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IMZ1AS_S1_00001 IMZ1AS_S1_00001 Panjit International Inc. IMZ1AS.pdf Description: TRANS NPN/PNP 60V 150MA SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: SOT-23-6
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IMZ1AS_S1_00001 IMZ1AS_S1_00001 Panjit International Inc. IMZ1AS.pdf Description: TRANS NPN/PNP 60V 150MA SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: SOT-23-6
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1.5KE8.2CA_R2_00001 1.5KE8.2CA_R2_00001 Panjit International Inc. 1.5KE_SERIES.pdf Description: TVS DIODE 7.02VWM 12.1V DO201AE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE8.2CA_R2_00001 1.5KE8.2CA_R2_00001 Panjit International Inc. 1.5KE_SERIES.pdf Description: TVS DIODE 7.02VWM 12.1V DO201AE
Packaging: Cut Tape (CT)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZT52-B39-AU_R1_000A1 BZT52-B39-AU_R1_000A1 Panjit International Inc. BZT52-B2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 29 V
Qualification: AEC-Q101
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BZT52-B39-AU_R1_000A1 BZT52-B39-AU_R1_000A1 Panjit International Inc. BZT52-B2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 29 V
Qualification: AEC-Q101
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PZ1AH14B_R1_00001 PZ1AH14B_R1_00001 Panjit International Inc. PZ1AH3V6B_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123H
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123HE
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 2 µA @ 11 V
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PZ1AH14B_R1_00001 PZ1AH14B_R1_00001 Panjit International Inc. PZ1AH3V6B_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123H
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123HE
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 2 µA @ 11 V
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PZ1AH14B-AU_R1_000A1 PZ1AH14B-AU_R1_000A1 Panjit International Inc. PZ1AH3V6B-AU_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123H
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123HE
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 2 µA @ 11 V
Qualification: AEC-Q101
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PZ1AH14B-AU_R1_000A1 PZ1AH14B-AU_R1_000A1 Panjit International Inc. PZ1AH3V6B-AU_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123H
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123HE
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 2 µA @ 11 V
Qualification: AEC-Q101
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PZS51A19CS_R1_00001 PZS51A19CS_R1_00001 Panjit International Inc. PZS51A3V9CS_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19 V
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14.4 V
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PZS51A19CS_R1_00001 PZS51A19CS_R1_00001 Panjit International Inc. PZS51A3V9CS_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19 V
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14.4 V
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BZX584C39-AU_R1_000A1 BZX584C39-AU_R1_000A1 Panjit International Inc. BZX584C2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
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BZX584C39-AU_R1_000A1 BZX584C39-AU_R1_000A1 Panjit International Inc. BZX584C2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
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ER1003CT_T0_00001 ER1003CT_T0_00001 Panjit International Inc. ER1000CT_SERIES.pdf Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
6+61.96 грн
10+37.47 грн
100+24.63 грн
500+17.92 грн
1000+16.84 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PJD45N06SA-AU_L2_006A1 PJD45N06SA-AU_L2_006A1 Panjit International Inc. PJD45N06SA-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
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PJD45N06SA-AU_L2_006A1 PJD45N06SA-AU_L2_006A1 Panjit International Inc. PJD45N06SA-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
4+90.87 грн
10+58.71 грн
100+40.88 грн
500+30.84 грн
1000+28.37 грн
Мінімальне замовлення: 4
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PMS408LL_R2_00601 PMS408LL_R2_00601 Panjit International Inc. PMS408LL.pdf Description: BRIDGE RECT 1PHASE 800V 4A M4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M4
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+30.43 грн
6000+27.26 грн
Мінімальне замовлення: 3000
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PMS408LL_R2_00601 PMS408LL_R2_00601 Panjit International Inc. PMS408LL.pdf Description: BRIDGE RECT 1PHASE 800V 4A M4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M4
