 16V Number of Taps: 128 Operating Temperature: -40°C ~ 85°C Configuration: Potentiometer Interface: I²C Memory Type: Non-Volatile Mounting Type: Surface Mount Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Features: Selectable Address Tolerance: ±20% Resistance (Ohms): 10k Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDWS9508L-F085 | onsemi |
Description: MOSFET P-CH 40V 80A 8PQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NB3N502DR2G | onsemi |
Description: IC PLL CLOCK MULTIPLIER 8SOIC DigiKey Programmable: Not Verified Number of Circuits: 1 Part Status: Active Divider/Multiplier: Yes/Yes PLL: Yes with Bypass Supplier Device Package: 8-SOIC Differential - Input:Output: No/No Ratio - Input:Output: 1:2 Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Input: Clock, Crystal Type: PLL Clock Multiplier Frequency - Max: 190MHz Output: CMOS, TTL Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTHL080N120SC1 | onsemi |
Description: SICFET N-CH 1200V 44A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -15V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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В кошику од. на суму грн. | ||||||||||||||||||
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NVHL080N120SC1 | onsemi |
Description: SICFET N-CH 1200V 44A TO247-3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -15V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Not For New Designs Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 134411 шт: термін постачання 21-31 дні (днів) |
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FSB50825B | onsemi |
Description: MOSFET IPM 250V 3.6A 23-PWRDIP Voltage: 250 V Current: 3.6 A Voltage - Isolation: 1500Vrms Configuration: 3 Phase Inverter Type: MOSFET Mounting Type: Through Hole Package / Case: 23-PowerDIP Module (0.551", 14.00mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC78L05ABPRPG | onsemi |
Description: IC REG LINEAR 5V 100MA TO92 Voltage - Input (Max): 30V Current - Quiescent (Iq): 6 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 100mA Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Box (TB) Protection Features: Over Temperature, Short Circuit PSRR: 49dB (120Hz) Part Status: Active Voltage - Output (Min/Fixed): 5V Supplier Device Package: TO-92 (TO-226) Number of Regulators: 1 Qualification: AEC-Q100 Grade: Automotive |
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5285-MMBFJ201 | onsemi |
Description: JFET N-CH 40V SOT23-3 Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Power - Max: 350 mW Part Status: Obsolete Supplier Device Package: SOT-23-3 Voltage - Breakdown (V(BR)GSS): 40 V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
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FDN337N-F169 | onsemi |
Description: MOSFET N-CH 30V 2.2A SOT23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
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FDN360P-NBGT003B | onsemi |
Description: MOSFET P-CH 30V 2A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
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| AR0542MBSC25SUD20 | onsemi |
Description: IC IMAGE SENSOR 5 MP Active Pixel Array: 2592H x 1944V Pixel Size: 1.4µm x 1.4µm Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 3.1V Operating Temperature: -30°C ~ 70°C (TJ) Type: CMOS Package / Case: Die Packaging: Tray Frames per Second: 15 Part Status: Obsolete Supplier Device Package: Die |
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BYW29-200H | onsemi |
Description: DIODE STANDARD 200V 8A TO2202 Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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В кошику од. на суму грн. | ||||||||||||||||||
| MBR0520LT1H | onsemi |
Description: DIODE SCHOTTKY 20V 500MA SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Current - Reverse Leakage @ Vr: 250 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBR0530T1H | onsemi |
Description: DIODE SCHOTTKY 30V 500MA SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Current - Reverse Leakage @ Vr: 130 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBR0540T1H | onsemi |
Description: DIODE SCHOTTKY 40V 500MA SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA Current - Reverse Leakage @ Vr: 20 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBR1045H | onsemi |
Description: DIODE SCHOTTKY 45V 10A TO2202 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBR1060H | onsemi |
Description: DIODE SCHOTTKY 60V 10A TO2202 Operating Temperature - Junction: -65°C ~ 175°C Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
MBR120LSFT1H | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD123FL Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Bulk Current - Reverse Leakage @ Vr: 400 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123FL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
