2SJ305TE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.99 грн |
| 6000+ | 10.59 грн |
| 9000+ | 10.11 грн |
Відгуки про товар
Написати відгук
Технічний опис 2SJ305TE85LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V, Power Dissipation (Max): 200mW (Ta), Supplier Device Package: SC-59, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V.
Інші пропозиції 2SJ305TE85LF за ціною від 13.00 грн до 52.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2SJ305TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 200MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V |
на замовлення 11230 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
2SJ305TE85LF | Toshiba |
MOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW |
на замовлення 5131 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 2SJ305TE85LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
на замовлення 11230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.34 грн |
| 10+ | 31.13 грн |
| 100+ | 20.15 грн |
| 500+ | 14.44 грн |
| 1000+ | 13.00 грн |
| 2SJ305TE85LF |
|
Виробник: Toshiba
MOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
MOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
на замовлення 5131 шт:
термін постачання 21-30 дні (днів)