Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (11598) > Сторінка 180 з 194
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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UF2000CT_T0_00001 | Panjit International Inc. |
Description: ULTRA FAST RECOVERY RECTIFIERSPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220AB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UF200G_R2_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION ULTRAFPackaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UF200G_R2_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION ULTRAFPackaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PSMQC040N08NS2_R2_00201 | Panjit International Inc. |
Description: 80V/ 4.4M/ BEST-IN-GLASS FOM MOS Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| PSMQC040N08NS2_R2_00201 | Panjit International Inc. |
Description: 80V/ 4.4M/ BEST-IN-GLASS FOM MOS Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PJQ5542V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5542V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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| PJQ5540V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJQ5540V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2730 шт: термін постачання 21-31 дні (днів) |
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2EZ47_R2_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODEPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-15 Power - Max: 2 W Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2EZ47_R2_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODEPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-15 Power - Max: 2 W Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V |
на замовлення 3786 шт: термін постачання 21-31 дні (днів) |
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3EZ47_R2_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODEPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 38 Ohms Supplier Device Package: DO-15 Power - Max: 3 W Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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3EZ47_R2_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODEPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 38 Ohms Supplier Device Package: DO-15 Power - Max: 3 W Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ4435EP_R2_00201 | Panjit International Inc. |
Description: 30V P-CHANNEL STANDARD TRENCH MOPackaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PJQ4435EP_R2_00201 | Panjit International Inc. |
Description: 30V P-CHANNEL STANDARD TRENCH MOPackaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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P6SMB8.2A_R1_00001 | Panjit International Inc. |
Description: TVS DIODE 7.02VWM 12.1V DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 50A Voltage - Reverse Standoff (Typ): 7.02V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.79V Voltage - Clamping (Max) @ Ipp: 12.1V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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P6SMB8.2A_R1_00001 | Panjit International Inc. |
Description: TVS DIODE 7.02VWM 12.1V DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 50A Voltage - Reverse Standoff (Typ): 7.02V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.79V Voltage - Clamping (Max) @ Ipp: 12.1V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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SB220_R2_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 20V 2A DO15Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SB220_R2_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 20V 2A DO15Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5562A_R2_00201 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJQ5562A_R2_00201 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJQ5562A-AU_R2_002A1 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJQ5562A-AU_R2_002A1 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| PJMH074N60FRC | Panjit International Inc. |
Description: 600V/ 74M / 53A/ FAST RECOVERY Q Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 26.5A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3871 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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ES1001FL_R1_00001 | Panjit International Inc. |
Description: DIODE STANDARD 100V 1A SOD123FLPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ES1001FL_R1_00001 | Panjit International Inc. |
Description: DIODE STANDARD 100V 1A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 100 V |
на замовлення 2034 шт: термін постачання 21-31 дні (днів) |
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SB1030FCT_T0_00001 | Panjit International Inc. |
Description: ISOLATION SCHOTTKY BARRIER RECTIPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SB1030CT_T0_00001 | Panjit International Inc. |
Description: SCHOTTKY BARRIER RECTIFIERSPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SB1030_T0_00001 | Panjit International Inc. |
Description: SCHOTTKY BARRIER RECTIFIERSPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5534-AU_R2_002A1 | Panjit International Inc. |
Description: 30V N-CHANNEL (LL) SGT MOSFETPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5534-AU_R2_002A1 | Panjit International Inc. |
Description: 30V N-CHANNEL (LL) SGT MOSFETPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SBM1045VCT_T0_00001 | Panjit International Inc. |
Description: ULTRA LOW VF SCHOTTKY RECTIFIERPackaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A Current - Reverse Leakage @ Vr: 250 µA @ 45 V |
на замовлення 1956 шт: термін постачання 21-31 дні (днів) |
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SBM1060VCT_T0_00001 | Panjit International Inc. |
Description: ULTRA LOW VF SCHOTTKY RECTIFIERPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
на замовлення 1995 шт: термін постачання 21-31 дні (днів) |
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SBM1060VDC_R2_00001 | Panjit International Inc. |
Description: ULTRA LOW VF SCHOTTKY RECTIFIERPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SBM1060VDC_R2_00001 | Panjit International Inc. |
Description: ULTRA LOW VF SCHOTTKY RECTIFIERPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
на замовлення 740 шт: термін постачання 21-31 дні (днів) |
