2SC6000(TE16L1,NQ) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: 2SC6000(TE16L1,NQ)
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Supplier Device Package: PW-MOLD
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис 2SC6000(TE16L1,NQ) Toshiba Semiconductor and Storage
Description: 2SC6000(TE16L1,NQ), Power - Max: 20 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 7 A, Part Status: Active, Supplier Device Package: PW-MOLD, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції 2SC6000(TE16L1,NQ)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2SC6000(TE16L1,NQ) | Виробник : Toshiba |
 Bipolar Transistors - BJT Pb-F POWER TRANSISTOR NEW PW-MOLD MOQ=2000 PD=20W F=150MHZ |
товару немає в наявності |