Технічний опис 2SA1887F TOSHIBA
Description: TRANS PNP 50V 10A TO220NIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V, Frequency - Transition: 45MHz, Supplier Device Package: TO-220NIS, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 2 W.
Інші пропозиції 2SA1887F
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
2SA1887(F) | Toshiba Semiconductor and Storage |
 Description: TRANS PNP 50V 10A TO220NISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Frequency - Transition: 45MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2SA1887 (F) | Toshiba | Bipolar Transistors - BJT |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SA1887(F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 10A TO220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 10A TO220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 45MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1887 (F) |
Виробник: Toshiba
Bipolar Transistors - BJT
Bipolar Transistors - BJT
товару немає в наявності
В кошику
од. на суму грн.