1SS190TE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC59-3
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59-3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.09 грн |
| 6000+ | 3.65 грн |
| 9000+ | 3.03 грн |
| 30000+ | 2.79 грн |
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Технічний опис 1SS190TE85LF Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC59-3, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Active, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: SC-59-3, Current - Average Rectified (Io): 100mA, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA.
Інші пропозиції 1SS190TE85LF за ціною від 4.27 грн до 23.97 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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1SS190TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 41585 шт: термін постачання 21-31 дні (днів) |
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1SS190TE85LF | Toshiba |
Small Signal Switching Diodes 0.1A 80V Switching Diode S-Mini High |
на замовлення 5182 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 1SS190TE85LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 41585 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.97 грн |
| 19+ | 16.08 грн |
| 100+ | 7.84 грн |
| 500+ | 6.14 грн |
| 1000+ | 4.27 грн |
| 1SS190TE85LF |
|
Виробник: Toshiba
Small Signal Switching Diodes 0.1A 80V Switching Diode S-Mini High
Small Signal Switching Diodes 0.1A 80V Switching Diode S-Mini High
на замовлення 5182 шт:
термін постачання 21-30 дні (днів)