2SC4213BTE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.66 грн |
| 6000+ | 4.92 грн |
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Технічний опис 2SC4213BTE85LF Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 300 mA, Part Status: Active, Supplier Device Package: SC-70, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A, Operating Temperature: 125°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Інші пропозиції 2SC4213BTE85LF за ціною від 6.09 грн до 26.17 грн
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2SC4213BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 20V 0.3A SC-70 Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 300 mA Part Status: Active Supplier Device Package: SC-70 Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 7633 шт: термін постачання 21-31 дні (днів) |
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2SC4213BTE85LF | Toshiba |
Bipolar Transistors - BJT NPN 0.3A IC 20V Gen Purp Trans |
на замовлення 22789 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 2SC4213BTE85LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 7633 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.17 грн |
| 19+ | 15.71 грн |
| 100+ | 9.84 грн |
| 500+ | 6.86 грн |
| 1000+ | 6.09 грн |
| 2SC4213BTE85LF |
|
Виробник: Toshiba
Bipolar Transistors - BJT NPN 0.3A IC 20V Gen Purp Trans
Bipolar Transistors - BJT NPN 0.3A IC 20V Gen Purp Trans
на замовлення 22789 шт:
термін постачання 21-30 дні (днів)