Технічний опис 1090MP MICROSEMI
Description: RF TRANS NPN 65V 1.15GHZ 55FW-1, Mounting Type: Chassis Mount, Package / Case: 55FW-1, Packaging: Bulk, Supplier Device Package: 55FW-1, Frequency - Transition: 1.025GHz ~ 1.15GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V, Voltage - Collector Emitter Breakdown (Max): 65V, Current - Collector (Ic) (Max): 6.5A, Power - Max: 250W, Gain: 8.08dB ~ 8.5dB, Operating Temperature: 200°C (TJ), Transistor Type: NPN.
Інші пропозиції 1090MP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 1090MP | Microsemi Corporation |
Description: RF TRANS NPN 65V 1.15GHZ 55FW-1Mounting Type: Chassis Mount Package / Case: 55FW-1 Packaging: Bulk Supplier Device Package: 55FW-1 Frequency - Transition: 1.025GHz ~ 1.15GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 6.5A Power - Max: 250W Gain: 8.08dB ~ 8.5dB Operating Temperature: 200°C (TJ) Transistor Type: NPN |
товару немає в наявності |
В кошику од. на суму грн. | |
|
|
1090MP | Microsemi |
RF Bipolar Transistors Avionics/Bipolar Transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| 1090MP |
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Виробник: Microsemi Corporation
Description: RF TRANS NPN 65V 1.15GHZ 55FW-1
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Packaging: Bulk
Supplier Device Package: 55FW-1
Frequency - Transition: 1.025GHz ~ 1.15GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 6.5A
Power - Max: 250W
Gain: 8.08dB ~ 8.5dB
Operating Temperature: 200°C (TJ)
Transistor Type: NPN
Description: RF TRANS NPN 65V 1.15GHZ 55FW-1
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Packaging: Bulk
Supplier Device Package: 55FW-1
Frequency - Transition: 1.025GHz ~ 1.15GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 6.5A
Power - Max: 250W
Gain: 8.08dB ~ 8.5dB
Operating Temperature: 200°C (TJ)
Transistor Type: NPN
товару немає в наявності
В кошику
од. на суму грн.


