
1SS389,H3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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Технічний опис 1SS389,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 100MA ESC, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 25pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: ESC, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA, Current - Reverse Leakage @ Vr: 5 µA @ 10 V.
Інші пропозиції 1SS389,H3F
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1SS389,H3F | Виробник : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 100MA ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 25pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 50 mA Current - Reverse Leakage @ Vr: 5 µA @ 10 V |
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1SS389,H3F | Виробник : Toshiba | Schottky Diodes & Rectifiers Small-Signal Schotky 0.1A 10V |
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