MBR130LSFT1H | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD123FL Current - Reverse Leakage @ Vr: 1 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBR130T1H | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD123 Current - Reverse Leakage @ Vr: 60 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
MBR140SFT1H | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD123FL Packaging: Bulk Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBR16100CTH | onsemi |
Description: DIODE ARR SCHOTT 100V 8A TO220 Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MBR1645H | onsemi |
Description: DIODE SCHOTTKY 45V 16A TO2202 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 16A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16 Voltage Coupled to Current - Reverse Leakage @ Vr: 45 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
MBR20L45CTH | onsemi |
Description: DIODE SCHOTTKY Current - Reverse Leakage @ Vr: 500 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
MBR230LSFT1H | onsemi |
Description: DIODE SCHOTTKY 30V 2A SOD123FL Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Bulk Current - Reverse Leakage @ Vr: 1 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
MBR40250TH | onsemi |
Description: DIODE SCHOTTKY 250V 40A TO2202 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Schottky Capacitance @ Vr, F: 500pF @ 5V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A Current - Reverse Leakage @ Vr: 250 µA @ 250 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBR41H100CTH | onsemi |
Description: DIODE ARR SCHOTT 100V 20A TO-220 Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBRA210ET3H | onsemi |
Description: DIODE SCHOTTKY 10V 2A SMA Current - Reverse Leakage @ Vr: 50 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 10 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SMA Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
MBRA210LT3H | onsemi |
Description: DIODE SCHOTTKY 10V 2A SMA Current - Reverse Leakage @ Vr: 700 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 10 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SMA Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBRA340T3H | onsemi |
Description: DIODE SCHOTTKY 40V 3A SMA Current - Reverse Leakage @ Vr: 300 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBRB2515LT4H | onsemi | Description: DIODE SCHOTTKY 15V 25A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MBRB41H100CT-1H | onsemi |
Description: DIODE ARRAY SCHOT 100V 20A TO262 Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-262 (I2PAK) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
MBRD660CTT4H | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
MBRD835LT4H | onsemi |
Description: DIODE SCHOTTKY 35V 8A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBRM120ET1H | onsemi |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Packaging: Bulk Mounting Type: Surface Mount Package / Case: DO-216AA Current - Reverse Leakage @ Vr: 10 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 595 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: Powermite Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
MBRM120LT3H | onsemi |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Current - Reverse Leakage @ Vr: 40 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Powermite Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBRM140T3H | onsemi |
Description: DIODE SCHOTTKY 40V 1A POWERMITE Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: Powermite Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBRS1100T3H | onsemi |
Description: DIODE SCHOTTKY 100V 2A SMB Package / Case: DO-214AA, SMB Packaging: Bulk Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 500 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MBRS130LT3H | onsemi |
Description: DIODE SCHOTTKY 30V 2A SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP167AFCT330T2G |
|
Виробник: onsemi
Description: IC REG LINEAR 3.3V 700MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 18 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.64x0.64)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 83dB ~ 63dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.29V @ 700mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 700MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 18 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.64x0.64)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 83dB ~ 63dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.29V @ 700mA
Protection Features: Over Current, Over Temperature
на замовлення 8898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.47 грн |
| 11+ | 27.18 грн |
| 25+ | 25.34 грн |
| 100+ | 17.66 грн |
| 250+ | 14.95 грн |
| 500+ | 14.27 грн |
| 1000+ | 10.36 грн |
| 2500+ | 9.69 грн |
| 5000+ | 9.02 грн |
| NCP151AAMX330180TCG |
|
Виробник: onsemi
Description: IC REG LIN 3.3V/1.8V 300MA 4XDFN
