1SS389,H3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ESC
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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Технічний опис 1SS389,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC, Current - Reverse Leakage @ Vr: 5 µA @ 10 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA, Voltage - DC Reverse (Vr) (Max): 40 V, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: ESC, Current - Average Rectified (Io): 100mA, Capacitance @ Vr, F: 25pF @ 0V, 1MHz, Technology: Schottky, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SC-79, SOD-523, Packaging: Tape & Reel (TR).
Інші пропозиції 1SS389,H3F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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1SS389,H3F | Виробник : Toshiba | Schottky Diodes & Rectifiers Small-Signal Schotky 0.1A 10V |
товару немає в наявності |