Технічний опис 1N5419/TR Microchip Technology
Description: DIODE GEN PURP 500V 3A GPR-4AM, Packaging: Tape & Reel (TR), Package / Case: R-4, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 110pF @ 12V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: GPR-4AM, Operating Temperature - Junction: -65°C ~ 200°C, Voltage - DC Reverse (Vr) (Max): 500 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 1 µA @ 500 V.
Інші пропозиції 1N5419/TR
| Фото | Назва | Виробник | Інформація |
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1N5419/TR | Виробник : Microchip Technology |
 Description: DIODE GEN PURP 500V 3A B SQ-MELFPackaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 500 V |
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1N5419 TR | Виробник : Central Semiconductor Corp |
Description: DIODE GEN PURP 500V 3A GPR-4AM Packaging: Tape & Reel (TR) Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 110pF @ 12V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 500 V |
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1N5419/TR | Виробник : Microchip Technology |
Rectifiers 500 V UFR,FRR |
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