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 8400 шт:
термін постачання 21-31 дні (днів)
3+114.83 грн
10+69.76 грн
100+46.56 грн
500+34.34 грн
1000+31.33 грн
Мінімальне замовлення: 3
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GBJA2510_T0_00301 GBJA2510_T0_00301 Panjit International Inc. GBJA2510.pdf Description: GLASS PASSIVATED LOW PROFILE BRI
Packaging: Tube
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
3+150.35 грн
15+84.16 грн
105+62.03 грн
510+49.37 грн
1005+42.84 грн
Мінімальне замовлення: 3
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UF806_T0_00001 UF806_T0_00001 Panjit International Inc. UF800_SERIES.pdf Description: ULTRA FAST RECOVERY RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
6+63.61 грн
10+41.13 грн
100+28.26 грн
500+21.05 грн
1000+19.25 грн
Мінімальне замовлення: 6
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PGR6016PT_T0_00301 PGR6016PT_T0_00301 Panjit International Inc. PGR6016PT.pdf Description: STANDARD REVERSE RECOVERY POWER
Packaging: Tube
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+236.26 грн
10+147.96 грн
100+102.47 грн
500+77.86 грн
1000+71.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PGR9016PT_T0_00301 PGR9016PT_T0_00301 Panjit International Inc. PGR9016PT.pdf Description: STANDARD REVERSE RECOVERY POWER
Packaging: Tube
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+270.96 грн
10+170.79 грн
100+119.21 грн
500+91.15 грн
1000+84.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PJQ5453E-AU_R2_002A1 PJQ5453E-AU_R2_002A1 Panjit International Inc. PJQ5453E-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V
Qualification: AEC-Q101
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PJQ5453E-AU_R2_002A1 PJQ5453E-AU_R2_002A1 Panjit International Inc. PJQ5453E-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2963 шт:
термін постачання 21-31 дні (днів)
4+88.39 грн
10+69.45 грн
100+52.77 грн
500+38.98 грн
1000+35.59 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PJQ5431E-AU_R2_006A1 PJQ5431E-AU_R2_006A1 Panjit International Inc. PJQ5431E-AU.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Qualification: AEC-Q101
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PJQ5431E-AU_R2_006A1 PJQ5431E-AU_R2_006A1 Panjit International Inc. PJQ5431E-AU.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2598 шт:
термін постачання 21-31 дні (днів)
3+133.83 грн
10+85.28 грн
100+58.29 грн
500+43.79 грн
1000+40.17 грн
Мінімальне замовлення: 3
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PJQ5445_R2_00001 PJQ5445_R2_00001 Panjit International Inc. PJQ5445.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
товару немає в наявності
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PJQ5463A-AU_R2_000A1 PJQ5463A-AU_R2_000A1 Panjit International Inc. PJQ5463A-AU.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
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PJQ5463A_R2_00001 PJQ5463A_R2_00001 Panjit International Inc. PJQ5463A.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
товару немає в наявності
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PJQ5463A_R2_00001 PJQ5463A_R2_00001 Panjit International Inc. PJQ5463A.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
товару немає в наявності
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PJQ5444_R2_00001 PJQ5444_R2_00001 Panjit International Inc. PJQ5444.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
товару немає в наявності
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PJQ5444_R2_00001 PJQ5444_R2_00001 Panjit International Inc. PJQ5444.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
товару немає в наявності
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PJQ5465A-AU_R2_000A1 PJQ5465A-AU_R2_000A1 Panjit International Inc. PJQ5465A-AU.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5465A-AU_R2_000A1 PJQ5465A-AU_R2_000A1 Panjit International Inc. PJQ5465A-AU.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Qualification: AEC-Q101
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1SMC5352_R1_00001 1SMC5352_R1_00001 Panjit International Inc. 1SMC5338_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
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1SMC5352_R1_00001 1SMC5352_R1_00001 Panjit International Inc. 1SMC5338_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
товару немає в наявності
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PMS308LL_R2_00601 PMS308LL_R2_00601 Panjit International Inc. PMS308LL.pdf Description: BRIDGE RECT 1PHASE 800V 3A M4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M4