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Current Limit, Enable, Soft Start
Voltage - Output (Min/Fixed): 3.3V, 1.8V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LIN 3.3V/1.8V 300MA 4XDFN
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Current Limit, Enable, Soft Start
Voltage - Output (Min/Fixed): 3.3V, 1.8V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 2
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 14400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.16 грн |
| 10+ | 38.57 грн |
| 25+ | 36.01 грн |
| 100+ | 25.08 грн |
| 250+ | 21.22 грн |
| 500+ | 20.26 грн |
| 1000+ | 14.71 грн |
| 2500+ | 13.76 грн |
| NCL2801CDADR2G |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM/DCM 8SOIC
Current - Startup: 10 µA
Part Status: Active
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V ~ 27V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PFC CTRLR CRM/DCM 8SOIC
Current - Startup: 10 µA
Part Status: Active
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V ~ 27V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.17 грн |
| 10+ | 54.72 грн |
| 25+ | 51.40 грн |
| 100+ | 36.57 грн |
| 250+ | 31.12 грн |
| 500+ | 29.57 грн |
| 1000+ | 22.19 грн |
| NCL2801CDBDR2G |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM/DCM 8SOIC
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V ~ 27V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PFC CTRLR CRM/DCM 8SOIC
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V ~ 27V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 4996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.17 грн |
| 10+ | 54.72 грн |
| 25+ | 51.40 грн |
| 100+ | 36.57 грн |
| 250+ | 31.12 грн |
| 500+ | 29.57 грн |
| 1000+ | 22.19 грн |
| NCL2801CFADR2G |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM/DCM 8SOIC
Current - Startup: 10 µA
Part Status: Active
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V ~ 27V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PFC CTRLR CRM/DCM 8SOIC
Current - Startup: 10 µA
Part Status: Active
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V ~ 27V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 96974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.17 грн |
| 10+ | 54.72 грн |
| 25+ | 51.40 грн |
| 100+ | 36.57 грн |
| 250+ | 31.12 грн |
| 500+ | 29.57 грн |
| 1000+ | 22.19 грн |
| NCP13992ABDR2G |
|
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Control Features: EN, Frequency Control, Soft Start, Sync
Voltage - Start Up: 9 V
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 20kHz ~ 750kHz
Duty Cycle: 50%
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Packaging: Cut Tape (CT)
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Control Features: EN, Frequency Control, Soft Start, Sync
Voltage - Start Up: 9 V
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 20kHz ~ 750kHz
Duty Cycle: 50%
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Packaging: Cut Tape (CT)
на замовлення 14654 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.08 грн |
| 10+ | 97.01 грн |
| 25+ | 88.36 грн |
| 100+ | 74.02 грн |
| 250+ | 69.77 грн |
| 500+ | 67.34 грн |
| NCP13992ACDR2G |
|
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Control Features: EN, Frequency Control, Soft Start, Sync
Voltage - Start Up: 9 V
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 20kHz ~ 750kHz
Duty Cycle: 50%
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Packaging: Cut Tape (CT)
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Control Features: EN, Frequency Control, Soft Start, Sync
Voltage - Start Up: 9 V
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 20kHz ~ 750kHz
Duty Cycle: 50%
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Packaging: Cut Tape (CT)
на замовлення 4892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.08 грн |
| 10+ | 96.49 грн |
| 25+ | 87.92 грн |
| 100+ | 73.63 грн |
| 250+ | 69.41 грн |
| 500+ | 66.98 грн |
| NCP1616A2DR2G |
|
Виробник: onsemi
Description: IC PFC CTLR CCFF/CRM 26KHZ 9SOIC
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 28V
Frequency - Switching: 26kHz
Mode: Current Controlled Frequency Foldback (CCFF), Critical Conduction (CRM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 12 mA
Description: IC PFC CTLR CCFF/CRM 26KHZ 9SOIC
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 28V
Frequency - Switching: 26kHz
Mode: Current Controlled Frequency Foldback (CCFF), Critical Conduction (CRM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 12 mA
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.74 грн |
| 10+ | 70.29 грн |
| 25+ | 63.79 грн |
| 100+ | 53.14 грн |
| 250+ | 49.92 грн |
| 500+ | 47.99 грн |
| 1000+ | 46.69 грн |
| NCP148AFCT285T2G |
|
Виробник: onsemi
Description: IC REG LIN 2.85V 450MA 4-WLCSP
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.85V
Supplier Device Package: 4-WLCSP (0.64x0.64)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Description: IC REG LIN 2.85V 450MA 4-WLCSP
