1SS367,H3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.81 грн |
| 6000+ | 2.42 грн |
| 9000+ | 2.27 грн |
| 15000+ | 1.97 грн |
| 21000+ | 1.88 грн |
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Технічний опис 1SS367,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 40pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: USC, Operating Temperature - Junction: 125°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 10 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA, Current - Reverse Leakage @ Vr: 20 µA @ 10 V.
Інші пропозиції 1SS367,H3F за ціною від 3.08 грн до 13.86 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1SS367,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 26224 шт: термін постачання 21-31 дні (днів) |
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1SS367,H3F | Toshiba |
Schottky Diodes & Rectifiers Sml-Signal Schottky Barrier Diode |
на замовлення 27638 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 1SS367,H3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 26224 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.86 грн |
| 36+ | 8.30 грн |
| 100+ | 5.13 грн |
| 500+ | 3.50 грн |
| 1000+ | 3.08 грн |
| 1SS367,H3F |
|
Виробник: Toshiba
Schottky Diodes & Rectifiers Sml-Signal Schottky Barrier Diode
Schottky Diodes & Rectifiers Sml-Signal Schottky Barrier Diode
на замовлення 27638 шт:
термін постачання 21-30 дні (днів)