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+26.98 грн
6000+24.11 грн
9000+23.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PMS308LL_R2_00601 PMS308LL_R2_00601 Panjit International Inc. PMS308LL.pdf Description: BRIDGE RECT 1PHASE 800V 3A M4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M4
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
4+103.26 грн
10+62.84 грн
100+41.68 грн
500+30.60 грн
1000+27.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PSMB033N10NS2_R2_00201 Panjit International Inc. PSMB033N10NS2.pdf Description: 100V/ 3.3M / TO-263AB FOR INDUST
Packaging: Tape & Reel (TR)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+129.86 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMB033N10NS2_R2_00201 Panjit International Inc. PSMB033N10NS2.pdf Description: 100V/ 3.3M / TO-263AB FOR INDUST
Packaging: Cut Tape (CT)
на замовлення 1168 шт:
термін постачання 21-31 дні (днів)
2+262.70 грн
10+212.95 грн
100+165.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SM8S18A-AU_R2_000A1 SM8S18A-AU_R2_000A1 Panjit International Inc. SM8S14A-AU_SERIES.pdf Description: 6.6KW SURFACE MOUNT TRANSIENT VO
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SM8S18A-AU_R2_000A1 SM8S18A-AU_R2_000A1 Panjit International Inc. SM8S14A-AU_SERIES.pdf Description: 6.6KW SURFACE MOUNT TRANSIENT VO
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BZT52-C68_R1_00001 BZT52-C68_R1_00001 Panjit International Inc. BZT52-C2V4_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.07 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52-C68_R1_00001 BZT52-C68_R1_00001 Panjit International Inc. BZT52-C2V4_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
на замовлення 8656 шт:
термін постачання 21-31 дні (днів)
31+10.74 грн
51+6.28 грн
100+3.84 грн
500+2.61 грн
1000+2.29 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
BZT52-C68-AU_R1_000A1 BZT52-C68-AU_R1_000A1 Panjit International Inc. BZT52-C2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-C68-AU_R1_000A1 BZT52-C68-AU_R1_000A1 Panjit International Inc. BZT52-C2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
товару немає в наявності
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BZT52-C68S_R1_00001 BZT52-C68S_R1_00001 Panjit International Inc. BZT52-C2V4S_SERIES.pdf Description: DIODE ZENER 68V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
товару немає в наявності
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BZT52-C68S_R1_00001 BZT52-C68S_R1_00001 Panjit International Inc. BZT52-C2V4S_SERIES.pdf Description: DIODE ZENER 68V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
товару немає в наявності
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PJD40P03E-AU_L2_006A1 PJD40P03E-AU_L2_006A1 Panjit International Inc. PJD40P03E-AU Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+120.61 грн
10+79.39 грн
100+55.74 грн
500+42.45 грн
1000+39.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PJD40P03E-AU_L2_006A1 PJD40P03E-AU_L2_006A1 Panjit International Inc. PJD40P03E-AU Description: 30V P-CHANNEL ENHANCEMENT MODE M
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 25 V
Qualification: AEC-Q101
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+39.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FR2J_R1_00001 FR2J_R1_00001 Panjit International Inc. FR2A_SERIES.pdf Description: SMB, FAST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+7.76 грн
1600+6.67 грн
2400+6.26 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
FR2J_R1_00001 FR2J_R1_00001 Panjit International Inc. FR2A_SERIES.pdf Description: SMB, FAST
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
12+29.74 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
FR2JF_R1_00001 FR2JF_R1_00001 Panjit International Inc. FR2AF_SERIES.pdf Description: SURFACE MOUNT FAST RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
FR2JF_R1_00001 FR2JF_R1_00001 Panjit International Inc. FR2AF_SERIES.pdf Description: SURFACE MOUNT FAST RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
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FR2JAFC_R1_00001 FR2JAFC_R1_00001 Panjit International Inc. FR2AAFC_SERIES.pdf Description: SURFACE MOUNT FAST RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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FR2JAFC_R1_00001 FR2JAFC_R1_00001 Panjit International Inc. FR2AAFC_SERIES.pdf Description: SURFACE MOUNT FAST RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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1.5KE82A_R2_00001 1.5KE82A_R2_00001 Panjit International Inc. 1.5KE_SERIES.pdf Description: TVS DIODE 70.1VWM 113VC DO201AE
