2SA1832-Y,LXHF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Power - Max: 120 mW
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
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Технічний опис 2SA1832-Y,LXHF Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM, Power - Max: 120 mW, Part Status: Active, Supplier Device Package: SSM, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA.
Інші пропозиції 2SA1832-Y,LXHF за ціною від 5.32 грн до 23.20 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SA1832-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SSMPower - Max: 120 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SSM Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3681 шт: термін постачання 21-31 дні (днів) |
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2SA1832-Y,LXHF | Toshiba |
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-416 (SSM) |
на замовлення 5880 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 2SA1832-Y,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PNP 50V 0.15A SSM
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3681 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.20 грн |
| 22+ | 13.77 грн |
| 100+ | 8.63 грн |
| 500+ | 6.00 грн |
| 1000+ | 5.32 грн |
| 2SA1832-Y,LXHF |
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Виробник: Toshiba
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-416 (SSM)
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-416 (SSM)
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)



