2SA1954BTE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Description: TRANS PNP 12V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
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Технічний опис 2SA1954BTE85LF Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: SC-70, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 100 mW.
Інші пропозиції 2SA1954BTE85LF
| Фото | Назва | Виробник | Інформація |
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Ціна |
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2SA1954BTE85LF | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.5A SC-70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 100 mW |
товару немає в наявності |
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2SA1954BTE85LF | Виробник : Toshiba | Bipolar Transistors - BJT PNP Trans -0.5A LN -12V VCEO |
товару немає в наявності |