Current - Quiescent (Iq): 65 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.85V
Supplier Device Package: 4-WLCSP (0.64x0.64)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
на замовлення 4780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.88 грн |
| 22+ | 13.77 грн |
| 25+ | 12.24 грн |
| 100+ | 9.89 грн |
| 250+ | 9.12 грн |
| 500+ | 8.66 грн |
| 1000+ | 8.15 грн |
| 2500+ | 7.75 грн |
| NCS20071XV53T2G |
|
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT SOT553
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 65 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SOT-553
Voltage - Input Offset: 1.3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 3 MHz
Slew Rate: 2.4V/µs
Current - Supply: 480µA
Operating Temperature: -40°C ~ 125°C (TA)
Amplifier Type: Standard (General Purpose)
Description: IC OPAMP GP 1 CIRCUIT SOT553
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 65 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SOT-553
Voltage - Input Offset: 1.3 mV
Current - Input Bias: 5 pA
Gain Bandwidth Product: 3 MHz
Slew Rate: 2.4V/µs
Current - Supply: 480µA
Operating Temperature: -40°C ~ 125°C (TA)
Amplifier Type: Standard (General Purpose)
на замовлення 9838 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.97 грн |
| 19+ | 16.08 грн |
| 25+ | 14.33 грн |
| 100+ | 11.61 грн |
| 250+ | 10.72 грн |
| 500+ | 10.19 грн |
| 1000+ | 9.60 грн |
| NCP4306AAAZZZAMN1TBG |
|
Виробник: onsemi
Description: IC PM SEC CTRL SYNC RECT 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
Description: IC PM SEC CTRL SYNC RECT 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
на замовлення 9551 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.32 грн |
| 10+ | 53.91 грн |
| 25+ | 48.72 грн |
| 100+ | 40.39 грн |
| 250+ | 37.84 грн |
| 500+ | 36.31 грн |
| 1000+ | 34.94 грн |
| NCP4306AADZZZAMN1TBG |
|
Виробник: onsemi
Description: IC PM SEC CTRL SYNC RECT 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
Description: IC PM SEC CTRL SYNC RECT 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
на замовлення 21020 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.81 грн |
| 10+ | 47.87 грн |
| 25+ | 43.21 грн |
| 100+ | 35.73 грн |
| 250+ | 33.44 грн |
| 500+ | 32.05 грн |
| 1000+ | 30.69 грн |
| NCP4306AADZZZAMNTWG |
|
Виробник: onsemi
Description: IC PM SEC CTRL SYNC RECT 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
Description: IC PM SEC CTRL SYNC RECT 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
на замовлення 2543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.32 грн |
| 10+ | 53.91 грн |
| 25+ | 48.72 грн |
| 100+ | 40.39 грн |
| 250+ | 37.84 грн |
| 500+ | 36.31 грн |
| 1000+ | 34.94 грн |
| NVB072N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 44A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 44A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 807 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 652.57 грн |
| 10+ | 430.27 грн |
| 100+ | 322.04 грн |
| NTB110N65S3HF |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V
Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 512.62 грн |
| 10+ | 333.85 грн |
| 100+ | 243.50 грн |
| NTMTS0D6N04CLTXG |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 554.5A
Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 5W
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
Description: MOSFET N-CH 40V 554.5A
Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 5W
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.38 грн |
| 10+ | 271.68 грн |
| 100+ | 195.58 грн |
| 500+ | 152.90 грн |
| 1000+ | 151.84 грн |
| NTMTS0D6N04CTXG |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 533A
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 533A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 533A
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 533A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTMTS001N06CLTXG |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 398.2A
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W
Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 398.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 398.2A
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W
Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 398.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4423 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.50 грн |
| 10+ | 183.98 грн |
| FSA1153UCX |
|
Виробник: onsemi
Description: IC SWITCH DP3T X 1 2OHM 12WLCSP
Package / Case: 12-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 2.5pF, 7pF
Switch Time (Ton, Toff) (Max): 80µs, 400ns (Typ)
Channel-to-Channel Matching (ΔRon): 200mOhm (Max)
Multiplexer/Demultiplexer Circuit: 3:1
Switch Circuit: DP3T
Crosstalk: -120dB @ 1kHz
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 12-WLCSP (1.41x1.575)
