Технічний опис 2SC5359-O(Q) Toshiba
Description: TRANS NPN 230V 15A TO-3P, Packaging: Bulk, Package / Case: TO-3PL, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-3P(L), Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 230 V, Power - Max: 180 W.
Інші пропозиції 2SC5359-O(Q)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2SC5359-O(Q) | Виробник : Toshiba |
 Trans GP BJT NPN 230V 15A 180000mW 3-Pin(3+Tab) TO-3PL Tray |
товару немає в наявності |
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2SC5359-O(Q) | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS NPN 230V 15A TO-3P Packaging: Bulk Package / Case: TO-3PL Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P(L) Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 180 W |
товару немає в наявності |
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2SC5359-O(Q) | Виробник : Toshiba |
Bipolar Transistors - BJT Transistor NPN 230V 15A |
товару немає в наявності |