Інші пропозиції 2SC3324GRTE85LF
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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2SC3324GRTE85LF | Виробник : Toshiba Semiconductor and Storage |
 Description: TRANS NPN 120V 0.1A TO236Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-236 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
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2SC3324GRTE85LF | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-236 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
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2SC3324GRTE85LF | Виробник : Toshiba |
Bipolar Transistors - BJT Audio Freq Low Audio Freq Low |
товар відсутній |