Технічний опис 2SA1242-Y(Q) Toshiba
Description: TRANS PNP 20V 5A PW-MOLD, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: PW-MOLD, Frequency - Transition: 170MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції 2SA1242-Y(Q)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2SA1242-Y(Q) | Toshiba Semiconductor and Storage |
 Description: TRANS PNP 20V 5A PW-MOLDPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: PW-MOLD Frequency - Transition: 170MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2SA1242-Y (Q) | Toshiba | Bipolar Transistors - BJT |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SA1242-Y(Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 5A PW-MOLD
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PW-MOLD
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: TRANS PNP 20V 5A PW-MOLD
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PW-MOLD
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1242-Y (Q) |
Виробник: Toshiba
Bipolar Transistors - BJT
Bipolar Transistors - BJT
товару немає в наявності
В кошику
од. на суму грн.