2SA1312GRTE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис 2SA1312GRTE85LF Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: S-Mini, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Operating Temperature: 125°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції 2SA1312GRTE85LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2SA1312GRTE85LF | Виробник : Toshiba |
Bipolar Transistors - BJT PNP Audio Amp VCEO -120V HFE 700 |
товару немає в наявності |