Технічний опис 2SC5087YTE85LF Toshiba
Description: RF TRANS NPN 12V 7GHZ SMQ, Packaging: Tape & Reel (TR), Package / Case: SC-61AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Gain: 13dB, Power - Max: 150mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Supplier Device Package: SMQ, Part Status: Obsolete.
Інші пропозиції 2SC5087YTE85LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2SC5087YTE85LF | Виробник : Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMQ Packaging: Cut Tape (CT) Package / Case: SC-61AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 13dB Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SMQ Part Status: Obsolete |
товару немає в наявності |
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2SC5087YTE85LF | Виробник : Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMQ Packaging: Tape & Reel (TR) Package / Case: SC-61AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 13dB Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SMQ Part Status: Obsolete |
товару немає в наявності |