Packaging: Cut Tape (CT)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
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BZX84C75-AU_R1_000A1 BZX84C75-AU_R1_000A1 Panjit International Inc. BZX84C2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
товару немає в наявності
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BZX84C75-AU_R1_000A1 BZX84C75-AU_R1_000A1 Panjit International Inc. BZX84C2V4-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
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IMZ1AS_S1_00001 IMZ1AS.pdf
IMZ1AS_S1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN/PNP 60V 150MA SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: SOT-23-6
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IMZ1AS_S1_00001 IMZ1AS.pdf
IMZ1AS_S1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN/PNP 60V 150MA SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz, 140MHz
Supplier Device Package: SOT-23-6
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1.5KE8.2CA_R2_00001 1.5KE_SERIES.pdf
1.5KE8.2CA_R2_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 7.02VWM 12.1V DO201AE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE8.2CA_R2_00001 1.5KE_SERIES.pdf
1.5KE8.2CA_R2_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 7.02VWM 12.1V DO201AE
Packaging: Cut Tape (CT)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZT52-B39-AU_R1_000A1 BZT52-B2V4-AU_SERIES.pdf
BZT52-B39-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 29 V
Qualification: AEC-Q101
товару немає в наявності
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BZT52-B39-AU_R1_000A1 BZT52-B2V4-AU_SERIES.pdf
BZT52-B39-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 29 V
Qualification: AEC-Q101
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PZ1AH14B_R1_00001 PZ1AH3V6B_SERIES.pdf
PZ1AH14B_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123H
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123HE
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 2 µA @ 11 V
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PZ1AH14B_R1_00001 PZ1AH3V6B_SERIES.pdf
PZ1AH14B_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123H
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123HE
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 2 µA @ 11 V
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PZ1AH14B-AU_R1_000A1 PZ1AH3V6B-AU_SERIES.pdf
PZ1AH14B-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123H
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123HE
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 2 µA @ 11 V
Qualification: AEC-Q101
товару немає в наявності
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PZ1AH14B-AU_R1_000A1 PZ1AH3V6B-AU_SERIES.pdf
PZ1AH14B-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123H
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123HE
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 2 µA @ 11 V
Qualification: AEC-Q101
товару немає в наявності
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PZS51A19CS_R1_00001 PZS51A3V9CS_SERIES.pdf
PZS51A19CS_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19 V
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14.4 V
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PZS51A19CS_R1_00001 PZS51A3V9CS_SERIES.pdf
PZS51A19CS_R1_00001
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19 V
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 14.4 V
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BZX584C39-AU_R1_000A1 BZX584C2V4-AU_SERIES.pdf
BZX584C39-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
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BZX584C39-AU_R1_000A1 BZX584C2V4-AU_SERIES.pdf
BZX584C39-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
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ER1003CT_T0_00001 ER1000CT_SERIES.pdf
ER1003CT_T0_00001
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.96 грн
10+37.47 грн
100+24.63 грн
500+17.92 грн
1000+16.84 грн
Мінімальне замовлення: 6
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PJD45N06SA-AU_L2_006A1 PJD45N06SA-AU.pdf
PJD45N06SA-AU_L2_006A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
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PJD45N06SA-AU_L2_006A1 PJD45N06SA-AU.pdf
PJD45N06SA-AU_L2_006A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.87 грн
10+58.71 грн
100+40.88 грн
500+30.84 грн
1000+28.37 грн
Мінімальне замовлення: 4
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PMS408LL_R2_00601 PMS408LL.pdf
PMS408LL_R2_00601
Виробник: Panjit International Inc.
