2SA1020-Y(HIT,F,M) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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Технічний опис 2SA1020-Y(HIT,F,M) Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD, Power - Max: 900 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 2 A, Part Status: Obsolete, Supplier Device Package: TO-92MOD, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Packaging: Bulk.
Інші пропозиції 2SA1020-Y(HIT,F,M)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2SA1020-Y(HIT,F,M) | Виробник : Toshiba |
Toshiba |
товару немає в наявності |