-3db Bandwidth: 500MHz
On-State Resistance (Max): 2Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Description: IC SWITCH DP3T X 1 2OHM 12WLCSP
Package / Case: 12-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 2.5pF, 7pF
Switch Time (Ton, Toff) (Max): 80µs, 400ns (Typ)
Channel-to-Channel Matching (ΔRon): 200mOhm (Max)
Multiplexer/Demultiplexer Circuit: 3:1
Switch Circuit: DP3T
Crosstalk: -120dB @ 1kHz
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 12-WLCSP (1.41x1.575)
-3db Bandwidth: 500MHz
On-State Resistance (Max): 2Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.13 грн |
| 10+ | 61.28 грн |
| 25+ | 58.19 грн |
| 100+ | 41.95 грн |
| 250+ | 37.07 грн |
| 500+ | 35.12 грн |
| 1000+ | 26.87 грн |
| AX5031-1-TW30 |
Виробник: onsemi
Description: RF TX IC ISM 400-470MHZ 20VFQFN
DigiKey Programmable: Not Verified
Supplier Device Package: 20-QFN (4x4)
Current - Transmitting: 45mA
Data Rate (Max): 2Mbps
Applications: General Purpose
Power - Output: 15dBm
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Data Interface: SPI
Modulation or Protocol: ISM
Frequency: 400MHz ~ 470MHz, 800MHz ~ 940MHz
Mounting Type: Surface Mount
Package / Case: 20-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: RF TX IC ISM 400-470MHZ 20VFQFN
DigiKey Programmable: Not Verified
Supplier Device Package: 20-QFN (4x4)
Current - Transmitting: 45mA
Data Rate (Max): 2Mbps
Applications: General Purpose
Power - Output: 15dBm
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Data Interface: SPI
Modulation or Protocol: ISM
Frequency: 400MHz ~ 470MHz, 800MHz ~ 940MHz
Mounting Type: Surface Mount
Package / Case: 20-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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| AX5043-1-TW30 |
|
Виробник: onsemi
Description: IC RF TXRX ISM<1GHZ 28QFN
DigiKey Programmable: Not Verified
Serial Interfaces: SPI, UART
RF Family/Standard: General ISM < 1GHz
Modulation: 4FSK, ASK, AFSK, FSK, GFSK, GMSK, MSK, PSK
Supplier Device Package: 28-QFN (5x5)
Current - Transmitting: 7.5mA ~ 48mA
Data Rate (Max): 125kbps
Current - Receiving: 6.5mA ~ 11mA
Power - Output: 16dBm (Max)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx Only
Frequency: 27MHz ~ 1.05GHz
Mounting Type: Surface Mount
Sensitivity: -137dBm
Package / Case: 28-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC RF TXRX ISM<1GHZ 28QFN
DigiKey Programmable: Not Verified
Serial Interfaces: SPI, UART
RF Family/Standard: General ISM < 1GHz
Modulation: 4FSK, ASK, AFSK, FSK, GFSK, GMSK, MSK, PSK
Supplier Device Package: 28-QFN (5x5)
Current - Transmitting: 7.5mA ~ 48mA
Data Rate (Max): 125kbps
Current - Receiving: 6.5mA ~ 11mA
Power - Output: 16dBm (Max)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx Only
Frequency: 27MHz ~ 1.05GHz
Mounting Type: Surface Mount
Sensitivity: -137dBm
Package / Case: 28-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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| CAT5132ZI-10-GT3 |
|
Виробник: onsemi
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Temperature Coefficient (Typ): ±300ppm/°C
Resistance - Wiper (Ohms) (Typ): 110
Supplier Device Package: 10-MSOP
Taper: Linear
Voltage - Supply: 2.7V ~ 5.5V, 8V ~ 16V
Number of Taps: 128
Operating Temperature: -40°C ~ 85°C
Configuration: Potentiometer
Interface: I²C
Memory Type: Non-Volatile
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Features: Selectable Address
Tolerance: ±20%
Resistance (Ohms): 10k
Packaging: Cut Tape (CT)
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Temperature Coefficient (Typ): ±300ppm/°C
Resistance - Wiper (Ohms) (Typ): 110
Supplier Device Package: 10-MSOP
Taper: Linear
Voltage - Supply: 2.7V ~ 5.5V, 8V ~ 16V
Number of Taps: 128
Operating Temperature: -40°C ~ 85°C
Configuration: Potentiometer
Interface: I²C
Memory Type: Non-Volatile
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Features: Selectable Address
Tolerance: ±20%
Resistance (Ohms): 10k
Packaging: Cut Tape (CT)
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| FDWS9508L-F085 |
|
Виробник: onsemi
Description: MOSFET P-CH 40V 80A 8PQFN
Description: MOSFET P-CH 40V 80A 8PQFN
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| NB3N502DR2G |
|
Виробник: onsemi
Description: IC PLL CLOCK MULTIPLIER 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: Yes/Yes
PLL: Yes with Bypass
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: PLL Clock Multiplier
Frequency - Max: 190MHz
Output: CMOS, TTL
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PLL CLOCK MULTIPLIER 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: Yes/Yes
PLL: Yes with Bypass
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: PLL Clock Multiplier
Frequency - Max: 190MHz
Output: CMOS, TTL
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| NTHL080N120SC1 |
|
Виробник: onsemi