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SBM1060L_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 60V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 480pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SBM1560LSS_AY_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 60V 15A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 15A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SBM1660VCT_T0_00001 | Panjit International Inc. |
Description: ULTRA LOW VF SCHOTTKY RECTIFIER Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SBM1550USS_AY_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 50V 15A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 15A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A Current - Reverse Leakage @ Vr: 320 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SBM1660VDC_R2_00001 | Panjit International Inc. |
Description: ULTRA LOW VF SCHOTTKY RECTIFIER Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SBM1660VDC_R2_00001 | Panjit International Inc. |
Description: ULTRA LOW VF SCHOTTKY RECTIFIER Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJMD280N60E1_L2_00601 | Panjit International Inc. |
Description: 600V/ 280M / 13.8A/ EASY TO DRIVPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252AA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJMD280N60E1_L2_00601 | Panjit International Inc. |
Description: 600V/ 280M / 13.8A/ EASY TO DRIVPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252AA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PG5408_R2_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION PLASTIPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PG5408_R2_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION PLASTIPackaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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PJMH099N60EC_T0_00601 | Panjit International Inc. |
Description: 600V/ 99M / 39A/ EASY TO DRIVERPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Supplier Device Package: TO-247AD |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PJMP125N60FRC_T0_00601 | Panjit International Inc. |
Description: 600V/ 125M / 30A/ SJ MOSFET WITHPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Supplier Device Package: TO-220AB-L |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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PJMF125N60FRC_T0_00601 | Panjit International Inc. |
Description: 600V/ 125M / 30A/ SJ MOSFET WITHPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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SM8S14A-AU_R2_000A1 | Panjit International Inc. |
Description: 6.6KW SURFACE MOUNT TRANSIENT VOPackaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 284A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM8S14A-AU_R2_000A1 | Panjit International Inc. |
Description: 6.6KW SURFACE MOUNT TRANSIENT VOPackaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 284A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ4437EP-AU_R2_002A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ4437EP-AU_R2_002A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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PJD45P03E-AU_L2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJD45P03E-AU_L2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BR320_R1_00001 | Panjit International Inc. |
Description: SMB, SKYPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BR320_R1_00001 | Panjit International Inc. |
Description: SMB, SKYPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
на замовлення 4520 шт: термін постачання 21-31 дні (днів) |
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BD1060CS_L2_00001 | Panjit International Inc. |
Description: DIODE ARR SCHOTT 60V 10A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BD1060CS_L2_00001 | Panjit International Inc. |
Description: DIODE ARR SCHOTT 60V 10A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BD1045CS_L2_00001 | Panjit International Inc. |
Description: DIODE ARR SCHOTT 45V 10A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BD1045CS_L2_00001 | Panjit International Inc. |
Description: DIODE ARR SCHOTT 45V 10A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. |
| UF2000CT_T0_00001 |
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Виробник: Panjit International Inc.
Description: ULTRA FAST RECOVERY RECTIFIERS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: ULTRA FAST RECOVERY RECTIFIERS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| UF200G_R2_00001 |
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Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION ULTRAF
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: GLASS PASSIVATED JUNCTION ULTRAF
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| UF200G_R2_00001 |
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Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION ULTRAF
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: GLASS PASSIVATED JUNCTION ULTRAF
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC040N08NS2_R2_00201 |
Виробник: Panjit International Inc.
Description: 80V/ 4.4M/ BEST-IN-GLASS FOM MOS
Packaging: Tape & Reel (TR)
Description: 80V/ 4.4M/ BEST-IN-GLASS FOM MOS
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 62.67 грн |
| 6000+ | 60.29 грн |
| PSMQC040N08NS2_R2_00201 |
Виробник: Panjit International Inc.
Description: 80V/ 4.4M/ BEST-IN-GLASS FOM MOS
Packaging: Cut Tape (CT)
Description: 80V/ 4.4M/ BEST-IN-GLASS FOM MOS
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 213.13 грн |
| 10+ | 132.61 грн |
| 100+ | 91.05 грн |
| 500+ | 68.79 грн |
| 1000+ | 63.43 грн |
| PJQ5542V-AU_R2_002A1 |
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Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5542V-AU_R2_002A1 |
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Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.96 грн |
| 10+ | 102.94 грн |
| 100+ | 72.87 грн |
| 500+ | 58.16 грн |
| 1000+ | 53.56 грн |
| PJQ5540V-AU_R2_002A1 |
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Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| PJQ5540V-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 196.61 грн |
| 10+ | 131.50 грн |
| 100+ | 95.15 грн |
| 500+ | 75.85 грн |
| 1000+ | 70.12 грн |
| 2EZ47_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-15
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-15
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
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В кошику
од. на суму грн.
