Технічний опис 2N6849 MICROSEMI
Description: MOSFET P-CH 100V 6.5A TO39, Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-39, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 800mW (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AF Metal Can, Packaging: Bulk.
Інші пропозиції 2N6849
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2N6849 | Microsemi Corporation |
 Description: MOSFET P-CH 100V 6.5A TO39Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AF Metal Can Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
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2N6849 | Infineon / IR |
MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. |
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2N6849 | Microchip Technology |
MOSFETs P Channel MOSFET |
товару немає в наявності |
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 |
2N6849 | Semelab / TT Electronics |
MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. |
| 2N6849 |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO39
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
Description: MOSFET P-CH 100V 6.5A TO39
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N6849 |
|
Виробник: Microchip Technology
MOSFETs P Channel MOSFET
MOSFETs P Channel MOSFET
товару немає в наявності
В кошику
од. на суму грн.