Description: BRIDGE RECT 1PHASE 800V 4A M4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M4
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+30.43 грн
6000+27.26 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PMS408LL_R2_00601 PMS408LL.pdf
PMS408LL_R2_00601
Виробник: Panjit International Inc.
Description: BRIDGE RECT 1PHASE 800V 4A M4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M4
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 8400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.83 грн
10+69.76 грн
100+46.56 грн
500+34.34 грн
1000+31.33 грн
Мінімальне замовлення: 3
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GBJA2510_T0_00301 GBJA2510.pdf
GBJA2510_T0_00301
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED LOW PROFILE BRI
Packaging: Tube
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.35 грн
15+84.16 грн
105+62.03 грн
510+49.37 грн
1005+42.84 грн
Мінімальне замовлення: 3
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UF806_T0_00001 UF800_SERIES.pdf
UF806_T0_00001
Виробник: Panjit International Inc.
Description: ULTRA FAST RECOVERY RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+63.61 грн
10+41.13 грн
100+28.26 грн
500+21.05 грн
1000+19.25 грн
Мінімальне замовлення: 6
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PGR6016PT_T0_00301 PGR6016PT.pdf
PGR6016PT_T0_00301
Виробник: Panjit International Inc.
Description: STANDARD REVERSE RECOVERY POWER
Packaging: Tube
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+236.26 грн
10+147.96 грн
100+102.47 грн
500+77.86 грн
1000+71.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PGR9016PT_T0_00301 PGR9016PT.pdf
PGR9016PT_T0_00301
Виробник: Panjit International Inc.
Description: STANDARD REVERSE RECOVERY POWER
Packaging: Tube
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+270.96 грн
10+170.79 грн
100+119.21 грн
500+91.15 грн
1000+84.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PJQ5453E-AU_R2_002A1 PJQ5453E-AU.pdf
PJQ5453E-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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PJQ5453E-AU_R2_002A1 PJQ5453E-AU.pdf
PJQ5453E-AU_R2_002A1
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2963 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.39 грн
10+69.45 грн
100+52.77 грн
500+38.98 грн
1000+35.59 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PJQ5431E-AU_R2_006A1 PJQ5431E-AU.pdf
PJQ5431E-AU_R2_006A1
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Qualification: AEC-Q101
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PJQ5431E-AU_R2_006A1 PJQ5431E-AU.pdf
PJQ5431E-AU_R2_006A1
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2598 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.83 грн
10+85.28 грн
100+58.29 грн
500+43.79 грн
1000+40.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PJQ5445_R2_00001 PJQ5445.pdf
PJQ5445_R2_00001
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
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PJQ5463A-AU_R2_000A1 PJQ5463A-AU.pdf
PJQ5463A-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Qualification: AEC-Q101
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PJQ5463A_R2_00001 PJQ5463A.pdf
PJQ5463A_R2_00001
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
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PJQ5463A_R2_00001 PJQ5463A.pdf
PJQ5463A_R2_00001
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
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PJQ5444_R2_00001 PJQ5444.pdf
PJQ5444_R2_00001
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
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PJQ5444_R2_00001 PJQ5444.pdf
PJQ5444_R2_00001
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
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PJQ5465A-AU_R2_000A1 PJQ5465A-AU.pdf
PJQ5465A-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Qualification: AEC-Q101
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PJQ5465A-AU_R2_000A1 PJQ5465A-AU.pdf
PJQ5465A-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Qualification: AEC-Q101
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1SMC5352_R1_00001 1SMC5338_SERIES.pdf
1SMC5352_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
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1SMC5352_R1_00001 1SMC5338_SERIES.pdf
1SMC5352_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
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PMS308LL_R2_00601 PMS308LL.pdf
PMS308LL_R2_00601
Виробник: Panjit International Inc.
Description: BRIDGE RECT 1PHASE 800V 3A M4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M4
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+26.98 грн
6000+24.11 грн
9000+23.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PMS308LL_R2_00601 PMS308LL.pdf
PMS308LL_R2_00601
Виробник: Panjit International Inc.