| 2EZ47_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-15
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-15
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
на замовлення 3786 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.65 грн |
| 11+ | 29.67 грн |
| 100+ | 17.82 грн |
| 500+ | 15.48 грн |
| 1000+ | 10.53 грн |
| 2000+ | 9.69 грн |
| 3EZ47_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-15
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-15
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
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В кошику
од. на суму грн.
| 3EZ47_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-15
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-15
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4435EP_R2_00201 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL STANDARD TRENCH MO
Packaging: Tape & Reel (TR)
Description: 30V P-CHANNEL STANDARD TRENCH MO
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 19.32 грн |
| PJQ4435EP_R2_00201 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL STANDARD TRENCH MO
Packaging: Cut Tape (CT)
Description: 30V P-CHANNEL STANDARD TRENCH MO
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.44 грн |
| 10+ | 49.88 грн |
| 100+ | 32.62 грн |
| 500+ | 23.64 грн |
| 1000+ | 21.40 грн |
| 2000+ | 19.51 грн |
| P6SMB8.2A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 9.52 грн |
| P6SMB8.2A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.96 грн |
| SB220_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 20V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Description: DIODE SCHOTTKY 20V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
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од. на суму грн.
| SB220_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 20V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Description: DIODE SCHOTTKY 20V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5562A_R2_00201 |
![]() |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 33.71 грн |
| PJQ5562A_R2_00201 |
![]() |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.39 грн |
| 10+ | 69.84 грн |
| 100+ | 48.94 грн |
| 500+ | 37.15 грн |
| 1000+ | 34.28 грн |
| PJQ5562A-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 45.85 грн |
| PJQ5562A-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.30 грн |
| 10+ | 88.78 грн |
| 100+ | 62.83 грн |
| 500+ | 48.12 грн |
| 1000+ | 44.58 грн |
| PJMH074N60FRC |
Виробник: Panjit International Inc.
Description: 600V/ 74M / 53A/ FAST RECOVERY Q
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 26.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3871 pF @ 400 V
Description: 600V/ 74M / 53A/ FAST RECOVERY Q
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 26.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3871 pF @ 400 V
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| ES1001FL_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE STANDARD 100V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Description: DIODE STANDARD 100V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
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од. на суму грн.
| ES1001FL_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE STANDARD 100V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Description: DIODE STANDARD 100V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
на замовлення 2034 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.43 грн |
| 21+ | 15.35 грн |
| 100+ | 9.59 грн |
| 500+ | 6.68 грн |
| 1000+ | 5.93 грн |
| SB1030FCT_T0_00001 |
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Виробник: Panjit International Inc.
Description: ISOLATION SCHOTTKY BARRIER RECTI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: ISOLATION SCHOTTKY BARRIER RECTI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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| SB1030CT_T0_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SCHOTTKY BARRIER RECTIFIERS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: SCHOTTKY BARRIER RECTIFIERS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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| SB1030_T0_00001 |
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Виробник: Panjit International Inc.
Description: SCHOTTKY BARRIER RECTIFIERS
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: SCHOTTKY BARRIER RECTIFIERS
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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| PJQ5534-AU_R2_002A1 |
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Виробник: Panjit International Inc.
Description: 30V N-CHANNEL (LL) SGT MOSFET
Packaging: Tape & Reel (TR)
Description: 30V N-CHANNEL (LL) SGT MOSFET
Packaging: Tape & Reel (TR)
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| PJQ5534-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL (LL) SGT MOSFET
Packaging: Cut Tape (CT)
Description: 30V N-CHANNEL (LL) SGT MOSFET
Packaging: Cut Tape (CT)
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| SBM1045VCT_T0_00001 |
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Виробник: Panjit International Inc.
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
на замовлення 1956 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.43 грн |
| 10+ | 36.12 грн |
| 100+ | 28.09 грн |
| 500+ | 22.34 грн |
| 1000+ | 22.10 грн |
| SBM1060VCT_T0_00001 |
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Виробник: Panjit International Inc.
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 1995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.26 грн |
| 50+ | 50.42 грн |
| 100+ | 39.95 грн |
| 500+ | 31.78 грн |
| 1000+ | 25.89 грн |
| SBM1060VDC_R2_00001 |
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Виробник: Panjit International Inc.