Description: SICFET N-CH 1200V 44A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -15V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 44A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -15V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| NVHL080N120SC1 |
|
Виробник: onsemi
Description: SICFET N-CH 1200V 44A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -15V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 44A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -15V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 134411 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 961.84 грн |
| 10+ | 656.91 грн |
| 450+ | 623.42 грн |
| FSB50825B |
|
Виробник: onsemi
Description: MOSFET IPM 250V 3.6A 23-PWRDIP
Voltage: 250 V
Current: 3.6 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Through Hole
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Packaging: Tube
Description: MOSFET IPM 250V 3.6A 23-PWRDIP
Voltage: 250 V
Current: 3.6 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Through Hole
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Packaging: Tube
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| MC78L05ABPRPG |
|
Виробник: onsemi
Description: IC REG LINEAR 5V 100MA TO92
Voltage - Input (Max): 30V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 100mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Protection Features: Over Temperature, Short Circuit
PSRR: 49dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-92 (TO-226)
Number of Regulators: 1
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR 5V 100MA TO92
Voltage - Input (Max): 30V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 100mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Protection Features: Over Temperature, Short Circuit
PSRR: 49dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-92 (TO-226)
Number of Regulators: 1
Qualification: AEC-Q100
Grade: Automotive
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| 5285-MMBFJ201 |
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: JFET N-CH 40V SOT23-3
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Voltage - Breakdown (V(BR)GSS): 40 V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| FDN337N-F169 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: MOSFET N-CH 30V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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| FDN360P-NBGT003B |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| AR0542MBSC25SUD20 |
|
Виробник: onsemi
Description: IC IMAGE SENSOR 5 MP
Active Pixel Array: 2592H x 1944V
Pixel Size: 1.4µm x 1.4µm
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 3.1V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Package / Case: Die
Packaging: Tray
Frames per Second: 15
Part Status: Obsolete
Supplier Device Package: Die
Description: IC IMAGE SENSOR 5 MP
Active Pixel Array: 2592H x 1944V
Pixel Size: 1.4µm x 1.4µm
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 3.1V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Package / Case: Die
Packaging: Tray
Frames per Second: 15
Part Status: Obsolete
Supplier Device Package: Die
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| BYW29-200H |
Виробник: onsemi
Description: DIODE STANDARD 200V 8A TO2202
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 8A TO2202
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| MBR0520LT1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
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| MBR0530T1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
Description: DIODE SCHOTTKY 30V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
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| MBR0540T1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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| MBR1045H |
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 10A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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| MBR1060H |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 10A TO2202
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Description: DIODE SCHOTTKY 60V 10A TO2202
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
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| MBR120LSFT1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD123FL
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123FL
Description: DIODE SCHOTTKY 20V 1A SOD123FL
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123FL
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| MBR130LSFT1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123FL
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
Description: DIODE SCHOTTKY 30V 1A SOD123FL
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
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| MBR130T1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Bulk
Description: DIODE SCHOTTKY 30V 1A SOD123