Description: BRIDGE RECT 1PHASE 800V 3A M4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M4
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.26 грн
10+62.84 грн
100+41.68 грн
500+30.60 грн
1000+27.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PSMB033N10NS2_R2_00201 PSMB033N10NS2.pdf
Виробник: Panjit International Inc.
Description: 100V/ 3.3M / TO-263AB FOR INDUST
Packaging: Tape & Reel (TR)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+129.86 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PSMB033N10NS2_R2_00201 PSMB033N10NS2.pdf
Виробник: Panjit International Inc.
Description: 100V/ 3.3M / TO-263AB FOR INDUST
Packaging: Cut Tape (CT)
на замовлення 1168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+262.70 грн
10+212.95 грн
100+165.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SM8S18A-AU_R2_000A1 SM8S14A-AU_SERIES.pdf
SM8S18A-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 6.6KW SURFACE MOUNT TRANSIENT VO
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S18A-AU_R2_000A1 SM8S14A-AU_SERIES.pdf
SM8S18A-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 6.6KW SURFACE MOUNT TRANSIENT VO
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52-C68_R1_00001 BZT52-C2V4_SERIES.pdf
BZT52-C68_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.07 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52-C68_R1_00001 BZT52-C2V4_SERIES.pdf
BZT52-C68_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
на замовлення 8656 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+10.74 грн
51+6.28 грн
100+3.84 грн
500+2.61 грн
1000+2.29 грн
Мінімальне замовлення: 31
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BZT52-C68-AU_R1_000A1 BZT52-C2V4-AU_SERIES.pdf
BZT52-C68-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
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BZT52-C68-AU_R1_000A1 BZT52-C2V4-AU_SERIES.pdf
BZT52-C68-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
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BZT52-C68S_R1_00001 BZT52-C2V4S_SERIES.pdf
BZT52-C68S_R1_00001
Виробник: Panjit International Inc.
Description: DIODE ZENER 68V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
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BZT52-C68S_R1_00001 BZT52-C2V4S_SERIES.pdf
BZT52-C68S_R1_00001
Виробник: Panjit International Inc.
Description: DIODE ZENER 68V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
товару немає в наявності
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PJD40P03E-AU_L2_006A1 PJD40P03E-AU
PJD40P03E-AU_L2_006A1
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.61 грн
10+79.39 грн
100+55.74 грн
500+42.45 грн
1000+39.16 грн
Мінімальне замовлення: 3
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PJD40P03E-AU_L2_006A1 PJD40P03E-AU
PJD40P03E-AU_L2_006A1
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 25 V
Qualification: AEC-Q101
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+39.13 грн
Мінімальне замовлення: 3000
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FR2J_R1_00001 FR2A_SERIES.pdf
FR2J_R1_00001
Виробник: Panjit International Inc.
Description: SMB, FAST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+7.76 грн
1600+6.67 грн
2400+6.26 грн
Мінімальне замовлення: 800
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FR2J_R1_00001 FR2A_SERIES.pdf
FR2J_R1_00001
Виробник: Panjit International Inc.
Description: SMB, FAST
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.74 грн
Мінімальне замовлення: 12
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FR2JF_R1_00001 FR2AF_SERIES.pdf
FR2JF_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT FAST RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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FR2JF_R1_00001 FR2AF_SERIES.pdf
FR2JF_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT FAST RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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FR2JAFC_R1_00001 FR2AAFC_SERIES.pdf
FR2JAFC_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT FAST RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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FR2JAFC_R1_00001 FR2AAFC_SERIES.pdf
FR2JAFC_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT FAST RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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1.5KE82A_R2_00001 1.5KE_SERIES.pdf
1.5KE82A_R2_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 70.1VWM 113VC DO201AE
Packaging: Cut Tape (CT)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZX84C75-AU_R1_000A1 BZX84C2V4-AU_SERIES.pdf
BZX84C75-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
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BZX84C75-AU_R1_000A1 BZX84C2V4-AU_SERIES.pdf
BZX84C75-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Qualification: AEC-Q101
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