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
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| SBM1060VDC_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 740 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.26 грн |
| 10+ | 74.46 грн |
| 100+ | 49.72 грн |
| SBM1060L_T0_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SCHOTTKY 60V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
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| SBM1560LSS_AY_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 15A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SCHOTTKY 60V 15A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
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од. на суму грн.
| SBM1660VCT_T0_00001 |
Виробник: Panjit International Inc.
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
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| SBM1550USS_AY_00001 |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 50V 15A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 320 µA @ 50 V
Description: DIODE SCHOTTKY 50V 15A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 320 µA @ 50 V
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| SBM1660VDC_R2_00001 |
Виробник: Panjit International Inc.
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
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| SBM1660VDC_R2_00001 |
Виробник: Panjit International Inc.
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: ULTRA LOW VF SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
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| PJMD280N60E1_L2_00601 |
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Виробник: Panjit International Inc.
Description: 600V/ 280M / 13.8A/ EASY TO DRIV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Description: 600V/ 280M / 13.8A/ EASY TO DRIV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 37.66 грн |
| PJMD280N60E1_L2_00601 |
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Виробник: Panjit International Inc.
Description: 600V/ 280M / 13.8A/ EASY TO DRIV
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Description: 600V/ 280M / 13.8A/ EASY TO DRIV
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.65 грн |
| 10+ | 75.89 грн |
| 100+ | 56.77 грн |
| 500+ | 43.50 грн |
| 1000+ | 39.19 грн |
| PG5408_R2_00001 |
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Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION PLASTI
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: GLASS PASSIVATED JUNCTION PLASTI
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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| PG5408_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION PLASTI
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: GLASS PASSIVATED JUNCTION PLASTI
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.26 грн |
| 12+ | 27.76 грн |
| 100+ | 17.72 грн |
| PJMH099N60EC_T0_00601 |
![]() |
Виробник: Panjit International Inc.
Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 455.18 грн |
| 30+ | 319.47 грн |
| 120+ | 285.38 грн |
| 510+ | 233.37 грн |
| 1020+ | 200.45 грн |
| PJMP125N60FRC_T0_00601 |
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Виробник: Panjit International Inc.
Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Supplier Device Package: TO-220AB-L
Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Supplier Device Package: TO-220AB-L
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 438.65 грн |
| 50+ | 221.59 грн |
| 100+ | 202.19 грн |
| 500+ | 157.86 грн |
| 1000+ | 150.61 грн |
| PJMF125N60FRC_T0_00601 |
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Виробник: Panjit International Inc.
Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB-F
Description: 600V/ 125M / 30A/ SJ MOSFET WITH
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB-F
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 442.78 грн |
| 50+ | 223.60 грн |
| 100+ | 204.05 грн |
| 500+ | 159.38 грн |
| 1000+ | 152.29 грн |
| SM8S14A-AU_R2_000A1 |
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Виробник: Panjit International Inc.
Description: 6.6KW SURFACE MOUNT TRANSIENT VO
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 6.6KW SURFACE MOUNT TRANSIENT VO
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| SM8S14A-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 6.6KW SURFACE MOUNT TRANSIENT VO
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 6.6KW SURFACE MOUNT TRANSIENT VO
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| PJQ4437EP-AU_R2_002A1 |
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Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
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| PJQ4437EP-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.74 грн |
| 10+ | 43.51 грн |
| 100+ | 29.98 грн |
| 500+ | 22.38 грн |
| 1000+ | 20.48 грн |
| 2000+ | 18.87 грн |
| PJD45P03E-AU_L2_006A1 |
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Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 64.39 грн |
| PJD45P03E-AU_L2_006A1 |
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Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.09 грн |
| 10+ | 135.55 грн |
| 100+ | 93.17 грн |
| 500+ | 70.44 грн |
| 1000+ | 64.98 грн |
| BR320_R1_00001 |
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Виробник: Panjit International Inc.
Description: SMB, SKY
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: SMB, SKY
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 11.84 грн |
| 1600+ | 10.25 грн |
| 2400+ | 9.66 грн |
| 4000+ | 8.44 грн |
| BR320_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SMB, SKY
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: SMB, SKY
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 4520 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.96 грн |
| 13+ | 25.61 грн |
| 100+ | 16.33 грн |
| BD1060CS_L2_00001 |
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Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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| BD1060CS_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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| BD1045CS_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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| BD1045CS_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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од. на суму грн.




