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Bulk
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| MBR140SFT1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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| MBR16100CTH |
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 8A TO220
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: DIODE ARR SCHOTT 100V 8A TO220
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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| MBR1645H |
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 16A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Description: DIODE SCHOTTKY 45V 16A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
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| MBR20L45CTH |
Виробник: onsemi
Description: DIODE SCHOTTKY
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: DIODE SCHOTTKY
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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| MBR230LSFT1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A SOD123FL
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Description: DIODE SCHOTTKY 30V 2A SOD123FL
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
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| MBR40250TH |
Виробник: onsemi
Description: DIODE SCHOTTKY 250V 40A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A
Current - Reverse Leakage @ Vr: 250 µA @ 250 V
Description: DIODE SCHOTTKY 250V 40A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A
Current - Reverse Leakage @ Vr: 250 µA @ 250 V
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| MBR41H100CTH |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 20A TO-220
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: DIODE ARR SCHOTT 100V 20A TO-220
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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| MBRA210ET3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 10V 2A SMA
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Description: DIODE SCHOTTKY 10V 2A SMA
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
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| MBRA210LT3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 10V 2A SMA
Current - Reverse Leakage @ Vr: 700 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Description: DIODE SCHOTTKY 10V 2A SMA
Current - Reverse Leakage @ Vr: 700 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
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| MBRA340T3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A SMA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Description: DIODE SCHOTTKY 40V 3A SMA
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
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| MBRB2515LT4H |
Виробник: onsemi
Description: DIODE SCHOTTKY 15V 25A D2PAK
Description: DIODE SCHOTTKY 15V 25A D2PAK
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| MBRB41H100CT-1H |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOT 100V 20A TO262
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-262 (I2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARRAY SCHOT 100V 20A TO262
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-262 (I2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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| MBRD660CTT4H |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| MBRD835LT4H |
Виробник: onsemi
Description: DIODE SCHOTTKY 35V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
Description: DIODE SCHOTTKY 35V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
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| MBRM120ET1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Bulk
Mounting Type: Surface Mount
Package / Case: DO-216AA
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 595 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Bulk
Mounting Type: Surface Mount
Package / Case: DO-216AA
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 595 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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| MBRM120LT3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Current - Reverse Leakage @ Vr: 40 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Bulk
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Current - Reverse Leakage @ Vr: 40 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Bulk
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| MBRM140T3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Bulk
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MBRS1100T3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Description: DIODE SCHOTTKY 100V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
товару немає в наявності
В кошику
од. на суму грн.
| MBRS130LT3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.