2SC5088-O(TE85L,F) Toshiba Semiconductor and Storage


Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 18dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: USQ
Part Status: Obsolete
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Технічний опис 2SC5088-O(TE85L,F) Toshiba Semiconductor and Storage

Description: RF TRANS NPN 12V 7GHZ USQ, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Gain: 18dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1dB @ 500MHz, Supplier Device Package: USQ, Part Status: Obsolete.

Інші пропозиції 2SC5088-O(TE85L,F)

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2SC5088-O(TE85L,F) Виробник : Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 18dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: USQ
Part Status: Obsolete
товар відсутній
2SC5088-O(TE85L,F) Виробник : Toshiba Toshiba
товар відсутній